CN104946146A

CN104946146A - Chip bonding film, chip bonding film with cutting disk, semiconductor device, and manufacturing method for semiconductor device

Info

Publication number: CN104946146A
Application number: CN201510141488.4A
Authority: CN
Inventors: 大西谦司; 三隅贞仁; 村田修平; 宍户雄一郎; 木村雄大
Original assignee: Nitto Denko Corp
Current assignee: Nitto Denko Corp
Priority date: 2014-03-31
Filing date: 2015-03-27
Publication date: 2015-09-30
Anticipated expiration: 2035-03-27
Also published as: JP6356458B2; JP2015195265A; KR20150113905A; TWI666290B; CN104946146B; TW201540809A

Abstract

Provided are a chip bonding film, a chip bonding film with a cutting disk, a semiconductor device, and a manufacturing method for the semiconductor device. The invention provides a chip bonding film which can easily determine fragments of a semiconductor chip. The chip bonding film is characterized in that when light transmittance in wavelength of 400 nm before thermofixation is set to be T1(%) and light transmittance in wavelength of 400 nm after the film is heated for one hour in 120 DEG C is set to be T2(%), T1 is more than 80%, and the difference (T1-T2) of T1 and T2 is lower than 20%.

Description

The manufacture method of chip join film, chip join film, semiconductor device and semiconductor device with cutting blade

Technical field

The present invention relates to the manufacture method of chip join film, chip join film, semiconductor device and semiconductor device with cutting blade.

Background technology

In the past, in the manufacturing processed of semiconductor device, to during the adherend set semi-conductor chips such as lead frame use silver slurry.Described set process, by applying the tackiness agent of pulpous state on the pad etc. of lead frame, is carried semi-conductor chip thereon and pulpous state adhesive layer is solidified and carry out.

But pulpous state tackiness agent produces larger deviation according to its viscosity behavior or deterioration etc. at coating amount or coating vpg connection.As a result, the pulpous state Adhesive thickness of formation is uneven, and therefore the set strength reliability of semi-conductor chip is not enough.Such as, when the coating amount of pulpous state tackiness agent is not enough, the set intensity between semi-conductor chip and adherend reduces, and in follow-up wire bond operation, semi-conductor chip is peeled off.On the other hand, when the coating amount of pulpous state tackiness agent is too much, pulpous state tackiness agent curtain coating to semi-conductor chip produces bad characteristic, yield rate or reliability decrease always.Problem in such set process becomes remarkable especially along with the maximization of semi-conductor chip.

In the working procedure of coating of this pulpous state tackiness agent, have and pulpous state tackiness agent is coated to lead frame, the method formed on chip respectively.But the method is difficult to the homogenizing realizing pulpous state adhesive layer, the coating of pulpous state tackiness agent needs special device or long-time in addition.Therefore, proposed the die bonding film (such as, referenced patent document 1) with the adhesive layer that semi-conductor chip is fixed in the past.

Chip join film fit to semiconductor wafer and cut together with semiconductor wafer after, peel off from dicing tape together with formed semi-conductor chip.Afterwards, semi-conductor chip is bonded to adherend by chip join film.

Prior art document

Patent documentation

Patent documentation 1: Japanese Unexamined Patent Publication 05-179211 publication

Summary of the invention

The problem that invention will solve

The present inventor is studied using the semiconductor device of above-mentioned chip join film manufacture.Result is found out, the back side of semi-conductor chip is covered by chip join film, even if therefore produce fragment, is also difficult to find.

The present invention carries out in view of described problem, its object is to provide the chip join film that easily can confirm the fragment of semi-conductor chip and the chip join film with cutting blade.In addition, be to provide the semiconductor device using this chip join film or should manufacture with the chip join film of cutting blade.In addition, be to provide and employ this manufacture method with the semiconductor device of the chip join film of cutting blade.

Solve the method for problem

The present inventor conducts in-depth research to solve described problem.Found that, by adopting the chip join film of following formation, easily can confirm the fragment of semi-conductor chip, and completing the present invention.

Namely, the feature of chip join film involved in the present invention is, when the transmittance before thermofixation under wavelength 400nm being set to T1 (%) and the transmittance heated after 1 hour under wavelength 400nm at 120 DEG C is set to T2 (%), described T1 is more than 80%, and the difference (T1-T2) of described T1 and described T2 is less than 20%.

According to described formation, described T1 (%) is more than 80%, therefore this chip join film be pasted on the state at the back side of semi-conductor chip and state before thermofixation (such as, state after cutting) under, easily can find the back side of semi-conductor chip, whether side exist fragment.

In addition, the difference (T1-T2) of described T1 and described T2 is less than 20%, at 120 DEG C, therefore (such as, heat after 1 hour) light transmission also had to a certain degree after thermofixation.Therefore, even if under the state after thermofixation, also easily can find the back side of semi-conductor chip, whether side exist fragment.

Visible, according to the present invention, before thermofixation and after thermofixation under these two states, easily can both find the back side of semi-conductor chip, whether side exist fragment.

In addition, after with the technique of thermal history, such as chip join, wire bond, also visual confirmation can be carried out to the space of chip join film.

In described formation, the ratio T2/T1 of described T1 and described T2 is preferably in the scope of 0.75 ~ 1.0.

If described than T2/T1 in the scope of 0.75 ~ 1.0, then at 120 DEG C, after thermofixation (heat after 1 hour) light transmission also had compared with before thermofixation to a certain degree.Therefore, under the state after thermofixation, can easily find the back side of semi-conductor chip further, whether side exist fragment.

In addition, after with the technique of thermal history, such as chip join, wire bond, the visual confirmation in the space of chip join film is also become easy further.

In addition, the chip join film with cutting blade involved in the present invention is the chip join film with cutting blade being provided with described chip join film on cutting blade, it is characterized in that, the transmittance of described cutting blade under wavelength 400nm is greater than 80%.

According to described formation, the transmittance of cutting blade under wavelength 400nm is greater than 80%, therefore, under the described state being pasted on the back side of semi-conductor chip with the chip join film of cutting blade, easily can find the back side of semi-conductor chip, whether side exist fragment.

In described formation, the described transmittance of chip join film under wavelength 400nm with cutting blade before thermofixation is preferably greater than 50%.

If the described transmittance of chip join film under wavelength 400nm with cutting blade before thermofixation is greater than 50%, then under the described state being pasted on the back side of semi-conductor chip with the chip join film of cutting blade, more easily can find the back side of semi-conductor chip, whether side exist fragment.

In described formation, relative to whole organic resin constituent, described chip join film preferably contains the acrylic copolymer of more than 50 % by weight.

If relative to whole organic resin constituent, described chip join film contains the acrylic copolymer of more than 50 % by weight, then can improve the transmittance of chip join film under wavelength 400nm before thermofixation, after solidification.

In described formation, described chip join film is preferably containing acrylic copolymer, and described acrylic copolymer obtains by the ratio with more than 50 % by weight being contained the raw material monomer polymerization of alkyl acrylate or alkyl methacrylate.

If described chip join film contains acrylic copolymer, and described acrylic copolymer obtains by the ratio with more than 50 % by weight being contained the raw material monomer polymerization of alkyl acrylate or alkyl methacrylate, then can improve the transmittance of chip join film under wavelength 400nm further.

In described formation, described cutting blade is preferably made up of base material and binder layer, described binder layer contains acrylic copolymer, and described acrylic copolymer obtains by the ratio with more than 50 % by weight being contained the raw material monomer polymerization of alkyl acrylate or alkyl methacrylate.

If described binder layer contains acrylic copolymer, and described acrylic copolymer obtains by the ratio with more than 50 % by weight being contained the raw material monomer polymerization of alkyl acrylate or alkyl methacrylate, then can improve the transmittance of described binder layer under wavelength 400nm.

In described formation, described chip join film preferably containing more than at least a kind that is selected from alicyclic epoxy resin and ester ring type acid anhydrides as thermosetting resin.

If described chip join film contains be selected from alicyclic epoxy resin and ester ring type acid anhydrides more than at least a kind as thermosetting resin, then can suppress xanthochromia etc. after thermofixation, can the transmittance of chip join film under wavelength 400nm after thermofixation be kept higher.

In described formation, the loss elastic modulus of preferred described chip join film at 120 DEG C is 0.05 ~ 0.5MPa.

If the loss elastic modulus of described chip join film at 120 DEG C is more than 0.05MPa, then easily can carry out wire bond.On the other hand, if the loss elastic modulus of described chip join film at 120 DEG C is below 0.5MPa, then the cementability with adherend can be improved.

In addition, the feature of semiconductor device involved in the present invention is to use the chip join film of described middle record or manufacturing with the chip join film of cutting blade of described middle record.

In addition, the feature of the manufacture method of semiconductor device involved in the present invention is, comprising:

Preparatory process, prepares the chip join film with cutting blade of described middle record;

Bonding process, fits the chip join film of the described chip join film with cutting blade and the back side of semiconductor wafer;

Cutting action, cuts described semiconductor wafer together with described chip join film, forms the semi-conductor chip of shaped like chips;

Pickup process, picks up described semi-conductor chip from the described chip join film with cutting blade together with described chip join film; With

Chip join operation, by described chip join film semi-conductor chip described in chip join on adherend.

According to described formation, the transmittance T1 of chip join film before thermofixation under wavelength 400nm is more than 80%, therefore this chip join film be pasted on the state at the back side of semi-conductor chip and state before thermofixation (such as, state after cutting action) under, easily can find the back side of semi-conductor chip, whether side exist fragment.

In addition, the difference (T1-T2) of described T1 and described T2 is less than 20%, at 120 DEG C, therefore (heat after 1 hour) light transmission also had to a certain degree after thermofixation.Therefore, even if under the state after thermofixation, also easily can find the back side of semi-conductor chip, whether side exist fragment.

Accompanying drawing explanation

Fig. 1 is for illustrating the diagrammatic cross-section of the chip join film with cutting blade involved by an embodiment of the invention.

Fig. 2 is the diagrammatic cross-section of a manufacture method for illustration of the semiconductor device involved by present embodiment.

Nomenclature

10 with the chip join film of cutting blade

11 cutting blades

12 base materials

14 binder layers

16 chip join films

4 semiconductor wafers

5 semi-conductor chips

6 adherends

7 bonding wires

8 sealing resins

Embodiment

(the chip join film with cutting blade)

Be described for the chip join film involved by an embodiment of the invention and with the chip join film of cutting blade below.About the chip join film involved by present embodiment, the chip join film of the state with cutting blade of not fitting in the chip join film of cutting blade of following explanation can be enumerated.Therefore, below, the chip join film with cutting blade is described, chip join film is described wherein.Fig. 1 is for illustrating the diagrammatic cross-section of the chip join film with cutting blade involved by an embodiment of the invention.

As shown in Figure 1, the chip join film 10 with cutting blade has the formation being laminated with chip join film 16 on cutting blade 11.Cutting blade 11 is consisted of laminate adhesive oxidant layer 14 on the base substrate 12, and chip join film 16 is arranged on binder layer 14.

It should be noted that, in present embodiment, situation cutting blade 11 being existed to the part 14b do not covered by chip join film 16 is described, but the chip join film with cutting blade involved in the present invention is not limited to this example, also can to cover the mode of whole cutting blade at cutting blade stacked die junction film.

About chip join film 16, when the transmittance before thermofixation under wavelength 400nm being set to T1 (%) and the transmittance heated after 1 hour under wavelength 400nm at 120 DEG C is set to T2 (%), described T1 is more than 80%, be preferably more than 82%, be more preferably more than 85%.Described T1 (%) is more than 80%, therefore chip join film 16 be pasted on the state at the back side of semi-conductor chip and state before thermofixation (such as, state after cutting) under, easily can find the back side of semi-conductor chip, whether side exist fragment.

In addition, described T1 is more high more preferred, but such as can be set to less than 100%.

It should be noted that why be used in the transmittance under wavelength 400nm, its reason is the object realizing carrying out visual confirmation.

Described transmittance T1, T2 can be controlled by the material forming chip join film 16.Such as can by suitably selecting kind, the content of the thermoplastic resin forming chip join film 16; The kind of thermal curing agents, content; Median size, the content of filler control.

The transmittance of chip join film under wavelength 400nm (%) is obtained by following condition.

< determination of light transmittance condition >

Determinator: UV, visible light near infrared spectrometer V-670DS (Japanese light splitting Inc.)

Length scanning speed: 2000nm/ minute

Measurement range: 300 ~ 1200nm

Integrating sphere unit: ISN-723

Point footpath: 1cm is square

In addition, for chip join film 16, the difference (T1-T2) of described T1 and described T2 is less than 20%, is preferably less than 18%, is more preferably less than 15%.The difference (T1-T2) of described T1 and described T2 is less than 20%, at 120 DEG C, therefore (heat after 1 hour) light transmission also had to a certain degree after thermofixation.Therefore, under the state after thermofixation, also easily can find the back side of semi-conductor chip, whether side exist fragment.

In addition, described difference (T1-T2) is more little more preferred, but such as can be set as more than 0%.

In addition, for chip join film 16, the ratio T2/T1 of described T1 and described T2 is preferably in the scope of 0.75 ~ 1.0, more preferably in the scope of 0.80 ~ 0.98, preferred in the scope of 0.85 ~ 0.95 further.If described than T2/T1 in the scope of 0.75 ~ 1.0, then at 120 DEG C, after thermofixation (heat after 1 hour) light transmission also had compared with before thermofixation to a certain degree.Therefore, under the state after thermofixation, easily can find the back side of semi-conductor chip, whether side exist fragment.In addition, after with the technique of thermal history, such as chip join, wire bond, also visual confirmation can be carried out to the space of chip join film.

In addition, for chip join film 16, the loss elastic modulus at 120 DEG C is preferably 0.05 ~ 0.5MPa, is more preferably 0.07 ~ 0.4MPa, more preferably 0.09 ~ 0.3MPa.If the loss elastic modulus at 120 DEG C of chip join film 16 is more than 0.05MPa, then wire bond can be improved.On the other hand, if the loss elastic modulus at 120 DEG C of chip join film 16 is below 0.5MPa, then the cementability with adherend can be improved.

Described loss elastic modulus can be controlled by the material forming chip join film 16.Such as can by suitably selecting kind, the content of the thermoplastic resin forming chip join film 16; The kind of thermal curing agents, content; Median size, the content of filler control.

As the material forming chip join film 16, thermosetting resin can be enumerated.In addition, also can be used together thermoplastic resin and thermosetting resin.

As described thermosetting resin, can enumerate: resol, aminoresin, unsaturated polyester resin, epoxy resin, urethane resin, silicone resin or thermoset polyimide resin, ester ring type acid anhydrides etc.These resins can be used alone, or and use two or more.The particularly preferably poor epoxy resin of the ionic impurity etc. of corrosion resistant semiconductor element.In addition, as the solidifying agent of epoxy resin, preferred resol.

As long as described epoxy resin is generally as the epoxy resin that the tackiness agent of chip join purposes uses, then be not particularly limited, can use such as: the epoxy resin of the bifunctional epoxy resin such as bisphenol A-type, bisphenol-f type, bisphenol S type, bmminated bisphenol-A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorenes type, phenol novolac type, ortho-cresol novolac type, three hydroxyphenyl methane types, four (hydroxyphenyl) ethane type or polyfunctional epoxy resin or glycolylurea type, triglycidyl isocyanurate type or glycidic amine type etc.In addition, alicyclic epoxy resin can be used.They can be used alone, or combinationally use two or more.In these epoxy resin, preferred alicyclic epoxy resin.Alicyclic epoxy resin is not easily oxidized, produces xanthochromia etc. after can suppressing thermofixation, is preferred from this aspect.As described alicyclic epoxy resin, such as A Hydrogenated Bisphenol A type epoxy resin can be enumerated.

Described resol plays a role as the solidifying agent of described epoxy resin, can enumerate such as: the polycarboxylated styrenes etc. such as the novolac type resol such as phenol linear phenolic resin, phenol aralkyl resin, cresol novalac resin, tert.-butyl phenol linear phenolic resin, nonylphenol linear phenolic resin, first rank novolac type phenolic resin, poly(4-hydroxystyrene).They can be used alone, or combinationally use two or more.

About the mixing ratio of described epoxy resin and resol, it is preferred for such as carrying out cooperation in the mode reaching 0.5 ~ 2.0 equivalent relative to epoxy group(ing) 1 equivalent in described epoxy resin ingredient, the hydroxyl in resol.Be more preferably 0.8 ~ 1.2 equivalent.That is, this is because: if both mixing ratios are beyond described scope, then curing reaction carries out insufficient, and the characteristic of epoxy resin cured product is easily deteriorated.

Described ester ring type acid anhydrides plays a role as the solidifying agent of described epoxy resin, such as, can enumerate hexahydrophthalic anhydride.Described ester ring type acid anhydrides is not easily oxidized, produces xanthochromia etc. after can suppressing thermofixation, is excellent from this aspect.

As described thermoplastic resin, can enumerate: the saturated polyester resin such as polyamide resin, phenoxy resin, acrylic resin, PET, PBT, polyamide-imide resin or the fluoro-resin etc. such as natural rubber, isoprene-isobutylene rubber, synthetic polyisoprene, chloroprene rubber, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6-nylon, 6,6-nylon.These thermoplastic resins can be used alone, or combinationally use two or more.In these thermoplastic resins, particularly preferably ionic impurity is few, thermotolerance is high, can guarantee the acrylic resin of the reliability of semiconductor element.

As described acrylic resin, be not particularly limited, can enumerate, with one kind or two or more, there is the polymkeric substance (acrylic copolymer) etc. that acrylic acid ester of the straight or branched alkyl of carbonatoms less than 30, particularly carbonatoms 4 ~ 18 or the ester (alkyl acrylate or alkyl methacrylate) of methacrylic acid are composition.As described alkyl, can enumerate such as: methyl, ethyl, propyl group, sec.-propyl, normal-butyl, the tertiary butyl, isobutyl-, amyl group, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl group, iso-octyl, nonyl, different nonyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl or dodecyl etc.

Wherein, chip join film 16 is preferably containing acrylic copolymer, and described acrylic copolymer obtains by the ratio with more than 50 % by weight being contained the raw material monomer polymerization of alkyl acrylate or alkyl methacrylate.Described ratio is more preferably more than 55 % by weight, and more preferably more than 60 % by weight.If chip join film 16 is containing acrylic copolymer, and described acrylic copolymer obtains by the ratio with more than 50 % by weight being contained the raw material monomer polymerization of alkyl acrylate or alkyl methacrylate, then can improve the transmittance of chip join film 16 under wavelength 400nm.

Described ratio is more large more preferred, but such as can be set as less than 100 % by weight.

In addition, as other monomers forming described polymkeric substance, be not particularly limited, can enumerate such as: the carboxyl group-containing monomers such as vinylformic acid, methacrylic acid, carboxy ethyl acrylate, carboxypentyl acrylate, methylene-succinic acid, toxilic acid, fumaric acid or β-crotonic acid; The anhydride monomers such as maleic anhydride or itaconic anhydride; The hydroxyl monomers such as (methyl) vinylformic acid 2-hydroxy methacrylate, (methyl) vinylformic acid 2-hydroxy propyl ester, (methyl) vinylformic acid 4-hydroxybutyl, the own ester of (methyl) vinylformic acid 6-hydroxyl, (methyl) vinylformic acid 8-hydroxyl monooctyl ester, (methyl) vinylformic acid 10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) vinylformic acid 12-hydroxylauric ester or vinylformic acid (4-Hydroxymethyl-cyclo-hexyl) methyl esters; Styrene sulfonic acid, allyl sulfonic acid, 2-(methyl) acrylamide-2-methylpro panesulfonic acid, (methyl) acrylamide propane sulfonic acid, (methyl) vinylformic acid sulphur propyl ester or (methyl) propane sulfonic acid etc. are containing sulfonic group monomer; Or the phosphorous acid-based monomers such as acryloyl phosphoric acid-2-hydroxy methacrylate.

As the mixing ratio of described thermosetting resin, as long as chip join film 16 has given play to the degree of the function as thermohardening type when heating under prescribed conditions, be not particularly limited, but it is overall relative to chip join film 16, preferably in the scope of 1 ~ 60 % by weight, more preferably in the scope of 5 ~ 50 % by weight.

As the mixing ratio of described thermoplastic resin, be not particularly limited, but from the view point of flexible, transparent, overall relative to chip join film 16, be preferably more than 10 % by weight, be more preferably more than 15 % by weight.In addition, from the view point of thermotolerance, overall relative to chip join film 16, be preferably less than 100 % by weight, be more preferably less than 90 % by weight.

Wherein, relative to whole organic resin constituent, chip join film 16 preferably contains the acrylic copolymer of more than 50 % by weight, more preferably containing more than 55 % by weight, further preferably containing more than 60 % by weight.If relative to whole organic resin constituent, chip join film 16 containing the acrylic copolymer of more than 50 % by weight, then can improve the transmittance of chip join film 16 under wavelength 400nm before thermofixation, after solidification.

When making chip join film 16 occur to be cross-linked to a certain degree in advance, when making, the multi-functional compounds that carries out reacting with the functional group etc. of the molecule chain end of polymkeric substance can be added in advance as linking agent.Thereby, it is possible to the adhesion properties under raising high temperature, improve thermotolerance.

As described linking agent, existing known linking agent can be used.The particularly polyisocyanate compound such as adduct of more preferably tolylene diisocyanate, diphenylmethanediisocyanate, PPDI, 1,5-naphthalene diisocyanate, polyvalent alcohol and vulcabond.As the addition of linking agent, be usually preferably set to 0.05 ~ 7 weight part relative to described polymkeric substance 100 weight part.When the amount of linking agent is more than 7 weight part, bonding force declines, therefore not preferred.On the other hand, during lower than 0.05 weight part, cohesive force is not enough, therefore not preferred.In addition, as required can containing other multi-functional compounds such as epoxy resin together with such polyisocyanate compound.

In addition, suitably filler can be coordinated according to its purposes in chip join film 16.The cooperation of described filler can be given electroconductibility, improved thermal conductivity, adjustable elastic modulus, etc.As described filler, mineral filler and organic filler can be enumerated, but from the view point of the characteristic such as raising, the adjustment of melt viscosity, thixotropic imparting of the raising of operability, electrical conductivity, preferred mineral filler.As the shape of described filler, be not particularly limited, but preferably spherical.As described mineral filler, be not particularly limited, can enumerate such as, aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesiumcarbonate, Calucium Silicate powder, Magnesium Silicate q-agent, calcium oxide, magnesium oxide, aluminum oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica, amorphous silica etc.They can be used alone, and also two or more kinds may be used.From the view point of raising electrical conductivity, preferential oxidation aluminium, aluminium nitride, boron nitride, crystalline silica, amorphous silica.In addition, high from the view point of the balance of above-mentioned each characteristic, preferred crystalline silica or amorphous silica.In addition, in order to realize the object such as the imparting of electroconductibility, the raising of electrical conductivity, as mineral filler, conductive material (conductive filler material) can also be used.As conductive filler material, can enumerate: silver, aluminium, gold, copper, nickel, electroconductibility alloy etc. are made the metal oxide such as metal powder, aluminum oxide, amorphous carbon black, graphite etc. after spherical, needle-like, flake.

The median size of described filler is preferably in the scope of 0.001 μm ~ 0.8 μm, more preferably in the scope of 0.005 μm ~ 0.7 μm, preferred in the scope of 0.01 μm ~ 0.5 μm further.If containing the mineral filler of median size in the scope of 0.001 μm ~ 0.8 μm, then the transmittance of chip join film 16 under wavelength 400nm can keep higher.It should be noted that, in this specification sheets, the median size of filler is by luminosity formula size-grade distribution meter (HORIBA system, device name; LA-910) value obtained.

As the addition of described filler, overall relative to chip join film 16, preferably 0 ~ 50 % by weight, more preferably 1 ~ 30 % by weight.

It should be noted that, can also according to suitably coordinating other additives as required except described filler in chip join film 16.Other additive conducts, can enumerate such as: fire retardant, silane coupling agent or ion capturing agent etc.As described fire retardant, can enumerate such as: ANTIMONY TRIOXIDE SB 203 99.8 PCT, antimony pentaoxide, brominated epoxy resin etc.These materials may be used singly or two or more in combination.As described silane coupling agent, can enumerate such as: β-(3,4-epoxycyclohexyl) ethyl trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxypropyl diethoxy silane etc.These compounds may be used singly or two or more in combination.As described ion capturing agent, hydrotalcite, bismuth hydroxide etc. can be enumerated.These materials may be used singly or two or more in combination.

The thickness of chip join film 16 (being total thickness when duplexer) is not particularly limited, but from the view point of transmittance, preferably 5 ~ 100 μm, more preferably 5 ~ 60 μm, preferably 5 ~ 30 μm further.

As mentioned above, cutting blade 11 has the formation being laminated with binder layer 14 on the base substrate 12.

The transmittance of cutting blade 11 under wavelength 400nm is preferably greater than 80%, more preferably greater than 82%, is preferably greater than 85% further.If the transmittance of cutting blade 11 under wavelength 400nm is greater than 80%, then under the state being pasted on the back side of semi-conductor chip at the chip join film 10 with cutting blade, easily can finds the back side of semi-conductor chip, whether side exist fragment.

The transmittance of cutting blade under wavelength 400nm is obtained by the method same with the transmittance of chip join film under wavelength 400nm.

Described transmittance can be controlled by the material forming cutting blade 11.Such as can by suitably selecting the material, the content that form base material 12; The kind, the content that form the material of binder layer 14 control.

Base material 12 becomes the intensity parent of the chip join film 10 with cutting blade.Can enumerate such as: Low Density Polyethylene, linear polyethylene, medium-density polyethylene, high density polyethylene(HDPE), ultra-low density polyethylene, polypropylene random copolymer, polypropylene block copolymer, homopolymer polypropylene, polybutene, the polyolefine such as polymethylpentene, vinyl-vinyl acetate copolymer, ionomer resin, ethene-(methyl) acrylic copolymer, ethene-(methyl) acrylate is (random, alternately) multipolymer, ethylene-butene copolymer, ethylene-hexene co-polymers, urethane, polyethylene terephthalate, the polyester such as PEN, polycarbonate, polyimide, polyether-ether-ketone, polyetherimide, polymeric amide, fully aromatic polyamide, polyphenylene sulfide, aromatic poly amide (paper), glass, woven fiber glass, fluorine resin, polyvinyl chloride, polyvinylidene dichloride, cellulosic resin, polyorganosiloxane resin, metal (paper tinsel) etc.Base material 12, when binder layer 14 described later is formed by radiation curable tackiness agent, is preferably formed by the material of this radiation of transmission.

In order to improve and the adaptation of adjoining course and retentivity etc., usual surface treatment can be carried out in the surface of base material 12, such as chromic acid process, ozone exposure, fire exposure, high-voltage electric shock exposure, ionizing ray process etc. chemistry or physical treatment, silane coupling agent (such as, adhesive substance described later) coating process.Described base material 12 can the suitable of the same race or foreign material of choice for use, as required also can be used in combination by multiple material.

The transmittance of base material 12 under wavelength 400nm is preferably more than 80%, is more preferably more than 82%.Transmittance under wavelength 400nm be more than 80% base material 12 can obtain by suitably selecting to form the material of base material 12.

In addition, the transmittance of base material 12 under wavelength 400nm is more high more preferred, but such as can be set as less than 100%.

The transmittance of base material under wavelength 400nm obtains based on the method same with the transmittance of chip join film under wavelength 400nm.

The thickness of base material 12 can suitably be determined without particular limitation, but is generally about 5 ~ 200 μm.Wherein, from the view point of transmittance, be preferably 50 ~ 150 μm.

The tackiness agent used in formation as binder layer 14, is not particularly limited, and such as, can use the pressure-sensitive adhesive that acrylic adhesive, elastomeric adhesive etc. are general.As described pressure-sensitive adhesive, the electronic unit polluted from the taboo such as semiconductor wafer or glass, the viewpoint such as the clean detergency that utilizes the organic solvent such as ultrapure water or alcohol, the preferably acrylic adhesive of polymkeric substance based on acrylic acid polymer.

As described acrylic acid polymer, can enumerate and such as use (methyl) alkyl acrylate (such as, methyl esters, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, secondary butyl ester, the tert-butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2-ethylhexyl, different monooctyl ester, the ninth of the ten Heavenly Stems ester, the last of the ten Heavenly stems ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, cetyl ester, stearyl, the carbonatoms 1 ~ 30 of the alkyl such as eicosyl ester, the particularly straight-chain of carbonatoms 4 ~ 18 or the alkyl ester etc. of branched) and (methyl) acrylate base ester is (such as, ring pentyl ester, cyclohexyl etc.) in one or more acrylic acid polymer etc. as monomer component.It should be noted that, (methyl) acrylate refers to acrylate and/or methacrylic ester, and " (methyl) " of the present invention all has same implication.

Wherein, binder layer 14 is preferably containing acrylic copolymer, and described acrylic copolymer obtains by the ratio with more than 50 % by weight being contained the raw material monomer polymerization of alkyl acrylate or alkyl methacrylate (ester of acrylic acid ester or methacrylic acid).Described ratio is more preferably more than 55 % by weight, and more preferably more than 60 % by weight.If binder layer 14 is containing acrylic copolymer, and described acrylic copolymer obtains by the ratio with more than 50 % by weight being contained the raw material monomer polymerization of alkyl acrylate or alkyl methacrylate, then can improve the transmittance of binder layer 14 under wavelength 400nm.

In order to improve cohesive force, thermotolerance etc., described acrylic acid polymer can as required and containing can with the unit corresponding to other monomer components of above-mentioned (methyl) alkyl acrylate or cycloalkyl ester copolymerization.As such monomer component, can enumerate such as: the carboxyl group-containing monomer such as vinylformic acid, methacrylic acid, (methyl) carboxy ethyl acrylate, (methyl) carboxypentyl acrylate, methylene-succinic acid, toxilic acid, fumaric acid, β-crotonic acid; The anhydride monomers such as maleic anhydride, itaconic anhydride; The hydroxyl monomers such as (methyl) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) vinylformic acid-4-hydroxybutyl, the own ester of (methyl) vinylformic acid-6-hydroxyl, (methyl) vinylformic acid-8-hydroxyl monooctyl ester, (methyl) vinylformic acid-10-hydroxyl ester in the last of the ten Heavenly stems, (methyl) vinylformic acid-12-hydroxylauric ester, (methyl) vinylformic acid-(4-hydroxymethylcyclohexyl) methyl esters; Styrene sulfonic acid, allyl sulphonic acid, 2-(methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid, (methyl) vinylformic acid sulphur propyl ester, (methyl) propane sulfonic acid etc. are containing sulfonic group monomer; The phosphorous acid-based monomers such as 2-hydroxyethyl acryloyl phosphate; Acrylamide; Vinyl cyanide etc.These copolymerisable monomer compositions can use one or more.The usage quantity of these copolymerisable monomers is preferably less than 40 % by weight of whole monomer component.

In addition, in order to be cross-linked, described acrylic acid polymer also can as required containing multi-functional monomer etc. as comonomer composition.As so multi-functional monomer, such as hexylene glycol two (methyl) acrylate can be enumerated, (gathering) ethylene glycol bisthioglycolate (methyl) acrylate, (gathering) propylene glycol two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, tetramethylolmethane two (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, epoxy (methyl) acrylate, polyester (methyl) acrylate, carbamate (methyl) acrylate etc.These multi-functional monomers also can use a kind of or two or more.From viewpoints such as adhesion characteristics, the usage quantity of multi-functional monomer is preferably less than 30 % by weight of whole monomer component.

Described acrylic acid polymer can by obtaining single monomer or two or more polymerize monomer mixtures.Polymerization can be undertaken by any-modes such as solution polymerization, letex polymerization, mass polymerization, suspension polymerizations.From the viewpoint of the adherend etc. of preventing pollution cleaning, the content of preferred low molecular weight substance is little.From this viewpoint, the number-average molecular weight of acrylic acid polymer is preferably more than 100,000, and further preferably 200,000 ~ about 3,000,000, particularly preferably 300,000 ~ about 1,500,000.

In addition, in order to the number-average molecular weight of the acrylic acid polymer etc. of polymkeric substance based on improving, in described tackiness agent, suitably external crosslinker can be used.As the concrete grammar of outside cross-linking method, can enumerate: add the method that the so-called linking agents such as polyisocyanate compound, epoxy compounds, aziridine cpd, melamine series linking agent carry out reacting.When using external crosslinker, its usage quantity according to the balance with the base polymer that should be cross-linked and suitably can be determined as the use of tackiness agent.Generally speaking, relative to described base polymer 100 weight part, preferably coordinate below about 5 weight parts, more preferably coordinate 0.1 ~ 5 weight part.In addition, as required, except described composition, the additives such as existing known various tackifier, antiaging agent can also be used in tackiness agent.

Binder layer 14 can utilize radiation curable tackiness agent to be formed.Radiation curable tackiness agent can make degree of crosslinking increase by irradiation ultraviolet radiation israds, thus easily makes its bounding force decline.

Such as, by making ray curing binder layer 14 solidify with conforming to the wafer adhesive portion 16a of the chip join film 16 shown in Fig. 1, the described part 14a that bounding force significantly declines can easily be formed.The described part 14a that bounding force declines due to solidification is pasted with chip join film 16, and therefore the described part 14a of binder layer 14 and the interface of chip join film 16 have the character easily peeled off when picking up.On the other hand, the part of non-illumination radiation line has sufficient bounding force, forms described part 14b.Described part 14b can firmly fix wafer ring.

It should be noted that, when in the mode covering whole cutting blade on cutting blade when stacked chip join film, can at the outer peripheral portion fixed wafer ring of chip join film.

Radiation curable tackiness agent can use without particular limitation to be had carbon-to-carbon double bond israds solidified nature functional group and demonstrates fusible tackiness agent.As radiation curable tackiness agent, can illustrate such as: the radiation curable tackiness agent being combined with the monomer component of radiation curing, the addition type of oligopolymer composition in the common pressure-sensitive adhesives such as described acrylic adhesive, elastomeric adhesive.

As the monomer component of radiation curing joined together, can enumerate such as: oligourethane, carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, tetramethylol methane four (methyl) acrylate, tetramethylolmethane three (methyl) acrylate, tetramethylolmethane four (methyl) acrylate, Dipentaerythritol monohydroxy five (methyl) acrylate, Dipentaerythritol six (methyl) acrylate, BDO two (methyl) acrylate etc.In addition, the oligopolymer composition of radiation curing can enumerate the various oligopolymer such as carbamate system, polyethers system, Polyester, polycarbonate-based, polyhutadiene system, and its molecular weight is suitable in the scope of about 100 ~ 30000.The monomer component of radiation curing or the use level of oligopolymer composition, the amount suitably can determining to make the bounding force of binder layer to decline according to the kind of described binder layer.Generally speaking, relative to base polymer 100 weight part such as acrylic acid polymer forming tackiness agent, such as, be about 5 ~ 500 weight parts, preferably 40 ~ 150 weight parts.

In addition, as radiation curable tackiness agent, except the radiation curable tackiness agent of the described addition type illustrated, also can enumerate: be used in polymer lateral chain or main chain or the radiation curable tackiness agent of the inherent type of polymkeric substance based on polymkeric substance that main chain terminal has a carbon-to-carbon double bond.With regard to the radiation curable tackiness agent of inherent type, its oligopolymer composition etc. not needing containing or do not contain in a large number as low molecular composition, therefore oligopolymer composition etc. can not through time move in tackiness agent, thus the binder layer of stable Rotating fields can be formed, therefore preferably.

The described base polymer with carbon-to-carbon double bond can use without particular limitation to be had carbon-to-carbon double bond and has fusible base polymer.As such base polymer, preferably using acrylic acid polymer as the polymkeric substance of basic framework.As the basic framework of acrylic acid polymer, described illustrative acrylic acid polymer can be enumerated.

The method introducing carbon-to-carbon double bond in described acrylic acid polymer is not particularly limited, and can adopt various method, but on polymer lateral chain, introduces carbon-to-carbon double bond ratio in molecular designing be easier to.Such as can enumerate following method: after the monomer making to have functional group in advance and acrylic acid polymer copolymerization, make to have can with the compound of the functional group of this functional group reactions and carbon-to-carbon double bond, under the state of radiation curing keeping carbon-to-carbon double bond, carry out condensation or addition reaction.

As the combination example of these functional groups, can enumerate: carboxyl and epoxy group(ing), carboxyl and '-aziridino, hydroxyl and isocyanate group etc.In the combination of these functional groups, from the view point of easy following response, the combination of preferred hydroxyl and isocyanate group.In addition, as long as have the combination of the acrylic acid polymer of carbon-to-carbon double bond described in being generated by the combination of these functional groups, then functional group can any side in acrylic acid polymer and described compound, with regard to described preferably combination, the situation that preferred acrylic acid polymer has hydroxyl, described compound has isocyanate group.Now, as the isocyanate compound with carbon-to-carbon double bond, such as methacryloyl isocyanic ester, 2-methylacryoyloxyethyl isocyanic ester, a pseudoallyl-alpha, alpha-dimethylbenzyl isocyanic ester etc. can be enumerated.In addition, as acrylic acid polymer, the acrylic acid polymer copolymerization such as the ether based compound of described illustrative hydroxyl monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl base ether obtained can be used.

The radiation curable tackiness agent of described inherent type, there is described in can be used alone the base polymer (particularly acrylic acid polymer) of carbon-to-carbon double bond, also can coordinate monomer component, the oligopolymer composition of described radiation curing under the degree not damaging characteristic.The oligopolymer composition of radiation curing etc. usually relative to base polymer 100 weight part in the scope of 30 weight parts, the preferably scope of 0 ~ 10 weight part.

In described radiation curable tackiness agent, when by ultraviolet etc. when solidification containing Photoepolymerizationinitiater initiater.As Photoepolymerizationinitiater initiater, can enumerate such as: the α-one alcohol based compounds such as 4-(2-hydroxyl-oxethyl) phenyl (2-hydroxyl-2-propyl group) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2-methyl-2-hydroxypropiophenonepreparation, 1-hydroxycyclohexylphenylketone; Methoxyacetophenone, 2,2 '-dimethoxy-2-phenyl acetophenone, 2, the methyl phenyl ketone based compounds such as 2 '-diethoxy acetophenone, 2-methyl isophthalic acid-[4-(methylthio group) phenyl]-2-morpholino propane-1-ketone; The benzoin ether based compounds such as ethoxybenzoin, benzoin iso-propylether, anisoin methyl ether; The ketal based compounds such as benzil dimethyl ketal; The aromatic sulfonyl based compounds such as 2-naphthalic sulfonic chloride; The photolytic activity oxime compounds such as 1-benzophenone-1,1-propanedione-2-(adjacent ethoxy carbonyl) oxime; Benzophenone, benzoyl phenylformic acid, 3, the benzophenone based compounds such as 3 '-dimethyl-4-methoxy benzophenone; The thioxanthone based compounds such as thioxanthone, CTX, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-bis-clopenthixal ketones, 2,4-diethyl thioxanthones, 2,4-diisopropylthioxanthone; Camphorquinone; Halogenated ketone; Acylphosphine oxide; Acyl phosphonate etc.Relative to base polymer 100 weight part such as acrylic acid polymer forming tackiness agent, the use level of Photoepolymerizationinitiater initiater is such as about 0.05 weight part ~ 20 weight part.

In addition, as radiation curable tackiness agent, can enumerate such as elastomeric adhesive, acrylic adhesive etc. disclosed in Japanese Laid-Open Patent Publication 60-196956 publication, described elastomeric adhesive, acrylic adhesive etc. comprise: the polyaddition compound with two or more unsaturated link(age), the photopolymerizable compound such as organoalkoxysilane with epoxy group(ing); With Photoepolymerizationinitiater initiaters such as carbonyl compound, organosulfur compound, superoxide, amine, salt based compounds.

In the binder layer 14 of radiation curable, can as required containing the compound painted by irradiation with radiation.By containing the compound painted by irradiation with radiation in binder layer 14, can only make the colored parts after by irradiation with radiation.That is, can by painted for the part 14a corresponding with wafer adhesive portion 16a shown in Fig. 1.Thus, directly can judge the whether illuminated radiation of binder layer 14 by visual, can easily identify wafer adhesive portion 16a, the stickup of workpiece is also easy.In addition, when utilizing optical sensor etc. to detect semi-conductor chip, its accuracy of detection is high, thus does not produce mishandle when the pickup of semi-conductor chip.

The painted compound by illumination radiation line, but for colourless before illumination radiation line or light by illumination radiation line and coloured compound.As the preferred concrete example of described compound, leuco dye (ロイコ dyestuff) can be enumerated.As leuco dye, usual triphenylmethane, Material of Fluoran, phenothiazines, auramine class, spiro-pyrans class leuco dye preferably can be used.Can enumerate particularly: 3-[N-(p-methylphenyl is amino)]-7-anilino fluorane, 3-[N-(p-methylphenyl)-N-methylamino]-7-anilino fluorane, 3-[N-(p-methylphenyl)-N-ethylamino]-7-anilino fluorane, 3-diethylin-6-methyl-7-anilino fluorane, crystal violet lactone, 4,4 '; 4 "-three (dimethylamino) triphenylcarbinol, 4,4 ', 4 "-three (dimethylamino) triphenyl methane etc.

As the preferred developer used together with these leuco dyes, the electron acceptor(EA)s such as the prepolymer of the resol all the time used, aromatic derivant carboxylate, atlapulgite can be enumerated, in addition, when tonal variation will be made, various chromogenic reagent can be combinationally used.

Like this by illumination radiation line and painted compound, first can be dissolved in after in organic solvent etc. and cover in radiation curable tackiness agent again, in addition, also can comprise in the adhesive in fine powder form.It is less than 10 % by weight that the usage ratio of this compound is desirably in binder layer 14, preferably 0.01 ~ 10 % by weight, more preferably 0.5 ~ 5 % by weight.If the ratio of this compound is more than 10 % by weight, be then irradiated to the radiation of binder layer 14 by this compound taken in excess, therefore the solidification of the described part 14a of binder layer 14 is insufficient, and bounding force declines insufficient sometimes.On the other hand, in order to painted fully, the ratio of this compound is preferably made to be more than 0.01 % by weight.

When forming binder layer 14 by radiation curable tackiness agent, irradiation with radiation can be carried out in the mode of the bounding force of other part 14b of bounding force < of part 14a described in binder layer 14 to a part for binder layer 14.

As the method forming described part 14a at binder layer 14, can enumerate: formed after radiation-curable adhesive layer 14 on the base substrate 12, to the described part 14a illumination radiation line method that makes it solidify partly.The irradiation with radiation of local can be undertaken by the photomask being formed with the pattern corresponding with the part beyond chip join film 16 wafer adhesive portion 16a.In addition, the method etc. that point-like irradiation ultraviolet radiation is cured can be enumerated.The formation of the binder layer 14 of radiation curable can be undertaken by being transferred on base material 12 by the binder layer of the radiation curable be arranged on partition.The radiation curing of local also can carry out the binder layer 14 of the radiation curable be arranged on partition.

In addition, when forming binder layer 14 by radiation curable tackiness agent, the whole of the part beyond to the part corresponding with wafer adhesive portion 16a of at least one side of base material 12 or local can be used to carry out the base material of shading, and carry out irradiation with radiation after forming radiation-curable adhesive layer 14 on the substrate, make corresponding with wafer adhesive portion 16a partially cured, thus form the described part 14a that bounding force declines.As light screening material, the material that can become photomask can be made by printing or evaporation etc. in support film.By described manufacture method, the chip join film 10 with cutting blade effectively can be manufactured.

It should be noted that, when carrying out irradiation with radiation because of oxygen produce solidification obstacle when, preferably utilize any means from the surperficial isolating oxygen (air) of radiation-curable adhesive layer 14.As the method for isolating oxygen, can enumerate such as: with partition by the method for the surface coverage of binder layer 14 or the method etc. of irradiation of carrying out ultraviolet israds in nitrogen atmosphere.

The thickness of binder layer 14 is not particularly limited, but from the viewpoint of have concurrently prevent chip cutting face defect, chip join film 16 fixing maintenance etc., be preferably 1 μm ~ about 50 μm.More preferably 2 μm ~ 30 μm, further preferably 5 μm ~ 25 μm.

The transmittance of binder layer 14 under wavelength 400nm is preferably more than 80%, is more preferably more than 82%.Transmittance under wavelength 400nm be more than 80% binder layer 14 can obtain by suitably selecting to form the material of binder layer 14.

In addition, the transmittance of binder layer 14 under wavelength 400nm is more high more preferred, but such as can be set as less than 100%.

The transmittance of binder layer under wavelength 400nm obtains based on the method same with the transmittance of chip join film under wavelength 400nm.

The transmittance of chip join film 10 under wavelength 400nm with cutting blade before thermofixation, is preferably more than 50%, is more preferably more than 55%, more preferably more than 60%.If the transmittance of chip join film 10 under wavelength 400nm with cutting blade before thermofixation is greater than 50%, under the state being then pasted on the back side of semi-conductor chip at the chip join film 10 with cutting blade, more easily can find the back side of semi-conductor chip, whether side exist fragment.

Be the method for more than 50% as the transmittance of chip join film 10 under wavelength 400nm made with cutting blade, can enumerate: as base material 12, select transmittance under wavelength 400nm be certain more than base material, as tackiness agent 14, select transmittance under wavelength 400nm be certain more than tackiness agent, and as chip join film 16, select the transmittance under wavelength 400nm be certain more than the method for chip join film.

In addition, the transmittance of chip join film 10 under wavelength 400nm with cutting blade is more high more preferred, but such as can be set as less than 100%.

The transmittance of chip join film under wavelength 400nm with cutting blade obtains based on the method same with the transmittance of chip join film under wavelength 400nm.

Chip join film 16 with the chip join film 10 of cutting blade preferably protects (not shown) by partition.Partition has the function as the protecting materials of protect IC junction film 16 before supply practical application.In addition, partition can also use as to support base material during binder layer 14 transfer printing chip join film 16.Peel off when partition pastes workpiece (semiconductor wafer) on the chip join film 16 to the chip join film 10 with cutting blade.As partition, polyethylene terephthalate (PET), polyethylene, polypropylene can be used, also can use the plastic film or paper etc. that have been carried out surface application by strippers such as fluorine-containing stripper, chain alkyl esters of acrylic acid strippers.

The chip join film 10 with cutting blade involved by present embodiment such as makes as described below.

First, base material 12 can by existing known film film forming.As this film, can illustrate such as: be rolled into the teeming practice in embrane method, organic solvent, blowing extrusion molding, T-shaped extrusion, coetrusion, dry lamination method etc. in enclosed system.

Then, after applying adhesive composition solution forms film on the base substrate 12, this film is carried out in predefined conditions drying (carrying out heat cross-linking as required), form binder layer 14.As coating method, be not particularly limited, can enumerate such as: the coating of roller coat, silk screen, gravure coating etc.In addition, as drying conditions, can for such as to carry out in drying temperature 80 DEG C ~ 150 DEG C, the scope of 0.5 minute ~ 5 minutes time of drying.In addition, also can, on partition after applying adhesive composition formation film, under described drying conditions, make dried coating film and form binder layer 14.Afterwards, binder layer 14 is pasted on base material 12 together with partition.Thus, cutting blade 11 is made.

Chip join film 16 is making as described below such as.

First, the adhesive compound solution of the formation material as chip join film 16 is made.This adhesive compound solution is combined with described resin, other various additives etc. as required as previously mentioned.

Then, form film by adhesive compound solution coat to base material partition reaches predetermined thickness, then make this dried coating film in predefined conditions, form chip join film 16.As coating process, be not particularly limited, can enumerate such as: the coating of roller coat, silk screen, gravure coating etc.In addition, as drying conditions, can for such as to carry out in drying temperature 70 DEG C ~ 160 DEG C, the scope of 1 minute ~ 5 minutes time of drying.In addition, also can, on partition after coating adhesive composition solution formation film, under described drying conditions, make dried coating film and form chip join film 16.Afterwards, adhesive layer is pasted on base material partition together with partition.

Then, from cutting blade 11 and chip join film 16, peel off partition respectively, both fit by the mode becoming binding face with adhesive layer 14 and chip join film 16.Laminating can be undertaken by such as crimping.Now, laminating temperature is not particularly limited, such as preferably 30 DEG C ~ 50 DEG C, more preferably 35 DEG C ~ 45 DEG C.In addition, line pressure is not particularly limited, such as preferred 0.1kgf/cm ~ 20kgf/cm, more preferably 1kgf/cm ~ 10kgf/cm.Thus, the chip join film 10 with cutting blade can be obtained.

(manufacture method of semiconductor device)

Then, the manufacture method of semiconductor device is described.

Below, the manufacture method of the semiconductor device of the chip join film 10 employed with cutting blade is described.But, in the present invention, also can not use and use chip join film 16 ground to manufacture semiconductor device with the chip join film 10 of cutting blade.Now, do not carry out fitting cutting blade 11 and obtain the operation of the chip join film 10 with cutting blade at chip join film 16, then can be same with the manufacture method of the semiconductor device of the chip join film 10 employed with cutting blade.Therefore, below the manufacture method of the semiconductor device of the chip join film 10 employed with cutting blade is described.

The manufacture method of the semiconductor device involved by present embodiment comprises:

Preparatory process, the chip join film with cutting blade described in preparation;

In the manufacture method of the semiconductor device involved by present embodiment, first, the chip join film 10 (preparatory process) with cutting blade is prepared.For the chip join film 10 with cutting blade, after the partition be arranged on arbitrarily on chip join film 16 is suitably peeled off, use as described below.Below, with reference to Fig. 1 and Fig. 2, be described to use the situation of the chip join film 10 with cutting blade.

First, semiconductor wafer 4 is crimped on the semiconductor wafer adhesive portion 16a with the chip join film 16 in the chip join film 10 of cutting blade, makes its bonding maintenance and fix (adhering processes).This operation is carried out while with extruding means extruding such as crimping rollers.Sticking temperature during installation is not particularly limited, such as preferred in the scope of 40 ~ 90 DEG C.

Then, the cutting (cutting action) of semiconductor wafer 4 is carried out.Thus, semiconductor wafer 4 is cut into predetermined size and singualtion, manufactures semi-conductor chip 5.The method of cutting is not particularly limited, such as, conventionally carry out from the circuit face side of semiconductor wafer 4.In addition, in this operation, such as can adopt incision to cutting blade chip join film 10 place, be called the cutting mode etc. entirely cut.The cutting unit used in this operation is not particularly limited, and can use existing known cutting unit.In addition, because semiconductor wafer 4 is adhesively fixed by the chip join film 10 with cutting blade, chip defect or chip therefore can be suppressed to disperse, also can suppress the breakage of semiconductor wafer 4 simultaneously.

In present embodiment, using and being laminated with the front transmittance T1 (%) under wavelength 400nm of thermofixation is the chip join film 10 with cutting blade that the chip join film 16 of more than 80% and the transmittance under wavelength 400nm are greater than the cutting blade 11 of 80%.Therefore, after cutting, can easily find the back side of semi-conductor chip from cutting blade 11 side, whether side exist fragment.The presence or absence of fragment such as can confirm by using opticmicroscope.

Then, in order to be peeled off by the semi-conductor chip 5 be adhesively fixed on the chip join film 10 of cutting blade, carry out the pickup (pickup process) of semi-conductor chip 5.Pick-up method is not particularly limited, and can use existing known various method.Such as, can enumerate and from chip join film 10 side with cutting blade, each semi-conductor chip 5 be pushed away with pin, be picked up the method etc. of the semi-conductor chip 5 be pushed by pickup device.

As pickup conditions, from the view point of preventing fragment, preferably making pin to push away speed is 5 ~ 100mm/ second, more preferably 5 ~ 10mm/ second.

At this, when binder layer 2 is radiation curable, picks up and carry out after to this binder layer 2 illumination radiation line.Thus, the bounding force of binder layer 2 pairs of chip join films 16 reduces, and the stripping of semi-conductor chip 5 becomes easy.As a result, can pick up when not damaging semi-conductor chip 5.The conditions such as exposure intensity during irradiation with radiation, irradiation time are not particularly limited, and can suitably set as required.In addition, as the light source for irradiation with radiation, known light source can be used.It should be noted that, make it solidify to binder layer illumination radiation line in advance, and when the binder layer after this solidification and chip join film being fitted, do not need irradiation with radiation herein.

Then, the semi-conductor chip 5 of pickup is adhesively fixed (chip join operation) on adherend 6 by chip join film 16.As adherend 6, the semi-conductor chip etc. lead frame, TAB film, substrate can enumerated or make in addition.Adherend 6 can be such as the deformation type adherend of easily distortion, also can be on-deformable non-deformed type adherend (semiconductor wafer etc.).

As described substrate, existing known substrate can be used.In addition, as described lead frame, the organic substrate that can use the die-attach area such as Cu lead frame, 42 alloy lead wire frames or be made up of glass epoxide, BT (bismaleimide-triazine), polyimide etc.But, the invention is not restricted to these, be also included within and semiconductor element be installed and be electrically connected rear operable circuit card with semiconductor element.

Then, because chip join film 16 is thermohardening type, therefore by being heating and curing, semi-conductor chip 5 being bonded and fixed to adherend 6, making high-temperature capability improve (heat curing processes).Can carry out under the Heating temperature of 80 ~ 200 DEG C, preferably 100 ~ 175 DEG C, more preferably 100 ~ 140 DEG C.In addition, can carry out under the heat-up time of 0.1 ~ 24 hour, preferably 0.1 ~ 3 hour, more preferably 0.2 ~ 1 hour.In addition, be heating and curing and can carry out under an increased pressure.As pressurized conditions, preferably 1 ~ 20kg/cm ²scope in, more preferably 3 ~ 15kg/cm ²scope in.Add being heating and curing of pressure such as to carry out in the chamber being filled with inactive gas.It should be noted that, by chip join film 16 semi-conductor chip 5 is bonded and fixed to substrate etc. and the object obtained can be used in Reflow Soldering operation.

For the chip join film 16 of present embodiment, described T1 (transmittance before thermofixation under wavelength 400nm) is less than 20% with the difference (T1-T2) of described T2 (heating the transmittance under wavelength 400nm after 1 hour at 120 DEG C).Therefore, also there is after thermofixation light transmission to a certain degree.Therefore, under the state after thermofixation, also easily can find the back side of semi-conductor chip, whether side exist fragment.

About the shear bond power of the chip join film 16 after thermofixation, relative to adherend 6, be preferably more than 0.2MPa, more preferably 0.2 ~ 10MPa.If the shear bond power of chip join film 16 is at least more than 0.2MPa, then when wire bond operation, can not due to the ultrasonic vibration in this operation, heating and make chip join film 16 produce shearing strain with the bonding plane of semi-conductor chip 5 or adherend 6.That is, semi-conductor chip can not move because of ultrasonic vibration during wire bond, can prevent wire bond success ratio from reducing thus.

Then, as shown in Figure 2, bonding wire 7 is used to be electrically connected (wire bond operation) with the electrode pad (not shown) on semi-conductor chip 5 front end of the portion of terminal (inner lead) of adherend 6 as required.As described bonding wire 7, such as gold thread, aluminum steel or copper cash etc. can be used.Temperature when carrying out wire bond is 80 DEG C ~ 250 DEG C, the scope of preferably 80 DEG C ~ 220 DEG C.In addition, its heat-up time is several seconds ~ several minutes.Wiring, being heated under the state in described temperature range, can be carried out with crimping of pressurization by combinationally using hyperacoustic vibrational energy.This operation can be carried out when not carrying out the thermofixation of chip join film 16.

Then, as shown in Figure 2, as required, sealing resin 8 is utilized to be sealed (sealing process) by semi-conductor chip 5.This operation is carried out to protect the semi-conductor chip 5 and bonding wire 7 etc. be mounted on adherend 6.This operation is by being undertaken sealing resin shaping with mould.As sealing resin 8, such as, use epoxy resin.Heating temperature during resin seal carries out 60 seconds ~ 90 seconds usually at 175 DEG C, but, the present invention is not limited thereto, such as, also can carry out several minutes solidification at 165 DEG C ~ 185 DEG C.Thus, sealing resin 8 is solidified, and by chip join film 16 by semi-conductor chip 5 and adherend 6 set.That is, in the present invention, even if when not carrying out after fixing operation described later, in this operation, also can carry out set by chip join film 16, thus the manufacturing time reducing worker ordinal number and shortening semiconductor device can be contributed to.In addition, in this sealing process, also can adopt the method (for example, referring to Japanese Unexamined Patent Publication 2013-7028 publication) of embedded with semi-conductor chip 5 in the sheet for sealing of sheet.

Then, heating as required, solidifying solidifying insufficient sealing resin 8 in described sealing process completely (after fixing operation).Even if when sealing process chips junction film 16 does not carry out complete thermofixation, also can complete thermofixation together with sealing resin 8 at this operation chips junction film 16.Heating temperature in this operation is different according to the difference of the kind of sealing resin, and such as, in the scope of 165 DEG C ~ 185 DEG C, heat-up time is 0.5 hour ~ 8 hours.

It should be noted that, in the manufacture method of the semiconductor device involved by present embodiment, also can after the interim set based on chip join operation, without the heat treated based on chip join film 16 heat curing processes and carry out wire bond, then utilize sealing resin 8 to be sealed by semi-conductor chip 5, sealing resin 8 is solidified (after fixing).Now, shear bond power during interim set about chip join film 16, is preferably more than 0.2MPa relative to adherend 6, more preferably 0.2 ~ 10MPa.If shear bond power during the interim set of chip join film 16 is at least more than 0.2MPa, even if then when carrying out wire bond operation without when heating process, also can not due to the ultrasonic vibration in this operation, heating and make chip join film 16 produce shearing strain with the bonding plane of semi-conductor chip 5 or adherend 6.That is, semi-conductor chip can not move because of ultrasonic vibration during wire bond, can prevent wire bond success ratio from reducing thus.It should be noted that, interim set refers to, in order to not produce obstacle in operation afterwards, not reach the degree of the state that the curing reaction that makes chip join film carries out completely, this chip join film is made to solidify the state of (reaching semi-cured state) and fixing semi-conductor chip 5.It should be noted that, when without when carrying out wire bond when the heat curing processes of the heat treated based on chip join film, the operation of above-mentioned after fixing is equivalent to the heat curing processes in this specification sheets.

It should be noted that, for the chip join film with cutting blade of the present invention, be also suitable for carrying out three-dimensional situation of installing by stacked for multiple semi-conductor chip.Now, can stacked die junction film and separator between semi-conductor chip, also can between semi-conductor chip not stacked separator and only stacked die junction film, suitably can change according to manufacturing condition, purposes etc.

Embodiment

Below, the preferred embodiment of the invention is described in detail illustratively.But main idea of the present invention, as long as no the record of being particularly limited to property, is not just only limited within the scope of this by the material recorded in this embodiment, use level etc.It should be noted that, below, part refers to weight part.

The making > of < chip join film

(embodiment 1)

In methylethylketone, dissolve following (a) ~ (c), obtain the adhesive compound solution of concentration 23 % by weight.

(length is rapids changes into (strain) Inc. to a acrylate copolymer that () is main monomer with ethyl propenoate, butyl acrylate and vinyl cyanide, trade(brand)name: SG-P3, the content of each main monomer: ethyl propenoate 30 % by weight, butyl acrylate 39 % by weight, vinyl cyanide 28 % by weight)

100 parts

(b) epoxy resin (Mitsubishi Chemical Ind's system, goods name: YX-8034 (alicyclic epoxy resin))

26 parts

(c) acid anhydrides ((strain) new Japanese natural sciences Inc., goods name: MH-700 (ester ring type acid anhydrides))

24 parts

By the thickness after this adhesive compound solution coat to silicone demoulding process be demoulding process film (release liner) that the polyethylene terephthalate film of 38 μm is formed upper after, at 130 DEG C dry 2 minutes.Thus, the chip join film A of thickness 20 μm is made.

(embodiment 2)

In methylethylketone, dissolve following (a) ~ (b), obtain the adhesive compound solution of concentration 23 % by weight.

100 parts

(b) acid anhydrides ((strain) new Japanese natural sciences Inc., goods name: MH-700 (ester ring type acid anhydrides))

10 parts

By the thickness after this adhesive compound solution coat to silicone demoulding process be demoulding process film (release liner) that the polyethylene terephthalate film of 38 μm is formed upper after, at 130 DEG C dry 2 minutes.Thus, the chip join film B of thickness 20 μm is made.

(embodiment 3)

(length is rapids changes into (strain) Inc. to a acrylate copolymer that () is main monomer with butyl acrylate and vinyl cyanide, trade(brand)name: SG-700AS, the content of each main monomer: ethyl propenoate 38 % by weight, butyl acrylate 40 % by weight, vinyl cyanide 17 % by weight)

100 parts

14 parts

(c) silica filler (Admatechs Inc., goods name: SO-E2)

15 parts

By the thickness after this adhesive compound solution coat to silicone demoulding process be demoulding process film (release liner) that the polyethylene terephthalate film of 38 μm is formed upper after, at 130 DEG C dry 2 minutes.Thus, the chip join film C of thickness 20 μm is made.

(comparative example 1)

In methylethylketone, dissolve following (a) ~ (d), obtain the adhesive compound solution of concentration 23 % by weight.

100 parts

(b) epoxy resin (DIC Inc., goods name: HP-7200L)

23 parts

(c) resol (bright and change into Inc., goods name: MEH-7500)

25 parts

(d) filler (Admatechs Inc., goods name: SO-E5, median size: 1.5 μm)

30 parts

By the thickness after this adhesive compound solution coat to silicone demoulding process be demoulding process film (release liner) that the polyethylene terephthalate film of 38 μm is formed upper after, at 130 DEG C dry 2 minutes.Thus, the chip join film D of thickness 20 μm is made.

(comparative example 2)

100 parts

(b) epoxy resin (DIC Inc., goods name: HP-7200L)

23 parts

(c) resol (bright and change into Inc., goods name: MEH-7500)

25 parts

By the thickness after this adhesive compound solution coat to silicone demoulding process be demoulding process film (release liner) that the polyethylene terephthalate film of 38 μm is formed upper after, at 130 DEG C dry 2 minutes.Thus, the chip join film E of thickness 20 μm is made.

(comparative example 3)

100 parts

(b) epoxy resin (DIC Inc., goods name: HP-7200L)

35 parts

By the thickness after this adhesive compound solution coat to silicone demoulding process be demoulding process film (release liner) that the polyethylene terephthalate film of 38 μm is formed upper after, at 130 DEG C dry 2 minutes.Thus, the chip join film F of thickness 20 μm is made.

(mensuration of the transmittance T1 of chip join film before thermofixation under wavelength 400nm)

Measure embodiment and the transmittance of chip join film under wavelength 400nm involved by comparative example.Particularly, under the following conditions the chip join film (thickness: 20 μm) involved by embodiment and comparative example is measured, obtain the transmittance (%) under 400nm.Result is as shown in table 1.

< determination of light transmittance condition >

Length scanning speed: 2000nm/ minute

Measurement range: 300 ~ 1200nm

Integrating sphere unit: ISN-723

Point footpath: 1cm is square

(chip join film heats the mensuration of the transmittance T2 after 1 hour under wavelength 400nm at 120 DEG C)

Chip join film involved by embodiment and comparative example is heated 1 hour at 120 DEG C.Afterwards, the transmittance under wavelength 400nm is determined at.Condition determination is same with transmittance T1.Result is as shown in table 1.

In addition, the difference (T1-T2) of T1 and T2 and the ratio T2/T1 of T1 and T2 are also shown in table 1.

(mensuration of the loss elastic modulus of chip join film at 120 DEG C)

Measure embodiment and the loss elastic modulus of chip join film at 120 DEG C involved by comparative example.Particularly, for the chip join film of embodiment, comparative example, be laminated to thickness 200 μm respectively, obtain the working sample of width 10mm, length 40mm.Then, use Measurement of Dynamic Viscoelasticity device (RSA (III), Rheometrics scientific & technical corporation system), loss elastic modulus measure-50 ~ 300 DEG C under the condition of chuck spacing 22.5mm, frequency 1Hz, heat-up rate 10 DEG C/min at, uses the loss elastic modulus at 120 DEG C now.

< cutting blade >

Embodiment 1 ~ 3 and the cutting blade A involved by comparative example 1 ~ 3 (embodiment 1 ~ 3 and comparative example 1 ~ 3 in common) prepare as described below.

Possessing prolong, nitrogen ingress pipe, temperature take into account in the reaction vessel of whipping appts, add 2-EHA (2EHA) 70 parts, vinylformic acid 2-hydroxy methacrylate (HEA) 25 parts, peracid benzoyl 0.2 part and toluene 60 parts, 61 DEG C of aggregation processing 6 hours in nitrogen gas stream, obtain acrylic acid polymer A.

In this acrylic acid polymer A, add 2-methacryloxyethyl isocyanic ester (MOI) 10 parts, in air draught, carry out addition reaction process in 48 hours at 50 DEG C, obtain acrylic acid polymer A '.

Then, add Photoepolymerizationinitiater initiater (trade(brand)name " Irgacure 651 ", Ciba Specialty Chemicals's system) 4 parts relative to acrylic acid polymer A ' 100 parts, make binder solution.

What the binder solution of described middle preparation is applied to PET release liner implements on the face of silicone-treated, heat cross-linking 2 minutes at 120 DEG C, forms the binder layer precursor of thickness 20 μm.Then, preparation has the base material film of the thickness 80 μm of 2 layers of structure of polypropylene layer (thickness 40 μm) and polyethylene layer (thickness 40 μm), and surperficial at this adhesive precursor take polypropylene layer as binding face ground base material film of fitting.Only 500mJ ultraviolet is irradiated to the part (diameter 220mm) suitable with semiconductor wafer adhesive portion (diameter 200mm) of binder layer precursor, form binder layer.Thus, the cutting blade A involved by embodiment 1 is obtained.

(mensuration of the transmittance of cutting blade under wavelength 400nm)

Measure embodiment and the transmittance of the cutting blade involved by comparative example under wavelength 400nm.Particularly, measure embodiment and the cutting blade involved by comparative example (thickness: 100 μm) under the following conditions, obtain the transmittance (%) under 400nm.Result is as shown in table 1.

< determination of light transmittance condition >

Speed: 2000nm/min

Measurement range: 300 ~ 1200nm

Integrating sphere: ISN-723

Point footpath: 1cm is square

< is with the making > of the chip join film of cutting blade

(embodiment 1)

Chip join film A and cutting blade A is fitted, obtains the chip join film A with cutting blade involved by embodiment 1.Laminating condition is 40 DEG C, 10mm/ second, line pressure 30kgf/cm.

(embodiment 2)

Chip join film B and cutting blade A is fitted, obtains the chip join film B with cutting blade involved by embodiment 2.Laminating condition is 40 DEG C, 10mm/ second, line pressure 30kgf/cm.

(embodiment 3)

Chip join film C and cutting blade A is fitted, obtains the chip join film B with cutting blade involved by embodiment 2.Laminating condition is 40 DEG C, 10mm/ second, line pressure 30kgf/cm.

(comparative example 1)

Chip join film D and cutting blade A is fitted, obtains the chip join film C with cutting blade involved by comparative example 1.Laminating condition is 40 DEG C, 10mm/ second, line pressure 30kgf/cm.

(comparative example 2)

Chip join film E and cutting blade A is fitted, obtains the chip join film D with cutting blade involved by comparative example 2.Laminating condition to be laminating condition be 40 DEG C, 10mm/ second, line pressure 30kgf/cm.

(comparative example 3)

Chip join film F and cutting blade A is fitted, obtains the chip join film E with cutting blade involved by comparative example 3.Laminating condition to be laminating condition be 40 DEG C, 10mm/ second, line pressure 30kgf/cm.

(mensuration with the transmittance of chip join film under wavelength 400nm of cutting blade)

Measure embodiment and the transmittance of chip join film under wavelength 400nm with cutting blade involved by comparative example.Particularly, under the following conditions the chip join film with cutting blade (thickness: 120 μm) involved by embodiment and comparative example is measured, obtain the transmittance (%) under 400nm.Result is as shown in table 1.

< determination of light transmittance condition >

Speed: 2000nm/min

Measurement range: 300 ~ 1200nm

Integrating sphere: ISN-723

Point footpath: 1cm is square

(evaluation of back side fragment can be confirmed)

The chip join film with cutting blade involved by embodiment, comparative example connect by roll-in and fits in semiconductor wafer (diameter: 12 inches, thickness: 50 μm), then cutting.Described in the < laminating condition > that the condition that roll-in connects is following as follows.In addition, entirely cutting of the square chip size of 10mm is cut into.The condition < described as follows of cutting cuts described in condition >.

< laminating condition >

Sticker: the smart mechanism in day east, MA-3000II

Labeling rates: 10mm/min

Application pressing force: 0.15MPa

Platform temperature during stickup: 40 DEG C

< cuts condition >

Cutting unit: DISCO Inc., DFD-6361

Cut ring: 2-8-1 (DISCO Inc.)

Cutting speed in feet per minute: 80mm/sec

Cutting blade:

Z1; DISCO Inc. 2050HEDD

Z2; DISCO Inc. 2050HEBB

Cutting blade rotating speed:

Z1；40,000rpm

Z2；40,000rpm

Blade height:

Z1；0.170mm

Z2；0.090mm

Cutting mode: A pattern/stepping cutting

Wafer chip size: 10.0mm is square

Afterwards, to whether confirming that from cutting blade side the back side fragment of chip is evaluated.Particularly, the state that whether can confirm chip back is evaluated by visual.Can confirm that the average evaluation of the state of chip back is 〇, the average evaluation that cannot confirm for ×.It should be noted that, be evaluated as 〇 and do not refer to that the back side of chip exists fragment, and refer to the state that can confirm the back side.Similarly, be evaluated as × do not refer to that the back side of chip does not exist fragment, and refer to the state that cannot confirm the back side.Result is as shown in table 1.

(evaluation of side fragment after thermal treatment, can be confirmed)

After can confirming the evaluation of back side fragment, pick up the chip with chip join film, by its chip join in minute surface chip.Pickup conditions and chip join condition as described below.

< pickup conditions >

Device: Xin Chuan Inc., chip engagement machine, SPA-300

Pin number: 5

Pickup height (Ha イト): 400 μm

< chip join condition >

Device: Xin Chuan Inc., chip engagement machine, SPA-300

Temperature: 120 DEG C

Load: 10N

Time: 1 second

After chip join, with the drying machines of 120 DEG C, sample is heated 1 hour, afterwards, to whether confirming that the side fragment of chip is evaluated.Particularly, by visual to whether confirming that the state of the side of chip is evaluated.The average evaluation that can confirm the state of the side of chip is zero, the average evaluation that cannot confirm for ×.Result is as shown in table 1.

[table 1]

	Embodiment 1	Embodiment 2	Embodiment 3	Comparative example 1	Comparative example 2	Comparative example 3
							Transmittance T1 (%)	93	94	90	78	83	88
Transmittance T2 (%)	84	92	72	55	59	65
							T1-T2(％)	9	2	12	23	24	23
T2/T1	0.90	0.98	0.80	0.71	0.71	0.74
							The loss elastic modulus of chip join film at 120 DEG C (MPa)	0.07	0.24	0.35	0.22	0.03	0.04
The transmittance of cutting blade under wavelength 400nm (%)	85	85	85	85	85	85
							With the transmittance of chip join film under wavelength 400nm (%) of cutting blade	77	79	65	48	50	53
Back side fragment can be confirmed	○	○	○	×	○	○
							Side fragment can be confirmed after thermal treatment	○	○	○	×	×	×

Claims

1. a chip join film, is characterized in that,

When the transmittance before thermofixation under wavelength 400nm being set to T1 (%) and the transmittance heated after 1 hour under wavelength 400nm at 120 DEG C is set to T2 (%), described T1 is more than 80%, and the difference of described T1 and described T2 and T1-T2 are less than 20%.

2. chip join film as claimed in claim 1, is characterized in that,

The ratio T2/T1 of described T1 and described T2 is in the scope of 0.75 ~ 1.0.

3., with a chip join film for cutting blade, it is the chip join film with cutting blade being provided with chip join film according to claim 1 on cutting blade, it is characterized in that,

The transmittance of described cutting blade under wavelength 400nm is greater than 80%.

4., as claimed in claim 3 with the chip join film of cutting blade, it is characterized in that,

The described transmittance of chip join film under wavelength 400nm with cutting blade before thermofixation is greater than 50%.

5., as claimed in claim 3 with the chip join film of cutting blade, it is characterized in that,

Relative to whole organic resin constituent, described chip join film contains the acrylic copolymer of more than 50 % by weight.

6., as claimed in claim 3 with the chip join film of cutting blade, it is characterized in that,

Described chip join film contains acrylic copolymer, and described acrylic copolymer obtains by the ratio with more than 50 % by weight being contained the raw material monomer polymerization of alkyl acrylate or alkyl methacrylate.

7., as claimed in claim 3 with the chip join film of cutting blade, it is characterized in that,

Described cutting blade is made up of base material and binder layer,

Described binder layer contains acrylic copolymer, and described acrylic copolymer obtains by the ratio with more than 50 % by weight being contained the raw material monomer polymerization of alkyl acrylate or alkyl methacrylate.

8., as claimed in claim 3 with the chip join film of cutting blade, it is characterized in that,

Described chip join film contains and is selected from alicyclic epoxy resin and ester ring type acid anhydrides more than at least a kind as thermosetting resin.

9., as claimed in claim 3 with the chip join film of cutting blade, it is characterized in that,

The loss elastic modulus of described chip join film at 120 DEG C is 0.05 ~ 0.5MPa.

10. a semiconductor device, is characterized in that,

Use manufacturing with the chip join film of cutting blade according to any one of the chip join film described in claim 1 or 2 or claim 3 ~ 9.

The manufacture method of 11. 1 kinds of semiconductor devices, is characterized in that, comprising:

Preparatory process, prepares the chip join film with cutting blade according to any one of claim 3 ~ 9;