CN105036066A - Surface treatment method for protective cover of wafer level package - Google Patents
Surface treatment method for protective cover of wafer level package Download PDFInfo
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- CN105036066A CN105036066A CN201510412535.4A CN201510412535A CN105036066A CN 105036066 A CN105036066 A CN 105036066A CN 201510412535 A CN201510412535 A CN 201510412535A CN 105036066 A CN105036066 A CN 105036066A
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Abstract
The invention relates to a surface treatment method for a protective cover of a wafer level package. The method comprises the steps as follows: forming photoresist thin films at intervals on the protective cover, and forming a gap between every adjacent two photoresist thin films; bonding a wafer with the protective cover via supporting walls; performing back processing on the back surface of the wafer, i.e. the upper surface of the wafer, and using laser to perform stickiness-removing operation to bonding glue; and then taking off the protective cover, the photoresist thin films and the supporting walls. Through the addition of the coating processing procedure, the positions of the upper side of the cover corresponding to chip sensing areas are covered with the photoresist thin films, so that the photoresist thin films can effectively prevent the chip sensing areas from being damaged by laser during subsequent bonding removal processing with laser. The cover can be reused after the photoresist thin films are removed, and can be used as the cover of different products.
Description
Technical field
The present invention relates to a kind of surface treatment method of protection enclosure cover of wafer-level packaging, the invention belongs to technical field of semiconductor encapsulation.
Background technology
Wafer-level packaging generally will carry out interconnection technology to wafer back part; comprise thinning; grinding; the techniques such as etching and cutting; be easy to the front surface region injuring wafer, therefore before wafer-level packaging, first can be bonded in the front of wafer with the capping of one deck glass and so on; one is the effect playing protection wafer frontside, and two is for grinding below and cutting technique provide load effect.
But along with people are more and more stricter to the functional requirement of chip, for a lot of highly sensitive chip, how many this layer of cappings can have influence on normal ability to work.Such as after image sensor pixel is more than 5,000,000, Pixel Dimensions diminishes, and so just needs its photoresponse ability to strengthen, and now adds the fidelity ability that one deck glass capping then can have influence on chip outside.And for some MEMS sensor, adding one deck capping outside it can affect its susceptibility, especially for the sensor of gas sensing class, then capping can not be had completely to block.Therefore for wafer-level packaging, in the last flow process of encapsulation, crystal grain is made to be separated with capping the program that just necessitates.
Because capping is combined with wafer ephemeral key in the mode of playing glue, be separated this capping, the general laser class that adopts goes bonding operation to glue, utilizes the high-energy of laser to be interrupted by the chemical bond of glue, makes it lose adhesive power.But laser energy is very high, there is as imageing sensor and MEMS the chip of high sensitivity induction region, once its induction region is swept to by laser, the damage that cannot repair will be produced.Therefore, when removing bonding, the region that glue is played in capping wants through laser, normally can to remove bonding like this, and this capping simultaneously has for the induction region of chip the ability preventing laser light again.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of.
According to technical scheme provided by the invention, the surface treatment method of the protection enclosure cover of described a kind of wafer-level packaging comprises the following steps:
A1, do the photoresistance film be set in distance at the upper surface of protection enclosure cover, between adjacent two panels photoresistance film, form gap;
The upper surface of the protection enclosure cover in b1, gap between correspondence adjacent two panels photoresistance film makes knee wall;
C1, be coated with bonding glue on the wall top of knee wall, the wall top of the lower surface of wafer and knee wall is bonded together by bonding glue;
D1, finish back technique at the back side of wafer, carry out viscosity operation with laser para-linkage glue, then protection enclosure cover is taken off together with photoresistance film and knee wall.
According to technical scheme provided by the invention, the surface treatment method of the protection enclosure cover of described a kind of wafer-level packaging comprises the following steps:
A2, do the photoresistance film be set in distance at the upper surface of protection enclosure cover, between adjacent two panels photoresistance film, form gap;
B2, make the knee wall be set in distance at the lower surface of wafer;
C2, wall primary coat bonding glue at knee wall, be bonded together at the bottom of the upper surface of protection enclosure cover and the wall of knee wall by bonding glue, the upper surface bonding of the protection enclosure cover in the gap at the bottom of the wall of each knee wall and between corresponding adjacent two panels photoresistance film;
D2, finish back technique at the back side of wafer, carry out viscosity operation with laser para-linkage glue, protection enclosure cover is taken off together with photoresistance film, finally knee wall is removed.
According to technical scheme provided by the invention, the surface treatment method of the protection enclosure cover of described a kind of wafer-level packaging comprises the following steps:
A3, do the photoresistance film be set in distance at the lower surface of protection enclosure cover, between adjacent two panels photoresistance film, form gap;
Knee wall is made in the position in b3, gap between the corresponding adjacent two panels photoresistance film of the upper surface of protection enclosure cover;
C3, be coated with bonding glue on the wall top of knee wall, the wall top of the lower surface of wafer and knee wall is bonded together by bonding glue;
D3, finish back technique at the back side of wafer, carry out viscosity operation with laser para-linkage glue, then protection enclosure cover is taken off together with photoresistance film and knee wall.
According to technical scheme provided by the invention, the surface treatment method of the protection enclosure cover of described a kind of wafer-level packaging comprises the following steps:
A4, do the photoresistance film be set in distance at the lower surface of protection enclosure cover, between adjacent two panels photoresistance film, form gap;
B4, make the knee wall be set in distance at the lower surface of wafer;
C4, wall primary coat bonding glue at knee wall, be bonded together at the bottom of the upper surface of protection enclosure cover and the wall of knee wall by bonding glue, the upper surface bonding of the protection enclosure cover in the gap at the bottom of the wall of each knee wall and between corresponding adjacent two panels photoresistance film;
D4, finish back technique at the back side of wafer, carry out viscosity operation with laser para-linkage glue, protection enclosure cover is taken off together with photoresistance film, finally knee wall is removed.
As preferably: the thin slice of described protection enclosure cover to be the material can passed by laser be lucite, unorganic glass, resin, semi-conducting material, oxide crystal, pottery, metal, organic plastics, inorganic oxide or ceramic material, the thickness of protection enclosure cover is 100 ~ 500 μm.
As preferably: described photoresistance film is to stop that material that laser passes is the film of metal, photoresistance, glass, unorganic glass, resin, semi-conducting material, oxide crystal, pottery, metal, organic plastics, inorganic oxide or ceramic material, and the thickness of photoresistance film is 20 ~ 200 μm.
As preferably: described bonding glue is epoxy resin, organic silica gel, acidic glass glue or phenolic resins, the coating method of bonding glue is spraying, kiss-coating or plastic roll, the thickness of bonding glue is 10 ~ 100 μm, and the bonding pattern of bonding glue is thermocompression bonding or radiation mode bonding.
As preferably: described knee wall is the figure that positive photoresistance or negative photoresistance are produced by light blockage coating, exposure or developing process, the photoresistance line then solidify to form, described knee wall be individual layer or multilayer, the height of knee wall is at 10um ~ 200um.
As preferably: described knee wall is direct adhesion, the material of coating or deposition is the film of polyacrylate or polyisoprene rubber, the lines that this film is formed by gold-tinted and etching technics, and knee wall be individual layer or multilayer, the height of knee wall is at 10um ~ 200um.
The present invention makes the position of corresponding chip induction region above capping have photoresistance plastic film covering by increase by one coating process, when such post laser removes bonding, this layer of photoresistance film just can effectively prevent damage from laser from arriving chip induction region, can reuse after capping removes photoresistance film, and can use as the capping of different product.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below.Apparently, the accompanying drawing in the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the structure chart of the packaging body that in the embodiment of the present invention 1, step a1 obtains.
Fig. 2 is the structure chart of the packaging body that in the embodiment of the present invention 1, step b1 obtains.
Fig. 3 is the structure chart of the packaging body that in the embodiment of the present invention 1, step c1 obtains.
Fig. 4 is the structure chart of the packaging body that in the embodiment of the present invention 1, steps d 1 obtains.
Fig. 5 is the structure chart of the packaging body that in the embodiment of the present invention 2, step a2 obtains.
Fig. 6 is the structure chart of the packaging body that in the embodiment of the present invention 2, step b2 obtains.
Fig. 7 is the structure chart of the packaging body that in the embodiment of the present invention 2, step c2 obtains.
Fig. 8 is the structure chart of the packaging body that in the embodiment of the present invention 2, steps d 2 obtains.
Fig. 9 is the structure chart of the packaging body that in the embodiment of the present invention 3, step a3 obtains.
Figure 10 is the structure chart of the packaging body that in the embodiment of the present invention 3, step b3 obtains.
Figure 11 is the structure chart of the packaging body that in the embodiment of the present invention 3, step c3 obtains.
Figure 12 is the structure chart of the packaging body that in the embodiment of the present invention 3, steps d 3 obtains.
Figure 13 is the structure chart of the packaging body that in the embodiment of the present invention 4, step a4 obtains.
Figure 14 is the structure chart of the packaging body that in the embodiment of the present invention 4, step b4 obtains.
Figure 15 is the structure chart of the packaging body that in the embodiment of the present invention 4, step c4 obtains.
Figure 16 is the structure chart of the packaging body that in the embodiment of the present invention 4, steps d 4 obtains.
Detailed description of the invention
Below in conjunction with specific embodiment, the invention will be further described.
Describe the present invention below with reference to detailed description of the invention shown in the drawings.But these embodiments do not limit the present invention, the structure that those of ordinary skill in the art makes according to these embodiments, method or conversion functionally are all included in protection scope of the present invention.
In addition, label or the sign of repetition may be used in various embodiments.These repeat only clearly to describe the present invention in order to simple, do not represent between discussed different embodiment and/or structure and have any relevance.
The label had about step mentioned in the embodiments of the present invention, is only used to the convenience described, and does not have the contact of sequencing in fact.Different step in each detailed description of the invention, can carry out the combination of different sequencing, realize goal of the invention of the present invention.
Embodiment 1
A kind of surface treatment method of protection enclosure cover of wafer-level packaging comprises the following steps:
A1, to do at the upper surface of protection enclosure cover 1 between the photoresistance film 2 adjacent two panels photoresistance film 2 that is set in distance and form gap, the material of protection enclosure cover 1 is lucite and thickness is 100 μm, the material of photoresistance film 2 is unorganic glass and the thickness that thickness is photoresistance film is 20 μm, as shown in Figure 1;
The upper surface of the protection enclosure cover 1 in b1, gap between correspondence adjacent two panels photoresistance film 2 makes knee wall 3, the height of knee wall at 10um, as shown in Figure 2;
C1, be coated with bonding glue on the wall top of knee wall 3, bonding glue is epoxy resin, and the coating method of bonding glue is conventional spraying method, and the thickness of bonding glue is 10nm, the wall top of the lower surface of wafer 4 and knee wall 3 is bonded together with the thermocompression bonding of routine by bonding glue, as shown in Figure 3;
D1, finish back technique at the back side (i.e. the upper surface of wafer 4) of wafer 4, carry out viscosity operation with laser para-linkage glue, then protection enclosure cover 1 is taken off together with photoresistance film 2 and knee wall 3, as shown in Figure 4.
Embodiment 2
A kind of surface treatment method of protection enclosure cover of wafer-level packaging comprises the following steps:
A2, do the photoresistance film 2 be set in distance at the upper surface of protection enclosure cover 1, gap is formed between adjacent two panels photoresistance film 2, the material of protection enclosure cover 1 is unorganic glass and thickness is 100 μm, the material of photoresistance film 2 is organic plastics and the thickness that thickness is photoresistance film is 20 μm, as shown in Figure 5;
B2, make the knee wall 3 be set in distance at the lower surface of wafer 4, the height of knee wall at 70um, as shown in Figure 6;
C2, wall primary coat bonding glue at knee wall 3, bonding glue is organic silica gel, the coating method of bonding glue is conventional kiss-coating mode, the thickness of bonding glue is 100nm, by the upper surface of protection enclosure cover 1 at the bottom of the wall of knee wall 3 by bonding glue with together with the thermocompression bonding of routine, the upper surface bonding of the protection enclosure cover 1 in the gap at the bottom of the wall of each knee wall 3 and between corresponding adjacent two panels photoresistance film 2, as shown in Figure 7;
D2, finish back technique at the back side (i.e. the upper surface of wafer 4) of wafer 4, carry out viscosity operation with laser para-linkage glue, protection enclosure cover 1 is taken off together with photoresistance film 2, finally knee wall 3 is removed, as shown in Figure 8.
Embodiment 3
A kind of surface treatment method of protection enclosure cover of wafer-level packaging comprises the following steps:
A3, do the photoresistance film 2 be set in distance at the lower surface of protection enclosure cover 1, form gap between adjacent two panels photoresistance film 2, as shown in Figure 9;
Knee wall 3 is made in the position in b3, gap between the corresponding adjacent two panels photoresistance film 2 of the upper surface of protection enclosure cover 1, the height of knee wall at 140um, as shown in Figure 10;
C3, be coated with bonding glue on the wall top of knee wall 3, bonding glue is acidic glass glue, and the coating method of bonding glue is conventional plastic roll mode, and the thickness of bonding glue is 1 μm, the wall top of the lower surface of wafer 4 and knee wall 3 is bonded together with the radiation mode of routine by bonding glue, as shown in figure 11;
D3, finish back technique at the back side (i.e. the upper surface of wafer 4) of wafer 4, carry out viscosity operation with laser para-linkage glue, then protection enclosure cover 1 is taken off together with photoresistance film 2 and knee wall 3, as shown in figure 12.
Embodiment 4
A kind of surface treatment method of protection enclosure cover of wafer-level packaging comprises the following steps:
A4, do the photoresistance film 2 be set in distance at the lower surface of protection enclosure cover 1, form gap between adjacent two panels photoresistance film 2, as shown in figure 13;
B4, make the knee wall 3 be set in distance at the lower surface of wafer 4, as shown in figure 14;
C4, wall primary coat bonding glue at knee wall 3, bonding glue is phenolic resins, the height of knee wall is at 200um, the coating method of bonding glue is conventional plastic roll mode, the thickness of bonding glue is 100um, be bonded together at the bottom of the wall of the upper surface of protection enclosure cover 1 and knee wall 3 with the radiation mode of routine by bonding glue, the upper surface bonding of the protection enclosure cover 1 in the gap at the bottom of the wall of each knee wall 3 and between corresponding adjacent two panels photoresistance film 2, as shown in figure 15;
D4, finish back technique at the back side (i.e. the upper surface of wafer 4) of wafer 4, carry out viscosity operation with laser para-linkage glue, protection enclosure cover 1 is taken off together with photoresistance film 2, finally knee wall 3 is removed, as shown in figure 16.
In embodiment 1, embodiment 2, embodiment 3 and embodiment 4, the material of described protection enclosure cover 1 can be lucite, unorganic glass, resin, semi-conducting material, oxide crystal, pottery, metal, organic plastics, inorganic oxide, ceramic material etc.; This protection enclosure cover 1 can be transparent also can be opaque, can be the thin slice of one deck one matter composition, also can be the thin slice of multilayer same substance or different material composition; This protection enclosure cover 1 can be passed by laser;
In embodiment 1, embodiment 2, embodiment 3 and embodiment 4, the material of described photoresistance film 2 can be metal, photoresistance, glass, unorganic glass, resin, semi-conducting material, oxide crystal, pottery, metal, organic plastics, inorganic oxide, ceramic material etc.; Can be transparent also can be opaque, can be the film of one deck one matter composition, also can be the film of multilayer same substance or different material composition, and its effect stops that laser passes; This photoresistance film 2 can be removed; This photoresistance film 2 can be that first entirety is deposited in capping, and then logical overetched means remove and want the film of exposed area to realize, and also can be that serigraphy or direct adhesive tape are bonded in capping.
In embodiment 1, embodiment 2, embodiment 3 and embodiment 4, described bonding glue can be temperature-sensitive also can be photosensitive, this glue is by after heating, photon radiation, electron radiation, acoustic irradiation or other radiation mode effects, and its stickiness can reduce or disappear; If the remove photoresist process of glue below and can not affect sensor region after removing photoresist, this glue directly can also be coated on the wafer face that will bond, and light-resistance wall now also can be then simple one deck cushion, does not need etching for lines;
In embodiment 1, embodiment 2, embodiment 3 and embodiment 4, described knee wall 3 is figures that positive photoresistance or negative photoresistance are produced by light blockage coating, exposure or developing process, the photoresistance line then solidify to form.
In embodiment 1, embodiment 2, embodiment 3 and embodiment 4, described knee wall 3 also can be direct adhesion, the material of coating or deposition is the film of polyacrylate or polyisoprene rubber, the lines that this film is formed by gold-tinted and etching technics, and knee wall 3 be individual layer or multilayer, the height of knee wall 3 is at 10um ~ 200um.
In embodiment 1, embodiment 2, embodiment 3 and embodiment 4, described knee wall 3 be individual layer or multilayer, region corresponding to its lines is the Cutting Road of chip, surrounds every chips, with the photosensitive region in protect IC front; Because the impact of wall is not afraid of in chip non-photo-sensing region, therefore this wall width can be loosened to inside chip, is advisable not affect induction region; The height of knee wall 3 is at 10um ~ 200um.
Wafer 4 is image sensor, also can be the electronic component (electroniccomponents) comprising the integrated circuit such as active component or passive element (activeorpassiveelements), digital circuit or analog circuit (digitaloranalogcircuits), the functional chip of similar image sensor chip then comprises photoelectric cell (opticalelectronicdevices), MEMS (MicroElectroMechanicalSystem; MEMS), microfluid system (microfluidicsystems) or the physics sensor (PhysicalSensor) that utilizes the physical quantity variation such as heat, light and pressure to measure.Particularly can choice for use wafer-level packaging (waferscalepackage; WSP) processing procedure is to Image Sensor, light emitting diode (light-emittingdiodes; LEDs), solar cell (solarcells), RF component (RFcircuits), accelerometer (accelerators), gyroscope (gyroscopes), micro-brake (microactuators), surface acoustic wave element (surfaceacousticwavedevices), pressure sensor (processsensors) ink gun (inkprinterheads) or power die module (powerICmodule) etc.;
In the present invention, finish conventional back technique at the back side (i.e. the upper surface of wafer 4) of wafer 4, conventional back technique specifically comprises: the techniques such as TSV, RDL, BUMP or BGA.
Those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, can realize the present invention in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this description is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of description is only for clarity sake, those skilled in the art should by description integrally, and the technical scheme in each embodiment also through appropriately combined, can form other embodiments that it will be appreciated by those skilled in the art that.
Claims (9)
1. a surface treatment method for the protection enclosure cover of wafer-level packaging, is characterized in that this technique comprises the following steps:
A1, do the photoresistance film (2) be set in distance at the upper surface of protection enclosure cover (1), between adjacent two panels photoresistance film (2), form gap;
The upper surface of the protection enclosure cover (1) in b1, gap between correspondence adjacent two panels photoresistance film (2) makes knee wall (3);
C1, be coated with bonding glue on the wall top of knee wall (3), the wall top of the lower surface of wafer (4) and knee wall (3) is bonded together by bonding glue;
D1, finish back technique at the back side of wafer (4), carry out viscosity operation with laser para-linkage glue, then protection enclosure cover (1) is taken off together with photoresistance film (2) and knee wall (3).
2. a surface treatment method for the protection enclosure cover of wafer-level packaging, is characterized in that this technique comprises the following steps:
A2, do the photoresistance film (2) be set in distance at the upper surface of protection enclosure cover (1), between adjacent two panels photoresistance film (2), form gap;
B2, make the knee wall (3) be set in distance at the lower surface of wafer (4);
C2, wall primary coat bonding glue at knee wall (3), be bonded together at the bottom of the wall of the upper surface of protection enclosure cover (1) and knee wall (3) by bonding glue, the upper surface bonding of the protection enclosure cover (1) in the gap at the bottom of the wall of each knee wall (3) and between corresponding adjacent two panels photoresistance film (2);
D2, finish back technique at the back side of wafer (4), carry out viscosity operation with laser para-linkage glue, protection enclosure cover (1) is taken off together with photoresistance film (2), finally knee wall (3) is removed.
3. a surface treatment method for the protection enclosure cover of wafer-level packaging, is characterized in that this technique comprises the following steps:
A3, do the photoresistance film (2) be set in distance at the lower surface of protection enclosure cover (1), between adjacent two panels photoresistance film (2), form gap;
Knee wall (3) is made in the position in b3, gap between the corresponding adjacent two panels photoresistance film (2) of the upper surface of protection enclosure cover (1);
C3, be coated with bonding glue on the wall top of knee wall (3), the wall top of the lower surface of wafer (4) and knee wall (3) is bonded together by bonding glue;
D3, finish back technique at the back side of wafer (4), carry out viscosity operation with laser para-linkage glue, then protection enclosure cover (1) is taken off together with photoresistance film (2) and knee wall (3).
4. a surface treatment method for the protection enclosure cover of wafer-level packaging, is characterized in that this technique comprises the following steps:
A4, do the photoresistance film (2) be set in distance at the lower surface of protection enclosure cover (1), between adjacent two panels photoresistance film (2), form gap;
B4, make the knee wall (3) be set in distance at the lower surface of wafer (4);
C4, wall primary coat bonding glue at knee wall (3), be bonded together at the bottom of the wall of the upper surface of protection enclosure cover (1) and knee wall (3) by bonding glue, the upper surface bonding of the protection enclosure cover (1) in the gap at the bottom of the wall of each knee wall (3) and between corresponding adjacent two panels photoresistance film (2);
D4, finish back technique at the back side of wafer (4), carry out viscosity operation with laser para-linkage glue, protection enclosure cover (1) is taken off together with photoresistance film (2), finally knee wall (3) is removed.
5. the surface treatment method of the protection enclosure cover of a kind of wafer-level packaging according to claim 1,2,3 or 4; it is characterized in that: the thin slice of described protection enclosure cover (1) to be the material can passed by laser be lucite, unorganic glass, resin, semi-conducting material, oxide crystal, pottery, metal, organic plastics, inorganic oxide or ceramic material, the thickness of protection enclosure cover (1) is 100 ~ 500 μm.
6. the surface treatment method of the protection enclosure cover of a kind of wafer-level packaging according to claim 1,2,3 or 4; it is characterized in that: described photoresistance film (2) is to stop that material that laser passes is the film of metal, photoresistance, glass, unorganic glass, resin, semi-conducting material, oxide crystal, pottery, metal, organic plastics, inorganic oxide or ceramic material, and the thickness of photoresistance film (2) is 20 ~ 200 μm.
7. the surface treatment method of the protection enclosure cover of a kind of wafer-level packaging according to claim 1,2,3 or 4; it is characterized in that: described bonding glue is epoxy resin, organic silica gel, acidic glass glue or phenolic resins; the coating method of bonding glue is spraying, kiss-coating or plastic roll; the thickness of bonding glue is 10nm ~ 100um, and the bonding pattern of bonding glue is thermocompression bonding or radiation mode bonding.
8. the surface treatment method of the protection enclosure cover of a kind of wafer-level packaging according to claim 1,2,3 or 4; it is characterized in that: described knee wall (3) is the figure that positive photoresistance or negative photoresistance are produced by light blockage coating, exposure or developing process; then the photoresistance line solidify to form; and knee wall (3) is individual layer or multilayer, the height of knee wall (3) is at 10um ~ 200um.
9. the surface treatment method of the protection enclosure cover of a kind of wafer-level packaging according to claim 1,2,3 or 4; it is characterized in that: described knee wall (3) is direct adhesion, the material of coating or deposition is the film of polyacrylate or polyisoprene rubber; the lines that this film is formed by gold-tinted and etching technics; and knee wall (3) is individual layer or multilayer, the height of knee wall (3) is at 10um ~ 200um.
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| WO2018223391A1 (en) * | 2017-06-09 | 2018-12-13 | Goertek. Inc | Micro-led array transfer method, manufacturing method and display device |
| CN109273369A (en) * | 2017-07-17 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | Chip packaging method and chip-packaging structure |
| CN109273472A (en) * | 2018-09-21 | 2019-01-25 | 德淮半导体有限公司 | BSI imaging sensor and forming method thereof |
| CN110911293A (en) * | 2018-09-17 | 2020-03-24 | 上海新微技术研发中心有限公司 | Bonding structure and manufacturing method thereof |
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