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CN104974174A - Linear oligothiophene organic small-molecule semiconductor material - Google Patents

Linear oligothiophene organic small-molecule semiconductor material Download PDF

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CN104974174A
CN104974174A CN201410140242.0A CN201410140242A CN104974174A CN 104974174 A CN104974174 A CN 104974174A CN 201410140242 A CN201410140242 A CN 201410140242A CN 104974174 A CN104974174 A CN 104974174A
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CN104974174B (en
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王立磊
马昌期
管翔
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/12Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
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    • C07D487/00Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
    • C07D487/02Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains two hetero rings
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    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
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    • C07F7/0812Compounds with Si-C or Si-Si linkages comprising at least one atom selected from the elements N, O, halogen, S, Se or Te comprising a heterocyclic ring
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Abstract

本发明公开了一种有机小分子半导体材料,包含一Cor基团以及两个结构单元,其中每一结构单元包括一个FT基团,一个3,4-位由烷氧基或烷硫基修饰的噻吩单元和一个A基团,所述A基团依次经所述噻吩单元及所述FT基团与Cor基团连接,其中A基团为受电子基团单元,FT基团包括由1~12个修饰或未修饰噻吩组合形成的寡聚噻吩短链单元,Cor基团包括由两个以上的5或6元环并联形成的稠环π共轭单元或其衍生单元。本发明的有机小分子半导体材料具有小的光谱带隙,长的光谱吸收波长等优点,可以应用于有机半导体光电器件。

The invention discloses an organic small molecule semiconductor material, which includes a Cor group and two structural units, wherein each structural unit includes an FT group, and a 3,4-position modified by an alkoxy group or an alkylthio group. A thiophene unit and an A group, the A group is connected to the Cor group through the thiophene unit and the FT group in turn, wherein the A group is an electron-accepting group unit, and the FT group includes 1 to 12 An oligothiophene short-chain unit formed by combining two modified or unmodified thiophenes, and the Cor group includes a condensed ring π-conjugated unit formed by parallel connection of two or more 5- or 6-membered rings or a derivative unit thereof. The organic small molecular semiconductor material of the invention has the advantages of small spectral band gap, long spectral absorption wavelength and the like, and can be applied to organic semiconductor optoelectronic devices.

Description

一种线性寡聚噻吩有机小分子半导体材料A linear oligothiophene organic small molecule semiconductor material

技术领域technical field

本发明涉及一种有机小分子半导体材料,特别涉及一种线性寡聚噻吩有机小分子半导体材料,属于有机半导体材料领域。The invention relates to an organic small molecule semiconductor material, in particular to a linear oligothiophene organic small molecule semiconductor material, which belongs to the field of organic semiconductor materials.

背景技术Background technique

有机半导体材料具有质量轻、柔性好、生产成本低和易于大面积生产等优点成为近几年在研发领域及蓬勃兴起的有机电子产业中最引人注目和拥有巨大市场前景的新技术和新产品。Organic semiconductor materials have the advantages of light weight, good flexibility, low production cost, and easy large-scale production. They have become the most eye-catching new technologies and new products with huge market prospects in the field of research and development and the booming organic electronics industry in recent years. .

有机半导体材料主要有高分子有机材料和小分子有机材料两种。高分子材料由于是混合物,其结构不确定,分散性大,不易于纯化,容易造成材料批次间的差异。相比之下,有机小分子半导体材料由于结构单一确定,易于纯化,在实际应用中具有可重复性好等优势。Organic semiconductor materials mainly include high molecular organic materials and small molecular organic materials. Since the polymer material is a mixture, its structure is uncertain, the dispersion is large, it is not easy to purify, and it is easy to cause differences between material batches. In contrast, organic small molecule semiconductor materials have the advantages of simple and definite structure, easy purification, and good reproducibility in practical applications.

有机半导体材料的应用范围比较广泛,包括有机电致发光二极管(OLED)、有机场效应晶体管(OFET)、有机光伏电池(OPV)、化学传感器、有机半导体激光器等很多门类。值得一提的是寡聚噻吩衍生物小分子材料在有机半导体材料应用中占有极为重要的一席,主要是有机场效应晶体管(OFET)和有机光伏电池(OPV)的应用,尤其在近几年的研究中获得了丰硕的成果,有机光伏器件的光电转换率甚至超过了10%。Organic semiconductor materials have a wide range of applications, including organic electroluminescent diodes (OLEDs), organic field effect transistors (OFETs), organic photovoltaic cells (OPVs), chemical sensors, organic semiconductor lasers, and many other categories. It is worth mentioning that small molecule materials of oligothiophene derivatives play an extremely important role in the application of organic semiconductor materials, mainly in the application of organic field effect transistor (OFET) and organic photovoltaic cell (OPV), especially in recent years. Fruitful results have been obtained in the research, and the photoelectric conversion rate of organic photovoltaic devices even exceeds 10%.

通过对线性寡聚噻吩进行功能化修饰是构建高效有机小分子半导体的一种常见方法。目前线性寡聚噻吩的功能化修饰包括在线性寡聚噻吩中心引入具有给电子性的共轭单元以及在线性寡聚噻吩的两个α-端位引入两个电子受体单元等方法。这一方法可以使分子内形成电子给受体结构,实现降低材料的光谱带隙,红移材料的吸收光谱。但是,在线性寡聚噻吩共轭链长度较长的情况下,由于端位的受体单元与寡聚噻吩的共轭主体的中心距离被拉大,分子内电子给受体结构对降低材料的光谱带隙所起的作用变弱,材料的吸收光谱不能够得到进一步的红移,限制了这一方法在开发高效新材料上的应用。Functional modification of linear oligothiophenes is a common approach to construct efficient organic small molecule semiconductors. At present, the functional modification of linear oligothiophenes includes introducing electron-donating conjugated units at the center of linear oligothiophenes and introducing two electron acceptor units at the two α-terminal positions of linear oligothiophenes. This method can form an electron-donor-acceptor structure in the molecule, reduce the spectral band gap of the material, and red-shift the absorption spectrum of the material. However, when the length of the linear oligothiophene conjugated chain is longer, since the distance between the terminal acceptor unit and the conjugated body of the oligothiophene is enlarged, the intramolecular electron-donating-acceptor structure reduces the resistance of the material. The role played by the spectral band gap becomes weaker, and the absorption spectrum of the material cannot be further red-shifted, which limits the application of this method in the development of high-efficiency new materials.

发明内容Contents of the invention

针对现有技术中的不足,本发明的主要目的在于提供一种有机小分子半导体材料,其具有更低的光谱带隙和更长的光谱吸收波长。Aiming at the deficiencies in the prior art, the main purpose of the present invention is to provide an organic small molecule semiconductor material, which has a lower spectral band gap and a longer spectral absorption wavelength.

为实现上述目的,本发明采用的技术方案如下:To achieve the above object, the technical scheme adopted in the present invention is as follows:

一种有机小分子半导体材料,包含一Cor基团以及与该Cor基团连接的两个结构单元,每一结构单元包括一个FT基团,一个3,4-位由烷氧基或烷硫基修饰的噻吩单元和一个A基团,所述A基团依次经所述3,4-位由烷氧基或烷硫基修饰的噻吩单元及所述FT基团与Cor基团连接,An organic small molecule semiconductor material, comprising a Cor group and two structural units connected to the Cor group, each structural unit includes a FT group, a 3,4-position composed of alkoxy or alkylthio A modified thiophene unit and an A group, the A group is sequentially connected to the Cor group through the 3,4-position modified thiophene unit by alkoxy or alkylthio group and the FT group,

其中,A基团为受电子基团单元,FT基团包括由1~12个修饰或未修饰噻吩组合形成的寡聚噻吩短链单元,Cor基团包括由两个以上的5或6元环并联形成的稠环π共轭单元或其衍生单元,所述3,4-位由烷氧基或烷硫基修饰的噻吩单元具有如下结构式:Among them, the A group is an electron-accepting group unit, the FT group includes an oligothiophene short chain unit formed by combining 1 to 12 modified or unmodified thiophenes, and the Cor group includes two or more 5- or 6-membered rings. The condensed ring π-conjugated unit formed in parallel or its derivative unit, the thiophene unit modified by alkoxy or alkylthio at the 3,4-position has the following structural formula:

其中,X包括氧原子或者硫原子,R1、R2包括取代或未取代的C1~C20的烷基或C1~C20的杂烷基。Wherein, X includes an oxygen atom or a sulfur atom, and R 1 and R 2 include a substituted or unsubstituted C1-C20 alkyl group or a C1-C20 heteroalkyl group.

进一步的,该有机小分子半导体材料的结构式可参考图1。Further, the structural formula of the small organic molecule semiconductor material can refer to FIG. 1 .

进一步的,在所述3,4-位由烷氧基或烷硫基修饰的噻吩单元中,R1与R2之间相互连接,并与连接在噻吩环的3,4-位上的两个氧或硫原子及噻吩环上的邻近C-C键形成5~8元取代或未取代的环状结构。Further, in the thiophene unit modified by alkoxy or alkylthio at the 3,4-position, R 1 and R 2 are connected to each other, and connected to the 3,4-position of the thiophene ring. An oxygen or sulfur atom and adjacent CC bonds on the thiophene ring form a 5- to 8-membered substituted or unsubstituted ring structure.

与现有技术相比,本发明至少具有如下优点:该有机半导体分子中线性噻吩的对称的两个端位是由一个受电子基团单元以及与之直接相连3,4-位由烷氧基或烷硫基修饰的噻吩单元组成的复合单元,通过将受电子基团A与给电子能力强的3,4-位由烷氧基或烷硫基修饰的噻吩单元直接相连,使得电子给受体单元间的距离缩短到最小,最大程度地发挥受电子基团单元的作用。在此基础上,通过引入线性共轭寡聚噻吩短链(FT)及功能共轭核心单元(Cor),可以进一步调节修饰线性寡聚噻吩单元的光谱带隙及吸收光谱,更有利于材料在有机半导体器件上的应用效能。Compared with the prior art, the present invention has at least the following advantages: the symmetrical two terminal positions of the linear thiophene in the organic semiconductor molecule are formed by an electron-accepting group unit and directly connected with the 3,4-position by an alkoxy group Or a compound unit composed of an alkylthio-modified thiophene unit, by directly connecting the electron-accepting group A with the 3,4-position of alkoxy or alkylthio-modified thiophene unit with strong electron-donating ability, so that the electron donating and accepting The distance between the body units is shortened to the minimum, and the role of the electron-accepting group unit is maximized. On this basis, by introducing a linear conjugated oligothiophene short chain (FT) and a functional conjugated core unit (Cor), the spectral band gap and absorption spectrum of the modified linear oligothiophene unit can be further adjusted, which is more conducive to the material in the Application performance on organic semiconductor devices.

附图说明Description of drawings

图1-1是本发明有机小分子半导体材料的结构式;Fig. 1-1 is the structural formula of organic small molecule semiconductor material of the present invention;

图1-2是本发明有机小分子半导体材料中的一种环形结构的结构式;Fig. 1-2 is the structural formula of a kind of annular structure in organic small molecule semiconductor material of the present invention;

图2-1至图2-10是本发明的一些示例化合物的分子结构式;Figure 2-1 to Figure 2-10 are the molecular structural formulas of some exemplary compounds of the present invention;

图3a~图3b是本发明中两个结构相互对比的寡聚噻吩有机半导体分子H与J的分子结构式;Figures 3a to 3b are the molecular structural formulas of the two oligothiophene organic semiconductor molecules H and J whose structures are compared with each other in the present invention;

图4是图3a-图3b所示寡聚噻吩有机半导体分子H与J的吸收光谱;Fig. 4 is the absorption spectrum of oligothiophene organic semiconductor molecules H and J shown in Fig. 3a-Fig. 3b;

图5-图10分别是本发明实施例1-6的合成工艺路线图。Fig. 5-Fig. 10 are the synthesis process roadmaps of Examples 1-6 of the present invention respectively.

具体实施方式Detailed ways

鉴于现有技术的前述缺陷,本案发明人经大量研究和实践,通过将具有强给电子性能的3,4-位由烷氧基或烷硫基修饰的噻吩单元直接与一个受电子基团单元相连形成的复合单元作为线性噻吩的两个端位基团,进而构建了一种新型的有机半导体分子,其能够减小分子内电子受体基团单元与电子给体基团单元之间的距离,增强分子内的电荷分离程度,从而实现红移寡聚噻吩有机小分子半导体材料的吸收光谱,降低了材料的光谱带隙。In view of the foregoing defects of the prior art, the inventors of the present case have conducted a lot of research and practice, by directly combining a thiophene unit modified by an alkoxy group or an alkylthio group at the 3,4-position with strong electron-donating properties with an electron-accepting group unit The compound units formed by connecting are used as the two terminal groups of linear thiophene, and then a new type of organic semiconductor molecule is constructed, which can reduce the distance between the electron acceptor group unit and the electron donor group unit in the molecule , to enhance the degree of charge separation in the molecule, thereby realizing the absorption spectrum of the red-shifted oligothiophene organic small molecule semiconductor material, and reducing the spectral band gap of the material.

具体而言,本发明的有机小分子半导体材料具有图1所示分子结构结构式,其中,X包括氧原子或者硫原子,A为受电子基团单元,FT包括由1~12个修饰或未修饰噻吩组合形成的寡聚噻吩短链单元,Cor包括由两个以上的5或6元环并联形成的稠环π共轭单元或其衍生单元,R1、R2包括取代或未取代的C1~C20的烷基或C1~C20的杂烷基。Specifically, the organic small molecule semiconductor material of the present invention has the molecular structural formula shown in Figure 1, wherein, X includes an oxygen atom or a sulfur atom, A is an electron-accepting group unit, and FT includes 1 to 12 modified or unmodified The oligothiophene short chain unit formed by the combination of thiophenes, Cor includes condensed ring π-conjugated units formed by parallel connection of two or more 5- or 6-membered rings or its derivative units, R 1 and R 2 include substituted or unsubstituted C1~ A C20 alkyl group or a C1-C20 heteroalkyl group.

在本发明的技术方案中,其一个方面是将具有强给电子性能的3,4-位由烷氧基或烷硫基修饰的噻吩单元直接与电子受体单元A连接,形成端位修饰基团。In the technical scheme of the present invention, one aspect thereof is to directly link the 3,4-position thiophene units modified by alkoxy or alkylthio groups with strong electron-donating properties to the electron acceptor unit A to form a terminal modification group group.

在本发明的一个实施方案中,可以在所述3,4-位由烷氧基或烷硫基修饰的噻吩单元中,R1与R2之间相互连接,并与连接在噻吩环的3,4-位上的两个氧或硫原子及噻吩环上的邻近C-C键形成5~8元取代或未取代的环状结构。In one embodiment of the present invention, in the thiophene unit modified by alkoxy or alkylthio group at the 3,4-position, R 1 and R 2 are connected to each other, and connected to 3 in the thiophene ring , Two oxygen or sulfur atoms at the 4-position and adjacent CC bonds on the thiophene ring form a 5-8 membered or unsubstituted ring structure.

进一步的,所述环状结构包括一噻吩单元,且修饰于该噻吩单元的3,4-位的氧和/或硫原子之间连接有至少一分子碎片,所述分子碎片包括-CH2-CH2-。Further, the ring structure includes a thiophene unit, and at least one molecular fragment is connected between the oxygen and/or sulfur atoms modified at the 3,4-position of the thiophene unit, and the molecular fragment includes -CH 2 - CH2- .

更为具体的,所述环状结构可以具有图1-2所示结构式,其中,X为氧原子和/或硫原子,-Y-为分子碎片,该分子碎片包括-CH2-CH2-。More specifically, the ring structure may have the structural formula shown in Figure 1-2, wherein X is an oxygen atom and/or a sulfur atom, -Y- is a molecular fragment, and the molecular fragment includes -CH 2 -CH 2 - .

进一步的,本发明中具有强给电子性能3,4-位由烷氧基或烷硫基修饰的噻吩单元包括以下两类:Further, the thiophene units modified by alkoxy or alkylthio groups at the 3,4-position with strong electron-donating properties in the present invention include the following two types:

(1)3,4-二位的取代修饰基团之间没有发生交叉连接,形成两个独立的取代基团。其中的修饰单元R1和R2在各种情况下独立地选自取代或未取代的C1~C20的烷基或C1~C20的杂烷基。R1和R2在原则上可以相同,也可以不相同。但在本发明过程中,实际选用具有相同结构的修饰单元。本发明所提供的解决方案中,R1和R2修饰单元结构的调整可以进一步调节材料的溶解性能,提高材料在器件制备过程中的应用效果。以下是本发明所公开的解决方案中应用的一些修饰单元,但本发明所提供的解决方案并不局限与下列单元。(1) There is no cross-connection between the 3,4-position substituting modification groups, forming two independent substituting groups. The modification units R 1 and R 2 are independently selected from substituted or unsubstituted C1-C20 alkyl groups or C1-C20 heteroalkyl groups in each case. R 1 and R 2 may or may not be the same in principle. However, in the process of the present invention, modifying units having the same structure are actually selected. In the solution provided by the present invention, the adjustment of the structure of the R1 and R2 modification units can further adjust the solubility of the material and improve the application effect of the material in the device preparation process. The following are some modified units used in the solutions disclosed by the present invention, but the solutions provided by the present invention are not limited to the following units.

(2)3,4-二位的取代修饰基团R1与R2之间相互连接,并与3,4-位上的两个氧或硫原子及与邻近的噻吩环上的C-C键形成5~8元取代或未取代的环状结构。为了进一步说明本发明单元的结构,下面列举其中的一些实例,但本发明所涉及的修饰结构中并不局限于下列结构单元:(2) The 3,4-position substituted modification groups R1 and R2 are connected to each other, and form a 5~ 8-membered substituted or unsubstituted ring structures. In order to further illustrate the structure of the units of the present invention, some examples are enumerated below, but the modified structures involved in the present invention are not limited to the following structural units:

本发明所提供的上述技术方案中,5~8元环上的取代修饰基团的修改可以进一步调整材料的溶解性能,提高材料在器件制备过程中的应用效果。In the above technical solution provided by the present invention, the modification of the substituting modification groups on the 5-8 membered ring can further adjust the solubility of the material and improve the application effect of the material in the device preparation process.

为了实现进一步突显本发明的效果,本发明还选取了一个受电子基团单元,并与上述3,4-位由烷氧基或烷硫基修饰的噻吩单元直接相连。受电子基团单元的选择主要从受电子能力、材料的溶解性能等两个关键因素。本发明的解决方案中,受电子单元可以具有但不局限于以下结构:In order to further highlight the effect of the present invention, the present invention also selects an electron-accepting group unit, which is directly connected to the above-mentioned thiophene unit modified by alkoxy or alkylthio at the 3,4-position. The selection of the electron-accepting group unit is mainly based on two key factors: the electron-accepting ability and the solubility of the material. In the solution of the present invention, the electron receiving unit can have but not limited to the following structure:

其中,R3包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基。Wherein, R 3 includes hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl.

较为优选的,A具有下列结构式中的任一种:More preferably, A has any one of the following structural formulas:

其中,R3包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基。Wherein, R 3 includes hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl.

为了增加分子的共轭程度,在本发明技术方案中还可通过引入寡聚噻吩短链共轭单元(FT)来调节材料分子的共轭度。在系列的噻吩短链共轭单元中,还可以通过引入取代或未取代的C1~C20的烷基或C1~C20的杂烷取代基单元进一步调节材料的溶解性能,提高材料在器件制备过程中的应用效果。In order to increase the degree of conjugation of molecules, in the technical solution of the present invention, the degree of conjugation of material molecules can also be adjusted by introducing oligothiophene short-chain conjugation units (FT). In the series of thiophene short-chain conjugated units, it is also possible to further adjust the solubility of the material by introducing substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkane substituent units, and improve the material in the device preparation process. application effect.

所述的寡聚噻吩短链共轭单元(FT)至少具有下列结构式中的任意一种:The oligothiophene short-chain conjugate unit (FT) has at least any one of the following structural formulas:

其中,R4、R5、R6包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基,m、n为0~2的整数,且m、n不能同时为0,r为1或2,R7、R8其中一个为氢,另一个为取代或未取代的C1~C20的烷基或C1~C20的杂烷基,q为1~12之间的任意一个整数。Among them, R 4 , R 5 , and R 6 include hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl, m and n are integers from 0 to 2, and m and n cannot be 0, r is 1 or 2, one of R 7 and R 8 is hydrogen, the other is substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl, q is any between 1-12 an integer.

进一步地,FT至少具有如下结构式中的任一种:Further, FT has at least any one of the following structural formulas:

其中,R9包括取代或未取代的C1~C20的烷基或C1~C20的杂烷基,R10包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基。Wherein, R 9 includes substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl, R 10 includes hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl.

为了进一步说明本发明单元的结构,下面列举其中的一些实施例,但本发明所涉及的修饰结构中并不局限于下列结构单元:In order to further illustrate the structure of the unit of the present invention, some examples thereof are enumerated below, but the modified structures involved in the present invention are not limited to the following structural units:

1.具有中心对称结构的寡聚噻吩短链共轭单元:1. Oligothiophene short-chain conjugated unit with centrosymmetric structure:

其中t为1~12中的一个确定的整数。Wherein t is a definite integer from 1 to 12.

2.具有规整结构的寡聚噻吩短链共轭单元:2. Oligothiophene short-chain conjugated unit with regular structure:

为了更进一步地对材料的光谱带隙及材料吸收光谱性能进行调节,在本发明的技术方案中,还在线性寡聚噻吩单元的核心引入π共轭功能单元Cor,其中Cor包括由两个及以上的5或6元环并联形成的稠环π共轭单元或其衍生单元。In order to further adjust the spectral band gap and material absorption spectrum performance of the material, in the technical solution of the present invention, the core of the linear oligothiophene unit is also introduced into the π-conjugated functional unit Cor, wherein Cor includes two and A condensed ring π-conjugated unit formed by parallel connection of the above 5 or 6-membered rings or a derivative unit thereof.

下面列举其中的一些实施例,但本发明所涉及的修饰结构中并不局限于下列结构单元:List some of them below, but the modified structures involved in the present invention are not limited to the following structural units:

其中,X1、X2、X3独立地选自O、S、Se、Si、N、C等原子中的任一者及与该者附属连接的C1~C20的烷基或C1~C20的杂烷基,R11包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基。k为1~6的一个确定的整数。Among them, X 1 , X 2 , and X 3 are independently selected from any one of atoms such as O, S, Se, Si, N, and C, and the C1-C20 alkyl or C1-C20 Heteroalkyl, R 11 includes hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl. k is a definite integer of 1-6.

较为优选的,Cor具有如下结构式中的任一种:More preferably, Cor has any one of the following structural formulas:

其中,R12包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基。Wherein, R 12 includes hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl.

进一步的,根据本发明提供的技术方案,下面列举本发明的一些示例化合物分子结构式(请参阅图2-1至图2-10)以及其中一些关键化合物的制备方案。所列举的化合物仅作为本发明技术方案的一种详细说明,不可解析为限定本发明的设计思想。Furthermore, according to the technical scheme provided by the present invention, the molecular structural formulas of some exemplary compounds of the present invention (please refer to Figure 2-1 to Figure 2-10) and the preparation schemes of some key compounds are listed below. The listed compounds are only used as a detailed description of the technical solution of the present invention, and cannot be interpreted as limiting the design concept of the present invention.

为了说明本发明方案的技术优势,本发明还提供了两个结构相互对比的寡聚噻吩有机半导体分子H与J,请参阅图3a-图3b,其中J对应其端位不具有EDOT结构的化合物;H对应其端位具有EDOT结构的化合物。In order to illustrate the technical advantages of the scheme of the present invention, the present invention also provides two oligothiophene organic semiconductor molecules H and J whose structures are compared with each other, please refer to Figure 3a-Figure 3b, wherein J corresponds to a compound that does not have an EDOT structure at its end ; H corresponds to a compound having an EDOT structure at its end.

采用紫外-可见吸收光谱法(UV-vis)测试,其中测试波长范围300nm~800nm,用重蒸的氯仿溶剂将H、J两种材料分别配制成浓度约为1×10-6mol/L的氯仿溶液进行测定,其吸收光谱图请参阅图4,可以看出:端基修饰EDOT的化合物H明显优于端基未修饰EDOT的化合物J。H与J相比,最大吸收峰由492nm红移至525nm,红移了33nm;且H的最大吸收峰处的摩尔吸光系数为8.79×104Lmol-1cm-1,J的最大吸收峰处的摩尔吸光系数为6.98×104L mol-1cm-1,由此可见,在端基引入EDOT结构后,吸光能力得到明显提高。本发明所涉及的这一类有机半导体小分子具有更低的光谱带隙和更长的光谱吸收波长。Ultraviolet-visible absorption spectroscopy (UV-vis) is used for testing, and the testing wavelength range is 300nm to 800nm. The two materials H and J are respectively prepared with a concentration of about 1×10 -6 mol/L with redistilled chloroform solvent. Chloroform solution is measured, and its absorption spectrogram please refer to Fig. 4, can find out: the compound H of end group modified EDOT is obviously better than the compound J of end group unmodified EDOT. Compared with J, the maximum absorption peak of H is red-shifted from 492nm to 525nm, red-shifted by 33nm; and the molar absorptivity at the maximum absorption peak of H is 8.79×10 4 Lmol -1 cm -1 , and at the maximum absorption peak of J The molar absorptivity coefficient of the compound is 6.98×10 4 L mol -1 cm -1 , which shows that after the end group is introduced into the EDOT structure, the light absorptivity is significantly improved. The organic semiconductor small molecule involved in the present invention has a lower spectral band gap and a longer spectral absorption wavelength.

下面结合若干较佳实施例对本发明的合成制备技术方案做进一步详细的说明。The synthesis and preparation technical scheme of the present invention will be described in further detail below in conjunction with several preferred embodiments.

实施例1该有机小分子半导体材料的合成制备工艺可以为:Embodiment 1 The synthesis and preparation process of the organic small molecule semiconductor material can be:

无水无氧条件下25mL单口瓶中加入A(0.26g,0.29mmol),四(三苯基磷)钯(33mg,28.7μmol),B(0.26g,0.63mmol),DMF(2mL),在80℃下反应20小时,反应完毕,用甲醇沉淀,收集固体,柱层析法提纯,得到最终产品C(0.25g),收率70%。该产品C的表征数据如下:Add A (0.26g, 0.29mmol), tetrakis(triphenylphosphine)palladium (33mg, 28.7μmol), B (0.26g, 0.63mmol), DMF (2mL) into a 25mL single-necked bottle under anhydrous and oxygen-free conditions. The reaction was carried out at 80°C for 20 hours. After the reaction was completed, the solid was collected by precipitation with methanol and purified by column chromatography to obtain the final product C (0.25 g). The yield was 70%. The characterization data of this product C are as follows:

MS(MALDI-TOF):Calcd,1246.36;Found,1246.40。MS (MALDI-TOF): Calcd, 1246.36; Found, 1246.40.

1H NMR(CDCl3,400MHz):δ=9.91(s,2H),δ=7.68(s,2H),δ=7.34(d,2H),δ=7.26(s,2H),δ=6.92(d,2H),δ=4.43(s,8H),δ=2.89~2.83(m,8H),1.72~1.63(m,6H),1.45~1.26(m,28H),0.98~0.86(m,18H)。 1 H NMR (CDCl 3 , 400MHz): δ=9.91(s,2H), δ=7.68(s,2H), δ=7.34(d,2H), δ=7.26(s,2H), δ=6.92( d,2H),δ=4.43(s,8H),δ=2.89~2.83(m,8H),1.72~1.63(m,6H),1.45~1.26(m,28H),0.98~0.86(m,18H ).

本实施例的合成路线请参阅图5。Please refer to Figure 5 for the synthetic route of this example.

实施例2该有机小分子半导体材料的合成制备工艺可以为:Embodiment 2 The synthesis and preparation process of the organic small molecule semiconductor material can be:

50mL单口瓶中加入C(0.20g,0.16mmol),3-乙基-2-硫代-4-噻唑烷二酮(57mg,0.35mmol),5滴哌啶,15mL干燥氯仿,回流4h,水与氯仿互萃,有机相干燥,过滤,旋干溶剂,用甲醇沉淀,收集固体,柱层析法提纯,得到目标产物D(0.19g),收率76%。。该产品D的表征数据如下:Add C (0.20g, 0.16mmol), 3-ethyl-2-thio-4-thiazolidinedione (57mg, 0.35mmol), 5 drops of piperidine, 15mL dry chloroform, reflux for 4h, water Interextracted with chloroform, dried the organic phase, filtered, spin-dried the solvent, precipitated with methanol, collected the solid, and purified by column chromatography to obtain the target product D (0.19g), with a yield of 76%. . The characterization data of this product D are as follows:

MS(MALDI-TOF):Calcd,1532.33;Found,1532.12。MS (MALDI-TOF): Calcd, 1532.33; Found, 1532.12.

1H NMR(CDCl3,400MHz):δ=7.90~7.70(s,2H),δ=7.70~7.50(s,2H),δ=7.50~7.30(d,2H),δ=7.30~7.10(s,2H),δ=7.10~6.85(d,2H),δ=4.50~4.30(s,8H),δ=4.30~4.10(q,4H),δ=2.90~2.80(m,8H),1.80~1.60(m,6H),1.50~1.20(m,28H),1.00~0.80(m,24H)。 1 H NMR (CDCl 3 , 400MHz): δ=7.90~7.70(s,2H), δ=7.70~7.50(s,2H), δ=7.50~7.30(d,2H), δ=7.30~7.10(s ,2H),δ=7.10~6.85(d,2H),δ=4.50~4.30(s,8H),δ=4.30~4.10(q,4H),δ=2.90~2.80(m,8H),1.80~ 1.60(m,6H), 1.50~1.20(m,28H), 1.00~0.80(m,24H).

本实施例的合成路线请参阅图6。Please refer to Figure 6 for the synthetic route of this example.

实施例3该有机小分子半导体材料的合成制备工艺可以为:Embodiment 3 The synthesis and preparation process of the organic small molecule semiconductor material can be:

50mL单口瓶中加入B(0.43g,1.03mmol),丙二腈(0.14g,2.06mmol),5滴哌啶,10mL干燥氯仿,回流4h,水与氯仿互萃,有机相干燥,过滤,旋干溶剂,用乙醇重结晶,得到最终产品E(0.40g),收率83%。该产品E的表征数据如下:Add B (0.43g, 1.03mmol), malononitrile (0.14g, 2.06mmol), 5 drops of piperidine, 10mL dry chloroform into a 50mL single-necked bottle, reflux for 4h, inter-extract water and chloroform, dry the organic phase, filter, spin Dry the solvent and recrystallize from ethanol to obtain the final product E (0.40g), with a yield of 83%. The characterization data for this product E are as follows:

MS(MALDI-TOF):Calcd,462.01;Found,461.95。MS (MALDI-TOF): Calcd, 462.01; Found, 461.95.

1H NMR(CDCl3,400MHz):δ=7.84(s,1H),δ=7.15(s,1H),δ=4.45~4.41(m,4H),δ=2.56(t,2H),1.62~1.55(m,2H),1.37~1.33(m,6H),0.90(t,3H)。 1 H NMR(CDCl 3 ,400MHz):δ=7.84(s,1H),δ=7.15(s,1H),δ=4.45~4.41(m,4H),δ=2.56(t,2H),1.62~ 1.55 (m, 2H), 1.37~1.33 (m, 6H), 0.90 (t, 3H).

本实施例的合成路线请参阅图7。Please refer to Figure 7 for the synthetic route of this example.

实施例4该有机小分子半导体材料的合成制备工艺可以为:Embodiment 4 The synthesis and preparation process of the organic small molecule semiconductor material can be:

无水无氧条件下25mL单口瓶中加入A(0.13g,0.16mmol),四(三苯基磷)钯(19mg,16.4μmol),E(0.16g,0.35mmol),DMF(5mL),在80℃下反应20小时,反应完毕,用甲醇沉淀,收集固体,柱层析法提纯,得到最终产品F(0.25g),收率90%。该产品F的表征数据如下:Add A (0.13g, 0.16mmol), tetrakis(triphenylphosphine)palladium (19mg, 16.4μmol), E (0.16g, 0.35mmol), DMF (5mL) into a 25mL single-necked bottle under anhydrous and oxygen-free conditions, in The reaction was carried out at 80°C for 20 hours. After the reaction was completed, the solid was collected by precipitation with methanol and purified by column chromatography to obtain the final product F (0.25 g), with a yield of 90%. The characterization data of this product F are as follows:

MS(MALDI-TOF):Calcd,1210.39;Found,1210.13。MS (MALDI-TOF): Calcd, 1210.39; Found, 1210.13.

1H NMR(CDCl3,400MHz):δ=7.83(s,2H),δ=7.49(s,2H),δ=7.36(s,2H),δ=4.47(s,8H),δ=4.21(d,4H),δ=2.89(t,4H),1.86~1.80(m,2H),1.71~1.52(m,12H),1.45~1.37(m,12H),1.35~1.31(m,8H),1.04(t,6H),0.95(t,6H),0.89(t,6H)。 1 H NMR (CDCl 3 , 400MHz): δ=7.83(s,2H), δ=7.49(s,2H), δ=7.36(s,2H), δ=4.47(s,8H), δ=4.21( d,4H), δ=2.89(t,4H), 1.86~1.80(m,2H), 1.71~1.52(m,12H), 1.45~1.37(m,12H), 1.35~1.31(m,8H), 1.04(t,6H),0.95(t,6H),0.89(t,6H).

本实施例的合成路线请参阅图8。Please refer to Figure 8 for the synthetic route of this example.

实施例5该有机小分子半导体材料的合成制备工艺可以为:Embodiment 5 The synthesis and preparation process of the organic small molecule semiconductor material can be:

50mL单口瓶中加入B(0.46g,1.10mmol),氰基乙酸正辛酯(0.33g,1.67mmol),5滴哌啶,10mL干燥氯仿,回流4h,水与氯仿互萃,有机相干燥,过滤,旋干溶剂,用乙醇重结晶,得到最终产品G(0.47g),收率72%。该产品G的表征数据如下:Add B (0.46g, 1.10mmol), n-octyl cyanoacetate (0.33g, 1.67mmol), 5 drops of piperidine, 10mL of dry chloroform into a 50mL single-necked bottle, reflux for 4h, inter-extract water and chloroform, and dry the organic phase. After filtration, the solvent was spin-dried, and recrystallized from ethanol to obtain the final product G (0.47g), with a yield of 72%. The characterization data of this product G are as follows:

MS(MALDI-TOF):Calcd,593.13;Found,593.05。MS (MALDI-TOF): Calcd, 593.13; Found, 593.05.

1H NMR(CDCl3,400MHz):δ=8.37(s,1H),δ=7.13(s,1H),δ=4.42~4.39(m,4H),δ=4.26(t,2H),δ=2.55(t,2H),1.77~1.70(m,2H),1.60~1.56(m,2H),1.37~1.28(m,16H),0.92~0.87(m,6H)。 1 H NMR (CDCl 3 , 400MHz): δ=8.37(s,1H), δ=7.13(s,1H), δ=4.42~4.39(m,4H), δ=4.26(t,2H), δ= 2.55(t,2H), 1.77~1.70(m,2H), 1.60~1.56(m,2H), 1.37~1.28(m,16H), 0.92~0.87(m,6H).

本实施例的合成路线请参阅图9。Please refer to Figure 9 for the synthetic route of this example.

实施例6该有机小分子半导体材料的合成制备工艺可以为:Embodiment 6 The synthesis and preparation process of the organic small molecule semiconductor material can be:

无水无氧条件下25mL单口瓶中加入A(0.13g,0.17mmol),四(三苯基磷)钯(21mg,17.5μmol),G(0.23g,0.38mmol),DMF(3mL),在80℃下反应20小时,反应完毕,用甲醇沉淀,收集固体,柱层析法提纯,得到最终产品H(0.25g),收率73%。Add A (0.13g, 0.17mmol), tetrakis(triphenylphosphine)palladium (21mg, 17.5μmol), G (0.23g, 0.38mmol), DMF (3mL) into a 25mL single-necked bottle under anhydrous and anaerobic conditions, in The reaction was carried out at 80°C for 20 hours. After the reaction was completed, the solid was collected by precipitation with methanol and purified by column chromatography to obtain the final product H (0.25 g), with a yield of 73%.

该产品H的表征数据如下:The characterization data of this product H are as follows:

MS(MALDI-TOF):Calcd,1472.63;Found,1472.37。MS (MALDI-TOF): Calcd, 1472.63; Found, 1472.37.

1H NMR(CDCl3,400MHz):δ=8.37(s,2H),δ=7.48(s,2H),δ=7.33(s,2H),δ=4.45(s,8H),δ=4.26(t,4H),δ=4.21(d,4H),δ=2.88(t,4H),δ=1.87~1.81(m,2H),1.72~1.52(m,16H),1.42~1.41(m,16H)1.36~1.25(m,24H),δ=1.04(t,6H),δ=0.95(t,6H),δ=0.91~0.87(m,12H)。 1 H NMR (CDCl 3 , 400MHz): δ=8.37(s,2H), δ=7.48(s,2H), δ=7.33(s,2H), δ=4.45(s,8H), δ=4.26( t,4H),δ=4.21(d,4H),δ=2.88(t,4H),δ=1.87~1.81(m,2H),1.72~1.52(m,16H),1.42~1.41(m,16H ) 1.36~1.25(m,24H), δ=1.04(t,6H), δ=0.95(t,6H), δ=0.91~0.87(m,12H).

本实施例的合成路线请参阅图10。Please refer to Figure 10 for the synthetic route of this example.

以上说明及所示的实施例,不可解析为限定本发明的设计思想。在本发明的技术领域里持有相同知识者可以将本发明的技术性思想以多样的形态改良变更,这样的改良及变更应理解为属于本发明的保护范围内。The above described and illustrated embodiments should not be interpreted as limiting the design concept of the present invention. Those who have the same knowledge in the technical field of the present invention can improve and change the technical idea of the present invention in various forms, and such improvements and changes should be understood as belonging to the protection scope of the present invention.

Claims (9)

1.一种有机小分子半导体材料,其特征在于包含一Cor基团以及与该Cor基团连接的两个结构单元,每一结构单元包括一个FT基团,一个3,4-位由烷氧基或烷硫基修饰的噻吩单元和一个A基团,所述A基团依次经所述3,4-位由烷氧基或烷硫基修饰的噻吩单元及所述FT基团与Cor基团连接,1. A small organic molecule semiconductor material is characterized in that it comprises a Cor group and two structural units connected with the Cor group, each structural unit comprises a FT group, and a 3,4-position is formed by alkoxy A thiophene unit modified by a group or an alkylthio group and an A group, the A group is sequentially passed through the thiophene unit modified by an alkoxy group or an alkylthio group at the 3,4-position and the FT group and the Cor group group connection, 其中,A基团为受电子基团单元,FT基团包括由1~12个修饰或未修饰噻吩组合形成的寡聚噻吩短链单元,Cor基团包括由两个以上的5或6元环并联形成的稠环π共轭单元或其衍生单元,所述3,4-位由烷氧基或烷硫基修饰的噻吩单元具有如下结构式:Among them, the A group is an electron-accepting group unit, the FT group includes an oligothiophene short chain unit formed by combining 1 to 12 modified or unmodified thiophenes, and the Cor group includes two or more 5- or 6-membered rings. The condensed ring π-conjugated unit formed in parallel or its derivative unit, the thiophene unit modified by alkoxy or alkylthio at the 3,4-position has the following structural formula: 其中,X包括氧原子或者硫原子,R1、R2包括取代或未取代的C1~C20的烷基或C1~C20的杂烷基。Wherein, X includes an oxygen atom or a sulfur atom, and R 1 and R 2 include a substituted or unsubstituted C1-C20 alkyl group or a C1-C20 heteroalkyl group. 2.根据权利要求1所述有机小分子半导体材料,其特征在于,在所述3,4-位由烷氧基或烷硫基修饰的噻吩单元中,R1与R2之间相互连接,并与连接在噻吩环的3,4-位上的两个氧或硫原子及噻吩环上的邻近C-C键形成5~8元取代或未取代的环状结构。2. according to the described organic small molecule semiconductor material of claim 1, it is characterized in that, in the thiophene unit that described 3,4-position is modified by alkoxy group or alkylthio group, R 1 and R 2 are connected with each other, And with the two oxygen or sulfur atoms connected to the 3,4-position of the thiophene ring and the adjacent CC bonds on the thiophene ring to form a 5-8-membered substituted or unsubstituted ring structure. 3.根据权利要求2所述的有机小分子半导体材料,其特征在于所述环状结构包括一噻吩单元,且修饰于该噻吩单元的3,4-位的氧和/或硫原子之间连接有至少一分子碎片,所述分子碎片包括-CH2-CH2-。3. The organic small molecule semiconductor material according to claim 2, characterized in that the ring structure includes a thiophene unit, and is modified in the 3,4-position oxygen and/or sulfur atom of the thiophene unit. There is at least one molecular fragment comprising -CH2 - CH2-. 4.根据权利要求1所述的有机小分子半导体材料,其特征在于所述A基团至少具有如下结构式中的任意一种:4. organic small molecule semiconductor material according to claim 1, is characterized in that described A group has any one in following structural formula at least: 其中,R3包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基。Wherein, R 3 includes hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl. 5.根据权利要求4所述的有机小分子半导体材料,其特征在于所述A基团具有下列结构式中的任一种:5. The small organic molecule semiconductor material according to claim 4, characterized in that the A group has any one of the following structural formulas: 其中,R3包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基。Wherein, R 3 includes hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl. 6.根据权利要求1所述的有机小分子半导体材料,其特征在于所述FT基团至少具有下列结构式中的任意一种:6. The organic small molecule semiconductor material according to claim 1, characterized in that the FT group has at least any one of the following structural formulas: 其中,R4、R5、R6包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基,m、n为0~2的整数,且m、n不能同时为0,r为1或2,R7和R8中的一个为氢、另一个为取代或未取代的C1~C20的烷基或C1~C20的杂烷基,q为1~12之间的任意一个整数。Among them, R 4 , R 5 , and R 6 include hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl, m and n are integers from 0 to 2, and m and n cannot be 0, r is 1 or 2, one of R7 and R8 is hydrogen, the other is substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl, q is between 1-12 any integer. 7.根据权利要求1或6所述的有机小分子半导体材料,其特征在于所述FT基团至少具有如下结构式中的任一种:7. The organic small molecule semiconductor material according to claim 1 or 6, characterized in that the FT group has at least any one of the following structural formulas: 其中,R9包括取代或未取代的C1~C20的烷基或C1~C20的杂烷基,R10包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基。 Wherein, R 9 includes substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl, R 10 includes hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl. 8.根据权利要求1所述的有机小分子半导体材料,其特征在于所述Cor基团至少具有下列结构单元中的任意一种:8. The organic small molecule semiconductor material according to claim 1, characterized in that the Cor group has at least any one of the following structural units: 其中,X1、X2、X3至少独立地选自O、S、Se、Si、N、C原子中的任一者及与该者附属连接的C1~C20的烷基或C1~C20的杂烷基,R11包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基,k为1~5中的一个整数。Among them, X 1 , X 2 , and X 3 are at least independently selected from any one of O, S, Se, Si, N, and C atoms and the C1-C20 alkyl or C1-C20 Heteroalkyl, R 11 includes hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl, k is an integer of 1-5. 9.根据权利要求1或8所述的有机小分子半导体材料,其特征在于所述Cor基团具有如下结构式中的任一种:9. The organic small molecule semiconductor material according to claim 1 or 8, characterized in that the Cor group has any one of the following structural formulas: 其中,R12包括氢、取代或未取代的C1~C20的烷基或C1~C20的杂烷基。Wherein, R 12 includes hydrogen, substituted or unsubstituted C1-C20 alkyl or C1-C20 heteroalkyl.
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CN103374116A (en) * 2012-04-24 2013-10-30 南开大学 Photoelectric material preparation method
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