CN104880847A - IPS型On Cell触控显示面板及其制作方法 - Google Patents
IPS型On Cell触控显示面板及其制作方法 Download PDFInfo
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- CN104880847A CN104880847A CN201510342659.XA CN201510342659A CN104880847A CN 104880847 A CN104880847 A CN 104880847A CN 201510342659 A CN201510342659 A CN 201510342659A CN 104880847 A CN104880847 A CN 104880847A
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
本发明提供一种IPS型On Cell触控显示面板及其制作方法。该IPS型On Cell触控显示面板包括相对设置的阵列彩膜基板(1)与上基板(3)、夹设于阵列彩膜基板(1)与上基板(3)之间的液晶层(5)、及设于上基板(3)远离液晶层(5)一侧的触控电极(7);所述阵列彩膜基板(1)设置有TFT(T)、像素电极(18)、梳状的公共电极(20)、与彩膜光阻(17),集成了TFT阵列与彩膜滤光的功能;所述上基板(3)仅包括上衬底基板(31)、及设于上衬底基板(31)靠近液晶层(5)一侧表面上的上配向膜(33);所述触控电极(7)设于该上衬底基板(3)远离液晶层(5)一侧的表面上,所述触控电极(7)经过高温退火处理,从而电阻较低、触控灵敏度较高。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种IPS型On Cell触控显示面板及其制作方法。
背景技术
随着显示技术的飞速发展,触控显示面板已经广泛地被人们所接受及使用,如智能手机、平板电脑等均使用了触控显示面板。触控显示面板采用嵌入式触控技术将触控面板和液晶显示面板结合为一体,并将触控面板功能嵌入到液晶显示面板内,使得液晶显示面板同时具备显示和感知触控输入的功能。
液晶显示面板通常是由一彩膜基板(Color Filter,CF)、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate,TFT Array Substrate)以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成,其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转,将背光模组的光线折射出来产生画面。按照液晶的取向方式不同,目前主流市场上的液晶显示面板可以分为以下几种类型:垂直配向(Vertical Alignment,VA)型、扭曲向列(Twisted Nematic,TN)或超扭曲向列(Super Twisted Nematic,STN)型、平面转换(In-Plane Switching,IPS)型、及边缘场开关(Fringe FieldSwitching,FFS)型。
其中IPS型液晶显示面板中的液晶分子相对于基板面平行取向,通过对液晶层施加横向电场来控制液晶分子的旋转。如图1所示,传统的IPS型液晶显示面板通常包括相对设置的TFT基板100、CF基板200及夹设于二者之间的液晶层300。所述TFT基板100设置有:下衬底基板110、栅极121、扫描线122、栅极绝缘层130、半导体层140、源/漏极151、数据线152、氧化铟锡(ITO)像素电极160、绝缘保护层170、梳状的ITO公共电极180、以及下配向膜190;所述CF基板200设置有:上衬底基板210、彩膜光阻220、黑色矩阵230、光阻间隔物240、及上配向膜250;为了对该传统IPS型液晶显示面板进行电磁保护,在CF基板200的上衬底基板210远离液晶层3一侧的表面上设有一层整片式的ITO透明电极260。
触控显示面板依感应技术不同可分为电阻式、电容式、光学式、音波式四种,目前主流的触控技术为电容式,其中电容式又分为自电容式和互电容式,目前市场上的电容式触控显示面板为主要为互电容式,互电容的优点在于可实现多点触控。触控显示面板根据结构不同可划分为:触控电极覆盖于液晶盒上式(On Cell),触控电极内嵌在液晶盒内式(In Cell)、以及外挂式。其中,In cell式具有成本低、超薄、和窄边框的优点,主要应用在高端触控产品中,但由于In cell式触控技术工艺难度较大,信号干扰等因素,其灵敏度较差。目前市场上应用最多的触控显示面板仍为外挂式,外挂式的优点在于灵敏度高,响应速度快,但缺点是成本高,产品超薄化受限制。On Cell式集成了外挂式和In cell式的优点,既能提高灵敏度又能降低面板厚度,但由于在On Cell式触控显示面板的制作过程中,只能在液晶成盒之后在面板表面镀用于制作触控电极的透明电极ITO,ITO退火温度受限制,因此电阻很难降低,导致触控灵敏度提高受限。
发明内容
本发明的目的在于提供一种IPS型On Cell触控显示面板,其触控电极的电阻较低、触控灵敏度较高。
本发明的目的还在于提供一种IPS型On Cell触控显示面板的制作方法,能够降低触控电极的电阻,提高触控灵敏度。
为实现上述目的,本发明提供一种IPS型On Cell触控显示面板,包括阵列彩膜基板、与所述阵列彩膜基板相对设置的上基板、夹设于所述阵列彩膜基板与上基板之间的液晶层、及设于所述上基板远离液晶层一侧的触控电极;
所述阵列彩膜基板设置有TFT、像素电极、梳状公共电极、与彩膜光阻,集成了TFT阵列与彩膜滤光的功能;
所述上基板仅包括上衬底基板、及设于所述上衬底基板靠近液晶层一侧表面上的上配向膜;
所述触控电极设于该上衬底基板远离液晶层一侧的表面上,所述触控电极经过高温退火处理。
所述阵列彩膜基板具体包括下衬底基板、设于所述下衬底基板上的栅极与扫描线、设于栅极、扫描线与下衬底基板上的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的岛状半导体层、设于所述栅极绝缘层上分别接触岛状半导体层两侧的源\漏极、设于所述栅极绝缘层上的数据线、设于所述源\漏极、数据线与栅极绝缘层上的绝缘保护层、设于绝缘保护层上的彩膜光阻、设于所述彩膜光阻上并接触部分源\漏极的像素电极、设于所述像素电极与彩膜光阻上的绝缘层、于所述绝缘层上与像素电极相对设置的梳状公共电极、设于所述绝缘层上的黑色矩阵、设于所述黑色矩阵上的光阻间隔物、以及覆盖所述绝缘层、公共电极、黑色矩阵、与光阻间隔物的下配向膜;
所述栅极、岛状半导体层、及源\漏极构成TFT。
所述触控电极的材料为ITO。
所述像素电极与公共电极的材料为ITO。
所述上衬底基板与下衬底基板均为玻璃基板。
本发明还提供一种IPS型On Cell触控显示面板的制作方法,包括如下步骤:
步骤1、提供上衬底基板,在所述上衬底基板的一侧表面上涂布配向液,形成上配向膜,完成上基板的制作;
步骤2、在所述上衬底基板与配向膜相对的另一侧表面上制作触控电极,并对所述触控电极进行高温退火处理,以降低触控电极的电阻;
步骤3、提供阵列彩膜基板,所述阵列彩膜基板设置有TFT、像素电极、梳状的公共电极、与彩膜光阻,集成了TFT阵列与彩膜滤光的功能;
步骤4、将阵列彩膜基板与上基板对组,使所述上配向膜朝向阵列彩膜基板,向阵列彩膜基板与上基板之间灌入液晶,形成液晶层。
所述步骤2还包括在对所述触控电极进行高温退火处理后,涂布一层覆盖所述触控电极的有机保护膜;
所述步骤4还包括去除所述有机保护膜。
所述有机保护膜的材料为聚酰亚胺或光刻胶,厚度为3~5μm。
所述阵列彩膜基板具体包括下衬底基板、设于所述下衬底基板上的栅极与扫描线、设于栅极、扫描线与下衬底基板上的栅极绝缘层、于所述栅极上方设于栅极绝缘层上的岛状半导体层、设于所述栅极绝缘层上分别接触岛状半导体层两侧的源\漏极、设于所述栅极绝缘层上的数据线、设于所述源\漏极、数据线与栅极绝缘层上的绝缘保护层、设于绝缘保护层上的彩膜光阻、设于所述彩膜光阻上并接触部分源\漏极的像素电极、设于所述像素电极与彩膜光阻上的绝缘层、于所述绝缘层上与像素电极相对设置的梳状公共电极、设于所述绝缘层上的黑色矩阵、设于所述黑色矩阵上的光阻间隔物、以及覆盖所述绝缘层、公共电极、黑色矩阵、与光阻间隔物的下配向膜;所述栅极、岛状半导体层、及源\漏极构成TFT。
所述触控电极、像素电极与公共电极的材料为ITO;所述上衬底基板与下衬底基板均为玻璃基板。
本发明的有益效果:本发明提供的一种IPS型On Cell触控显示面板,其阵列彩膜基板集成了TFT阵列与彩膜滤光的功能,上基板仅包括衬底基板与配向膜,触控电极设置在上衬底基板远离液晶层一侧的表面上,且触控电极经过高温退火处理,使得触控电极的电阻较低、触控灵敏度较高;本发明提供的一种IPS型On Cell触控显示面板的制作方法,在阵列彩膜基板与上基板对组、液晶层形成之前,在上基板的上衬底基板远离液晶层一侧的表面上制作出触控电极,并对触控电极进行高温退火处理,能够降低触控电极的电阻,提高触控灵敏度。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为传统的IPS型液晶显示面板的结构示意图;
图2为本发明的IPS型On Cell触控显示面板的结构示意图;
图3为本发明的IPS型On Cell触控显示面板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2,本发明首先提供一种IPS型On Cell触控显示面板,包括阵列彩膜基板1、与所述阵列彩膜基板1相对设置的上基板3、夹设于所述阵列彩膜基板1与上基板3之间的液晶层5、及设于所述上基板3远离液晶层5一侧的触控电极7。
具体地,所述阵列彩膜基板1集成了TFT阵列与彩膜滤光的功能,包括下衬底基板11、设于所述下衬底基板11上的栅极121与扫描线122、设于栅极121、扫描线122与下衬底基板11上的栅极绝缘层13、于所述栅极121上方设于栅极绝缘层13上的岛状半导体层14、设于所述栅极绝缘层13上分别接触岛状半导体层14两侧的源\漏极151、设于所述栅极绝缘层13上的数据线152、设于所述源\漏极151、数据线152与栅极绝缘层13上的绝缘保护层16、设于绝缘保护层16上的彩膜光阻17、设于所述彩膜光阻17上并接触部分源\漏极151的像素电极18、设于所述像素电极18与彩膜光阻17上的绝缘层19、于所述绝缘层19上与像素电极18相对设置的梳状公共电极20、设于所述绝缘层19上的黑色矩阵21、设于所述黑色矩阵21上的光阻间隔物22、以及覆盖所述绝缘层19、公共电极20、黑色矩阵21、与光阻间隔物22的下配向膜23。所述栅极121、岛状半导体层14、及源\漏极151构成TFT T。
所述上基板3仅包括上衬底基板31、及设于所述上衬底基板31靠近液晶层5一侧表面上的上配向膜33。
所述触控电极7设于该上衬底基板3远离液晶层5一侧的表面上,所述触控电极7经过高温退火处理,从而触控电极7的电阻较小,触控灵敏度较高。
进一步地,所述触控电极7的材料优选为ITO。
所述像素电极18与公共电极20的材料优选为ITO。
所述上衬底基板31与下衬底基板11均为玻璃基板。
请参阅图3,结合图2,本发明还提供一种IPS型On Cell触控显示面板的制作方法,包括如下步骤:
步骤1、提供上衬底基板31,在所述上衬底基板31的一侧表面上涂布配向液,形成上配向膜33,完成上基板3的制作。
具体地,所述上衬底基板31为玻璃基板。
步骤2、在所述上衬底基板31与配向膜33相对的另一侧表面上制作触控电极7,并对所述触控电极7进行高温退火处理,以降低触控电极7的电阻。
具体地,所述触控电极7的材料优选为ITO。
进一步地,该步骤2还包括在对所述触控电极7进行高温退火处理后,涂布一层厚度为3~5μm的覆盖所述触控电极7的有机保护膜,如聚酰亚胺(PI)膜或光刻胶(PR)膜等,以防止在后续步骤的对组过程中刮伤触控电极7。
步骤3、提供阵列彩膜基板1。
具体地,所述阵列彩膜基板1集成了TFT阵列与彩膜滤光的功能,包括下衬底基板11、设于所述下衬底基板11上的栅极121与扫描线122、设于栅极121、扫描线122与下衬底基板11上的栅极绝缘层13、于所述栅极121上方设于栅极绝缘层13上的岛状半导体层14、设于所述栅极绝缘层13上分别接触岛状半导体层14两侧的源\漏极151、设于所述栅极绝缘层13上的数据线152、设于所述源\漏极151、数据线152与栅极绝缘层13上的绝缘保护层16、设于绝缘保护层16上的彩膜光阻17、设于所述彩膜光阻17上并接触部分源\漏极151的像素电极18、设于所述像素电极18与彩膜光阻17上的绝缘层19、于所述绝缘层19上与像素电极18相对设置的梳状公共电极20、设于所述绝缘层19上的黑色矩阵21、设于所述黑色矩阵21上的光阻间隔物22、以及覆盖所述绝缘层19、公共电极20、黑色矩阵21、与光阻间隔物22的下配向膜23。所述栅极121、岛状半导体层14、及源\漏极151构成TFT T。
所述下衬底基板11为玻璃基板。
所述像素电极18与公共电极20的材料优选为ITO。
上述阵列彩膜基板1采用现有的沉积工艺、或沉积工艺与掩膜刻蚀工艺依次制作各结构层,此处不再展开详述。
步骤4、将阵列彩膜基板1与上基板3对组,使所述上配向膜33朝向阵列彩膜基板1,向阵列彩膜基板1与上基板3之间灌入液晶,形成液晶层5。
进一步地,该步骤4还包括去除上述步骤2中覆盖所述触控电极7的有机保护膜。
至此完成IPS型On Cell触控显示面板的制作,由于触控电极7在阵列彩膜基板1与上基板3对组、液晶层5形成之前制作出来,并经过了高温退火处理,能够降低触控电极7的电阻,提高触控灵敏度。
综上所述,本发明的IPS型On Cell触控显示面板,其阵列彩膜基板集成了TFT阵列与彩膜滤光的功能,上基板仅包括衬底基板与配向膜,触控电极设置在上衬底基板远离液晶层一侧的表面上,且触控电极经过高温退火处理,使得触控电极的电阻较低、触控灵敏度较高;本发明的IPS型On Cell触控显示面板的制作方法,在阵列彩膜基板与上基板对组、液晶层形成之前,在上基板的上衬底基板远离液晶层一侧的表面上制作出触控电极,并对触控电极进行高温退火处理,能够降低触控电极的电阻,提高触控灵敏度。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种IPS型On Cell触控显示面板,其特征在于,包括阵列彩膜基板(1)、与所述阵列彩膜基板(1)相对设置的上基板(3)、夹设于所述阵列彩膜基板(1)与上基板(3)之间的液晶层(5)、及设于所述上基板(3)远离液晶层(5)一侧的触控电极(7);
所述阵列彩膜基板(1)设置有TFT(T)、像素电极(18)、梳状公共电极(20)、与彩膜光阻(17),集成了TFT阵列与彩膜滤光的功能;
所述上基板(3)仅包括上衬底基板(31)、及设于所述上衬底基板(31)靠近液晶层(5)一侧表面上的上配向膜(33);
所述触控电极(7)设于该上衬底基板(3)远离液晶层(5)一侧的表面上,所述触控电极(7)经过高温退火处理。
2.如权利要求1所述的IPS型On Cell触控显示面板,其特征在于,所述阵列彩膜基板(1)具体包括下衬底基板(11)、设于所述下衬底基板(11)上的栅极(121)与扫描线(122)、设于栅极(121)、扫描线(122)与下衬底基板(11)上的栅极绝缘层(13)、于所述栅极(121)上方设于栅极绝缘层(13)上的岛状半导体层(14)、设于所述栅极绝缘层(13)上分别接触岛状半导体层(14)两侧的源\漏极(151)、设于所述栅极绝缘层(13)上的数据线(152)、设于所述源\漏极(151)、数据线(152)与栅极绝缘层(13)上的绝缘保护层(16)、设于绝缘保护层(16)上的彩膜光阻(17)、设于所述彩膜光阻(17)上并接触部分源\漏极(151)的像素电极(18)、设于所述像素电极(18)与彩膜光阻(17)上的绝缘层(19)、于所述绝缘层(19)上与像素电极(18)相对设置的梳状公共电极(20)、设于所述绝缘层(19)上的黑色矩阵(21)、设于所述黑色矩阵(21)上的光阻间隔物(22)、以及覆盖所述绝缘层(19)、公共电极(20)、黑色矩阵(21)、与光阻间隔物(22)的下配向膜(23);
所述栅极(121)、岛状半导体层(14)、及源\漏极(151)构成TFT(T)。
3.如权利要求1所述的IPS型On Cell触控显示面板,其特征在于,所述触控电极(7)的材料为ITO。
4.如权利要求1所述的IPS型On Cell触控显示面板,其特征在于,所述像素电极(18)与公共电极(20)的材料为ITO。
5.如权利要求2所述的IPS型On Cell触控显示面板,其特征在于,所述上衬底基板(31)与下衬底基板(11)均为玻璃基板。
6.一种IPS型On Cell触控显示面板的制作方法,其特征在于,包括如下步骤:
步骤1、提供上衬底基板(31),在所述上衬底基板(31)的一侧表面上涂布配向液,形成上配向膜(33),完成上基板(3)的制作;
步骤2、在所述上衬底基板(31)与配向膜(33)相对的另一侧表面上制作触控电极(7),并对所述触控电极(7)进行高温退火处理,以降低触控电极(7)的电阻;
步骤3、提供阵列彩膜基板(1),所述阵列彩膜基板(1)设置有TFT(T)、像素电极(18)、梳状公共电极(20)、与彩膜光阻(17),集成了TFT阵列与彩膜滤光的功能;
步骤4、将阵列彩膜基板(1)与上基板(3)对组,使所述上配向膜(33)朝向阵列彩膜基板(1),向阵列彩膜基板(1)与上基板(3)之间灌入液晶,形成液晶层(5)。
7.如权利要求6所述的IPS型On Cell触控显示面板的制作方法,其特征在于,所述步骤2还包括在对所述触控电极(7)进行高温退火处理后,涂布一层覆盖所述触控电极(7)的有机保护膜;
所述步骤4还包括去除所述有机保护膜。
8.如权利要求7所述的IPS型On Cell触控显示面板的制作方法,其特征在于,所述有机保护膜的材料为聚酰亚胺或光刻胶,厚度为3~5μm。
9.如权利要求6所述的IPS型On Cell触控显示面板的制作方法,其特征在于,所述阵列彩膜基板(1)具体包括下衬底基板(11)、设于所述下衬底基板(11)上的栅极(121)与扫描线(122)、设于栅极(121)、扫描线(122)与下衬底基板(11)上的栅极绝缘层(13)、于所述栅极(121)上方设于栅极绝缘层(13)上的岛状半导体层(14)、设于所述栅极绝缘层(13)上分别接触岛状半导体层(14)两侧的源\漏极(151)、设于所述栅极绝缘层(13)上的数据线(152)、设于所述源\漏极(151)、数据线(152)与栅极绝缘层(13)上的绝缘保护层(16)、设于绝缘保护层(16)上的彩膜光阻(17)、设于所述彩膜光阻(17)上并接触部分源\漏极(151)的像素电极(18)、设于所述像素电极(18)与彩膜光阻(17)上的绝缘层(19)、于所述绝缘层(19)上与像素电极(18)相对设置的梳状公共电极(20)、设于所述绝缘层(19)上的黑色矩阵(21)、设于所述黑色矩阵(21)上的光阻间隔物(22)、以及覆盖所述绝缘层(19)、公共电极(20)、黑色矩阵(21)、与光阻间隔物(22)的下配向膜(23);
所述栅极(121)、岛状半导体层(14)、及源\漏极(151)构成TFT(T)。
10.如权利要求9所述的IPS型On Cell触控显示面板的制作方法,其特征在于,所述触控电极(7)、像素电极(18)与公共电极(20)的材料为ITO;所述上衬底基板(31)与下衬底基板(11)均为玻璃基板。
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