CN104779333B - Large area quantum dot light emitting device - Google Patents
Large area quantum dot light emitting device Download PDFInfo
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- CN104779333B CN104779333B CN201510179347.1A CN201510179347A CN104779333B CN 104779333 B CN104779333 B CN 104779333B CN 201510179347 A CN201510179347 A CN 201510179347A CN 104779333 B CN104779333 B CN 104779333B
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- anode
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 40
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- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 238000002347 injection Methods 0.000 claims abstract description 9
- 239000007924 injection Substances 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 230000005012 migration Effects 0.000 abstract description 3
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- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
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- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A kind of large area quantum dot light emitting device, including：Substrate；Negative pole part, including cathode, electron injecting layer and the electron transfer layer stacked gradually, cathode are disposed on the substrate；Anode portion, including anode, hole injection layer and the hole transmission layer stacked gradually, anode are disposed on the substrate；And quantum luminescent layer, quantum luminescent layer connection cathode and anode portion, negative pole part are arranged on quantum luminescent layer same side with anode portion.Negative pole part is multiple with anode portion quantity, and negative pole part is alternately arranged with anode portion in array.Negative pole part and anode portion are arranged on the same side of quantum luminescent layer by above-mentioned large area quantum dot light emitting device, and light is directly emitted from quantum luminescent layer, are avoided each layer in conventional device structure and are lost caused by light, improve brightness；In addition, using the alternating pattern of array to negative pole part and anode portion, each electrode surrounding is distributed as opposite polarity electrode, sufficiently promoted the migration in electronics and hole with it is compound, improve the utilization rate of electrode.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of quantum dot light emitting display device of large area.
Background technology
Light emitting diode with quantum dots is the new technique between liquid crystal and OLED, it possesses low, low-power consumption of cost etc.
Advantage and the concern for causing people, are just gradually being widely used, are having preferable market prospects at present.Traditional quantum luminescent device
Structure is stacked, and light is ejected by sandwich construction, and each layer can all cause light the infringement without degree, in large area
Problem is more serious on quantum light-emitting device.
The content of the invention
Based on this, it is necessary to for light extraction efficiency it is not high the problem of, there is provided a kind of large area quantum dot light emitting device.
A kind of large area quantum dot light emitting device, including：Substrate；Negative pole part, including stack gradually cathode, electron injection
Layer and electron transfer layer, the cathode are set on the substrate；Anode portion, including anode, the hole injection layer stacked gradually
And hole transmission layer, the anode are set on the substrate；And quantum luminescent layer, the quantum luminescent layer connect described the moon
Pole and the anode portion, the negative pole part are arranged on the quantum luminescent layer same side with the anode portion.The negative pole part with
The anode portion quantity is multiple, and the negative pole part is alternately arranged with the anode portion in array.
In one of the embodiments, quantum luminescent layer coats the negative pole part and the anode portion.
In one of the embodiments, substrate includes successively：First insulating layer, the first conductive layer, the second insulating layer, second
Conductive layer；First insulating layer opens up first through hole, and the first through hole connects first conductive layer and the cathode；Pass through
The second through hole for being through at first insulating layer, first conductive layer and second insulating layer and setting, described second is logical
Hole connects second conductive layer and the anode.
In one of the embodiments, substrate includes successively：First insulating layer, the first conductive layer, the second insulating layer, second
Conductive layer；First insulating layer opens up first through hole, and the first through hole connects first conductive layer and the anode；Pass through
The second through hole for being through at first insulating layer, first conductive layer and second insulating layer and setting, described second is logical
Hole connects second conductive layer and the cathode.
In one of the embodiments, first through hole and the second through hole outer layer are insulating layer, and internal layer is conductive layer.
In one of the embodiments, substrate surface is provided with reflector layer.
In one of the embodiments, quantum luminescent layer doping red quantum dot, green quantum dot and blue quantum dot,
The green quantum dot, red quantum dot and blue quantum dot doping concentration reduce successively.
In one of the embodiments, red quantum dot：Green quantum dot：The concentration ratio of blue quantum dot is 8:12:
1。
Negative pole part and anode portion, are arranged on the same side of quantum luminescent layer, greatly by above-mentioned large area quantum dot light emitting device
Part light can be emitted directly without being blocked from quantum luminescent layer milli, avoid each layer in conventional device structure and light is caused not
With the loss of degree, brightness is improved.In addition, the alternating pattern of array, each electrode are used to negative pole part and anode portion
Surrounding is distributed as opposite polarity electrode, sufficiently promoted the migration in electronics and hole with it is compound, improve the utilization rate of electrode.
Brief description of the drawings
Fig. 1 is the electrode structure schematic diagram of large area quantum dot light emitting device proposed by the present invention；
Fig. 2 is the board structure schematic diagram in Fig. 1；
Fig. 3 is the structural section schematic diagram of single luminescence unit in Fig. 1.
Embodiment
To enable objects, features and advantages of the present invention more obvious understandable, below in conjunction with the accompanying drawings to the tool of the present invention
Body embodiment is described in detail.Many details are elaborated in the following description in order to fully understand the present invention.
But the invention can be embodied in many other ways as described herein, those skilled in the art can without prejudice to
Similar improvement is done in the case of intension of the present invention, therefore the present invention is not limited to the specific embodiments disclosed below.
Large area quantum dot light emitting device proposed by the present invention includes：Substrate 10, negative pole part 20, anode portion 30 and quantum
Luminescent layer 40.
Referring to Fig. 1.Specifically, substrate 10 uses large area monoblock substrate, and substrate 10 is used to carry quantum luminescent device.
Negative pole part 20, including cathode 21, electron injecting layer 22 and the electron transfer layer 23 stacked gradually.Wherein cathode 21 is set
Put on the substrate 10, electron injecting layer 22, electron transfer layer 23 are formed perpendicular to substrate on cathode 21, and electron injecting layer 22 carries
For the electronics of quantum dot light emitting, it is transmitted to luminescent layer by electron transfer layer 23 and hole generation is compound.
Anode portion 30, including anode 31, hole injection layer 32 and the hole transmission layer 33 stacked gradually.With 20 class of negative pole part
Seemingly, 30 stepped construction of anode portion is formed on substrate 10, and anode 31 is set on the substrate 10, hole injection layer 32, hole
Transmitting layer 33 is formed sequentially thereon.Negative pole part 20 forms the stratiform column structure stood on substrate 10 with anode portion 30.
The quantity of negative pole part 20 and anode portion 30 is multiple, on substrate into array alternative expression be distributed, negative pole part 20 with
Anode portion 30 is spaced.On the substrate 10 by way of mask plate, anode region is covered, cathode zone hollow out, utilizes
Evaporation manufactures cathode 21, electron injecting layer 22 and electron transfer layer 23 on substrate successively, is formed also with mask plate mode
Anode portion 30.
Quantum luminescent layer 40, it is interior containing quantum dot light emitting material, formed on negative pole part 20 and anode portion 30, passed with electronics
Defeated layer 23, hole transmission layer 33 connect, the electronics migrated by electron transfer layer 23, with by the hole that hole transmission layer 33 migrates into
The compound generation exciton of row, exciton excitation quantum point luminescent material produce the light of respective wavelength.Negative pole part 20 and 30 equal position of anode portion
In the same side of quantum luminescent layer 40, the opposite side of quantum luminescent layer 40 is set to shine directly as light-emitting surface.Quantum shines
Layer 40 is generated by spin coating or inkjet printing mode.
Large area quantum dot light emitting device proposed by the present invention, quantum luminescent layer is arranged on by negative pole part 20 and anode portion 30
40 same side, most of light can be emitted directly without being blocked from the milli of quantum luminescent layer 40, avoid conventional device structure
In each layer cause different degrees of loss to light, improve brightness.
In addition, using the alternating pattern of array to negative pole part 20 and anode portion 30, each electrode surrounding is distributed as
Opposite polarity electrode, sufficiently promoted the migration in electronics and hole with it is compound, improve the utilization rate of electrode.
Preferably, quantum luminescent layer 40 is large area structure, from top to bottom covered cathode portion 20 and anode portion 30, wherein cloudy
There is insulating layer between pole 21, electron injecting layer 22, anode 31, hole injection layer 32 and quantum luminescent layer 40, prevent from sending out with quantum
Photosphere 40 is turned on, and only keeps electron transfer layer 23, hole transmission layer 33 and quantum luminescent layer 40 to be conducted.
Referring to Fig. 2.The substrate 10 that large area quantum dot light emitting device uses includes successively for layer structure：First insulation
The 11, first conductive layer 12 of layer, the second insulating layer 13 and the second conductive layer 14.Wherein the first insulating layer 11 and the second insulating layer 13 can
It is made for substrate material itself or fills other megohmite insulants and is made.Substrate 10 is glass substrate or ceramic substrate, is had
There is certain thickness, layering digs conductive trench in plate, and conductive material is filled in two layers of conductive trench, and it is conductive to form first
12 and second conductive layer 14 of layer, negative pole part 20, anode portion 30 and quantum luminescent layer 40 are arranged on the top of the first insulating layer 11.Then
The first through hole 15 through it is opened up in the first insulating layer 11, first through hole 15 connects the first conductive layer 12 and anode 31 respectively；
The second through hole 16 is equally opened up between the second conductive layer 14 and cathode 21, the second through hole 16 runs through the first insulating layer 11, first
Conductive layer 12, the second insulating layer 13, the second conductive layer of connection 14 and cathode 21.
Further, 15 and second through hole 16 of first through hole is double-decker, and through hole internal layer is conductive material, through hole outer layer
For insulating materials, target conductive layer and the electric general character of target electrode are realized by inner layer conductive material, and it is exhausted with other Rotating fields
Edge.
In addition, through hole can also be only made of one layer of insulation system.Conducting wire is added inside through hole, conducting wire linking objective is led
Electric layer and target electrode, realize the electric general character.
In other embodiments, first through hole 15 can also connect cathode 21,16 jointed anode 31 of the second through hole, through hole and electricity
The connection corresponded manner of pole can adjust on demand.
In order to preferably describe large area quantum dot light emitting device proposed by the present invention, device is decomposed into multi-group light-emitting list
Member, every group of luminescence unit include two adjacent negative pole parts 20 and anode portion 30, and 10 structure of substrate of lower section and top
40 structure of quantum luminescent layer.
Referring to Fig. 3.First conductive layer 12 and the second conductive layer 14 are set in substrate 10, are correspondingly arranged respectively on substrate 10
The cathode 21 of quantum dot light emitting unit and anode 31.On 10 face direction of substrate, electronics note is sequentially formed on cathode 21
Enter layer 22, electron transfer layer 23；Hole injection layer 32 and hole transmission layer 33 are equally sequentially formed on anode 31.Negative pole part 20
Two column structures perpendicular to substrate 10 are formed with anode portion 30.Quantum luminescent layer 40 coats negative pole part 20 and anode portion 30,
Since quantum luminescent layer 40 and cathode 21, anode 31, electron injecting layer 22, hole injection layer 32 are equipped with insulating layer, equally and base
Hindered by the first insulating layer 11 inside plate 10, therefore only conducted with electron transfer layer 23, hole transmission layer 33.And large area
Display device is arranged in order by multiple above-mentioned luminescence units and formed.
In one embodiment, 10 surface of substrate is equipped with reflecting layer.Reflecting layer is made of metals such as silver, aluminium, is laid with advance
On the surface of the substrate 10, then on substrate borehole carries out the making of anode and cathode and each layer.Reflecting layer by quantum luminescent layer 40 to
The light of lower irradiation reflects upwards, improves the amount of light of top surface.
Embodiment described above only expresses the several embodiments of the present invention, its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (6)
- A kind of 1. large area quantum dot light emitting device, it is characterised in that including：Substrate；Negative pole part, including cathode, electron injecting layer and the electron transfer layer stacked gradually, the cathode are arranged on the substrate On；Anode portion, including anode, hole injection layer and the hole transmission layer stacked gradually, the anode are arranged on the substrate On；AndQuantum luminescent layer, the quantum luminescent layer connect the cathode and the anode portion, the negative pole part and the anode portion It is arranged on the quantum luminescent layer same side；The negative pole part is multiple with the anode portion quantity, and the negative pole part is alternately arranged with the anode portion in array, So that each electrode surrounding is distributed opposite polarity electrode.
- 2. large area quantum dot light emitting device according to claim 1, it is characterised in that the quantum luminescent layer coats institute State negative pole part and the anode portion.
- 3. large area quantum dot light emitting device according to claim 2, it is characterised in that the substrate includes successively：The One insulating layer, the first conductive layer, the second insulating layer, the second conductive layer；First insulating layer opens up first through hole, and the first through hole connects first conductive layer and the cathode；The second through hole set through first insulating layer, first conductive layer and second insulating layer, it is described Second through hole connects second conductive layer and the anode.
- 4. large area quantum dot light emitting device according to claim 2, it is characterised in that the substrate includes successively：The One insulating layer, the first conductive layer, the second insulating layer, the second conductive layer；First insulating layer opens up first through hole, and the first through hole connects first conductive layer and the anode；The second through hole set through first insulating layer, first conductive layer and second insulating layer, it is described Second through hole connects second conductive layer and the cathode.
- 5. the large area quantum dot light emitting device according to claim 3 or 4, it is characterised in that the first through hole and institute It is insulating layer to state the second through hole outer layer, and internal layer is conductive layer.
- 6. large area quantum dot light emitting device according to claim 5, it is characterised in that the substrate surface is provided with instead Photosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510179347.1A CN104779333B (en) | 2015-04-15 | 2015-04-15 | Large area quantum dot light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510179347.1A CN104779333B (en) | 2015-04-15 | 2015-04-15 | Large area quantum dot light emitting device |
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| Publication Number | Publication Date |
|---|---|
| CN104779333A CN104779333A (en) | 2015-07-15 |
| CN104779333B true CN104779333B (en) | 2018-04-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510179347.1A Expired - Fee Related CN104779333B (en) | 2015-04-15 | 2015-04-15 | Large area quantum dot light emitting device |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172568A (en) * | 2017-12-26 | 2018-06-15 | 黄星群 | A kind of preparation method of LED illuminator for electronic display |
| CN110379835B (en) * | 2019-07-17 | 2022-03-04 | 昆山国显光电有限公司 | Display panel, display device and preparation method of display panel |
| CN113831920B (en) * | 2021-09-27 | 2023-08-18 | 合肥福纳科技有限公司 | Quantum dot solution purification method, quantum dot purification solution and device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101842460A (en) * | 2007-10-30 | 2010-09-22 | 伊斯曼柯达公司 | Device containing non-blinking quantum dots |
| CN104241330A (en) * | 2014-09-05 | 2014-12-24 | 京东方科技集团股份有限公司 | Organic light emitting diode display device and manufacturing method thereof |
-
2015
- 2015-04-15 CN CN201510179347.1A patent/CN104779333B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101842460A (en) * | 2007-10-30 | 2010-09-22 | 伊斯曼柯达公司 | Device containing non-blinking quantum dots |
| CN104241330A (en) * | 2014-09-05 | 2014-12-24 | 京东方科技集团股份有限公司 | Organic light emitting diode display device and manufacturing method thereof |
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| CN104779333A (en) | 2015-07-15 |
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Granted publication date: 20180427 Termination date: 20200415 |