CN105097980A - Thin film solar cell and manufacturing method thereof - Google Patents
Thin film solar cell and manufacturing method thereof Download PDFInfo
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- CN105097980A CN105097980A CN201410203029.XA CN201410203029A CN105097980A CN 105097980 A CN105097980 A CN 105097980A CN 201410203029 A CN201410203029 A CN 201410203029A CN 105097980 A CN105097980 A CN 105097980A
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- separator
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The application provides a thin film solar cell, comprising a metal substrate, a first insulating layer disposed on the metal substrate, a second insulating layer disposed on the first insulating layer, a back electrode layer disposed on the second insulating layer and a copper indium gallium diselenide light absorption layer disposed on the back electrode layer. The first and second insulating layers are used for preventing metal elements in the metal substrate from entry into the copper indium gallium diselenide light absorption layer, and the second insulating layer contains sodium elements which can be supplemented to the copper indium gallium diselenide light absorption layer for restoring a point defect due to the selenium deficiency in the copper indium gallium diselenide light absorption layer. In addition, the application further provides a manufacturing method of the thin film solar cell.
Description
Technical field
The application relates to area of solar cell, particularly, relates to a kind of copper-indium-galliun-selenium film solar cell and manufacture method thereof.
Background technology
Copper Indium Gallium Selenide (Cu (In, Ga) Se
2, be called for short CIGS) development of nearest 30 years of thin-film solar cells rapidly, it has, and cost is low, efficiency is high and the feature of good stability.CIGS thin film solar cell is plural layers stepped construction, and it generally comprises substrate, dorsum electrode layer, light absorbing zone (P type semiconductor CuInxGa (1-x) Se2 of sputtering and selenization technique or Co-evaporated Deposition), resilient coating (CdS that such as immersion method is produced), native oxide zinc layers (the native oxide zinc that sputtering method generates) and Window layer (Al-Doped ZnO that sputtering method generates).Outermost light entrance face also has grid electrode, for drawing photoelectric current.
Because CIGS is P type semiconductor, so wherein often there is point defect, generally show as scarce selenium.Such defect can be repaired by sodium atom being introduced this point, and the diffusion of sodium can optimize the performance of CIGS light absorbing zone.Usual one deck sodium fluoride that increases between dorsum electrode layer and CIGS light absorbing zone comes to the sodium element of light absorbing zone supplement trace in the prior art.Sodium fluoride film generally adopts thermal evaporation to obtain, and thickness is about 10nm, and deposition velocity is slow, and is difficult to depositing homogeneous.And sodium fluoride has very strong toxicity and severe corrosive, add the unsafe factor in production process.
Summary of the invention
This application provides a kind of thin-film solar cells at least partly can improving above-mentioned defect of the prior art.
According to an execution mode of the application, provide a kind of thin-film solar cells, it comprises metal substrate, layout the first separator, the second separator be arranged on the first separator, the dorsum electrode layer be arranged on the second separator, the copper indium gallium selenide optical absorption layer be arranged on dorsum electrode layer on the metallic substrate, wherein, first separator and the second separator enter copper indium gallium selenide optical absorption layer for stoping the metallic element in metal substrate, and the second separator comprises sodium element, and sodium element is added to copper indium gallium selenide optical absorption layer.
Embodiment there is provided a kind of method manufacturing thin-film solar cells according to another of the application, comprising: metal substrate is provided; The first separator is generated on the metallic substrate by sputtering method; First separator generates the second separator by sputtering method; Second separator generates dorsum electrode layer by sputtering method; And copper indium gallium selenide optical absorption layer is formed on dorsum electrode layer; Wherein, the first separator and the second separator enter copper indium gallium selenide optical absorption layer for stoping the metallic element in metal substrate, and the second separator comprises sodium element, and sodium element is added to copper indium gallium selenide optical absorption layer.
As mentioned above; in the thin-film solar cells that the application provides; due to the double-deck separator adopted; therefore, it is possible to stop metallic element, particularly ferro element in metal substrate to enter copper indium gallium selenide optical absorption layer better; thus protect the characteristic of semiconductor of this light absorbing zone not to be damaged, conversion efficiency can not reduce.And, owing to comprising sodium element in the second separator, so sodium element can also be supplemented to optimize the performance of copper indium gallium selenide optical absorption layer to light absorbing zone while prevention ferro element.
Accompanying drawing explanation
Fig. 1 is the sandwich construction schematic diagram of the thin-film solar cells according to the application's execution mode;
Fig. 2 is the flow chart of the method for manufacture thin-film solar cells according to another execution mode of the application; And
Fig. 3 is efficiency comparative's schematic diagram of thin-film solar cells according to the application's execution mode and thin-film solar cells of the prior art.
Embodiment
In order to understand the application better, make more detailed description with reference to the various aspects of accompanying drawing to the application.Be appreciated that the description of described drawings and detailed description just to the application's preferred embodiment, but not limit the scope of the application by any way.
Fig. 1 shows the sandwich construction schematic diagram of the thin-film solar cells 1000 according to the application's execution mode.As shown in Figure 1, thin-film solar cells 1000 comprises metal substrate 100, the first separator 200 be arranged in metal substrate 100, the second separator 300 be arranged on the first separator 200, is arranged in the dorsum electrode layer 400 on the second separator 300 and is arranged in Copper Indium Gallium Selenide (CIGS) light absorbing zone 500 on dorsum electrode layer 400.
Metal substrate 100 can be flexible substrate, the material wherein forming flexible metal substrate generally comprise in the metals such as stainless steel, pure titanium, aluminium one or more.Flexible metal substrate has lightweight, flexible advantage.In the present embodiment, metal substrate 100 can be at the bottom of stainless steel lining.
In one embodiment, the first separator 200 can be insulator separator, and it such as comprises one or more in alundum (Al2O3) layer, silicon oxide layer, layers of chrome and pure titanium layer.First separator 200 can such as be formed in metal substrate 100 by rf magnetron sputtering technique, and its thickness can be such as 1-2 micron usually in one embodiment.First separator 200 can also be such as alundum (Al2O3) layer.First separator 200 can be used for stoping metallic element, particularly ferro element in metal substrate 100 to enter CIGS light absorbing zone.
In one embodiment, the second separator 300 can be insulator separator, and it such as comprises containing soda-lime glass thin layer (SLGTF).Second separator 300 can be such as formed on the first separator 200 by rf magnetron sputtering technique, and its thickness can be 200-300 nanometer usually.In the present embodiment, the second separator 300 contains soda-lime glass thin layer for what adopt sputtering method sputtering target material soda-lime glass deposition to be formed.Second separator 300 not only can be used for stoping the metallic element in metal substrate 100, particularly ferro element to enter CIGS light absorbing zone further, and second separator 300 comprise sodium element, wherein, sodium element can be added to CIGS light absorbing zone to repair in CIGS light absorbing zone due to point defect that scarce selenium causes.
Use alundum (Al2O3) layer and manufacture the first separator 200 and the second separator 300 respectively containing soda-lime glass thin layer, these separators can be made to have good chemical stability, high deposition rate, and and matched coefficients of thermal expansion between substrate and back electrode is better, cost is low.And, alundum (Al2O3) layer and unified rf magnetron sputtering technique can be adopted to be formed containing soda-lime glass thin layer, process equipment and condition simple.Compared with sodium fluoride of the prior art, CIGS light absorbing zone can not only be entered by ferro element in barrier metal substrate 100 containing soda-lime glass thin layer, with safety, reliable, nontoxic and the mode that cost is low provides sodium element to CIGS light absorbing zone, thus the conversion efficiency of light absorbing zone can also be improved.
In one embodiment, dorsum electrode layer 400 can be metal molybdenum back electrode conductive layer, and rf magnetron sputtering also can be adopted to generate metal molybdenum dorsum electrode layer.Dorsum electrode layer 400 can be used for receiving the charge carrier with positive charge.
Get back to Fig. 1, according to the Window layer 800 that the thin-film solar cells 1000 of an execution mode of the application also can comprise the resilient coating 600 be arranged on CIGS light absorbing zone 500, be arranged in the native oxide zinc layers 700 on resilient coating 600 and be arranged in native oxide zinc layers 700.Wherein, resilient coating 600 can be such as cadmium sulfide (Cds) resilient coating produced by immersion method, native oxide zinc layers 700 can be such as the native oxide zinc resistive formation generated by sputtering method, and Window layer 800 can be such as the Al-Doped ZnO conductive layer generated by sputtering method.
When the thin-film solar cells work according to the application's execution mode, sunlight, through Window layer 800, native oxide zinc layers 700, resilient coating 600, is absorbed generation photo-generated carrier by CIGS light absorbing zone 500.In the region of light absorbing zone 500 close to resilient coating 600 under the effect of internal electric field, the carrier separation of different electric charge, negative electrical charge moves towards Window layer 800, and positive charge moves towards dorsum electrode layer 400.Solar energy transfers operational electric power continuously to thus.
Resilient coating 600 affects the problem of cell output for slowing down Lattice Matching between CIGS light absorbing zone 500 and Window layer 800 bad, effectively can stop Window layer 800 damage to CIGS light absorbing zone 500 in preparation process simultaneously, the battery short circuit phenomenon caused thus can be eliminated.The native oxide zinc layers 700 of low-power sputtering has two effects, and one is injure the sputtering of resilient coating when preventing Window layer from building, and another one is that high-resistance native oxide zinc layers plays the effect preventing battery drain.Window layer 800 for the charge carrier of receiving belt negative electrical charge, thus when preventing CIGS thin film solar cell power generation, because electrical leakage problems causes device performance to decline.
Fig. 2 illustrates the flow chart of the method 2000 of the manufacture thin-film solar cells according to another execution mode of the application.As shown in Figure 2, in step s 201, metal substrate 100 is provided.As mentioned above, in some execution modes of the application, stainless steel foil can be used to form flexible metal substrate 100.
In step S202, metal substrate 100 generates the first separator 200 by sputtering method, wherein, sputtering method can comprise rf magnetron sputtering technique.In the present embodiment, in metal substrate 100, sputter one deck alundum (Al2O3) as the first separator 200 by rf magnetron sputtering technique, its thickness is such as about 1-2 micron.
In step S203, the first separator 200 generates the second separator 300 by sputtering method.In the present embodiment, by rf magnetron sputtering technique sputtering target material soda-lime glass, then deposition is formed containing soda-lime glass thin layer as the second separator 200, and its thickness is about 200-300 nanometer.Little containing iron-holder in soda-lime glass, therefore can not pollute CIGS light absorbing zone.
In step S204, the second separator 300 generates dorsum electrode layer 400 by sputtering method.In the present embodiment, use rf magnetron sputtering technique sputtering molybdenum target, thus deposition forms molybdenum dorsum electrode layer as dorsum electrode layer 400.
In step S205, dorsum electrode layer 400 forms CIGS light absorbing zone 500.Wherein, CIGS light absorbing zone 500 is formed by sputtering and selenization technique or by Co-evaporated Deposition.In the present embodiment, use rf magnetron sputtering selenizing to prepare CIGS light absorbing zone, the light absorbing zone thickness of deposition is about 2 microns.
In addition, as shown in Figure 2, in step S206, CIGS light absorbing zone 500 use chemical bath method deposit Cds (cadmium sulfide) resilient coating 600.It should be noted that and other materials that can substitute Cds also can be used as resilient coating.In step S207, resilient coating 600 use sputtering method generate native oxide zinc layers 700.In the present embodiment, cadmium sulfide resilient coating 600 uses rf magnetron sputtering technique sputtering zinc oxide ceramic target, thus deposition intrinsic zinc oxide resistive formation is as native oxide zinc layers 700.In step S208, generating window layer 800 in native oxide zinc layers 700.Wherein, Al-Doped ZnO conductive layer can be used as Window layer 800, also by using the graphene film of N-shaped as conducting window layer 800.The graphene film of N-shaped comprises the single-layer graphene of multilayer laminated setting.
Fig. 3 illustrates efficiency comparative's schematic diagram of the thin-film solar cells 1000 according to the application's execution mode and thin-film solar cells of the prior art.As can be seen from Figure 3, be provided with alundum (Al2O3) layer (the first separator 200) according to the application's execution mode and containing the efficiency of the thin-film solar cells 1000 of soda-lime glass thin layer (the second separator 300) apparently higher than the solar cell not being provided with this double-deck separator.
Be described with reference to the exemplary embodiment of accompanying drawing to the application above.It should be appreciated by those skilled in the art that the object that above-mentioned embodiment is only used to illustrate and the example of lifting, instead of be used for limiting.Any amendment done under all instructions in the application and claims, equivalently to replace, all should be included in and this application claims in the scope of protection.
Claims (13)
1. a thin-film solar cells, comprising:
Metal substrate;
First separator, is arranged in described metal substrate;
Second separator, is arranged on described first separator;
Dorsum electrode layer, is arranged on described second separator; And
Copper indium gallium selenide optical absorption layer, is arranged on described dorsum electrode layer;
Wherein, described first separator and described second separator enter described copper indium gallium selenide optical absorption layer for stoping the metallic element in described metal substrate, and,
Wherein, described second separator comprises and can be supplemented to described copper indium gallium selenide optical absorption layer to repair the sodium element of the point defect caused due to scarce selenium wherein.
2. thin-film solar cells as claimed in claim 1, wherein, described first separator is alundum (Al2O3) layer or silicon oxide layer.
3. thin-film solar cells as claimed in claim 1, wherein, described second separator comprises containing soda-lime glass layer.
4. thin-film solar cells as claimed in claim 1, wherein, described metal substrate is flexible substrate, the material forming described flexible substrate comprise in stainless steel, titanium and aluminium one or more.
5. thin-film solar cells as claimed in claim 1, wherein, described dorsum electrode layer is molybdenum back electrode conductive layer.
6. thin-film solar cells as claimed in claim 1, wherein, described first separator and described second separator are manufactured to the thickness of thickness and the 200-300 nanometer respectively with 1-2 micron by rf magnetron sputtering technique.
7. thin-film solar cells as claimed in claim 1, also comprises resilient coating, Window layer and the native oxide zinc layers between described resilient coating and Window layer,
Wherein, described resilient coating is arranged between described copper indium gallium selenide optical absorption layer and described Window layer, to reduce the lattice mismatch between described copper indium gallium selenide optical absorption layer and described Window layer, and wherein, described Window layer is arranged in described native oxide zinc layers, for receiving the electronegative charge carrier that described copper indium gallium selenide optical absorption layer generates, thus the electric leakage produced when preventing described thin-film solar cells from generating electricity.
8. manufacture a method for thin-film solar cells, comprising:
The first separator is generated on the metallic substrate by sputtering method;
Described first separator generates the second separator by sputtering method;
Described second separator generates dorsum electrode layer by sputtering method; And
Described dorsum electrode layer forms copper indium gallium selenide optical absorption layer;
Wherein, described first separator and described second separator enter described copper indium gallium selenide optical absorption layer for stoping the metallic element in described metal substrate, and described second separator comprises and can be added to described copper indium gallium selenide optical absorption layer to repair the sodium element of the point defect caused due to scarce selenium in described copper indium gallium selenide optical absorption layer.
9. method as claimed in claim 8, wherein, the step that described dorsum electrode layer is formed copper indium gallium selenide optical absorption layer comprises by sputtering and selenization technique formation copper indium gallium selenide optical absorption layer or forms copper indium gallium selenide optical absorption layer by Co-evaporated Deposition.
10. method as claimed in claim 8, wherein, described first separator is alundum (Al2O3) layer or silicon oxide layer, and has the thickness of 1-2 micron.
11. methods as claimed in claim 8, wherein, described second separator comprises containing soda-lime glass layer, and has the thickness of 200-300 nanometer.
12. methods as claimed in claim 8, wherein, described metal substrate is flexible substrate, the material forming described flexible substrate comprise in stainless steel, titanium and aluminium one or more.
13. methods as claimed in claim 8, also comprise:
Described copper indium gallium selenide optical absorption layer generates resilient coating by chemical bath method;
Described resilient coating generates native oxide zinc layers by sputtering method; And
Generating window layer in described native oxide zinc layers.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410203029.XA CN105097980B (en) | 2014-05-14 | 2014-05-14 | Thin-film solar cells and its manufacturing method |
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| CN201410203029.XA CN105097980B (en) | 2014-05-14 | 2014-05-14 | Thin-film solar cells and its manufacturing method |
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| CN105097980B CN105097980B (en) | 2018-08-03 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110416346A (en) * | 2018-04-28 | 2019-11-05 | 北京铂阳顶荣光伏科技有限公司 | A kind of copper indium gallium selenium solar cell component and preparation method thereof |
| WO2020019464A1 (en) * | 2018-07-24 | 2020-01-30 | 北京铂阳顶荣光伏科技有限公司 | Thin film solar cell and method for preparing same |
| CN111384188A (en) * | 2018-12-27 | 2020-07-07 | 北京铂阳顶荣光伏科技有限公司 | Thin film solar cell and preparation method thereof |
| CN116613230A (en) * | 2023-06-26 | 2023-08-18 | 云谷（固安）科技有限公司 | Solar cell and preparation method thereof |
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| CN110416346A (en) * | 2018-04-28 | 2019-11-05 | 北京铂阳顶荣光伏科技有限公司 | A kind of copper indium gallium selenium solar cell component and preparation method thereof |
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| CN116613230B (en) * | 2023-06-26 | 2024-05-28 | 云谷（固安）科技有限公司 | Solar cell and preparation method thereof |
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