CN104764511A - C-axis tilt gallium nitride FBAR piezoelectric mass sensor - Google Patents
C-axis tilt gallium nitride FBAR piezoelectric mass sensor Download PDFInfo
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- CN104764511A CN104764511A CN201510193412.6A CN201510193412A CN104764511A CN 104764511 A CN104764511 A CN 104764511A CN 201510193412 A CN201510193412 A CN 201510193412A CN 104764511 A CN104764511 A CN 104764511A
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Abstract
The invention provides a c-axis tilt gallium nitride FBAR piezoelectric mass sensor which comprises a sensitive layer, an upper electrode, a signal terminal, an earthing terminal, a c-axis tilt gallium nitride FBAR piezoelectric thin film, etching holes, a lower electrode, a Bragg reflection layer and a substrate. The signal terminal and the earthing terminal are distributed at the top of the c-axis tilt gallium nitride FBAR piezoelectric thin film. The upper electrode is connected with the signal terminal and coated with the sensitive layer. The lower electrode is connected with the earthing terminal through the etching holes formed in the piezoelectric thin film. The lower electrode is arranged on the Bragg reflection layer in a deposition mode. The Bragg reflection layer is arranged on the substrate in a deposition mode. According to the c-axis tilt gallium nitride FBAR piezoelectric mass sensor, the c-axis tilt gallium nitride piezoelectric thin film is adopted for the piezoelectric thin film, certain c-axis inclination angle is preferred, and the mass sensor can normally work under a humidity environment or a liquid phase environment.
Description
Technical field
The present invention relates to a kind of mass sensor, particularly relate to a kind of piezoelectric mass sensor.
Background technology
In the last few years, the fields such as molecular biology, pathology, medical diagnostics, bacteriology are study hotspots to the research of the aspects such as protein, microorganism, nucleic acid, enzyme cell and detection, in the process of experimental study, need the atomic quality detecting them, this requires the mass sensitivity of mass sensor to reach molecular level and can work in humidity or liquid phase environment.At present in the detection of protein molecule and DNA, piezoelectric mass sensor is the more effective means of one, its mass sensitivity reaches unimolecule magnitude, possesses the requirement detecting atomic quality, has boundless application prospect in biological quality sensor field.
At present, piezoelectric crystal mass sensor mainly contains three kinds: quartz crystal microbalance (QCM), Acoustic surface wave mass sensor (SAW), film bulk acoustic mass sensor (FBAR).It is very thin that the quartz wafer of QCM can not do, and causes that the sensitivity of QCM mass sensor is not high, volume large, can not realize microminiaturized and integrated.The mass sensitivity of SAW mass sensor limits by the spacing of interdigital electrode, current photoetching process is difficult to the mass sensitivity improving SAW mass sensor further, part SAW mass sensor has specific requirement to device substrate in addition, is unfavorable for realizing the microminiaturization of SAW mass sensor and integrated.The FBAR mass sensor mass sensitivity reported at present is very high, be also easy to microminiaturized and integrated, but technology is also immature, and time in wet environment and liquid phase environment, sound wave is decayed very large in the devices, causes FBAR mass sensor cisco unity malfunction.
From analyzing above, existing piezoelectric mass sensor still have while not solving and can working in moist or liquid phase environment very high-quality sensitivity and can be microminiaturized, integrated problem, the present invention's research can be used for the detection of atomic quality in wet environment and liquid phase environment, and promotes that the mass sensor widespread use of FBAR structure is significant.
Summary of the invention
Technical problem underlying to be solved by this invention is to provide a kind of piezoelectric mass sensor, can work, and have very high-quality sensitivity in humidity or liquid phase environment.
Secondary technical matters to be solved by this invention is, above-mentioned piezoelectric mass sensor can be microminiaturized and integrated.
In order to solve above-mentioned technical matters, the invention provides a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor, comprising: sensitive layer, top electrode, signal end, earth terminal, c-axis inclination gallium nitride piezoelectric membrane, etched hole, bottom electrode, Bragg reflecting layer and substrate;
Described signal end and earth terminal are at the routed on top of c-axis inclination gallium nitride piezoelectric membrane; Described top electrode is connected with signal end, and is coated with described sensitive layer; Bottom electrode is connected with earth terminal by the etched hole being arranged on piezoelectric membrane; Bottom electrode is deposited on Bragg reflecting layer, and Bragg reflection is deposited upon on substrate.
In a preferred embodiment: described Bragg reflecting layer is by loud resistance layer and resistance layer is alternately laminated in a low voice forms.
In a preferred embodiment: the material of described substrate is gallium nitride.
In a preferred embodiment: the angle of inclination of described c-axis inclination gallium nitride piezoelectric membrane is 0 °-360 °.
In a preferred embodiment: the angle of inclination of described c-axis inclination gallium nitride piezoelectric membrane is 42.8 °.
In a preferred embodiment: described earth terminal is 2.
In a preferred embodiment: described gallium nitride substrate etching peripheral circuit.
In a preferred embodiment: resistance layer is alternately laminated in a low voice forms by three floor height acoustic resistance layers and three layers for described Bragg reflecting layer.
Compared to prior art, technical scheme of the present invention possesses following beneficial effect:
1. a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor of the present invention's proposition, the gallium nitride piezoelectric membrane that piezoelectric membrane adopts c-axis to tilt, preferably certain c-axis pitch angle, can make mass sensor normally work in wet environment or liquid phase environment.
2. a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor of proposing of the present invention, adopts FBAR structure, its technique can and conventional semiconductor processing between compatible, there is the feature of microminiaturization, integrability, and sensor mass sensitivity is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of piezoelectric mass sensor in the embodiment of the present invention;
Fig. 2 be in the embodiment of the present invention gallium nitride piezoelectric membrane c-axis tilt 42.8 ° time SiO to be measured
2frequency displacement variation diagram during mass change;
Fig. 3 be in the embodiment of the present invention gallium nitride piezoelectric membrane c-axis tilt 60 ° time SiO to be measured
2frequency displacement variation diagram during mass change;
SiO to be measured when Fig. 4 is gallium nitride piezoelectric membrane c-axis inclination 0-90 ° in the embodiment of the present invention
2the graph of a relation of mass change and absolute frequency displacement.
Embodiment
Hereafter the present invention will be further described in conjunction with the accompanying drawings and embodiments.
Shown in composition graphs 1, a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor, comprises sensitive layer 1, top electrode 2, signal end 3, earth terminal 4, piezoelectric membrane 5, etched hole 6, bottom electrode 7, Bragg reflecting layer 8 and substrate 9.
In this specific embodiment, gallium nitride substrate 9, on the one hand as the supporting layer of sensor, can etch peripheral circuit as semiconductor on the other hand and make itself and piezoelectric mass sensor integrated, deposit Bragg reflecting layer 8 at gallium nitride substrate 9 upper surface; Described Bragg reflecting layer 8 by three floor height acoustic resistance layers and three layers in a low voice resistance layer be alternately laminated forming.Bragg reflecting layer 8 upper surface deposition bottom electrode 7, the gallium nitride piezoelectric membrane 5 that bottom electrode 7 upper surface deposition c-axis tilts, the c-axis tilt adjustable of gallium nitride piezoelectric membrane, gallium nitride piezoelectric membrane 5 upper surface arrangement device signal end 3, two earth terminals 4 and top electrode 2, top electrode 2 is connected with signal end 3.At top electrode 2 surface coating sensitive layer 1, two earth terminals 4 by the etched hole 6 in gallium nitride piezoelectric membrane 5 and bottom electrode 7 conducting.
C-axis inclination gallium nitride FBAR piezoelectric mass sensor operationally, c-axis inclination gallium nitride piezoelectric membrane vibrates and produces shearing wave under piezoelectric effect effect, shearing wave is decayed very little in wet environment and liquid phase environment, utilize the shearing wave produced, under wet environment and liquid phase environment when the quality of sensitive layer 1 changes, the resonance frequency generation frequency displacement of c-axis inclination gallium nitride FBAR piezoelectric mass sensor, the quality of test substance is detected by the frequency displacement detecting its resonance frequency, realize c-axis inclination gallium nitride FBAR piezoelectric mass sensor to work in wet environment and liquid phase environment.
In order to verify the feasibility of the c-axis inclination gallium nitride FBAR piezoelectric mass sensor that the present invention proposes, carry out analog simulation.The useful area of top electrode 2 is 300 μm × 300 μm, and the thickness of c-axis inclination gallium nitride piezoelectric membrane 5 is 2 μm, and determinand is chosen as SiO
2, determinand can select other materials, only need change sensitive layer 1.
Fig. 2 and Fig. 3 be c-axis inclination gallium nitride piezoelectric membrane 5 when inclination 42.8 ° and 60 °, at different quality SiO
2time resonance frequency shifts, when inclination 42.8 °, only there is shearing wave in c-axis inclination gallium nitride FBAR piezoelectric mass sensor inside, and when inclination 60 °, shearing wave and compressional wave exist simultaneously.Fig. 4 gives c-axis inclination gallium nitride piezoelectric membrane 5 when inclination 0 °-90 °, SiO to be measured
2the relation of mass change and absolute frequency displacement, straight slope is the SiO under all angles
2mass sensitivity, be about-820cm
2/ g.Can find out, the c-axis inclination gallium nitride FBAR piezoelectric mass sensor that the present invention proposes normally can work under humidity or liquid phase environment, and has very high mass sensitivity.
The above; be only the present invention's preferably embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (8)
1. a c-axis inclination gallium nitride FBAR piezoelectric mass sensor, is characterized in that comprising: sensitive layer, top electrode, signal end, earth terminal, c-axis inclination gallium nitride piezoelectric membrane, etched hole, bottom electrode, Bragg reflecting layer and substrate;
Described signal end and earth terminal are at the routed on top of c-axis inclination gallium nitride piezoelectric membrane; Described top electrode is connected with signal end, and is coated with described sensitive layer; Bottom electrode is connected with earth terminal by the etched hole being arranged on piezoelectric membrane; Bottom electrode is deposited on Bragg reflecting layer, and Bragg reflection is deposited upon on substrate.
2. a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor according to claim 1, is characterized in that: described Bragg reflecting layer is by loud resistance layer and resistance layer is alternately laminated in a low voice forms.
3. a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor according to claim 1, is characterized in that: the material of described substrate is gallium nitride.
4. a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor according to claim 1, is characterized in that: the angle of inclination of described c-axis inclination gallium nitride piezoelectric membrane is 0 °-360 °.
5. a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor according to claim 1, is characterized in that: the angle of inclination of described c-axis inclination gallium nitride piezoelectric membrane is 42.8 °.
6. a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor according to claim 1, is characterized in that: described earth terminal is 2.
7. a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor according to claim 3, is characterized in that: described gallium nitride substrate etching peripheral circuit.
8. a kind of c-axis inclination gallium nitride FBAR piezoelectric mass sensor according to claim 2, is characterized in that: resistance layer is alternately laminated in a low voice forms by three floor height acoustic resistance layers and three layers for described Bragg reflecting layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510193412.6A CN104764511A (en) | 2015-04-22 | 2015-04-22 | C-axis tilt gallium nitride FBAR piezoelectric mass sensor |
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| CN201510193412.6A CN104764511A (en) | 2015-04-22 | 2015-04-22 | C-axis tilt gallium nitride FBAR piezoelectric mass sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107525610A (en) * | 2017-08-10 | 2017-12-29 | 中北大学 | FBAR micropressure sensors based on thickness direction excitation shear wave modes |
| CN107643228A (en) * | 2017-08-31 | 2018-01-30 | 中国船舶重工集团公司第七〇九研究所 | Measure chip of mercury vapour and preparation method thereof, sensor and its application method |
| WO2020062675A1 (en) * | 2018-09-25 | 2020-04-02 | 深圳大学 | Acoustic micro-mass sensor and detection method |
Citations (2)
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|---|---|---|---|---|
| CN101775584A (en) * | 2010-01-08 | 2010-07-14 | 湖北大学 | Preparation method of c-axis inclined AlN thin film with homogeneous buffer layer |
| CN102664602A (en) * | 2012-05-15 | 2012-09-12 | 浙江大学 | Embedded electrode lateral field excitation-based film bulk acoustic resonator (FBAR) and manufacturing method thereof |
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2015
- 2015-04-22 CN CN201510193412.6A patent/CN104764511A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101775584A (en) * | 2010-01-08 | 2010-07-14 | 湖北大学 | Preparation method of c-axis inclined AlN thin film with homogeneous buffer layer |
| CN102664602A (en) * | 2012-05-15 | 2012-09-12 | 浙江大学 | Embedded electrode lateral field excitation-based film bulk acoustic resonator (FBAR) and manufacturing method thereof |
Non-Patent Citations (2)
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| 熊娟等: "基于倾斜AlN薄膜的体声波质量传感器的制备及性能分析", 《传感技术学报》 * |
| 王德苗等: "薄膜声体波谐振器（FBAR）的研究进展", 《电子元件与材料》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107525610A (en) * | 2017-08-10 | 2017-12-29 | 中北大学 | FBAR micropressure sensors based on thickness direction excitation shear wave modes |
| CN107525610B (en) * | 2017-08-10 | 2020-02-07 | 中北大学 | FBAR micro-pressure sensor based on shear wave mode excited in thickness direction |
| CN107643228A (en) * | 2017-08-31 | 2018-01-30 | 中国船舶重工集团公司第七〇九研究所 | Measure chip of mercury vapour and preparation method thereof, sensor and its application method |
| WO2020062675A1 (en) * | 2018-09-25 | 2020-04-02 | 深圳大学 | Acoustic micro-mass sensor and detection method |
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