CN104818528A - Seed crystal splicing structure applicable to directional solidification like single crystal silicon cast ingot - Google Patents
Seed crystal splicing structure applicable to directional solidification like single crystal silicon cast ingot Download PDFInfo
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- CN104818528A CN104818528A CN201510179731.1A CN201510179731A CN104818528A CN 104818528 A CN104818528 A CN 104818528A CN 201510179731 A CN201510179731 A CN 201510179731A CN 104818528 A CN104818528 A CN 104818528A
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Abstract
The invention relates to a seed crystal splicing structure applicable to a directional solidification like single crystal silicon cast ingot. The seed crystal splicing structure comprises mutually spliced seed crystal blocks, one-to-one corresponding cylindrical blind holes are formed in a splicing surface of the adjacent seed crystal blocks, the corresponding cylindrical blind holes are oppositely spliced to form a cylindrical cavity after the seed crystal blocks are spliced, a cylindrical silicon rod is inserted into the cylindrical cavity, and the gap between the cylindrical silicon rod and each cylindrical blind hole is smaller than 0.5mm. The cylindrical blind holes are mutually matched, and the silicon rod and the blind holes at two ends form a tenon and mortise structure. Splicing stability of the seed crystal blocks can be improved by inserting the silicon rod into the blind holes, the fitting degree of seed crystal splicing surfaces can be improved, seed crystals at edges expand on heating in the heating process, the tenon and mortise structure is closer, joints are smaller, the adjacent seed crystal blocks are more closely fitted, joint enlargement caused by edge tilting of the seed crystal blocks is prevented, so that the defect of crystal dislocation is furthest decreased, and the performance of a photovoltaic device can be improved.
Description
Technical field
The present invention relates to the seed crystal splicing construction being applicable to directional solidification method class monocrystalline silicon cast ingot, belong to silicon crystal and manufacture field.
Background technology
In recent years, silicon single-crystal and policrystalline silicon are widely used in the field such as photovoltaic solar cell, liquid-crystal display.The conventional manufacture method of current class silicon single-crystal is directional solidification method, and the method lays rectangular parallelepiped seed crystal in flat crucible bottom, the regularly arranged formation inculating crystal layer of seed crystal.Silicon material is placed in flat crucible, is layed on inculating crystal layer.Controlled by the temperature of fusion stage, after the melting of silicon material, seed crystal melts gradually from the face contacted with silicon liquid, then is not melting through oriented heat dissipating oriented growth seed crystal realizing silicon ingot, obtains the crystal grain similar or the same with seed crystal.
Under the connecting method that rectangular parallelepiped seed crystal is regularly arranged, in the process of directional solidification method growth class monocrystalline, easily produce dislocation source, and then cause subsequent crystallographic dislocation multiplication, or form polycrystalline crystal boundary.Show after deliberation, crystal boundary causes monocrystalline area ratio to decline, and dislocation causes silicon chip to form a large amount of defects, and the photoelectric transformation efficiency reduction of solar cell, work-ing life shorten, thus affects the performance of photovoltaic device.
For this reason, Chinese invention patent application CN 103060892 A discloses " a kind monocrystalline silicon cast ingot seed crystal joining method ", changes vertical Mosaic face traditional for seed crystal into Mosaic face with angle of inclination or radian.Adopt the tangential normal direction with flat crucible bottom plane of Mosaic face, the seed crystal connecting method that the two does not overlap, reduces dislocation source by the shape changing seed crystal, even reduces polycrystalline crystal boundary and produces, realize full monocrystalline, the class single crystal growing that dislocation source is few.And then decrease the dislocation defects of silicon chip, improve monocrystalline area ratio, improve the photoelectric transformation efficiency of solar cell, extend the life-span of battery, thus improve the performance of photovoltaic device.
But contriver finds through experiment, aforesaid method is still at existing defects.Although inclined-plane splicing decreases the generation in gap to a certain extent, but make this seed crystal connecting method in seed crystal splicing and silicon material filling process because inclined-plane is smooth, seed crystal may be caused to splice distortion because of pressure, thus affect follow-up monocrystalline ingot quality, very high technical requirements is proposed to the splicing of seed crystal, process allowance degradation.Meanwhile, the seed crystal expanded by heating of arrangement of compacting in heat-processed, may tilt, the splicing gap between seed crystal can become large, causes subsequent crystallographic dislocation multiplication, or forms polycrystalline crystal boundary.
Summary of the invention
The object of the invention is to: the defect overcoming above-mentioned prior art, propose a kind of seed crystal splicing construction being applicable to directional solidification method class monocrystalline silicon cast ingot.
In order to achieve the above object, the seed crystal splicing construction being applicable to directional solidification method class monocrystalline silicon cast ingot that the present invention proposes, comprise the seed crystal blocks of splicing mutually, it is characterized in that: adjacent seed crystal blocks offers cylindricality blind hole one to one at Mosaic face place, after seed crystal blocks splicing, corresponding cylindricality blind hole becomes cylindrical cavity to spell shape, the axis of described cylindricality blind hole is parallel with crucible bottom, is inserted with cylindricality silicon rod in described cylindrical cavity, and the gap between cylindricality silicon rod and cylindricality blind hole is less than 0.5mm.
The present invention further improves and is:
A Mosaic face of 1, adjacent crystal block offers 2-4 to cylindricality blind hole.
2, the Mosaic face between adjacent seed crystal blocks is be the plane of α angle with crucible bottom, and α span is 30-60 degree.
3, the gap-fill between described cylindricality blind hole and cylindricality silicon rod has silica flour.
4, described seed crystal blocks is block seed crystal, square seed crystal or tabular seed crystal.
5, the pore diameter range of described cylindricality blind hole is 3-5mm, and the external diametrical extent of described cylindricality silicon rod is 2.5-5mm.
The present invention arranges the cylindricality blind hole of working in coordination at seed crystal blocks Mosaic face, and arranges cylindricality silicon rod in the cavity that blind hole is formed, and the blind hole at silicon rod and two ends forms joinery and its construction.Silicon rod is inserted the steadiness that blind hole can improve seed crystal blocks splicing, also the laminating degree of seed crystal Mosaic face can be improved, in heat-processed, the seed crystal expanded by heating of edge, joinery and its construction is tightr, gap becomes less, adjacent seed crystal blocks is fitted tightr, the gap preventing from seed crystal blocks edge from tilting causing becomes large, thus farthest reduce crystal dislocation defect, improve monocrystalline area ratio, improve the photoelectric transformation efficiency of solar cell, extend the life-span of battery, thus improve the performance of photovoltaic device.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Fig. 1 is the embodiment of the present invention one seed crystal splicing construction schematic diagram.
Fig. 2 is the embodiment of the present invention one seed crystal splicing construction explosive view.
Number in the figure is schematically as follows: 1-seed crystal blocks, 2-seed crystal blocks, 3-blind hole, 4-blind hole, 5-silicon rod, 6-Mosaic face.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
As Fig. 1, shown in Fig. 2, the embodiment of the present invention is applicable to the seed crystal splicing construction of directional solidification method class monocrystalline silicon cast ingot, comprise the long strip shape tabular seed crystal blocks 1 of splicing mutually, 2, adjacent seed crystal blocks 1, 2 to offer 2-4 to cylindricality blind hole 3 one to one at Mosaic face place, 4, the pore diameter range of cylindricality blind hole is 3-5mm, cylindricality blind hole 3, the axis of 4 is parallel with crucible bottom, seed crystal blocks 1, cylindricality blind hole 3 corresponding after 2 splicings, 4 pairs of spell shapes become cylindrical cavity, cylindricality silicon rod 5 is inserted with in cylindrical cavity, the external diametrical extent of cylindricality silicon rod is 2.5-5mm, cylindricality silicon rod 5 and cylindricality blind hole 3, gap between 4 is less than 0.5mm.As shown in Figure 1 and Figure 2, the Mosaic face between adjacent seed crystal blocks 1,2 is be the plane of 50 ° of angles with crucible bottom.In order to make the splicing between seed crystal blocks tightr, silica flour can be sprinkled in gap between blind hole and silicon rod, even if there is larger gap between silicon rod and blind hole like this, also the firm splicing of seed crystal blocks can be realized by the filling of silica flour, industrially be easy to realize, convenient operation, and filling silica flour post gap obtains effective compensation, reduces crystal dislocation defect.
In addition, the embodiment of the present invention additionally provides class monocrystalline silicon cast ingot seed crystal joining method, and for directional solidification method class monocrystalline silicon cast ingot, inculating crystal layer is formed by described seed crystal blocks close-packed arrays, and seed crystal blocks has the seed crystal splicing construction of the present embodiment.
In addition to the implementation, the present invention can also have other embodiments.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection domain of application claims.
Claims (7)
1. be applicable to the seed crystal splicing construction of directional solidification method class monocrystalline silicon cast ingot, comprise the seed crystal blocks of splicing mutually, it is characterized in that: adjacent seed crystal blocks offers cylindricality blind hole one to one at Mosaic face place, the axis of described cylindricality blind hole is parallel with crucible bottom, after seed crystal blocks splicing, corresponding cylindricality blind hole becomes cylindrical cavity to spell shape, be inserted with cylindricality silicon rod in described cylindrical cavity, the gap between cylindricality silicon rod and cylindricality blind hole is less than 0.5mm.
2. the seed crystal splicing construction being applicable to directional solidification method class monocrystalline silicon cast ingot according to claim 1, is characterized in that: a Mosaic face of adjacent crystal block offers 2-4 to cylindricality blind hole.
3. the seed crystal splicing construction being applicable to directional solidification method class monocrystalline silicon cast ingot according to claim 2, is characterized in that: the Mosaic face between adjacent seed crystal blocks is be the plane of α angle with crucible bottom, and α span is 30-60 degree.
4. the seed crystal splicing construction being applicable to directional solidification method class monocrystalline silicon cast ingot according to claim 1, is characterized in that: the gap-fill between described cylindricality blind hole and cylindricality silicon rod has silica flour.
5. the seed crystal splicing construction being applicable to directional solidification method class monocrystalline silicon cast ingot according to claim 1, is characterized in that: described seed crystal blocks is block seed crystal, square seed crystal or tabular seed crystal.
6. the seed crystal splicing construction being applicable to directional solidification method class monocrystalline silicon cast ingot according to claim 1, is characterized in that: the pore diameter range of described cylindricality blind hole is 3-5mm, and the external diametrical extent of described cylindricality silicon rod is 2.5-5mm.
7. class monocrystalline silicon cast ingot seed crystal joining method, for directional solidification method class monocrystalline silicon cast ingot, is characterized in that: inculating crystal layer is formed by described seed crystal blocks close-packed arrays, and described seed crystal blocks has the seed crystal splicing construction described in any one of claim 1-6.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510179731.1A CN104818528A (en) | 2015-04-15 | 2015-04-15 | Seed crystal splicing structure applicable to directional solidification like single crystal silicon cast ingot |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510179731.1A CN104818528A (en) | 2015-04-15 | 2015-04-15 | Seed crystal splicing structure applicable to directional solidification like single crystal silicon cast ingot |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105671638A (en) * | 2016-03-01 | 2016-06-15 | 山东大学 | Preparation method for large-diameter-size SiC seed crystals |
| CN106929908A (en) * | 2017-03-13 | 2017-07-07 | 江西旭阳雷迪高科技股份有限公司 | The processing method of one species single crystal seed |
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| CN101061570A (en) * | 2004-11-26 | 2007-10-24 | 波兰商艾蒙诺公司 | Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions |
| CN201287578Y (en) * | 2008-09-10 | 2009-08-12 | 张世雄 | Split joint decoration board |
| US20100193664A1 (en) * | 2009-01-30 | 2010-08-05 | Bp Corporation North America Inc. | Seed Layers and Process of Manufacturing Seed Layers |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| US20140182776A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Singapore, Pte. Ltd (Uen200614797D) | Methods For Producing Rectangular Seeds For Ingot Growth |
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2015
- 2015-04-15 CN CN201510179731.1A patent/CN104818528A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101061570A (en) * | 2004-11-26 | 2007-10-24 | 波兰商艾蒙诺公司 | Nitride single crystal seeded growth in supercritical ammonia with alkali metal ions |
| CN201287578Y (en) * | 2008-09-10 | 2009-08-12 | 张世雄 | Split joint decoration board |
| US20100193664A1 (en) * | 2009-01-30 | 2010-08-05 | Bp Corporation North America Inc. | Seed Layers and Process of Manufacturing Seed Layers |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| US20140182776A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Singapore, Pte. Ltd (Uen200614797D) | Methods For Producing Rectangular Seeds For Ingot Growth |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105671638A (en) * | 2016-03-01 | 2016-06-15 | 山东大学 | Preparation method for large-diameter-size SiC seed crystals |
| CN105671638B (en) * | 2016-03-01 | 2018-07-06 | 山东大学 | A kind of preparation method of major diameter dimension SiC seed crystals |
| CN106929908A (en) * | 2017-03-13 | 2017-07-07 | 江西旭阳雷迪高科技股份有限公司 | The processing method of one species single crystal seed |
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