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CN105097842A - 有源矩阵有机发光二极管阵列基板及制作方法和显示装置 - Google Patents

有源矩阵有机发光二极管阵列基板及制作方法和显示装置 Download PDF

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CN105097842A
CN105097842A CN201510491363.4A CN201510491363A CN105097842A CN 105097842 A CN105097842 A CN 105097842A CN 201510491363 A CN201510491363 A CN 201510491363A CN 105097842 A CN105097842 A CN 105097842A
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蔡鹏�
王有为
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BOE Technology Group Co Ltd
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Priority to US15/500,951 priority patent/US10043710B2/en
Priority to PCT/CN2016/082891 priority patent/WO2017024851A1/en
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Abstract

本发明公开了一种有源矩阵有机发光二极管阵列基板及其制作方法和显示装置，以改善显示装置的像素暗点不良现象，提高产品品质。阵列基板包括基板和位于基板上且阵列排布的多个像素单元，相邻的像素单元通过像素限定层间隔，每个像素单元包括薄膜晶体管和有机发光二极管，阵列基板还包括：位于薄膜晶体管的源漏极层与有机发光二极管的底电极层之间的绝缘层，绝缘层具有过孔，有机发光二极管的底电极层通过过孔与薄膜晶体管的源漏极层连接；位于有机发光二极管的底电极层在过孔处形成的凹陷之上的填充层，像素限定层和有机发光二极管的有机发光层覆盖于填充层之上。

Description

有源矩阵有机发光二极管阵列基板及制作方法和显示装置
技术领域
本发明涉及显示技术领域，特别是涉及一种有源矩阵有机发光二极管阵列基板及其制作方法和显示装置。
背景技术
OLED(OrganicLight-EmittingDiode，有机发光二极管)显示屏由于具有薄、轻、宽视角、主动发光、发光颜色连续可调、成本低、响应速度快、能耗小、驱动电压低、工作温度范围宽、生产工艺简单、发光效率高及可柔性显示等优点，已被列为极具发展前景的下一代显示技术。
OLED依据驱动方式的不同，可分为PMOLED(PassiveMatrixOLED，无源矩阵有机发光二极管)与AMOLED(ActiveMatrixOLED，有源矩阵有机发光二极管)两种。其中，AMOLED采用独立的TFT(ThinFilmTransistor，薄膜晶体管)去控制每个像素，每个像素皆可以连续且独立的驱动发光，AMOLED的驱动电压较低，寿命较长，可应用于大尺寸平板显示。
现有的AMOLED显示装置，出于高分辨率的需求，并且由于制作工艺存在一定的误差，很容易导致有机发光二极管的有机发光层进入到平坦化层的过孔内与底电极层接触，从而导致显示装置存在像素暗点不良，影响到产品品质。
发明内容
本发明实施例的目的是提供一种AMOLED阵列基板及其制作方法和显示装置，以改善显示装置的像素暗点不良现象，提高产品品质。
本发明实施例提供了一种AMOLED阵列基板，包括基板和位于基板上且阵列排布的多个像素单元，相邻的像素单元通过像素限定层间隔，每个像素单元包括TFT和OLED，所述阵列基板还包括：
位于TFT的源漏极层与OLED的底电极层之间的绝缘层，所述绝缘层具有过孔，所述OLED的底电极层通过所述过孔与所述TFT的源漏极层连接；
位于所述OLED的底电极层在所述过孔处形成的凹陷之上的填充层，所述像素限定层和所述OLED的有机发光层覆盖于所述填充层之上。
在本发明实施例的技术方案中，由于底电极层在过孔处形成的凹陷之上设置有填充层，填充层可以有效填补该凹陷，因此，在后续蒸镀有机发光层时，有机发光层不会进入到凹陷内与底电极层接触。相比现有技术，本方案能够改善显示装置的像素暗点不良现象，提高产品品质。
优选的，所述填充层凸出于所述底电极层的主体平面。该方案中，填充层凸出于底电极层的主体平面，可以起到隔离支撑的作用，此结构应用于柔性显示装置时，可以有效提高柔性显示装置的耐弯曲性和抗冲击性能。
较佳的，所述填充层向所述凹陷的边缘外侧延伸。这样，填充层可以将凹陷的边缘封闭，从而能够更好的防止有机发光层进入凹陷内与底电极层接触。
可选的，所述填充层向所述凹陷靠近所述底电极层的主体平面的边缘部分的外侧延伸。该方案亦能够更好的防止有机发光层进入凹陷内与底电极层接触。
可选的，所述填充层的材质为有机材料或者无机材料。
具体的，所述绝缘层包括：位于TFT的源漏极层之上的钝化层，以及位于钝化层之上的平坦化层。
可选的，所述基板为柔性基板，或者所述基板为硬质基板。
可选的，所述TFT为顶栅型TFT或者底栅型TFT。
本发明实施例还提供了一种AMOLED阵列基板的制作方法，包括：
在TFT的源漏极层之上形成绝缘层，所述绝缘层具有过孔；
在所述绝缘层之上形成OLED的底电极层，所述底电极层通过所述过孔与源漏极层连接；
在所述底电极层在过孔处形成的凹陷之上形成填充层；
在所述填充层之上形成覆盖填充层的像素限定层和OLED的有机发光层。
采用该方法步骤在制作AMOLED阵列基板时，在底电极层在过孔处形成的凹陷之上形成填充层，填充层可以有效填补该凹陷，从而使得，在后续蒸镀有机发光层时，有机发光层不会进入到凹陷内与底电极层接触。采用该方法制作的阵列基板应用于显示装置，能够改善显示装置的像素暗点不良现象，提高产品品质。
本发明实施例还提供了一种显示装置，包括前述任一技术方案所述的阵列基板。由于改善了像素暗点不良现象，该显示装置具有较佳的产品品质。
附图说明
图1为本发明一实施例AMOLED阵列基板截面结构示意图；
图2为本发明一实施例中凹陷、填充层、像素限定层俯视结构示意图；
图3为本发明一实施例AMOLED阵列基板截面结构示意图；
图4为为本发明另一实施例中凹陷、填充层、像素限定层俯视结构示意图；
图5为本发明一实施例AMOLED阵列基板的制作方法流程示意图。
附图标记：
1-基板；2-缓冲层；3-栅绝缘层；4-有源层；5-层间绝缘层；6-栅极；7-源漏极层；8-钝化层；9-平坦化层；10-底电极层；11-像素限定层；12-有机发光层；13-顶电极层；14-封装层；15-填充层；16-存储电容上极板；17-存储电容下极板层；18-凹陷；100-TFT；200-OLED；300-存储电容。
具体实施方式
为了改善显示装置的像素暗点不良现象，提高产品品质，本发明实施例提供了一种AMOLED阵列基板及其制作方法和显示装置。为使本发明的目的、技术方案和优点更加清楚，以下举实施例对本发明作进一步详细说明。
如图1和图2所示，本发明实施例提供了一种AMOLED阵列基板，包括基板1和位于基板1上且阵列排布的多个像素单元，相邻的像素单元通过像素限定层11间隔，每个像素单元包括TFT100和OLED200，阵列基板还包括：
位于TFT100的源漏极层7与OLED200的底电极层10之间的绝缘层，绝缘层具有过孔，OLED200的底电极层10通过过孔与TFT100的源漏极层7连接；
位于OLED200的底电极层10在过孔处形成的凹陷18之上的填充层15，像素限定层11和OLED200的有机发光层12覆盖于填充层15之上。
在本发明实施例的技术方案中，基板1可以为柔性基板，应用于柔性显示装置。柔性基板的材质不限，例如可以包括聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜、聚对苯二甲酸乙二醇酯和聚萘二甲酸乙二醇酯中的至少一种。此外，基板1也可以为常见的硬质基板，例如玻璃基板、树脂基板等等。
在本发明实施例的技术方案中，TFT可以为顶栅型TFT或者底栅型TFT。图1所示的实施例中，TFT100具体采用了顶栅型TFT。此外，为满足产品的电气性能要求，以实现其功能原理，对于本领域人员可知，每个像素单元还包括存储电容300。
请参照图1所示，该实施例中AMOLED阵列基板的层结构具体包括：基板1、缓冲层2、有源层4和存储电容下极板层17、栅绝缘层3、栅极6和存储电容上极板层16、层间绝缘层5、源漏极层7、钝化层8、平坦化层9、OLED200的底电极层10、填充层15、像素限定层11、OLED200的有机发光层12、OLED200的顶电极层13、封装层14，等等。其中，有源层4包括与源漏极层7连接的离子注入部分，而存储电容下极板层17的材质与有源层4相同，并且也进行了离子注入处理；存储电容上极板层16可以采用与栅极6相同的材质；填充层15的具体材质不限，可以选用有机材料或者无机材料；当阵列基板为柔性显示装置的阵列基板时，封装层14为柔性封装层，具体可以为多个无机层和有机层交替沉积形成的混合层。
如图1所示，绝缘层包括：位于TFT100的源漏极层7之上的钝化层8，以及位于钝化层8之上的平坦化层9。值得一提的是，绝缘层的层结构并不局限于此两层，可以根据需要进行相应调整。当在绝缘层之上制作OLED200的底电极层10时，该底电极层10通过绝缘层的过孔与TFT100的源漏极层7连接，并且会在过孔处形成凹陷18。
在现有技术中，凹陷的上方直接制作像素限定层，出于高分辨率的需求，像素限定层的开口边缘与该凹陷的边缘非常靠近，由于制作工艺存在一定的误差，很容易导致像素限定层的开口边缘与凹陷的边缘之间具有缝隙，从而导致OLED的有机发光层进入到凹陷内并与底电极层接触，这会导致显示装置存在像素暗点不良，从而影响到产品品质。
而在本发明实施例的技术方案中，由于底电极层10在过孔处形成的凹陷18之上设置有填充层15，填充层15可以有效填补该凹陷18，因此，在后续蒸镀有机发光层12时，有机发光层12不会进入到凹陷18内与底电极层10接触。相比现有技术，本方案能够改善显示装置的像素暗点不良现象，提高产品品质。
填充层15的上表面可以与底电极层10的主体平面相平，但优选的，如图1所示，填充层15凸出于底电极层10的主体平面。填充层15凸出于底电极层10的主体平面，可以起到隔离支撑的作用，此结构应用于柔性显示装置时，可以有效提高柔性显示装置的耐弯曲性和抗冲击性能。
在图1和图2所示的实施例中，填充层15向凹陷18的边缘外侧延伸。这样，填充层15可以将凹陷18的边缘封闭，从而能够更好的防止有机发光层12进入凹陷18内与底电极层10接触。
在图3和图4所示的实施例中，填充层15向凹陷18靠近底电极层10的主体平面的边缘部分的外侧延伸。该方案亦能够更好的防止有机发光层12进入凹陷18内与底电极层10接触。
如图5所示，本发明实施例还提供了一种AMOLED阵列基板的制作方法，包括如下步骤：
步骤101、在TFT的源漏极层之上形成绝缘层，绝缘层具有过孔；
步骤102、在绝缘层之上形成OLED的底电极层，底电极层通过过孔与源漏极层连接；
步骤103、在底电极层在过孔处形成的凹陷之上形成填充层；
步骤104、在填充层之上形成覆盖填充层的像素限定层和OLED的有机发光层。
采用该方法步骤在制作AMOLED阵列基板时，在底电极层在过孔处形成的凹陷之上形成填充层，填充层可以有效填补该凹陷，从而使得，在后续蒸镀有机发光层时，有机发光层不会进入到凹陷内与底电极层接触。采用该方法制作的阵列基板应用于显示装置，能够改善显示装置的像素暗点不良现象，提高产品品质。
可以理解的，AMOLED阵列基板在制作时，除上述步骤之外，还包括制作其它结构层的步骤，以使阵列基板能够实现其功能，对此这里不再详细赘述。
本发明实施例还提供了一种显示装置，包括前述任一技术方案的阵列基板。由于改善了像素暗点不良现象，该显示装置具有较佳的产品品质。显示装置的类型不限，可以为普通的平板显示装置，也可以为柔性显示装置。显示装置的具体类型可以为显示器、电子纸、平板电脑、电视机、智能显示标签、智能显示卡，等等。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种有源矩阵有机发光二极管阵列基板，其特征在于，包括基板和位于基板上且阵列排布的多个像素单元，相邻的像素单元通过像素限定层间隔，每个像素单元包括薄膜晶体管和有机发光二极管，所述阵列基板还包括：
位于薄膜晶体管的源漏极层与有机发光二极管的底电极层之间的绝缘层，所述绝缘层具有过孔，所述有机发光二极管的底电极层通过所述过孔与所述薄膜晶体管的源漏极层连接；
位于所述有机发光二极管的底电极层在所述过孔处形成的凹陷之上的填充层，所述像素限定层和所述有机发光二极管的有机发光层覆盖于所述填充层之上。
2.如权利要求1所述的阵列基板，其特征在于，所述填充层凸出于所述底电极层的主体平面。
3.如权利要求2所述的阵列基板，其特征在于，所述填充层向所述凹陷的边缘外侧延伸。
4.如权利要求2所述的阵列基板，其特征在于，所述填充层向所述凹陷靠近所述底电极层的主体平面的边缘部分的外侧延伸。
5.如权利要求1所述的阵列基板，其特征在于，所述填充层的材质为有机材料或者无机材料。
6.如权利要求1所述的阵列基板，其特征在于，所述绝缘层包括：位于薄膜晶体管的源漏极层之上的钝化层，以及位于钝化层之上的平坦化层。
7.如权利要求1所述的阵列基板，其特征在于，所述基板为柔性基板，或者所述基板为硬质基板。
8.如权利要求1～7任一项所述的阵列基板，其特征在于，所述薄膜晶体管为顶栅型薄膜晶体管或者底栅型薄膜晶体管。
9.一种有源矩阵有机发光二极管阵列基板的制作方法，其特征在于，包括：
在薄膜晶体管的源漏极层之上形成绝缘层，所述绝缘层具有过孔；
在所述绝缘层之上形成有机发光二极管的底电极层，所述底电极层通过所述过孔与源漏极层连接；
在所述底电极层在过孔处形成的凹陷之上形成填充层；
在所述填充层之上形成覆盖填充层的像素限定层和有机发光二极管的有机发光层。
10.一种显示装置，其特征在于，包括如权利要求1～8任一项所述的阵列基板。
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