CN105070820A - Fabrication method for novel thin film thermoelectric semiconductor device with separated cold end and hot end - Google Patents
Fabrication method for novel thin film thermoelectric semiconductor device with separated cold end and hot end Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 36
- 238000005245 sintering Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000000465 moulding Methods 0.000 claims 2
- 239000006227 byproduct Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 9
- 238000005057 refrigeration Methods 0.000 description 6
- 230000005619 thermoelectricity Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention relates to a fabrication method for a novel thin film thermoelectric semiconductor device with separated cold end and hot end, and provides a novel thermoelectric semiconductor device which is advantageous in that a cold end and a hot end of the traditional thermoelectric semiconductor device are separated by using a thin film fabrication technique. According to the solution scheme provided by the invention, thermoelectric semiconductor thin film units (13) and (14) and relevant conductive thin film electrodes (12) and (17) are fabricated on a high-temperature thin film (11), the cold end and the hot end of the thermoelectric semiconductor device are respectively formed on overlapped parts of the thermoelectric semiconductor thin films and the conductive thin films, gaps between the conductive thin films (12) and (17) form transition segments of the cold end and the hot end, and (15) and (16) are power supply leading-out terminals. The thin film thermoelectric semiconductor units are connected in series according to a certain rule to form a component unit of the thin film thermoelectric semiconductor device, and then pressurized, sintered and cured in a vacuum or protective atmosphere environment so as to fabricate a component module of the thermoelectric semiconductor device with separated cold end and hot end, and the whole novel thermoelectric semiconductor device is constructed after a protective shell and a heat conduction part are installed.
Description
Technical field
The present invention relates to the manufacturing technology of novel thermoelectricity semiconductor device.
Background technology
The basic structure of Conventional thermoelectric semiconductor device is shown in Fig. 1, by N-type thermoelectric semiconductor elements (1) and P type thermoelectric semiconductor elements (2), by conductor (3), (4), N-type, P type thermoelectric semiconductor elements connected in electrical series are connected, form a common refrigeration thermoelectric pile, usually the thermoelectric pile that a pair N-type, P type thermoelectric semiconductor elements are formed is called a pair thermocouple.
After connecting DC power supply according to the polarity of Fig. 1, the sense of current flows to P type thermoelectric semiconductor elements (2) by N-type thermoelectric semiconductor elements (1), and the temperature at P, N combination of elements face place that conductor (3) connects declines and absorbs heat, and forms the cold junction of thermoelectric pile.At the other end of same thermoelectric element, the sense of current is that P type thermoelectric semiconductor elements (2) flows to N-type thermoelectric semiconductor elements (1) through power supply, and the temperature at P, N combination of elements face place that conductor (4) connects rises and heat release, forms the hot junction of thermoelectric pile.(if by the error-polarity connection of DC power supply, then the cold junction of thermoelectric pile and hot junction also can be exchanged).By various heat transfer means such as heat-exchange apparatus, constantly dispelled the heat in the hot junction of thermoelectric pile and keep certain temperature, the cold junction of thermoelectric pile being put into and needing to remove absorbing and cooling temperature in the operational environment of cooling, form the basic functional principle of thermoelectric cooling.
Adopt the component structure identical with Fig. 1, according to the structure shown in Fig. 2, in 5 end heat radiations of thermoelectric element, heat energy is applied at 6,7 ends of thermoelectric element, the hot and cold two ends of thermoelectric element are made to keep certain temperature difference, then wire 6,7 two ends of thermoelectric element will produce electromotive force, and external load 8 just has electrical power to export, and form the basic functional principle of thermo-electric generation.
Because the refrigerating capacity of a pair P/N thermoelectric semiconductor refrigeration thermoelectric element is very little, the thermoelectric pile of practical application is by multipair P/N thermoelectric semiconductor refrigeration thermoelectric element connected in electrical series or is together in parallel, be packaged into an entirety, meet different application demands, Fig. 3 is thermoelectric semiconductor elements series connection schematic diagram, according to the electric power polarity indicated in Fig. 3, (9) are cold junctions, and (10) are hot junctions.Fig. 4 is the schematic diagram that the thermoelectric pile of multipair thermoelectric semiconductor elements to series connection is packaged into product.
The basic structure of Conventional thermoelectric semiconductor device and operation principle, when result in thermoelectric semiconductor devices function, two working face (see figure 4)s in device (A) face and (B) face, one side heats, one side refrigeration (being determined by the sense of current flowing through the thermoelectric semiconductor elements that P/N connects).Due to the physical characteristic that thermoelectric semiconductor material is intrinsic, such as: the coefficient of heat conduction of material, the specific insulation of material, the heat exchange mechanism that result in thermoelectric semiconductor elements inside is difficult to overcome, the internal heat exchange of the heat transfer physical characteristic generation that these materials are intrinsic, counteract the performance heating and freeze that thermoelectric semiconductor material own physical effect (paltie effect) produces, that is, the cold junction of outside and the temperature difference index in hot junction of the display of thermoelectric semiconductor device are that thermoelectric element materials internal heat exchange is (cold, heat is offset) balance later result.
The thermocouple element crystal grain of thermoelectric semiconductor device, use the semi-conducting material of bulk through cutting, be polished into specific dimensions, then make by the welding of said structure order, the distance in finished product thermoelectric device cold junction and hot junction, according to the size of power, roughly between 2-5 millimeter, the basic structure of thermoelectric device and operation principle, determine thermoelectric semiconductor device when cooling condition works, two working face (see figure 4)s up and down of device, one side heats, one side refrigeration (being determined by the sense of current flowing through P/N thermoelectric semiconductor elements), due to the physical characteristic that thermoelectric semiconductor material is intrinsic, such as: the coefficient of heat conduction of material, the specific insulation of material, the heat exchange mechanism that result in thermoelectric semiconductor elements inside is difficult to overcome, the internal heat exchange that these intrinsic physical characteristics produce, counteract the performance heating and freeze that thermoelectric semiconductor material self-characteristic produces.
For the thermoelectric semiconductor device working in generating operation mode, the temperature difference between the output voltage of its port and the cool and heat ends of thermoelectric device is directly proportional, the heat exchange of thermoelectric device inside, constrains the thermo-electric generation performance of thermoelectric device equally.
In other words, the cold junction of outside and the temperature difference index of hot junction (usually having the distance of 2-5 millimeter) of the display of Conventional thermoelectric semiconductor device are that thermoelectric element materials internal heat exchange is (cold, heat is offset) balance later result, this is also the main cause of restriction thermoelectric device overall performance, manage to reduce internal heat exchange to the impact of thermoelectric device performance index, it is the emphasis direction that whole thermoelectric semiconductor industry is studied thermoelectric material, such as, change the crystallite dimension of thermoelectric material, change the phon scattering mechanism of thermoelectric material, nanometer technology is utilized to change the dimension of material, limit the quantum tunneling effect of material and make nano thin-film etc., it is all the thermal conductivity for reducing material internal, the figure of merit of thermoelectric material is promoted with this, but, be limited by the architectural feature of Conventional thermoelectric semiconductor device, above-mentioned effort produces little effect, constrain the popularization application of pyroelectric technology.
Summary of the invention
Object of the present invention, is to provide the brand-new thermoelectric semiconductor device that the cold junction of Conventional thermoelectric semiconductor device is separated with hot junction by a kind of employing film fabrication techniques.
Solution of the present invention is, between the hot junction forming thermoelectric semiconductor device essential characteristic and cold junction, increase by one section of electric path is also the mutual changeover portion of cold/hot temperature simultaneously, the cold junction of thermoelectric device unit and hot junction is separated, realizes the object of thermoelectric device cool and heat ends separation.
Concrete manufacturing process adopts film or thick film circuit production Technology, high-temperature resistant membrane makes and forms the hot junction of thermoelectric semiconductor device and the physical structure of cold junction, internal electric syndeton, film (or thick film) the thermoelectric semiconductor device cell that the relative distance in cold junction and hot junction goes between at the changeover portion that physically can adjust arbitrarily and Thin film conductive, these thin film thermoelectric semiconductor units are connected and composed thin film thermoelectric semiconductor device component unit according to certain rule series connection (electric and physical structure), then the pressure sintering solidification under vacuum or protective atmosphere environment, make cold, the assembly module of the thin film thermoelectric semiconductor device that hot junction is separated, complete novel thermoelectricity semiconductor device is formed after protecting sheathing and conducting-heat elements are installed.
Fig. 5 is shown in by solution schematic diagram of the present invention, according to the structure (cold junction of setting on high-temperature resistant membrane (11), hot junction and changeover portion), first print cold on film, the conductive film (12) that hot junction is separated and (17), then P type thermoelectric semiconductor material (13) is applied respectively at ad-hoc location, and N-type thermoelectric semiconductor material (14), in the part that thermoelectric semiconductor film is overlapping with conductive film, form cold junction and the hot junction of thermoelectric semiconductor device respectively, interval between conductive film (12) and (17) forms cold, the changeover portion in hot junction, relative distance can adjust by application demand, (15) be the power outlet of thermoelectric semiconductor thin-film device with (16).
The production technology of thermal electric film, can adopt magnetron sputtering, chemical deposition, molecule extension etc. can the application technology of film former, and film substrate generates thermoelectric film;
Adopt thick film circuit production Technology, screen printing technique or spraying technology can be adopted, the structure of thermoelectric semiconductor material powder by setting is printed on film substrate.
In order to obtain better practical application index (larger power output, higher port voltage etc.), the thin-film device unit that above-mentioned thermoelectric semiconductor material film is formed can on a complete film with suitable production process with the form continuous seepage of series connection hundreds of or thousands of thin-film device unit, form one and have complete thin film thermoelectric device assembly of elements compared with large port electromotive force, then the physical dimension of suitable size is folded into according to certain design specification, Fig. 6 is shown in by method for folding schematic diagram, wherein (18) are continuous film thermoelectric semiconductor device foldable structure schematic diagrames, (19), (20) be the power supply lead wire of thermoelectric semiconductor thin-film device.Different folding modes can make the thermoelectric device meeting different application demand (dimensions).Or by multiple (particular port electromotive force) thin-film device unit pressed specific quantity series connection and make, physically adopting stacked being placed in, electric parallel form, form the thin film thermoelectric device parts of larger electrical power, Fig. 7 is shown in by stacking schematic diagram, wherein (22) are multilayer thermoelectricity semiconductive thin film parts, and (21), (23) are power outlets.
The thermoelectric semiconductor thin film component that said method is made; put into the pressure sintering furnace of vacuum or protective atmosphere; according to different thermoelectric materials; in the temperature range of 200 to 1400 degree; apply the pressure of 50-200 kilogram/square centimeter simultaneously, carry out thermoelectric film material growth sintering, make thermoelectric device module; then heat-conducting plate and guard shield are installed, make the corresponding thermoelectric semiconductor elements of cool and heat ends being physically separated, electrical resistance can completely thermoelectric semiconductor device.
accompanying drawing illustrates:
Fig. 1, thermoelectric semiconductor refrigeration principle schematic diagram;
Fig. 2, thermoelectric semiconductor thermo-electric generation principle schematic;
Fig. 3, thermoelectric semiconductor elements series connection schematic diagram;
Fig. 4, the multipair thermoelectric semiconductor thermoelectric pile to series connection is packaged into product schematic diagram;
The thin film thermoelectric semiconductor structure schematic diagram that Fig. 5, cold junction are separated with hot junction;
Fig. 6, continuous film thermoelectric semiconductor device foldable structure schematic diagram;
Fig. 7, multilayer thermoelectricity semiconductive thin film parts stacked structure schematic diagram;
The thermal electric film device fabrication processes schematic diagram of Fig. 8, Fig. 9, Figure 10, employing P/N thermoelectric semiconductor material;
The thermal electric film manufacturing process schematic diagram of Figure 11, Figure 12, the single thermoelectric material of employing;
The novel flat-plate thermoelectric semiconductor device schematic diagram of Figure 13, installation heat-conducting plate and guard shield;
embodiment:
Embodiment 1: see Fig. 8, Fig. 9, Figure 10, in high temperature resistant thin (24) that set size upper printing by cold, the conductive layer (25) that hot junction is separated, make the film substrate being similar to flexible PCB, then on this film substrate, P type thermoelectric film (26) is applied respectively, and N-type thermoelectric film (27), make cold, hot junction unit physical structure is separated, electrical resistance can completely thermoelectric semiconductor device component, thermoelectric device module is made after sintering, guard shield (31) is installed, and it is cold, the heat-conducting plate (32) in hot junction, (33) complete novel thermoelectricity semiconductor device is formed, see Figure 13.
Embodiment 2: see Figure 11, Figure 12, the conductive layer (29) of cool and heat ends is connected in series in the upper printing of the high temperature resistant thin base material (28) setting size, this film substrate applies P type or N-type thermoelectric material (thermoelectric material of choosing any one kind of them) film (30), form the separation of cool and heat ends module physical structure, electrical resistance can completely thermoelectric semiconductor device component, thermoelectric device module is made after sintering, guard shield (31) is installed, and the heat-conducting plate of cool and heat ends (32), (33), form complete novel thermoelectricity semiconductor device, see Figure 13.
Claims (10)
1. the invention provides a kind of brand-new thermoelectric semiconductor device adopting film fabrication techniques to be separated with hot junction by the cold junction of Conventional thermoelectric semiconductor device; It is characterized in that: between the hot junction forming thermoelectric semiconductor device essential characteristic and cold junction, increase by one section of electric path is also the mutual changeover portion of cold/hot temperature simultaneously, the cold junction of thermoelectric device unit and hot junction are separated, multiple thin film thermoelectric semiconductor unit is connected in series, the thin film thermoelectric semiconductor device that the cold junction of formation thermoelectric semiconductor device and the relative distance in hot junction physically can adjust arbitrarily simultaneously.
2. the thin film thermoelectric semiconductor device that is separated with hot junction of cold junction according to claim 1, it is characterized in that: adopt high-temperature resistant membrane as base material, resistant to elevated temperatures film substrate makes the conductive film in cold junction and hot junction respectively, as the electrical connection mechanism using P type and the series connection of N-type thermoelectric semiconductor material to make thin-film device simultaneously according to the distance of setting and structure.
3. the thin film thermoelectric semiconductor device that is separated with hot junction of cold junction according to claim 1, it is characterized in that: the conductive film connecting cold junction and hot junction on resistant to elevated temperatures film substrate according to the distance of setting and structure fabrication connected in electrical series, as the electrical connection mechanism using single P type or N-type thermoelectric semiconductor material to make thin film thermoelectric semiconductor device.
4. the thin film thermoelectric semiconductor device that is separated with hot junction of cold junction according to claim 1, is characterized in that: in the specific region of base material being coated with cold junction and hot junction conductive film, apply P type and N-type thermoelectric semiconductor material respectively by setting order.
5. the thin film thermoelectric semiconductor device that is separated with hot junction of cold junction according to claim 1, it is characterized in that: in the specific region being coated with connected in electrical series and connecting the base material of the conductive film in cold junction and hot junction, apply single P type or N-type thermoelectric semiconductor material by product design demand.
6. the thin film thermoelectric semiconductor device that is separated with hot junction of cold junction according to claim 1, it is characterized in that: production process is with series connection (electric and physical structure) form continuous seepage thermal electric film unit, and overall formation has the thermoelectric semiconductor device thin film component of the port electromotive force of industrial utility value.
7. the thin film thermoelectric semiconductor device that is separated with hot junction of cold junction according to claim 1, it is characterized in that: quantity-produced long strip type thermoelectric semiconductor thin film component is folded with specific specification, forms the thin film thermoelectric semiconductor apparatus assembly of suitable installation dimension.
8. the thin film thermoelectric semiconductor device that is separated with hot junction of cold junction according to claim 1, it is characterized in that: the thermoelectric semiconductor thin film component produced by setting specification is put so that multilayer (multiple thermoelectric semiconductor device thin film component) is stacked and is fixed, electrically connect with the form of parallel connection, form the thin film thermoelectric semiconductor apparatus assembly with the port electrical power of industrial utility value.
9. the thin film thermoelectric semiconductor device that is separated with hot junction of cold junction according to claim 1, is characterized in that: thin film thermoelectric semiconductor apparatus assembly will in vacuum or protective atmosphere sintering furnace pressure sintering curing molding.
10. the thin film thermoelectric semiconductor device that is separated with hot junction of cold junction according to claim 1, it is characterized in that: the thin film thermoelectric semiconductor apparatus assembly through sinter molding connects through internal electric, conducting-heat elements, shell encapsulation are installed, form complete thermoelectric device.
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Cited By (13)
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| CN106098925A (en) * | 2016-06-28 | 2016-11-09 | 杜效中 | A kind of ceramic membrane does the manufacture method of the thin film thermoelectric semiconductor device of base material |
| CN107332331A (en) * | 2017-08-28 | 2017-11-07 | 浙江科技学院（浙江中德科技促进中心） | Immersed tube tunnel pipeline section and power-economizing method in the native rock layers in the bottom with energy-conserving action |
| CN107732000A (en) * | 2017-10-23 | 2018-02-23 | 武汉理工大学 | Pressue device, thermoelectricity thick film and flexible thermo-electric device applied to thick film hot pressed sintering |
| CN107768510A (en) * | 2016-08-22 | 2018-03-06 | 中国科学院物理研究所 | A kind of electrothermal module and preparation method thereof |
| CN107846157A (en) * | 2017-10-11 | 2018-03-27 | 中国科学院上海硅酸盐研究所 | Temperature difference electricity generation device |
| CN108886084A (en) * | 2016-03-31 | 2018-11-23 | 株式会社村田制作所 | The manufacturing method of thermo-electric conversion module and thermo-electric conversion module |
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| CN110069084A (en) * | 2018-01-24 | 2019-07-30 | 思纳福(北京)医疗科技有限公司 | Temperature control device |
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| CN113594345A (en) * | 2021-06-23 | 2021-11-02 | 华为技术有限公司 | Thermoelectric submodule, thermoelectric device and wearable equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108886084A (en) * | 2016-03-31 | 2018-11-23 | 株式会社村田制作所 | The manufacturing method of thermo-electric conversion module and thermo-electric conversion module |
| CN106098925A (en) * | 2016-06-28 | 2016-11-09 | 杜效中 | A kind of ceramic membrane does the manufacture method of the thin film thermoelectric semiconductor device of base material |
| CN107768510A (en) * | 2016-08-22 | 2018-03-06 | 中国科学院物理研究所 | A kind of electrothermal module and preparation method thereof |
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| CN110501831A (en) * | 2019-08-14 | 2019-11-26 | 深圳市华星光电技术有限公司 | Backlight module and display device |
| CN111124003A (en) * | 2019-10-09 | 2020-05-08 | 珠海格力电器股份有限公司 | Cooling system and method for power module and computer readable storage medium |
| WO2021092987A1 (en) * | 2019-11-14 | 2021-05-20 | Tcl华星光电技术有限公司 | Backlight module and manufacturing method therefor |
| CN113659064A (en) * | 2020-05-12 | 2021-11-16 | 华为技术有限公司 | Thermoelectric device and thermoelectric apparatus |
| CN113594345A (en) * | 2021-06-23 | 2021-11-02 | 华为技术有限公司 | Thermoelectric submodule, thermoelectric device and wearable equipment |
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