CN104851936A - Anti-artifact structure of flat panel detector, and manufacturing method thereof - Google Patents
Anti-artifact structure of flat panel detector, and manufacturing method thereof Download PDFInfo
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- CN104851936A CN104851936A CN201510199012.6A CN201510199012A CN104851936A CN 104851936 A CN104851936 A CN 104851936A CN 201510199012 A CN201510199012 A CN 201510199012A CN 104851936 A CN104851936 A CN 104851936A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000011241 protective layer Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000010410 layer Substances 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 41
- 238000007747 plating Methods 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000007598 dipping method Methods 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 15
- 239000007788 liquid Substances 0.000 abstract description 14
- 230000003628 erosive effect Effects 0.000 abstract description 3
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 208000015181 infectious disease Diseases 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 238000005457 optimization Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000003745 diagnosis Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
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- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 2
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- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- MCVAAHQLXUXWLC-UHFFFAOYSA-N [O-2].[O-2].[S-2].[Gd+3].[Gd+3] Chemical compound [O-2].[O-2].[S-2].[Gd+3].[Gd+3] MCVAAHQLXUXWLC-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
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- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention provides an anti-artifact structure of a flat panel detector, and a manufacturing method thereof. The method includes the steps of firstly providing a substrate and forming a protective layer on the surface of the substrate; and secondly, plating a lead layer on the surface of the protective layer. The anti-artifact structure of a flat panel detector is manufactured by the method. The substrate exhibiting great toughness and appropriate density is adopted to serve as a supporting body, so the substrate can be machined to be a large sheet material, and mounting operation is also easy. Moreover, the substrate is protected by the protective layer, so liquid state lead is prevented from eroding copper during a manufacturing process. The anti-artifact structure effectively prevents backscatter, so images higher in quality are formed to help doctors determine focus of infection.
Description
Technical field
The present invention relates to medical detection field, particularly relate to anti-artefact structure of a kind of flat panel detector and preparation method thereof.
Background technology
Since nineteen ninety-five RSNA releases First flat panel detector (Flat Panel Detector) equipment, along with dull and stereotyped Detection Techniques take off in recent years, in the research and development and production process of flat panel detector, dull and stereotyped Detection Techniques can be divided into directly and indirect two classes.The structure of indirect FPD is mainly added amorphous silicon layer (the amorphous Silicon with photodiode effect by scintillator or luminescent coating, a-Si) Zai Jia thin film semiconductor array (Thin Film Transistor array, TFT) is formed.
The imaging process of amorphous silicon X-ray flat panel detector needs experience " X ray " to arrive " visible ray ", and then " charge image " arrives the imaging transfer process of " digital picture ", is a kind of X ray image detector being core with amorphous silicon photodiodes array.Under x-ray bombardment, x-ray photon is converted to visible ray by the scintillator of detector or luminescent coating, then become electric image signal from the amorphous silicon array with photodiode effect, read by peripheral circuit integration and A/D conversion, thus obtain digitized image.It is fast that Amorphous silicon flat-panel detectors has image taking speed, good space and density resolution, high s/n ratio, the remarkable advantages such as Direct Digital output.
But, Amorphous silicon flat-panel detectors in use, X ray is through after the photosensitive layer of flat panel detector, can get on device, device, to the difference of the reflex behavior of X ray, will make some device show on image, form artifact, bring difficulty for doctor makes diagnosis accurately, easily cause mistaken diagnosis.
For solving the artifact problem that Amorphous silicon flat-panel detectors back scattering is formed, most producer pads lead rubber or sheet lead overleaf.Plumbous to X ray good absorbing, belong to high desnity metal, not easily disperse in rubber.But As time goes on, easily enrichment occurs, ageing of rubber, become uneven to the absorption of X ray and scattering, anti-back scattering artifact effect is bad.Therefore, utilize the anti-artifact effect meeting of pure sheet lead better, but sheet lead material is soft, easily damaged, high to operation requirements during assembling.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide anti-artefact structure of a kind of flat panel detector and preparation method thereof, soft for solving sheet lead material in prior art, the problem of not easily processing and installing.
For achieving the above object and other relevant objects, the invention provides the manufacture method of the anti-artefact structure of a kind of flat panel detector, described manufacture method at least comprises:
1) substrate is provided, forms protective layer at described substrate surface;
2) at described protective layer lead plating layer.
As the scheme of a kind of optimization of the manufacture method of the anti-artefact structure of flat panel detector of the present invention, described step 1) in form protective layer before comprise the step that described substrate is cleaned.
As the scheme of a kind of optimization of the manufacture method of the anti-artefact structure of flat panel detector of the present invention, in described step 1) and described step 2) between be also included in the step of described protective layer coating scaling powder layer.
As the scheme of a kind of optimization of the manufacture method of the anti-artefact structure of flat panel detector of the present invention, described manufacture method comprises: first, forms the protective layer of clad substrates the upper and lower of described substrate and circumferential surface; Then, at the upper and lower of described protective layer and circumferential surface coating scaling powder layer; Last lead plating, in lead plating process, described scaling powder leaves described protective layer, thus forms lead layer the upper and lower of described protective layer and circumferential surface.
As the scheme of a kind of optimization of the manufacture method of the anti-artefact structure of flat panel detector of the present invention, described substrate is copper, nickel or alloy.
As the scheme of a kind of optimization of the manufacture method of the anti-artefact structure of flat panel detector of the present invention, described step 1) in adopt the mode of plating to form protective layer at described substrate surface.
As the scheme of a kind of optimization of the manufacture method of the anti-artefact structure of flat panel detector of the present invention, described protective layer is nickel dam.
As the scheme of a kind of optimization of the manufacture method of the anti-artefact structure of flat panel detector of the present invention, described step 2) the middle mode lead layer on the plated surface of described protective layer adopting hot dipping, the temperature range of hot dipping is 400 DEG C ~ 450 DEG C.
As the scheme of a kind of optimization of the manufacture method of the anti-artefact structure of flat panel detector of the present invention, the thickness range of described lead layer is 0.05 ~ 0.1mm.
The present invention also provides a kind of flat panel detector anti-artefact structure, and described anti-artifact structure fabrication is in the described flat panel detector back side, and described anti-artefact structure comprises: substrate, be coated on the protective layer of described substrate surface, is plated in the lead layer of described protective layer.
As the scheme of a kind of optimization of the anti-artefact structure of flat panel detector of the present invention, described protective layer, lead layer are from coated whole substrate successively outside inner.
As the scheme of a kind of optimization of the anti-artefact structure of flat panel detector of the present invention, form protective layer and lead layer successively from bottom to top on a surface of described substrate.
As the scheme of a kind of optimization of the anti-artefact structure of flat panel detector of the present invention, the thickness range of described substrate is 0.2 ~ 0.4mm.
As the scheme of a kind of optimization of the anti-artefact structure of flat panel detector of the present invention, the thickness range of described protective layer is 0.5 ~ 1.5 μm.
As the scheme of a kind of optimization of the anti-artefact structure of flat panel detector of the present invention, the thickness range of described lead layer is 0.05 ~ 0.1mm
As mentioned above, anti-artefact structure of flat panel detector of the present invention and preparation method thereof, comprises step: first, provides a substrate, forms protective layer at described substrate surface; Then, at described protective layer lead plating layer.Adopt the manufacture method of invention to make and form flat panel detector anti-artefact structure, on the one hand by good toughness and the suitable substrate of density as supporter, be convenient to be processed into large sheet material, also operation easier to mount; On the other hand by the bottom of protective layer protecting group, prevent liquid lead in manufacturing process from causing erosion to copper.The anti-artefact structure of flat panel detector provided by the invention effectively can prevent back scattering, thus forms the higher image of quality, helps doctor to make a definite diagnosis focus.
Accompanying drawing explanation
Fig. 1 is the manufacture method schematic flow sheet of the anti-artefact structure of flat panel detector of the present invention.
The underlying structure schematic diagram provided in manufacture method one embodiment that Fig. 2 is the anti-artefact structure of flat panel detector of the present invention.
Fig. 3 is the structural representation forming protective layer in manufacture method one embodiment of the anti-artefact structure of flat panel detector of the present invention at substrate surface.
Fig. 4 is the structural representation at protective layer coating scaling powder layer in manufacture method one embodiment of the anti-artefact structure of flat panel detector of the present invention.
Fig. 5 is the structural representation forming lead layer in manufacture method one embodiment of the anti-artefact structure of flat panel detector of the present invention on scaling powder layer surface.
Fig. 6 is the anti-artifact structural representation formed in another embodiment of flat panel detector of the present invention anti-artifact construction manufacturing method.
Element numbers explanation
S1 ~ S2 step
1 substrate
2 protective layers
3 scaling powder layers
4 lead layers
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to accompanying drawing.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Flat panel detector (Flat Panel Detector, FPD) be the imaging detection equipment be made up of precise electronic components and parts, planar array detector can be passed through, the picture signal generated after radioactive ray transillumination object is converted to and is easy to Storage and Processing, and meet the digital picture of certain standard.
The structure of flat panel detector is sandwich construction, mainly add the amorphous silicon layer (amorphous Silicon, a-Si) with photodiode effect by scintillator (mainly containing cesium iodide CsI at present) or fluorophor (gadolinium oxysulfide GdSO) layer to add tft array again and form dull and stereotyped sounder.The scintillator of this type of flat panel detector or luminescent coating are after X-ray exposure, x-ray photon can be converted to visible ray, with 2 D photoelectric conversion equipment, visible ray is converted to the signal of telecommunication, by thin film transistor (TFT) array the digitized signal of each pixel to be read and the image processing system being communicated to computer is integrated into X ray image, finally obtain Digital Image Display.
The anti-artifact structure fabrication of described flat panel detector is at the back side of flat panel detector.Generally, flat panel detector has front and back, and wherein, front is the one side of X ray incidence, and the back side is the another side with vis-a-vis.
As shown in Figure 1, the invention provides the manufacture method of the anti-artefact structure of a kind of flat panel detector, described manufacture method comprises the steps:
First perform step S1, a substrate is provided, form protective layer at described substrate surface.
Select good toughness and the suitable material of density as base material.If the toughness that base material has had, then easily carry out cutting, and this substrate has high resistance to deformability, not easy fracture; If base material density is suitable, then there are high X ray absorbent properties, make flat panel detector have better false proof image ability.
In line with mentioned above principle, substrate described in the metal such as copper, nickel can be selected, any suitable metal or alloy also can be selected as substrate, such as steel alloy.In the present embodiment, prioritizing selection copper metal is as substrate.
The step that described substrate surface is cleaned was needed, usual greasy dirt, rusty stain, dust or other impurity adopting surfactant to remove substrate surface before forming protective layer.
The thickness range of described substrate can be chosen as 0.2 ~ 0.4mm, and in the present embodiment, the thickness of described substrate elects 0.3mm as temporarily.
Described protective layer is used for protecting described substrate, in follow-up lead plating process, prevents liquid lead to the dissolved corrosion of substrate.Therefore, require that described protective layer has higher fusing point, and at high temperature can not dissolve by liquid lead.In the present embodiment, select nickel dam to protect described substrate as protective layer, certainly, in other embodiments, described protective layer also can select other suitable materials.The thickness range of described protective layer controls within the scope of 0.5 ~ 1.5 μm, and in the present embodiment, the thickness of described protective layer is preferably 1 μm.
As the preferred a kind of execution mode of the present invention; a scaling powder layer is applied at described protective layer; to reduce the surface tension of follow-up lead layer to be plated, contribute to liquid lead in protective layer flowing, expansion and infiltration, thus form the uniform lead layer of thickness at protective layer.Described scaling powder layer is chosen as organic mixture, is in a liquid state, and mostly is rosin based mixture.
Then step S2 is performed, at described protective layer lead plating layer.
Can adopt the mode of hot dipping lead layer on the plated surface of described protective layer, the temperature range of hot dipping is 400 DEG C ~ 450 DEG C.Particularly, utilize lifting screw to clamp the substrate being formed with protective layer and scaling powder, be placed in liquid lead, more at the uniform velocity pull out, be cooled to room temperature afterwards, thus the lead layer of 0.05 ~ 0.1mm can be plated on the surface of described protective layer.
It should be noted that, in the process that leaching is plumbous, scaling powder layer can enable lead fully be covered in protective layer, and simultaneously under the hot conditions of liquid lead, described scaling powder layer can volatilize and leave protective layer, or scaling powder layer can be arranged by liquid lead.
Reference accompanying drawing hereinafter by corresponding case study on implementation is illustrated by the present invention further.
First, commercially buy brass or the red metal coiled material of international thickness calibration specification, coiled material is cut into the sheet material more bigger than target size, and flattened by sheet material, this sheet material is as substrate 1, and described substrate 1 as shown in Figure 2.Wherein, target size refers to the size of anti-artefact structure to be installed on flat panel detector, and four additional positions, limit are to facilitate clamp base 1 during follow-up lead plating, ensures anti-artefact structure to be installed all can plate lead.
Then, clean copper coin (i.e. substrate 1) surface with surfactant, then the nickel of electroplating surface about 1 μm at described copper coin, this nickel dam is as protective layer 2, and described nickel dam is as shown in Figure 3.The process of concrete electronickelling is: using the substrate of electroplated as negative electrode; using nickel metal as anode; containing the solution (as nickelous sulfate) of nickel ion as electroplate liquid; apply certain voltage between a cathode and an anode; through after a while, then can form one deck nickel protection layer 2 on described substrate 1 surface.
Then, as shown in Figure 4, at described nickel protection layer 2 surface application rosin based scaling powder layer 3.
Then; one container (diagram) is provided; lead metal is placed in described container; and heat this container to 400 DEG C, make the lead metal in container be melted into liquid lead liquid, utilize lifting screw (diagram) clamping be coated with the substrate 1 of scaling powder layer 3 and be immersed in liquid lead afterwards; at the uniform velocity pull out afterwards; soak scaling powder layer 3 in plumbous process to volatilize, described protective layer 2 surface heat plates one deck lead layer 4, makes composite board as shown in Figure 5 after cooling.
Finally, described composite board is flattened, and composite board is cut into target size, thus form the anti-artefact structure of flat panel detector.Follow-up carry out again other processing, such as punching on anti-artefact structure, makes this structure can be arranged on the back side of flat panel detector.
It should be noted that, in the present embodiment, as shown in Figure 2-5, all will form the protective layer 2 of clad substrates the upper and lower of described substrate 1 and circumferential surface; Then, at the upper and lower of described protective layer 2 and circumferential surface coating scaling powder layer 3; Last lead plating, in lead plating process, described scaling powder leafing opens described protective layer, thus forms lead layer 4 the upper and lower of described protective layer 2 and circumferential surface.As can be seen from accompanying drawing 2 ~ 5, described protective layer 2, lead layer 4 are from coated whole substrate 1 successively outside inner.
And in another embodiment, as shown in Figure 6, also only protective layer 2 and lead layer 4 can be formed successively from bottom to top on a surface of described substrate 1.Wherein, when mounted, described lead layer 4 directly contacts with the back side of flat panel detector.
As illustrated in Figures 5 and 6; the present invention also provides a kind of flat panel detector anti-artefact structure; described anti-artifact structure fabrication is in described flat panel detector (diagram) back side, and described anti-artefact structure at least comprises: substrate 1, be formed in the protective layer 2 on described substrate 1 surface and be plated in the lead layer 4 on described protective layer 2 surface.
Described flat panel detector comprises: photosensitive layer, amorphous silicon layer and TFT transistor array that scintillator (mainly containing cesium iodide CsI at present) or fluorophor are formed.Described photosensitive layer, amorphous silicon layer and TFT transistor array form laminated construction and are made on one of them surface (i.e. front) of a glass plate.Described anti-artefact structure is then made on another surface (i.e. the back side) of described glass plate.
In one embodiment, as shown in Figure 5, described protective layer 2, lead layer 4 are from coated whole substrate 1 successively outside inner.
In another embodiment, as shown in Figure 6, protective layer 2 and lead layer 4 is formed successively from bottom to top on a surface of described substrate 1.
Exemplarily, the thickness range of described substrate 1 is 0.2 ~ 0.4mm, and the thickness range of described protective layer 2 is 0.5 ~ 1.5 μm, and the thickness range of described lead layer 4 is 0.05 ~ 0.1mm.
In sum, the invention provides anti-artefact structure of a kind of flat panel detector and preparation method thereof, comprise step: first, a substrate is provided, form protective layer at described substrate surface; Then, at described protective layer lead plating layer.Adopt the manufacture method of invention to make and form flat panel detector anti-artefact structure, on the one hand by good toughness and the suitable substrate of density as supporter, be convenient to be processed into large sheet material, also operation easier to mount; On the other hand by the bottom of protective layer protecting group, prevent liquid lead in manufacturing process from causing erosion to copper.The anti-artefact structure of flat panel detector provided by the invention effectively can prevent back scattering, thus forms the higher image of quality, helps doctor to make a definite diagnosis focus.
So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (14)
1. a manufacture method for the anti-artefact structure of flat panel detector, is characterized in that, described manufacture method comprises:
1) substrate is provided, forms protective layer at described substrate surface;
2) at described protective layer lead plating layer.
2. the manufacture method of the anti-artefact structure of flat panel detector according to claim 1, is characterized in that: described step 1) in formed before protective layer and comprise the step that described substrate is cleaned.
3. the manufacture method of the anti-artefact structure of flat panel detector according to claim 1, is characterized in that: in described step 1) and described step 2) between be also included in the step of described protective layer coating scaling powder layer.
4. the manufacture method of the anti-artefact structure of flat panel detector according to claim 3, is characterized in that: described manufacture method comprises: first, forms the protective layer of clad substrates the upper and lower of described substrate and circumferential surface; Then, at the upper and lower of described protective layer and circumferential surface coating scaling powder layer; Last lead plating, in lead plating process, described scaling powder leafing opens described protective layer, thus forms lead layer the upper and lower of described protective layer and circumferential surface.
5. the manufacture method of the anti-artefact structure of flat panel detector according to claim 1, is characterized in that: described substrate is copper, nickel or alloy.
6. the manufacture method of the anti-artefact structure of flat panel detector according to claim 1, is characterized in that: described step 1) in adopt the mode of plating to form protective layer at described substrate surface.
7. the manufacture method of the anti-artefact structure of flat panel detector according to claim 6, is characterized in that: described protective layer is nickel dam.
8. the manufacture method of the anti-artefact structure of flat panel detector according to claim 1, is characterized in that: described step 2) the middle mode lead layer on the plated surface of described protective layer adopting hot dipping, the temperature range of hot dipping is 400 DEG C ~ 450 DEG C.
9. the anti-artefact structure of flat panel detector; described anti-artifact structure fabrication is in the described flat panel detector back side; it is characterized in that, described anti-artefact structure comprises: substrate, be formed in the protective layer of described substrate surface and be plated in the lead layer of described protective layer.
10. the anti-artefact structure of flat panel detector according to claim 9, is characterized in that: described protective layer, lead layer are from coated whole substrate successively outside inner.
The anti-artefact structure of 11. flat panel detector according to claim 9, is characterized in that: form protective layer and lead layer successively from bottom to top on a surface of described substrate.
The anti-artefact structure of 12. flat panel detector according to claim 9, is characterized in that: the thickness range of described substrate is 0.2 ~ 0.4mm.
The anti-artefact structure of 13. flat panel detector according to claim 9, is characterized in that: the thickness range of described protective layer is 0.5 ~ 1.5 μm.
The anti-artefact structure of 14. flat panel detector according to claim 9, is characterized in that: the thickness range of described lead layer is 0.05 ~ 0.1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510199012.6A CN104851936B (en) | 2015-04-23 | 2015-04-23 | A kind of anti-artefact structure of flat panel detector and preparation method thereof |
Applications Claiming Priority (1)
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