CN104868721A - Step-down power conversion circuit and system thereof - Google Patents
Step-down power conversion circuit and system thereof Download PDFInfo
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- CN104868721A CN104868721A CN201410064640.9A CN201410064640A CN104868721A CN 104868721 A CN104868721 A CN 104868721A CN 201410064640 A CN201410064640 A CN 201410064640A CN 104868721 A CN104868721 A CN 104868721A
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- step down
- over circuit
- adjustable resistance
- down supplies
- nmos tube
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Abstract
The invention discloses a step-down power conversion circuit and a system thereof. According to the circuit, one end of an adjustable resistor R1 is connected to the drain electrode of an NMOS transistor, and the other end is connected to the gate of the NMOS transistor and one end of three diodes which are connected in series. The source electrode of the NMOS transistor is connected to one end of a load resistor RL and one end of a capacitor C. A common end formed by one end of the adjustable resistor R1 and the drain electrode of the NMOS transistor is taken as the input end of the step-down power conversion circuit. A common end formed by the source electrode of the NMOS transistor, one end of the load resistor RL and one end of the capacitor C is taken as the output end of the step-down power conversion circuit. The resistance value of the adjustable resistor R1 can be adjusted according to the voltage value outputted by the step-down power conversion circuit. By using the circuit and the system, the power supply of the logic parts of an implantable medical electronic product, a real-time clock and the like by button batteries can be realized, and the stable voltage outputted to the logic parts can be ensured at the same time.
Description
Technical field
The present invention relates to power converter topology field, particularly a kind of step down supplies change-over circuit and system.
Background technology
Implantable medical electronic product and real-time clock (Real Time Clock, RTC) etc. all need when without long-term works when external power source; And in the prior art, general employing button cell is powered to above-mentioned implantable medical electronic product and real-time clock, and the voltage exported due to button cell of the prior art is 3V, and the operating voltage of the logical gate of above-mentioned implantable medical electronic product and real-time clock etc. is all lower than 3V, therefore, in the prior art, need a kind of step down supplies change-over circuit badly, to reduce the voltage that button cell exports, and then realize powering to the logical gate of above-mentioned implantable medical electronic product and real-time clock etc.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of step down supplies change-over circuit and system, to reduce the voltage that button cell exports, and then realize powering to the logical gate of implantable medical electronic product and real-time clock etc.
For achieving the above object, the invention provides following technical scheme:
A kind of step down supplies change-over circuit, comprising: adjustable resistance R1, three diodes, N-type metal-oxide semiconductor (MOS) NMOS tube, load resistance RL and electric capacity C;
Wherein, one end of described adjustable resistance R1 is connected with the drain electrode of described NMOS tube, and the other end is connected with one end of three diodes of connecting with the grid of described NMOS tube respectively; The other end ground connection of the diode of described three series connection;
The source electrode of described NMOS tube is connected with one end of electric capacity C with one end of described load resistance RL respectively, the other end of described load resistance RL and the equal ground connection of the other end of described electric capacity C;
The common port that one end of described adjustable resistance R1 and the drain electrode of described NMOS tube are formed, as the input of step down supplies change-over circuit;
The common port that one end of the source electrode of described NMOS tube, one end of described load resistance RL and described electric capacity C is formed is as the output of described step down supplies change-over circuit; Wherein, the resistance size of magnitude of voltage to described adjustable resistance R1 that can export according to the output of described step down supplies change-over circuit adjusts.
Preferably, described adjustable resistance R1 comprises the P-type mos PMOS being in non-saturated region;
Wherein, the source electrode of described PMOS is as one end of described adjustable resistance R1, be connected with the drain electrode of described NMOS tube, the drain electrode of described PMOS is as the other end of described adjustable resistance R1, be connected with one end of described three diodes of connecting, grid is connected with the output of described step down supplies change-over circuit.
Preferably, described circuit also comprises: controller;
Wherein, one end of described controller is connected with the output of described step down supplies change-over circuit, and the other end is connected with the other end of described adjustable resistance R1; The size of magnitude of voltage to described adjustable resistance R1 that described controller can export according to described step down supplies change-over circuit adjusts.
A kind of step down supplies converting system, comprises described step down supplies change-over circuit, button cell and needs the logical gate of powered products;
Wherein, the input of described step down supplies change-over circuit is connected with the voltage output end of described button cell, and output is connected with the described power input of the logical gate of powered products that needs.
Preferably, the described powered products that needs comprises implantable medical electronic product and real-time clock.
In actual applications, the input of step down supplies change-over circuit can be connected with the voltage output end of button cell, the power input of the output of step down supplies change-over circuit with the logical gate needing powered products is connected; Because the diodes of three series connection and adjustable resistance R1 get the 3V voltage that button cell exports jointly, the magnitude of voltage at the diode places of so three series connection certainly will be less than 3V; Simultaneously, because NMOS tube will realize the conducting of drain electrode and source electrode, the magnitude of voltage of its grid certainly will require the magnitude of voltage being greater than source electrode, and namely the magnitude of voltage of grid equals the magnitude of voltage at the diode place of three series connection, therefore, the magnitude of voltage of its source electrode certainly will be less than 3V, and is the output of step down supplies change-over circuit due to the source electrode of NMOS tube, to sum up, the magnitude of voltage that the output of step down supplies change-over circuit of the present invention exports certainly will be less than 3V; Meanwhile, the magnitude of voltage that can export according to output due to the present invention adjusts adjustable resistance R1, so also can ensure that its magnitude of voltage exported keeps stable.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
One schematic diagram of the step down supplies change-over circuit that Fig. 1 provides for the embodiment of the present invention;
Another schematic diagram of the step down supplies change-over circuit that Fig. 2 provides for the embodiment of the present invention;
The another schematic diagram of the step down supplies change-over circuit that Fig. 3 provides for the embodiment of the present invention;
The schematic diagram of the step down supplies converting system that Fig. 4 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The invention discloses a kind of structure of step down supplies change-over circuit, as shown in Figure 1, at least comprise: adjustable resistance R1, three diodes (being respectively diode D1, diode D2 and diode D3), N-type metal-oxide semiconductor (MOS) (N-Mental-Oxide-Semiconductor, NMOS) pipe, load resistance RL and electric capacity C;
Wherein, one end of adjustable resistance R1 is connected with the drain electrode of NMOS tube, and the other end is connected with one end that diode D1, diode D2 connect with diode D3 with the grid of NMOS tube respectively; And the other end ground connection of diode D1, diode D2 and diode D3 series connection;
The source electrode of NMOS tube is connected with one end of electric capacity C with one end of load RL respectively, and the equal ground connection of the other end of the other end of load RL and electric capacity C;
And the common port that one end of adjustable resistance R1 and the drain electrode of NMOS tube are formed, as the input of step down supplies change-over circuit;
The common port that one end of the source electrode of NMOS tube, one end of load resistance RL and electric capacity C is formed is as the output of step down supplies change-over circuit; Wherein, the resistance size of the magnitude of voltage that can export according to the output of step down supplies change-over circuit to adjustable resistance R1 adjusts;
Principle of the present invention is as follows, still can see Fig. 1, and adjustable resistance R1 series diode D1/D2/D3, is connected between input voltage and ground, can forms the first branch road; And the tie point of resistance R1 and diode D1 can be used as reference voltage signal, connect with the grid of NMOS tube; Visible, circuit of the present invention, structure is simple, and the electric current of the first branch road can be set by resistance R1, can form super low-power consumption reference voltage generating circuit thus;
And said reference voltage signal can the grid of driving N metal-oxide-semiconductor, and the drain electrode of NMOS tube connects input voltage, and source electrode connects output voltage; Meanwhile, load resistance RL is connected between output voltage and ground, can form the second branch road; Concrete, the resistance value by adjustment load resistance RL sets the electric current of the second branch road; And the Main Function of electric capacity C is the transient state ripple reducing output voltage; Therefore above-mentioned NMOS tube, load resistance RL and electric capacity C can form source with device drive circuit, can provide larger transient load thus;
Simultaneously, it should be noted that, due to when above-mentioned source follower drive circuit load is heavy (when namely the resistance value of load resistance RL is less), its NMOS tube can flow through larger electric current, and now the value of the gate-source voltage difference (VGS=reference voltage-output voltage) of NMOS tube can increase; And when reference voltage is constant, its output voltage can reduce, this is that our institute is less desirable;
Therefore, in order to ensure that its output voltage still can be stablized when load resistance RL changes, introducing negative feedback control mechanisms, making the resistance size of its regulating resistance R1 when output voltage changes;
Specifically, when can work as output voltage reduction, reduce the resistance of adjustable resistance R1, thus the first branch current increases, effective pressure drop of diode D1, D2 and D3 increases, and reference voltage will rise, thus driver output voltage increases; And when output voltage increases time, the resistance of adjustable resistance R1 can be increased, thus the first branch current reduces, effective pressure drop of diode D1, D2 and D3 reduces, and reference voltage will decline, thus driver output voltage reduces.
In actual applications, the input of step down supplies change-over circuit can be connected with the voltage output end of button cell, the power input of the output of step down supplies change-over circuit with the logical gate needing powered products is connected; Because the magnitude of voltage at the diode place of the series connection of three in step down supplies change-over circuit certainly will be less than 3V; Simultaneously, because NMOS tube will realize the conducting of drain electrode and source electrode, the magnitude of voltage of its grid certainly will require the magnitude of voltage being greater than source electrode, and namely the voltage of grid equal the magnitude of voltage at the diode place of three series connection, therefore, the magnitude of voltage of its source electrode certainly will be less than 3V, and the source electrode of NMOS tube is the output of step down supplies change-over circuit; To sum up, the magnitude of voltage that the output of step down supplies change-over circuit of the present invention exports certainly will be less than 3V; Meanwhile, the size of magnitude of voltage to adjustable resistance R1 that can export according to output due to the present invention adjusts, and so also can ensure that its magnitude of voltage exported keeps stable.
In other embodiments of the present invention, as shown in Figure 2, the adjustable resistance R1 in above-mentioned all embodiments can be specially P-type mos (P-Mental-Oxide-Semiconductor, the PMOS) pipe being in non-saturated region;
Wherein, the source electrode of PMOS, as one end of adjustable resistance R1, is connected with the drain electrode of NMOS tube, and the drain electrode of PMOS is as the other end of adjustable resistance R1, the one end of the diode of connecting with three is connected, and the grid of PMOS is connected with the output of step down supplies change-over circuit;
Because the quiescent dissipation of above-mentioned first branch road and the second branch road is all less than uA rank, therefore, adopt foregoing circuit to carry out Power convert, super low-power consumption (<uA) can be realized.
In other embodiments of the present invention, as shown in Figure 3, the circuit in above-mentioned all embodiments also can comprise: controller;
Wherein, one end of controller is connected with the output of step down supplies change-over circuit, and the other end is connected with the other end of adjustable resistance R1; And the size of magnitude of voltage to adjustable resistance R1 that controller can export according to step down supplies change-over circuit adjusts;
Concrete, when the magnitude of voltage that can export at the output of step down supplies change-over circuit reduces, reduce the resistance of adjustable resistance R1, thus the electric current of the first branch road can be made to increase, effective pressure drop of its diode will increase, and reference voltage will rise, thus driver output voltage increases; And when the magnitude of voltage exported increases, can increase the resistance of adjustable resistance R1, thus make the electric current of the first branch road reduce, effective pressure drop of its diode will reduce, and its reference voltage will decline, thus driver output voltage reduces; Therefore, adopt said structure, can output voltage stabilization be ensured.
The invention also discloses a kind of step down supplies converting system, as shown in Figure 4, above-mentioned step down supplies change-over circuit 41, button cell 42 can be comprised, need the logical gate 43 of powered products;
Wherein, the input of step down supplies change-over circuit 41 is connected with the voltage output end of button cell 42, and output is connected with the power input of the logical gate 43 needing powered products;
Concrete, the above-mentioned powered products that needs comprises implanted doctor sequence electronic product and real-time clock etc.
Therefore adopt system of the present invention, the voltage that its step down supplies change-over circuit 41 can export button cell 42 carries out step-down process, thus make it to be needed the logical gate of powered products directly to use.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (5)
1. a step down supplies change-over circuit, is characterized in that, comprising: adjustable resistance R1, three diodes, N-type metal-oxide semiconductor (MOS) NMOS tube, load resistance RL and electric capacity C;
Wherein, one end of described adjustable resistance R1 is connected with the drain electrode of described NMOS tube, and the other end is connected with one end of three diodes of connecting with the grid of described NMOS tube respectively; The other end ground connection of the diode of described three series connection;
The source electrode of described NMOS tube is connected with one end of electric capacity C with one end of described load resistance RL respectively, the other end of described load resistance RL and the equal ground connection of the other end of described electric capacity C;
The common port that one end of described adjustable resistance R1 and the drain electrode of described NMOS tube are formed, as the input of step down supplies change-over circuit;
The common port that one end of the source electrode of described NMOS tube, one end of described load resistance RL and described electric capacity C is formed is as the output of described step down supplies change-over circuit; Wherein, the resistance size of magnitude of voltage to described adjustable resistance R1 that can export according to the output of described step down supplies change-over circuit adjusts.
2. circuit according to claim 1, is characterized in that, described adjustable resistance R1 comprises the P-type mos PMOS being in non-saturated region;
Wherein, the source electrode of described PMOS is as one end of described adjustable resistance R1, be connected with the drain electrode of described NMOS tube, the drain electrode of described PMOS is as the other end of described adjustable resistance R1, be connected with one end of described three diodes of connecting, grid is connected with the output of described step down supplies change-over circuit.
3. circuit according to claim 1, is characterized in that, also comprises: controller;
Wherein, one end of described controller is connected with the output of described step down supplies change-over circuit, and the other end is connected with the other end of described adjustable resistance R1; The size of magnitude of voltage to described adjustable resistance R1 that described controller can export according to described step down supplies change-over circuit adjusts.
4. a step down supplies converting system, is characterized in that, comprises the step down supplies change-over circuit as described in any one of claim 1-3, button cell and needs the logical gate of powered products;
Wherein, the input of described step down supplies change-over circuit is connected with the voltage output end of described button cell, and output is connected with the described power input of the logical gate of powered products that needs.
5. system according to claim 4, is characterized in that, the described powered products that needs comprises implantable medical electronic product and real-time clock.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410064640.9A CN104868721A (en) | 2014-02-25 | 2014-02-25 | Step-down power conversion circuit and system thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410064640.9A CN104868721A (en) | 2014-02-25 | 2014-02-25 | Step-down power conversion circuit and system thereof |
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| CN104868721A true CN104868721A (en) | 2015-08-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410064640.9A Pending CN104868721A (en) | 2014-02-25 | 2014-02-25 | Step-down power conversion circuit and system thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105656294A (en) * | 2016-03-26 | 2016-06-08 | 泰州亚芯微电子科技有限公司 | Step-down circuit in medium voltage and high voltage integrated circuit |
| CN109004821A (en) * | 2018-06-19 | 2018-12-14 | 上海艾为电子技术股份有限公司 | High pressure turns low-voltage circuit and the electronic device using it |
| CN109309490A (en) * | 2018-12-04 | 2019-02-05 | 苏州东剑智能科技有限公司 | Key circuit |
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Patent Citations (5)
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| CN101136586A (en) * | 2006-08-31 | 2008-03-05 | 圆创科技股份有限公司 | Multi-mode charge pump driving circuit of improving input noise when switching modes |
| US20090273325A1 (en) * | 2008-02-13 | 2009-11-05 | Fuji Electric Device Technology Co., Ltd. | Current negative-feedback circuit and dc-dc converter using the circuit |
| CN103457467A (en) * | 2012-05-31 | 2013-12-18 | 武汉永力电源技术有限公司 | Non-isolation voltage-reducing type DC-DC (direct current-direct current) converter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105656294A (en) * | 2016-03-26 | 2016-06-08 | 泰州亚芯微电子科技有限公司 | Step-down circuit in medium voltage and high voltage integrated circuit |
| CN109004821A (en) * | 2018-06-19 | 2018-12-14 | 上海艾为电子技术股份有限公司 | High pressure turns low-voltage circuit and the electronic device using it |
| CN109309490A (en) * | 2018-12-04 | 2019-02-05 | 苏州东剑智能科技有限公司 | Key circuit |
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Application publication date: 20150826 |