CN105070813A - Large-power LED support and packaging method thereof - Google Patents
Large-power LED support and packaging method thereof Download PDFInfo
- Publication number
- CN105070813A CN105070813A CN201510550409.5A CN201510550409A CN105070813A CN 105070813 A CN105070813 A CN 105070813A CN 201510550409 A CN201510550409 A CN 201510550409A CN 105070813 A CN105070813 A CN 105070813A
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- Prior art keywords
- substrate
- copper coin
- support
- power led
- led chip
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- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 57
- 229910052802 copper Inorganic materials 0.000 claims abstract description 57
- 239000010949 copper Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000011347 resin Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 241000218202 Coptis Species 0.000 claims description 23
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 23
- 238000005538 encapsulation Methods 0.000 claims description 15
- 229920001296 polysiloxane Polymers 0.000 claims description 10
- 238000012856 packing Methods 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000003292 glue Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000009747 press moulding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a large-power LED support and a packaging method thereof. The support includes a copper plate and a substrate. The substrate is placed on the copper plate. The copper plate and the substrate are in pressed connection with each other. Two sides of the substrate are equipped with guide holes. A circuit of the copper plate and a circuit of the substrate are connected through the guide holes. An LED chip is mounted on the copper plate, and an electrode of the LED chip is connected to an electrode on the substrate. The LED chip and a gold wire are packaged by silicon resin, the silicon resin is shaped like a semi-circle and has effects of an optical lens, and a glass lens is disposed outside the silicon resin. The support exhibits high heat conduction, is reflective, and is small in size. Two packaging modes including dispensing and moulding are provided for packaging, and light, thin and small power-type packaging is achieved.
Description
Technical field
The present invention relates to LED technical field, relate to a kind of high-power LED bracket and method for packing thereof specifically.
Background technology
LED industry, towards realizing large-scale production, reduces costs, flexible design, and size is less, meets lightening, the high application trend that is integrated, small size of LED product and develops.
Along with the growth requirement of the increase of LED chip power, particularly solid state illumination technology, new, higher requirement is proposed to the optics of LED, calorifics, electricity and mechanical structure etc.In order to effectively reduce packaging thermal resistance, improving light extraction efficiency, brand-new technical thought must be adopted to carry out package design.
LED encapsulation structure of the prior art as shown in Figure 1, conventional great power LED is primarily of compositions such as support 17, LED chip 14, gold thread 16, packaging plastic 13, lens 11; Support 17 is made up of copper post 15, reverberation bowl cup 12, support pin, support bowl cup etc.; During encapsulation, chip is arranged in reflector, and gold thread need stride across reflector to connect chip and support pin, then protects chip gold thread in whole support bowl cup by packaging plastic.Package body sizes is large, not easily realizes large-scale production.
Summary of the invention
For deficiency of the prior art, the technical problem to be solved in the present invention there are provided a kind of high-power LED bracket and method for packing thereof, this support has high heat conduction, have reflection by and volume is little, there are a glue and mold pressing two kinds of packaged types during encapsulation, the encapsulation of frivolous small size power-type can be realized.
For solving the problems of the technologies described above, the present invention is realized by following scheme: a kind of high-power LED bracket, this support comprises copper coin, substrate, substrate is placed on copper coin, both link together in pressing, substrate both sides are provided with guide hole, described copper coin is connected by guide hole with the circuit of substrate, described LED chip is arranged on copper coin, its electrode is by the Electrode connection on gold thread and substrate, and described LED chip, gold thread are by silicone encapsulation, and described silicones is semicircle, play the effect of optical lens, described silicones outer setting has glass lens.
Further, described substrate is BT resin-based cladding plate.
Further, described substrate can use FR4 copper-clad plate to substitute.
Further, described copper plate thickness is 0.2mm, and substrate thickness is 0.3mm, and support integral thickness is 0.5mm.
Further, described support is the support of 350 ~ 450W/ (mK) conductive coefficient.
A method for packing for high-power LED bracket, the method comprises the following steps:
1), by copper coin undertaken dragging for groove, form the groove of a rule, the object of dragging for groove is the both positive and negative polarity in order to realize copper coin, uses organic resin to fill up groove after dragging for groove, object be both positive and negative polarity is realized electric insulation and bonding firmly;
2), to substrate pull reflector out, and get out the guide hole that substrate is connected with copper coin;
3), by substrate and copper coin laminating, after laminating, heavy copper plating is carried out to guide hole and connect with realizing circuit; Electrosilvering is carried out to copper coin surface, the oxidation of copper and the bright dipping of increase reflection raising packaging body during to prevent from encapsulating;
4), encapsulation time first LED chip is arranged on the copper coin at reflector center, pass through gold thread) realize LED chip and be connected with the circuit of substrate top electrode;
5), glass lens is encapsulated out by the LED chip in step 4);
6), encapsulated after again monoblock support is cut, cut into single material.
Further, the pad of described gold thread is at upper surface of base plate, and substrate pads position pulls two position of bonding wire again out, substrate no longer needs design pad circuit and the guide hole that is connected with copper coin, the direct and copper coin bonding of gold thread.
Relative to prior art, beneficial effect of the present invention is as follows:
1, the encapsulation of frivolous small size power-type is realized, copper plate thickness 0.2mm, substrate thickness 0.3mm, support integral thickness 0.5mm.
2, support can use a glue and mold pressing two kinds of method for packing.
3, support has high thermal conductivity, and conductive coefficient is at 350 ~ 400W/(mK).
4, great power LED reduced size encapsulation in realizing, low cost.
5, packaging body of the present invention needs when applying to adopt anti-subsides, and circuit board needs perforate, and LED light just can be made to shed.
6, the pad of gold thread is at BT upper surface of base plate, during encapsulation, bonding wire needs the span of gold thread larger, there is gold thread large usage quantity and the stable not problem of bank, therefore pull two position of bonding wire again out in substrate pads position, substrate no longer needs the guide hole designing the circuit such as pad and be connected with copper coin, directly and copper coin bonding, bank is lower can obtain stable bank to gold thread.
7. send out a support and there is high heat conduction, have reflection by and volume is little, encapsulation time point glue and mold pressing two kinds of packaged types; The encapsulation of frivolous small size power-type can be realized.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is traditional LED encapsulating structure schematic diagram.
Fig. 2 is high-power LED bracket structural representation of the present invention.
Fig. 3 is high-power LED encapsulation structure schematic diagram of the present invention.
Fig. 4 is that copper coin of the present invention drags for groove structural representation.
Fig. 5 is that reflector structural representation pulled out by BT substrate of the present invention.
Fig. 6 is BT substrate of the present invention and copper coin bonding structure schematic diagram.
Fig. 7 is LED chip circuit connection diagram of the present invention.
Fig. 8 is that the present invention encapsulates out glass lens structural representation.
Fig. 9 has cut monoblock support after the present invention has encapsulated again, cuts into single material schematic diagram.
Figure 10 is that the present invention pulls two position of bonding wire schematic diagrames out again in substrate pads position.
Figure 11 is that the present invention adopts press moulding mode mold pressing to go out lens colloid schematic diagram.
Mark in accompanying drawing: copper coin 2, substrate 3, guide hole 4, LED chip 5, gold thread 6, silicones 7.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail, can be easier to make advantages and features of the invention be readily appreciated by one skilled in the art, thus more explicit defining is made to protection scope of the present invention.
Please refer to accompanying drawing 2 ~ 3 one kinds of high-power LED brackets, this support comprises copper coin 2, substrate 3, substrate 3 is placed on copper coin 2, both link together in pressing, substrate 3 both sides are provided with guide hole 4, described copper coin 2 is connected by guide hole 4 with the circuit of substrate 3, described LED chip 5 is arranged on copper coin 2, its electrode is by gold thread 6 and the Electrode connection on substrate 3, described LED chip 5, gold thread 6 are encapsulated by silicones 7, described silicones 7 is in semicircle, and play the effect of optical lens, described silicones 7 outer setting has glass lens.Described substrate 3 is BT resin-based cladding plate, described substrate 3 can use FR4 copper-clad plate to substitute, and described copper coin 2 thickness is 0.2mm, and substrate 3 thickness is 0.3mm, support integral thickness is 0.5mm, and described support is the support of 350 ~ 450W/ (mK) conductive coefficient.
embodiment 1:
A method for packing for high-power LED bracket, the method comprises the following steps:
1, as shown in Figure 4, carried out dragging for groove by copper coin 2, form the groove 2-1 of a rule, the object of dragging for groove is the both positive and negative polarity in order to realize copper coin, uses organic resin to fill up groove 2-1 after dragging for groove, object be both positive and negative polarity is realized electric insulation and bonding firmly;
2, as shown in Figure 5, out reflector 3-1 is pulled to substrate 3, and get out the guide hole 4 that substrate 3 is connected with copper coin 2;
3, as shown in Figure 6, substrate 3 and copper coin 2 are fitted, after laminating, heavy copper plating is carried out to guide hole 4 and connect with realizing circuit; Electrosilvering is carried out to copper coin 2 surface, the oxidation of copper and the bright dipping of increase reflection raising packaging body during to prevent from encapsulating;
4, as shown in Figure 7, first LED chip 5 is arranged on the copper coin at reflector 3-1 center during encapsulation, realizes LED chip 5 by gold thread 6 and be connected with the circuit of substrate 3 top electrode;
5, as shown in Figure 8, glass lens 5-4 is encapsulated out by the LED chip 5 in step 4;
6, as shown in Figure 9, again monoblock support is cut after having encapsulated, cut into single material.
As shown in Figure 10, the pad of described gold thread 6 is surperficial on the substrate 3, and substrate 3 pad locations pulls two position of bonding wire again out, substrate no longer needs design pad circuit and the guide hole that is connected with copper coin, the direct and copper coin bonding of gold thread 6.
As shown in figure 11, the present invention adopts press moulding mode mold pressing to go out lens colloid, can form good light-out effect, also can realize encapsulation as used some glue mode.
The foregoing is only the preferred embodiment of the present invention; not thereby the scope of the claims of the present invention is limited; every utilize specification of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present invention.
Claims (7)
1. a high-power LED bracket, it is characterized in that: this support comprises copper coin (2), substrate (3), substrate (3) is placed on copper coin (2), both link together in pressing, substrate (3) both sides are provided with guide hole (4), described copper coin (2) is connected by guide hole (4) with the circuit of substrate (3), described LED chip (5) is arranged on copper coin (2), its electrode is by gold thread (6) and the Electrode connection on substrate (3), described LED chip (5), gold thread (6) is encapsulated by silicones (7), described silicones (7) is in semicircle, play the effect of optical lens, described silicones (7) outer setting has glass lens.
2. a kind of high-power LED bracket according to claim 1, is characterized in that: described substrate (3) is BT resin-based cladding plate.
3. a kind of high-power LED bracket according to claim 1, is characterized in that: described substrate (3) can use FR4 copper-clad plate to substitute.
4. a kind of high-power LED bracket according to claim 1, is characterized in that: described copper coin (2) thickness is 0.2mm, and substrate (3) thickness is 0.3mm, and support integral thickness is 0.5mm.
5. a kind of high-power LED bracket according to claim 1, is characterized in that: described support is the support of 350 ~ 450W/ (mK) conductive coefficient.
6. with a method for packing for high-power LED bracket according to claim 1, it is characterized in that, the method comprises the following steps:
1), copper coin (2) is carried out dragging for groove, form the groove (2-1) of a rule, the object of dragging for groove is the both positive and negative polarity in order to realize copper coin, uses organic resin to fill up groove (2-1) after dragging for groove, object be both positive and negative polarity is realized electric insulation and bonding firmly;
2), to substrate (3) pull reflector (3-1) out, and get out the guide hole (4) that substrate (3) is connected with copper coin (2);
3), by substrate (3) and copper coin (2) laminating, after laminating, heavy copper plating is carried out to guide hole (4) and connect with realizing circuit; Electrosilvering is carried out to copper coin (2) surface, the oxidation of copper and the bright dipping of increase reflection raising packaging body during to prevent from encapsulating;
4), encapsulation time first LED chip (5) is arranged on the copper coin at reflector (3-1) center, realize LED chip (5) by gold thread (6) and be connected with the circuit of substrate (3) top electrode;
5), glass lens (5-4) is encapsulated out by the LED chip (5) in step 4);
6), encapsulated after again monoblock support is cut, cut into single material.
7. the method for packing of high-power LED bracket according to claim 6, it is characterized in that: the pad of described gold thread (6) is at substrate (3) upper surface, substrate (3) pad locations pulls two position of bonding wire again out, substrate no longer needs design pad circuit and the guide hole that is connected with copper coin, the direct and copper coin bonding of gold thread (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510550409.5A CN105070813A (en) | 2015-09-01 | 2015-09-01 | Large-power LED support and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510550409.5A CN105070813A (en) | 2015-09-01 | 2015-09-01 | Large-power LED support and packaging method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105070813A true CN105070813A (en) | 2015-11-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510550409.5A Pending CN105070813A (en) | 2015-09-01 | 2015-09-01 | Large-power LED support and packaging method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105070813A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400219A (en) * | 2018-02-09 | 2018-08-14 | 永林电子有限公司 | A kind of holder molding bulb-shaped LED and preparation method thereof |
| CN109817797A (en) * | 2019-01-23 | 2019-05-28 | 佛山市国星光电股份有限公司 | LED component and lamp group array |
| CN111477733A (en) * | 2020-04-26 | 2020-07-31 | 深圳市环基实业有限公司 | Chip packaging method |
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| CN101663768A (en) * | 2007-10-15 | 2010-03-03 | 佛山市国星光电股份有限公司 | Power LED heat dissipation substrate structure and device manufactured by same |
| CN102354720A (en) * | 2011-10-26 | 2012-02-15 | 苏州东山精密制造股份有限公司 | LED (light-emitting diode) packaging method and LED packaging structure |
| CN202523755U (en) * | 2012-04-01 | 2012-11-07 | 广州大学 | Light emitting device having heat-electricity separated structure |
| CN204966534U (en) * | 2015-09-01 | 2016-01-13 | 宏齐光电子(深圳)有限公司 | High -power LED support |
-
2015
- 2015-09-01 CN CN201510550409.5A patent/CN105070813A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101663768A (en) * | 2007-10-15 | 2010-03-03 | 佛山市国星光电股份有限公司 | Power LED heat dissipation substrate structure and device manufactured by same |
| CN102354720A (en) * | 2011-10-26 | 2012-02-15 | 苏州东山精密制造股份有限公司 | LED (light-emitting diode) packaging method and LED packaging structure |
| CN202523755U (en) * | 2012-04-01 | 2012-11-07 | 广州大学 | Light emitting device having heat-electricity separated structure |
| CN204966534U (en) * | 2015-09-01 | 2016-01-13 | 宏齐光电子(深圳)有限公司 | High -power LED support |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400219A (en) * | 2018-02-09 | 2018-08-14 | 永林电子有限公司 | A kind of holder molding bulb-shaped LED and preparation method thereof |
| CN108400219B (en) * | 2018-02-09 | 2023-08-01 | 永林电子股份有限公司 | Bracket die-pressing ball-head type LED and preparation method thereof |
| CN109817797A (en) * | 2019-01-23 | 2019-05-28 | 佛山市国星光电股份有限公司 | LED component and lamp group array |
| CN111477733A (en) * | 2020-04-26 | 2020-07-31 | 深圳市环基实业有限公司 | Chip packaging method |
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Application publication date: 20151118 |