CN105098052A - Manufacturing method of semiconductor component - Google Patents
Manufacturing method of semiconductor component Download PDFInfo
- Publication number
- CN105098052A CN105098052A CN201510480360.0A CN201510480360A CN105098052A CN 105098052 A CN105098052 A CN 105098052A CN 201510480360 A CN201510480360 A CN 201510480360A CN 105098052 A CN105098052 A CN 105098052A
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- CN
- China
- Prior art keywords
- semiconductor
- nickel
- type semiconductor
- manufacture method
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000013078 crystal Substances 0.000 claims abstract description 32
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 25
- 238000003466 welding Methods 0.000 claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 15
- 238000005057 refrigeration Methods 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052802 copper Inorganic materials 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 22
- 238000002844 melting Methods 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 20
- 239000011265 semifinished product Substances 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 8
- 239000011195 cermet Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 abstract description 4
- 239000003822 epoxy resin Substances 0.000 abstract description 3
- 229920000647 polyepoxide Polymers 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 abstract 3
- 230000004927 fusion Effects 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000003292 glue Substances 0.000 abstract 1
- 239000012945 sealing adhesive Substances 0.000 abstract 1
- 239000000047 product Substances 0.000 description 6
- 239000000565 sealant Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000005679 Peltier effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a manufacturing method of a semiconductor component. The manufacturing method comprises the following steps that N-type and P-type semiconductor crystal rods are cut into pieces and cleaned and arranged on a conveyor belt, and nickel wires are evenly sprayed on the surface of the crystal pieces after heating of the nickel wires; a layer of nickel, a layer of tin and a layer of copper are coated on the crystal pieces, and the crystal pieces are cut into grains; the N-type semiconductor crystal grains and the P-type semiconductor crystal grains are arranged on a metal ceramic wafer in a spacing way and fixed by a mould to perform fusion welding so that a semiconductor refrigeration piece is manufactured; and glue is blade-coated on insulating ceramic wafers, and the semiconductor refrigeration element is fixed between the two insulating ceramic wafers so that a semi-finished semiconductor refrigeration device is manufactured. The N-type semiconductor crystal grains and the P-type semiconductor crystal grains are arranged on the metal conductor in the spacing way and fixed by the mould and then fusion welding is performed so that yield rate of the product can be enhanced; and a sealing adhesive tape is arranged at the external side of the semiconductor refrigeration element so that influence on performance of the semiconductor refrigeration device caused by the fact that epoxy resin flows into the middle part of the semiconductor refrigeration device can be prevented.
Description
Technical field
The present invention relates to a kind of novel manufacture method, particularly relate to a kind of manufacture method of semiconductor refrigerating assembly, belong to technical field of manufacturing semiconductors.
Background technology
The operation principle of semiconductor cooler is based on Peltier principle, first this effect was found by J.A.C Peltier in 1834, namely circuit when two kinds of different conductor A and B compositions is utilized and when being connected with direct current, except Joule heat, certain other heat also can be discharged in joint, another joint then absorbs heat, and this phenomenon caused by peltier effect is reversible, when changing the sense of current, the joint of heat release and heat absorption also changes thereupon, and absorption and liberated heat are directly proportional to current strength I.
Nowadays most producer is to produce the production efficiency of semiconductor refrigerating assembly lower, and waste product is more, and product unsightly and performance is not good.
Therefore, the manufacture method that a kind of new semiconductor subassembly is provided is needed.
Summary of the invention
In order to overcome the technological deficiency existed in above-mentioned prior art, the object of the present invention is to provide a kind of manufacture method of semiconductor subassembly, production efficiency is high, and cost is low, and serviceability is good.
In order to realize foregoing invention object, technical scheme of the present invention is as follows:
A manufacture method for semiconductor subassembly, the method comprises the steps:
(1) by N-type and P type semiconductor crystal bar dicing, after cleaning, be placed on conveyer belt, nickel wire, after heating, is evenly sprayed in wafer surface;
(2) wafer is plated one deck nickel, one deck tin and one deck copper after having sprayed nickel again, and then wafer is cut granulating;
(3) N type semiconductor crystal grain and P type semiconductor crystal grain compartment of terrain to be arranged on cermet sheet and to use mould to fix, carrying out melting welding, obtained semiconductor refrigeration sheet;
(4) scrape cementing by the upside of insulating ceramic film, semiconductor cooling element is fixed between two pieces of insulating ceramic films, obtained semiconductor cooler semi-finished product.
Wherein, the warm temperature in described step (1) is 1010 ~ 1090 DEG C.
Wherein, the melting welding temperature in described step (3) is 708 ~ 745 DEG C.
Concrete, the melting welding time in described step (3) is 8h.
Wherein, in described step (2), the thickness of described nickel plating is 0.1-1mm, and described zinc-plated thickness is 0.2-1mm, and described copper-plated thickness is 0.1-1mm.
Preferably, the method is also included in the step that obtained semiconductor cooler semi-finished product carry out washing.
Compared with prior art, the invention has the beneficial effects as follows:
1. N type semiconductor crystal grain and P type semiconductor crystal grain compartment of terrain to be arranged on metallic conductor and to use mould to fix, then carrying out melting welding, the rate of finished products of product is improved;
2. outside semiconductor cooling element, be provided with a circle sealant tape, then outside sealant tape, use epoxy sealing, effectively prevent epoxy resin from flowing in the middle part of semiconductor cooler, and affect the performance of semiconductor cooler.
3. in step 1, wafer first need carry out spray nickel, after increasing spray nickel technique, crystal grain is firmly welded on potsherd and is not easy to come off.
Embodiment
Below in conjunction with specific embodiment, further detailed description explanation is done to technical scheme of the present invention.
The manufacture method of a kind of semiconductor subassembly of the present embodiment, the method comprises the steps:
(1) by N-type and P type semiconductor crystal bar dicing, after cleaning, be placed on conveyer belt, nickel wire, after heating, is evenly sprayed in wafer surface;
(2) wafer is plated one deck nickel, one deck tin and one deck copper after having sprayed nickel again, and then wafer is cut granulating;
(3) N type semiconductor crystal grain and P type semiconductor crystal grain compartment of terrain to be arranged on cermet sheet and to use mould to fix, carrying out melting welding, obtained semiconductor refrigeration sheet;
(4) scrape cementing by the upside of insulating ceramic film, semiconductor cooling element is fixed between two pieces of insulating ceramic films, obtained semiconductor cooler semi-finished product.
Wherein, the warm temperature in described step (1) is 1010 ~ 1090 DEG C.
Wherein, the melting welding temperature in described step (3) is 708 ~ 745 DEG C.
Concrete, the melting welding time in described step (3) is 8h.
Wherein, in described step (2), the thickness of described nickel plating is 0.1-1mm, and described zinc-plated thickness is 0.2-1mm, and described copper-plated thickness is 0.1-1mm.
Preferably, the method is also included in the step that obtained semiconductor cooler semi-finished product carry out washing.
Embodiment 1
The present embodiment comprises the steps:
(1) by N-type and P type semiconductor crystal bar dicing, after cleaning, be placed on conveyer belt, nickel wire is after heating, and warm temperature is 1050 DEG C, is evenly sprayed in wafer surface;
(2) wafer is plated again one deck nickel, one deck tin and one deck copper after having sprayed nickel, the thickness of described nickel plating is 0.1mm, and described zinc-plated thickness is 0.2mm, and described copper-plated thickness is 0.5, and then wafer is cut granulating;
(3) N type semiconductor crystal grain and P type semiconductor crystal grain compartment of terrain being arranged on cermet sheet and using mould to fix, carry out melting welding, melting welding temperature is 740 DEG C, and the melting welding time is 8h, obtained semiconductor refrigeration sheet;
(4) scrape cementing by the upside of insulating ceramic film, semiconductor cooling element is fixed between two pieces of insulating ceramic films, obtained semiconductor cooler semi-finished product.
After obtained semiconductor cooler semi-finished product, then wash.
Embodiment 2
The present embodiment comprises the steps:
(1) by N-type and P type semiconductor crystal bar dicing, after cleaning, be placed on conveyer belt, nickel wire is after heating, and warm temperature is 1040 DEG C, is evenly sprayed in wafer surface;
(2) wafer is plated again one deck nickel, one deck tin and one deck copper after having sprayed nickel, the thickness of described nickel plating is 0.2mm, and described zinc-plated thickness is 0.2mm, and described copper-plated thickness is 0.2, and then wafer is cut granulating;
(3) N type semiconductor crystal grain and P type semiconductor crystal grain compartment of terrain being arranged on cermet sheet and using mould to fix, carry out melting welding, melting welding temperature is 730 DEG C, and the melting welding time is 8h, obtained semiconductor refrigeration sheet;
(4) scrape cementing by the upside of insulating ceramic film, semiconductor cooling element is fixed between two pieces of insulating ceramic films, obtained semiconductor cooler semi-finished product.
After obtained semiconductor cooler semi-finished product, then wash.
Embodiment 3
The present embodiment comprises the steps:
(1) by N-type and P type semiconductor crystal bar dicing, after cleaning, be placed on conveyer belt, nickel wire is after heating, and warm temperature is 10350 DEG C, is evenly sprayed in wafer surface;
(2) wafer is plated again one deck nickel, one deck tin and one deck copper after having sprayed nickel, the thickness of described nickel plating is 0.1mm, and described zinc-plated thickness is 0.3mm, and described copper-plated thickness is 0.5, and then wafer is cut granulating;
(3) N type semiconductor crystal grain and P type semiconductor crystal grain compartment of terrain being arranged on cermet sheet and using mould to fix, carry out melting welding, melting welding temperature is 720 DEG C, and the melting welding time is 8h, obtained semiconductor refrigeration sheet;
(4) scrape cementing by the upside of insulating ceramic film, semiconductor cooling element is fixed between two pieces of insulating ceramic films, obtained semiconductor cooler semi-finished product.
After obtained semiconductor cooler semi-finished product, then wash.
In sum, N type semiconductor crystal grain and P type semiconductor crystal grain compartment of terrain to be arranged on metallic conductor and to use mould to fix by the present embodiment, then carry out melting welding, and the rate of finished products of product is improved;
Outside semiconductor cooling element, be provided with a circle sealant tape, then outside sealant tape, use epoxy sealing, effectively prevent epoxy resin from flowing in the middle part of semiconductor cooler, and affect the performance of semiconductor cooler.
In step 1, wafer first need carry out spray nickel, after increasing spray nickel technique, crystal grain is firmly welded on potsherd and is not easy to come off.
It should be noted that, above preferred embodiment is used for illustrative purposes only, but not limitation of the present invention, person skilled in the relevant technique, without departing from the spirit and scope of the present invention, done various conversion or modification, all belong to category of the present invention.
Claims (6)
1. a manufacture method for semiconductor subassembly, is characterized in that, the method comprises the steps:
(1) by N-type and P type semiconductor crystal bar dicing, after cleaning, be placed on conveyer belt, nickel wire, after heating, is evenly sprayed in wafer surface;
(2) wafer is plated one deck nickel, one deck tin and one deck copper after having sprayed nickel again, and then wafer is cut granulating;
(3) N type semiconductor crystal grain and P type semiconductor crystal grain compartment of terrain to be arranged on cermet sheet and to use mould to fix, carrying out melting welding, obtained semiconductor refrigeration sheet;
(4) scrape cementing by the upside of insulating ceramic film, semiconductor cooling element is fixed between two pieces of insulating ceramic films, obtained semiconductor cooler semi-finished product.
2. the manufacture method of a kind of semiconductor subassembly according to claim 1, is characterized in that, the warm temperature in described step (1) is 1010 ~ 1090 DEG C.
3. the manufacture method of a kind of semiconductor subassembly according to claim 1, is characterized in that, the melting welding temperature in described step (3) is 708 ~ 745 DEG C.
4. the manufacture method of a kind of semiconductor subassembly according to claim 3, is characterized in that, the melting welding time in described step (3) is 8h.
5. the manufacture method of a kind of semiconductor subassembly according to claim 1, is characterized in that, in described step (2), the thickness of described nickel plating is 0.1-1mm, and described zinc-plated thickness is 0.2-1mm, and described copper-plated thickness is 0.1-1mm.
6. the manufacture method of a kind of semiconductor subassembly according to claim 1, is characterized in that, the method is also included in the step that obtained semiconductor cooler semi-finished product carry out washing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510480360.0A CN105098052A (en) | 2015-08-08 | 2015-08-08 | Manufacturing method of semiconductor component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510480360.0A CN105098052A (en) | 2015-08-08 | 2015-08-08 | Manufacturing method of semiconductor component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105098052A true CN105098052A (en) | 2015-11-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510480360.0A Pending CN105098052A (en) | 2015-08-08 | 2015-08-08 | Manufacturing method of semiconductor component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105098052A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109722619A (en) * | 2019-03-21 | 2019-05-07 | 香河汇文节能科技有限公司 | A kind of semiconductor cooling element surface spraying method |
| ES2971184A1 (en) * | 2022-10-28 | 2024-06-03 | Univ Girona | Flexible thermoelectric generator to power low-consumption sensors (Machine-translation by Google Translate, not legally binding) |
-
2015
- 2015-08-08 CN CN201510480360.0A patent/CN105098052A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109722619A (en) * | 2019-03-21 | 2019-05-07 | 香河汇文节能科技有限公司 | A kind of semiconductor cooling element surface spraying method |
| ES2971184A1 (en) * | 2022-10-28 | 2024-06-03 | Univ Girona | Flexible thermoelectric generator to power low-consumption sensors (Machine-translation by Google Translate, not legally binding) |
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| PB01 | Publication | ||
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Application publication date: 20151125 |