CN104952966A - Photodiode, production method thereof and image sensor with photodiode - Google Patents
Photodiode, production method thereof and image sensor with photodiode Download PDFInfo
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Abstract
The present invention discloses a photodiode, a production method thereof and an image sensor with the photodiode. The photodiode comprises a first doped region deposed on the upper surface of a substrate and a second doped region deposed on the upper surface of the first doped region. The conductive types of the first doped region and the second doped region are different. The upper surface of the first doped region is provided with one or more surface changing parts which protrudes outward or sinks inward, and the second doped region is arranged at the upper surface of the first doped region and is provided with a structure changing part which is in accordance with shape of the surface changing parts. According to the photodiode, in the condition that the cross section of the area on the substrate occupied by the second doped region in the photodiode is not changed, the surface of the second doped region is added, and thus the effective photosensitive area and filling factor of the photodiode are increased.
Description
Technical field
The present invention relates to semiconductor integrated circuit and make field, in particular to a kind of photodiode, its manufacture method and the imageing sensor comprising it.
Background technology
Photodiode, as electrooptical device, can be applicable in cmos image sensor.The elementary cell of cmos image sensor is called pixel, and it is made up of, referred to as 3T type or 4T type 1 photodiode and 3 or 4 MOS transistor.Wherein, photodiode is used for converting light signal to corresponding current signal, and MOS transistor is for reading the current signal of photodiode converts.
Fig. 1 is the structural representation of the cmos image sensor of a kind of 4T type in prior art.As shown in Figure 1, this CMOS image sensor comprises: substrate 110 ' and the photodiode 100 ', transfering transistor 300 ' and the potential well 200 ' that are formed in successively on this substrate 110 '.Wherein photodiode 100 ' comprises the first doped region 120 ' and the second doped region 130 ' that are formed successively towards the direction away from substrate 110 '; Potential well 200 ' is formed reset transistor 220 ', source follower transistor 210 ', selects transistor 230 ' and fleet plough groove isolation structure 240 '.Transfering transistor 300 ' is between photodiode 100 ' and potential well 200 ', and the source region of transfering transistor 300 ' is connected with photodiode 100 ', and the drain region of transfering transistor 300 ' is connected with source follower transistor 210 '.
The effective feeling light area of photodiode and the ratio of single pixel gross area are called fill factor, curve factor in the image sensor, and the numerical value of this fill factor, curve factor is higher, then pixel performance is better.Wherein the effective feeling light area of photodiode refers in photodiode the photosensitive area of the second doped region being positioned at substrate surface.As shown in structure in Fig. 1, in the manufacturing process of existing imageing sensor, while single pixel gross area changes, the photosensitive surface of wherein comprised photodiode is long-pending also can correspondingly change, in this case, be difficult to change the effective feeling light area of photodiode and the ratio of single pixel gross area, and then be difficult to the numerical value increasing fill factor, curve factor.At present, those skilled in the art attempt when single pixel gross area is constant, expand the cross-sectional area in shared region on substrate, the second doped region in the photodiode of single pixel, with the ratio of the effective feeling light area and single pixel gross area that change photodiode, and then increase the numerical value of fill factor, curve factor.But this method can cause the interval between photodiode and the grid of transistor (than transfering transistor as shown in Figure 1) be adjacent to be reduced, and makes the reliability of device and yield reduce.
Summary of the invention
The present invention aims to provide a kind of photodiode, its manufacture method and comprises its imageing sensor, to improve the fill factor, curve factor of imageing sensor.
To achieve these goals, according to an aspect of the present invention, provide a kind of photodiode, comprise the first doped region be entrained in substrate top surface, and the second doped region be entrained on the first doped region upper surface, first doped region is different with the conduction type of the second doped region, wherein, the surface alteration upper surface of the first doped region having one or more outwardly convex or caves inward, second doped region is arranged on the upper surface of the first doped region, has the structural change portion conformed to surface alteration shape.
Further, in above-mentioned photodiode, surface alteration is outwardly or the class rectangular pyramid structure that caves inward.
Further, in above-mentioned photodiode, the upper surface of the first doped region has multiple class rectangular pyramid structure, and all kinds of rectangular pyramid structure is arranged continuously at the upper surface of the first doped region.
Further, in above-mentioned photodiode, the height of class rectangular pyramid structure is the thickness of the 1/8 ~ 1/4, second doped region of the first doped region thickness is 1/10 ~ 1/5 of the height of class rectangular pyramid structure.
According to a further aspect in the invention, provide a kind of manufacture method of photodiode, comprise and form the first doped region on the upper surface of the substrate, the upper surface of the first doped region is formed the second doped region that conduction type is different from the first doped region, wherein, before the step of formation second doped region, form on the surface of the first doped region the surface alteration that there is one or more outwardly convex or cave inward; In the step of formation second doped region, the upper surface of the first doped region forms the structural change portion conformed to surface alteration shape.
Further, in above-mentioned manufacture method, the step forming surface alteration comprises: the surface alteration being formed outwardly convex by epitaxially grown mode on the surface of the first doped region; Or form by the mode of wet etching the surface alteration caved inward on the surface of the first doped region, preferably, surface alteration is class rectangular pyramid structure outwardly.
Further, in above-mentioned manufacture method, when forming multiple surface alteration, the step forming surface alteration comprises: the mask layer forming patterning on the surface of the first doped region; On the exposed surface of the first doped region, multiple surface alteration is formed by wet etching or epitaxially grown mode.
Further, in above-mentioned manufacture method, the step forming the first doped region in substrate top surface comprises: carry out ion implantation to the upper surface of substrate, forms the first preparation doped region; And annealed in the first preparation doped region, form the first doped region.
Further, in above-mentioned manufacture method, the step forming the second doped region comprises: the upper surface the first doped region to surface alteration carries out ion implantation, forms the second preparation doped region; And annealed in the second preparation doped region, form second doped region with the structural change portion conformed to surface alteration shape.
Present invention also provides a kind of imageing sensor, comprise the photodiode be arranged on substrate, it is characterized in that, the photodiode that photodiode provides for the application.
Apply technical scheme of the present invention, by the surface alteration forming one or more outwardly convex or cave inward on the upper surface of the first doped region, thus the cross-sectional area in shared region on substrate, the second doped region is constant in the photodiode, add the surface area of the second doped region, and then add effective feeling light area and the fill factor, curve factor of photodiode.Meanwhile, the reflection of light can also be reduced by the angle changed between this surface alteration and substrate plane, thus improve effective photoelectric conversion efficiency of photodiode.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the structural representation of conventional images transducer;
Fig. 2 (a) shows the structural representation of the photodiode provided according to a kind of preferred implementation of the application;
Fig. 2 (b) shows the structural representation of the photodiode provided according to the another kind of preferred implementation of the application;
Fig. 3 shows the schematic flow sheet of the manufacture method of the photodiode that the embodiment of the present application provides;
Fig. 4 shows in the manufacture method of the photodiode that the embodiment of the present application provides, and substrate is formed the cross-sectional view of the matrix behind the first doped region;
Fig. 5 (a) shows the cross-sectional view of the matrix after the surface of the first doped region shown in Fig. 4 forms the surface alteration caved inward;
Fig. 5 (b) shows the cross-sectional view of the matrix after the surface of the first doped region shown in Fig. 4 forms the surface alteration of outwardly convex;
Fig. 6 (a) shows the cross-sectional view of the matrix form the second doped region on the upper surface of the first doped region shown in Fig. 5 (a) after;
Fig. 6 (b) shows the cross-sectional view of the matrix form the second doped region on the upper surface of the first doped region shown in Fig. 5 (b) after; And
Fig. 7 shows the cross-sectional view of the imageing sensor that the embodiment of the present application provides.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
From background technology, in the photodiode of existing single dot structure, active region area is difficult to increase, and then affecting the problem of fill factor, curve factor size, the applicant of the application studies for the problems referred to above, proposes a kind of photodiode, its manufacture method and comprises its imageing sensor.As shown in Fig. 2 (a) and Fig. 2 (b), this photodiode comprises: the first doped region 120 being entrained in substrate 110 upper surface, and the second doped region 130 be entrained on the first doped region 120 upper surface, and the first doped region 120 is different with the conduction type of the second doped region 130.Wherein, the surface alteration 121 upper surface of the first doped region 120 having one or more outwardly convex or cave inward, second doped region 130 is arranged on the upper surface of the first doped region 120, has the structural change portion conformed to surface alteration 121 shape.
Above-mentioned surface alteration 121 can the cross-sectional area in shared region on a substrate 110, the second doped region 130 in the photodiode constant when, increase the surface area of the second doped region 130, and then add effective feeling light area and the fill factor, curve factor of photodiode.Meanwhile, this surface alteration 121 can also reduce the reflection of light, thus improves effective photoelectric conversion efficiency of photodiode.
According to the difference of the process of making surface alteration 121, above-mentioned surface alteration 121 can have different shape facilities.In a kind of preferred implementation of the application, as shown in Figure 2 (a) shows, this surface alteration 121 can for the class rectangular pyramid structure caved inward.Wherein, class rectangular pyramid structure comprises rectangular pyramid structure or tetragonous cone table structure, the similar rectangular pyramid structure (such as, two relative sides are connected to form straight line and the similar rectangular pyramid structure that two other relative side is not connected to form) formed by four sides can also be comprised.The surface alteration 121 of this class rectangular pyramid structure caved inward can be formed by wet-etching technology.In the another kind of preferred implementation of the application, as shown in Fig. 2 (b), this surface alteration 121 can be class rectangular pyramid structure outwardly.The surface alteration 121 of this class rectangular pyramid structure outwardly can be formed by epitaxial growth technology.Above-mentioned surface alteration 121 has four surfaces in a certain angle with the upper surface of substrate 110, this surface can the cross-sectional area in shared region on a substrate 110, the second doped region 130 in the photodiode constant when, increase the surface area of the second doped region 130, and then add effective feeling light area and the fill factor, curve factor of photodiode.The reflection of light can also be reduced by the angle changed between surface alteration and substrate plane, thus improve effective photoelectric conversion efficiency of photodiode.
According to the making process of surface alteration 121 and the difference of parameter, the surface alteration 121 of above-mentioned class rectangular pyramid structure can be of different sizes feature.In a kind of preferred implementation of the application, surface alteration 121 on the upper surface of the first doped region 120 is multiple class rectangular pyramid structures, and all kinds of rectangular pyramid structure is arranged continuously at the upper surface of the first doped region 120, preferably, the height h of all kinds of rectangular pyramid structure is the thickness b of 1/8 ~ 1/4, second doped region 130 of the first doped region 120 thickness a is 1/10 ~ 1/5 of the height h of class rectangular pyramid structure.Wherein, the thickness of the first doped region is the distance between the lower surface of the first doped region in the upper surface of substrate and substrate, and the thickness of the second doped region 130 refers to that the second doped region 130 is along perpendicular to the thickness on respective surfaces direction, class rectangular pyramid side.When making above-mentioned photodiode, the upper surface of the first doped region 120 can form much small, surface alteration 121 with above-mentioned size characteristic, thus significantly increase the area of active area in photodiode, and reduce the reflection of light, and then significantly increase the effective feeling light area of photodiode and effective photoelectric conversion efficiency.
According to the difference of the kind of Doped ions, above-mentioned first doped region 120 and the second doped region 130 have different conduction types.Such as, when the first doped region 120 is for P-type conduction district, the second doped region 130 is N-type conduction region; When the first doped region 120 is N-type conduction region, the second doped region 130 is P-type conduction district.The technique that above-mentioned doping forms P type or N-type conduction region is prior art, does not repeat them here.
Above-mentioned photodiode can adopt any method well-known to those skilled in the art to be formed, and in the preferred embodiment of the present invention, as shown in Figure 3, the manufacture method of above-mentioned photodiode comprises: form the first doped region in substrate top surface; The surface alteration that there is one or more outwardly convex or cave inward is formed on the surface of the first doped region; The upper surface of the first doped region is formed second doped region with the structural change portion conformed to surface alteration shape, and the conduction type of the second doped region is different from the first doped region.
In above-mentioned manufacture method, by the surface alteration forming one or more outwardly convex or cave inward on the upper surface of the first doped region, thus the cross-sectional area in shared region on substrate, the second doped region is constant in the photodiode, add the surface area of the second doped region, and then add effective feeling light area and the fill factor, curve factor of photodiode.Meanwhile, the reflection of light can also be reduced by the angle changed between this surface alteration and substrate plane, thus improve effective photoelectric conversion efficiency of photodiode.
Fig. 4 to Fig. 6 shows in the manufacture method of the photodiode that the application provides, the cross-sectional view of the photodiode obtained after each step.Below in conjunction with Fig. 4 to Fig. 6, further illustrate the manufacture method of the photodiode that the application provides.
First, surface forms the first doped region 120 on a substrate 110, forms basal body structure as described in Figure 4.Particularly, a kind of preferred implementation forming the step of above-mentioned first doped region 120 is: carry out ion implantation to the upper surface of substrate 110, forms the first preparation doped region; Annealed in first preparation doped region, form the first doped region 120.In above-mentioned steps, ion implantation and annealing process are prior art, its concrete technology parameter and can conventionally arranging.In the optional execution mode of the one of the application, the process conditions of above-mentioned ion implantation are: injection ion is phosphonium ion, and the dosage range injecting ion is 1.0E+12 ~ 1.0E+13cm
-2, the energy range injecting ion is 100 ~ 400Kev, and the injection degree of depth of ion is 300 ~ 500 nanometers; The process conditions of above-mentioned annealing are: annealing temperature is 900 ~ 1200 DEG C, and annealing time is 30 ~ 60 seconds.
After surface forms the step of the first doped region 120 on a substrate 110, form on the surface of the first doped region 120 surface alteration 121 that there is one or more outwardly convex or cave inward.The process making surface alteration 121 has a variety of, and in a preferred embodiment, the step forming surface alteration 121 comprises: the surface alteration 121 being formed outwardly convex by epitaxially grown mode on the surface of the first doped region 120; Or form by the mode of wet etching the surface alteration 121 caved inward on the surface of the first doped region 120, preferably, surface alteration 121 is class rectangular pyramid structure outwardly.
When needs form multiple surface alteration 121, one preferred embodiment in, comprise the following steps: the mask layer forming patterning on the surface of the first doped region 120; On the exposed surface of described first doped region 120, multiple surface alteration 121 is formed by wet etching or epitaxially grown mode.Wherein, the object forming the mask layer of patterning is kept apart by the surface alteration 121 of follow-up formation.The step forming the mask layer of above-mentioned patterning comprises: on the surface of the first doped region 120, form preparation mask layer; Etch described preparation mask layer, form the mask layer of patterning.Above-mentioned preparation mask layer can be mask material common in this area, such as dielectric material or organic material etc., and the technique forming above-mentioned preparation mask layer can be spin coating or chemical vapour deposition (CVD) etc., and above-mentioned technique is state of the art, does not repeat them here.
When adopting the mode of wet etching to form multiple surface alteration 121, because wet etching has anisotropic, thus the surface alteration 121 defining class rectangular pyramid structure at the upper surface of the first doped region 120, cave inward, its structure is as shown in Fig. 5 (a).The solution of above-mentioned wet etching can include but not limited to adopt NaOH, potassium hydroxide and tetramethyl ammonium hydroxide solution, and the technique of wet etching can adopt infusion method and rotary spray method.When adopting infusion method to etch the first doped region 120, in a kind of optional execution mode, soak etching technique comprise: by mass fraction be 5% ~ 20% NaOH solution be placed in etching groove, control the temperature of NaOH solution in etching groove at 25 ~ 50 DEG C, then the silicon chip comprising the first doped region 120 is placed in NaOH solution, first doped region 120 is reacted with NaOH solution, and the reaction time is 30 ~ 120 seconds.When adopting rotary spray method to etch the first doped region 120, in a kind of optional execution mode, rotary spray etching mode comprise: by mass fraction be 5% ~ 20% KOH solution spray to comprise the first doped region 120 silicon chip on, and make KOH solution be evenly distributed on the first doped region 120 on the surface by low speed rotation (300 ~ 500rpm), under temperature is 25 ~ 50 DEG C of conditions, first doped region 120 is reacted with KOH solution, and the reaction time is 30 ~ 120 seconds.
When adopting epitaxially grown mode to form multiple surface alteration 121, define the surface alteration 121 of class rectangular pyramid structure, outwardly convex at the upper surface of the first doped region 120, its structure is as shown in Fig. 5 (b).Above-mentioned epitaxially grown optimal process includes but not limited to adopt vapour phase epitaxy, evaporation, sputtering.In a kind of Alternate embodiments of the application, adopt low-pressure chemical vapor deposition process to make surface alteration 121, its preferred process conditions are: with H
2and SiH
4for reacting gas, P elements (phosphine or phosphorus trichloride) or boron element (diborane or boron chloride) are alloy, and reaction pressure is 1 × 10
2~ 1 × 10
-1pa, reaction temperature is 400 ~ 650 DEG C.
Complete after the surface of the first doped region 120 forms the step of surface alteration 121, the upper surface of the first doped region 120 is formed second doped region 130 with the structural change portion conformed to surface alteration 121 shape.In a kind of preferred implementation of the application, the step of above-mentioned formation second doped region 130 comprises: carry out ion implantation to the upper surface of the first doped region 120, forms the second preparation doped region; Annealed in second preparation doped region, form the second doped region 130.In above-mentioned steps, ion implantation and annealing process are prior art, and its concrete technology parameter can conventionally be arranged.In a kind of preferred implementation of the application, the process conditions of above-mentioned ion implantation are: injecting ion is boron ion, and the dosage range injecting ion is 2.0E+12 ~ 1.2E+13cm
-2, the energy range injecting ion is 5 ~ 15Kev, and the injection degree of depth of ion is 20 ~ 50 nanometers; The process conditions of above-mentioned annealing are: annealing temperature is 900 ~ 1200 DEG C, and annealing time is 30 ~ 60 seconds.
In above-mentioned steps, the upper surface due to the first doped region 120 has and caves inward or the surface alteration 121 of outwardly convex, and the second doped region 130 therefore obtained through above-mentioned steps can form the structural change portion conformed to this surface alteration 121 shape.On inwall such as on the above-mentioned surface alteration 121 caved inward, doping forms corresponding construction change section, forms basal body structure as shown in Figure 6 (a).Such as on the outer surface of the surface alteration 121 of above-mentioned outwardly convex, doping forms corresponding construction change section again, forms the basal body structure shown in Fig. 6 (b).
Present invention also provides a kind of imageing sensor.This imageing sensor comprises: be arranged at the photodiode on substrate and transistor, wherein the photodiode that provides for the application of above-mentioned photodiode.Wherein, the elementary cell of above-mentioned imageing sensor is pixel, is made up of, referred to as 3T type or 4T type 1 photodiode and 3 or 4 MOS transistor.Those skilled in the art can, according to the field of imageing sensor practical application, select to adopt 3T type or 4T type.
In a kind of preferred implementation of the application, the elementary cell of above-mentioned imageing sensor is made up of 1 photodiode and 4 MOS transistor, as shown in Figure 7.As can be seen from Figure 7, this imageing sensor comprises: substrate 110 and the photodiode 100, transfering transistor 300 and the potential well 200 that are formed in successively on this substrate 110.Wherein photodiode 100 is above-mentioned the provided photodiode of the application; Potential well 200 is formed reset transistor 220, source follower transistor 210, selects transistor 230 and fleet plough groove isolation structure 240.Transfering transistor 300 is between photodiode 100 and potential well 200, and the source region of transfering transistor 300 is connected with photodiode, and the drain region of transfering transistor 300 is connected with source follower transistor 210.In above-mentioned imageing sensor, MOS transistor consist of prior art, do not repeat them here.The effective feeling light area with the imageing sensor of said structure is increased, and fill factor, curve factor is also improved, and then the reliability of imageing sensor and yield are reduced.
As can be seen from the above description, the above embodiments of the present invention achieve following technique effect:
(1) surface alteration by forming one or more outwardly convex or cave inward on the upper surface of the first doped region, thus the cross-sectional area in shared region on substrate, the second doped region is constant in the photodiode, add the surface area of the second doped region, and then add effective feeling light area and the fill factor, curve factor of photodiode.
(2) reflection of light can also be reduced by the angle changed between this surface alteration and substrate plane, thus improve effective photoelectric conversion efficiency of photodiode.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (10)
1. a photodiode, comprise the first doped region be entrained in substrate top surface, and the second doped region be entrained on described first doped region upper surface, described first doped region is different with the conduction type of the second doped region, it is characterized in that, the surface alteration that the upper surface of described first doped region has one or more outwardly convex or caves inward, described second doped region is arranged on the upper surface of described first doped region, has the structural change portion conformed to described surface alteration shape.
2. photodiode according to claim 1, is characterized in that, described surface alteration is outwardly or the class rectangular pyramid structure that caves inward.
3. photodiode according to claim 2, is characterized in that, the upper surface of described first doped region has multiple described class rectangular pyramid structure, and all kinds of rectangular pyramid structure is arranged continuously at the upper surface of described first doped region.
4. the photodiode according to Claims 2 or 3, the height of described class rectangular pyramid structure is 1/8 ~ 1/4 of the first doped region thickness, and the thickness of described second doped region is 1/10 ~ 1/5 of the height of class rectangular pyramid structure.
5. a manufacture method for photodiode, comprises and forms the first doped region on the upper surface of the substrate, the upper surface of described first doped region is formed the second doped region that conduction type is different from described first doped region, it is characterized in that,
Before the step forming described second doped region, form on the surface of described first doped region the surface alteration that there is one or more outwardly convex or cave inward;
In the step forming described second doped region, the upper surface of described first doped region forms the structural change portion conformed to described surface alteration shape.
6. manufacture method according to claim 5, is characterized in that, the step forming described surface alteration comprises: the surface alteration being formed outwardly convex by epitaxially grown mode on the surface of described first doped region; Or form the surface alteration caved inward by the mode of wet etching on the surface of described first doped region, preferably, described surface alteration is class rectangular pyramid structure outwardly.
7. manufacture method according to claim 6, is characterized in that, when forming multiple described surface alteration, the step forming described surface alteration comprises: the mask layer forming patterning on the surface of described first doped region; On the exposed surface of described first doped region, multiple described surface alteration is formed by wet etching or epitaxially grown mode.
8. manufacture method according to claim 7, is characterized in that, the step of described first doped region of surface formation comprises over the substrate:
Ion implantation is carried out to the upper surface of described substrate, forms the first preparation doped region; And
Annealed in described first preparation doped region, form described first doped region.
9. manufacture method according to claim 8, is characterized in that, the step forming described second doped region comprises:
The upper surface described first doped region to described surface alteration carries out ion implantation, forms the second preparation doped region; And
Annealed in described second preparation doped region, form described second doped region with the structural change portion conformed to described surface alteration shape.
10. an imageing sensor, comprises the photodiode be arranged on substrate, it is characterized in that, the photodiode of described photodiode according to any one of Claims 1-4.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107689381A (en) * | 2016-08-04 | 2018-02-13 | 力晶科技股份有限公司 | Image sensor and manufacturing method thereof |
| CN108470785A (en) * | 2018-04-09 | 2018-08-31 | 德淮半导体有限公司 | Photodiode and preparation method thereof |
| CN109585476A (en) * | 2017-09-29 | 2019-04-05 | 台湾积体电路制造股份有限公司 | Cmos image sensor and forming method thereof |
| CN112240877A (en) * | 2019-07-16 | 2021-01-19 | 香港城市大学 | Method for forming nano material with gap plasma on substrate and sensor |
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| CN2405204Y (en) * | 1999-12-10 | 2000-11-08 | 中国科学院上海技术物理研究所 | Photovoltaic prober array having micro-light cone |
| CN101132018A (en) * | 2006-08-23 | 2008-02-27 | 东部高科股份有限公司 | Image sensor and fabricating method thereof |
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| CN2405204Y (en) * | 1999-12-10 | 2000-11-08 | 中国科学院上海技术物理研究所 | Photovoltaic prober array having micro-light cone |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107689381A (en) * | 2016-08-04 | 2018-02-13 | 力晶科技股份有限公司 | Image sensor and manufacturing method thereof |
| CN109585476A (en) * | 2017-09-29 | 2019-04-05 | 台湾积体电路制造股份有限公司 | Cmos image sensor and forming method thereof |
| CN109585476B (en) * | 2017-09-29 | 2021-03-30 | 台湾积体电路制造股份有限公司 | CMOS image sensor and method for forming the same |
| CN108470785A (en) * | 2018-04-09 | 2018-08-31 | 德淮半导体有限公司 | Photodiode and preparation method thereof |
| CN112240877A (en) * | 2019-07-16 | 2021-01-19 | 香港城市大学 | Method for forming nano material with gap plasma on substrate and sensor |
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Application publication date: 20150930 |