CN104755569B - 可固化有机硅组合物、其固化产物及光学半导体器件 - Google Patents
可固化有机硅组合物、其固化产物及光学半导体器件 Download PDFInfo
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- CN104755569B CN104755569B CN201380055100.8A CN201380055100A CN104755569B CN 104755569 B CN104755569 B CN 104755569B CN 201380055100 A CN201380055100 A CN 201380055100A CN 104755569 B CN104755569 B CN 104755569B
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- 229910052703 rhodium Inorganic materials 0.000 description 1
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- 238000003786 synthesis reaction Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- VKELFFBBMBRBHX-UHFFFAOYSA-N trichloro(pyren-1-yl)silane Chemical compound C1=C2C([Si](Cl)(Cl)Cl)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 VKELFFBBMBRBHX-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- SEUGQQYRPAEMFC-UHFFFAOYSA-N triethoxy(pyren-1-yl)silane Chemical compound C1=C2C([Si](OCC)(OCC)OCC)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 SEUGQQYRPAEMFC-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- GIULLRLLAPLKNF-UHFFFAOYSA-N trimethoxy(pyren-1-yl)silane Chemical compound C1=C2C([Si](OC)(OC)OC)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 GIULLRLLAPLKNF-UHFFFAOYSA-N 0.000 description 1
- AAPLIUHOKVUFCC-UHFFFAOYSA-N trimethylsilanol Chemical compound C[Si](C)(C)O AAPLIUHOKVUFCC-UHFFFAOYSA-N 0.000 description 1
- QHUNJMXHQHHWQP-UHFFFAOYSA-N trimethylsilyl acetate Chemical compound CC(=O)O[Si](C)(C)C QHUNJMXHQHHWQP-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
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- C—CHEMISTRY; METALLURGY
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- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
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- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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Abstract
本发明涉及一种可固化有机硅组合物,其包含:(A)由具体平均单元式表示并在分子中具有至少两个烯基基团的有机聚硅氧烷,(B)在分子中具有至少两个烯基基团并且不具有任何硅键合的氢原子的任选直链有机聚硅氧烷,(C)在分子中具有至少两个硅键合的氢原子的有机聚硅氧烷,其中该组分的至少80质量%包含由式H(CH3)2SiO(C6H5)2SiOSi(CH3)2H表示的有机三硅氧烷,以及(D)硅氢加成反应催化剂。所述可固化有机硅组合物具有优异的可操作性和高反应性并形成具有低透气性的固化产物。
Description
技术领域
本发明涉及一种可固化有机硅组合物、通过固化该组合物形成的固化产物以及使用该组合物制备的光学半导体器件。
本发明要求提交于2012年10月24日的日本专利申请No.2012-235184的优先权,该专利申请的内容以引用方式并入本文中。
背景技术
可固化有机硅组合物用作光学半导体器件中的光学半导体元件诸如发光二极管(LED)的密封材料或保护涂料。然而,由于可固化有机硅组合物的固化产物的透气性高,因此在用于具有高光学强度和大量热量生成的高亮度LED中时出现问题,诸如腐蚀性气体引起的密封材料变色以及LED基板上的镀银层的腐蚀引起的亮度降低。
因此,在日本未经审查的专利申请公布No.2012-052045中提出了包含具有甲基苯基乙烯基硅氧烷单元的支链有机聚硅氧烷、有机氢聚硅氧烷和加成反应催化剂的可固化有机硅组合物作为形成具有低透气性的固化产物的可固化有机硅组合物。
然而,此类可固化有机硅组合物具有高粘度、较差可操作性和较慢的固化反应速率,这导致完成固化反应需要大量时间和能量的问题。
本发明的一个目标是提供具有优异的可操作性和高反应性并形成具有低透气性的固化产物的可固化有机硅组合物。本发明的另一个目标是提供具有低透气性的固化产物并另外提供具有优异可靠性的光学半导体器件。
发明内容
本发明的可固化有机硅组合物包含:
(A)在分子中具有至少两个烯基基团并由以下平均单元式表示的有机聚硅氧烷:
(R1R2R3SiO1/2)a(R4 2SiO2/2)b(R2SiO3/2)c
其中,R1为具有1至12个碳的烷基基团;R2为相同或不同的具有6至20个碳的芳基基团或具有7至20个碳的芳烷基基团;R3为具有2至12个碳的烯基基团;R4为相同或不同的具有1至12个碳的烷基基团、具有2至12个碳的烯基基团、或苯基基团;并且“a”、“b”和“c”分别为满足0.01≤a≤0.5、0≤b≤0.7、0.1≤c<0.9并且a+b+c=1的数值;
(B)以此组合物的0至70质量%的在分子中具有至少两个烯基基团并且不具有任何硅键合的氢原子的直链有机聚硅氧烷;
(C)以使得此组分中的硅键合的氢原子的量是0.1摩尔至5摩尔每1摩尔组分(A)和(B)中的总烯基基团的量的在分子中具有至少两个硅键合的氢原子的有机聚硅氧烷,并且此组分的至少80质量%包含由以下式表示的有机三硅氧烷:
H(CH3)2SiO(C6H5)2SiOSi(CH3)2H;以及
(D)有效量的硅氢加成反应催化剂。
本发明的固化产物通过固化上述可固化有机硅组合物而形成。
本发明的光学半导体器件通过用上述可固化有机硅组合物的固化产物密封光学半导体元件生产。
本发明的效果
本发明的可固化有机硅组合物的特征在于具有优异的可操作性和高反应性并形成具有低透气性的固化产物。此外,本发明的固化产物的特征在于透气性低。本发明的光学半导体器件的特征在于具有优异可靠性。
附图说明
图1是作为本发明的光学半导体器件的例子的LED的横截面图。
具体实施方式
首先,将详细描述本发明的可固化有机硅组合物。
作为该组合物的主要组分的组分(A)的有机聚硅氧烷由以下平均单元式表示:
(R1R2R3SiO1/2)a(R4 2SiO2/2)b(R2SiO3/2)c
并在分子中具有至少两个烯基基团。
在式中,R1为具有1至12个碳的烷基基团,其例子包括甲基基团、乙基基团、丙基基团、丁基基团、戊基基团、己基基团、庚基基团、辛基基团、壬基基团、癸基基团、十一烷基基团和十二烷基基团,并且其中甲基基团为优选的。R2为相同或不同的具有6至20个碳的芳基基团或具有7至20个碳的芳烷基基团。R2的芳基基团的例子包括苯基基团、甲苯基基团、二甲苯基基团、萘基基团、蒽基基团、菲基基团、芘基基团以及其中这些芳基基团的氢原子被烷基基团诸如甲基基团和乙基基团、烷氧基基团诸如甲氧基基团和乙氧基基团、或卤素原子诸如氯原子和溴原子取代的基团。其中苯基基团和萘基基团是优选的。R2的芳烷基基团的例子包括苄基基团、苯乙基基团、萘基乙基基团、萘基丙基基团、蒽基乙基基团、菲基乙基基团、芘基乙基基团以及其中这些芳烷基基团的氢原子被烷基基团诸如甲基基团和乙基基团、烷氧基基团诸如甲氧基基团和乙氧基基团、或卤素原子诸如氯原子和溴原子取代的基团。此外,R3为具有2至12个碳的烯基基团,其例子包括乙烯基基团、烯丙基基团、丁烯基基团、戊烯基基团、己烯基基团、庚烯基基团、辛烯基基团、壬烯基基团、癸烯基基团、十一碳烯基基团和十二碳烯基基团,并且其中乙烯基基团为优选的。R4为相同或不同的具有1至12个碳的烷基基团、具有2至12个碳的烯基基团、或苯基基团。R4的烷基基团的例子包括针对R1所述的相同基团。R4的烯基基团的例子包括针对R3所述的相同基团。
此外,在该式中,“a”、“b”和“c”分别为满足0.01≤a≤0.5、0≤b≤0.7、0.1≤c<0.9并且a+b+c=1的数值,优选为满足0.05≤a≤0.5、0≤b≤0.5、0.4≤c<0.85并且a+b+c=1的数值,并甚至更优选为满足0.05≤a≤0.4、0≤b≤0.4、0.45≤c<0.8并且a+b+c=1的数值。这是因为当“a”大于或等于上述范围的下限时,固化产物的透气性降低,并且当“a”小于或等于上述范围的上限时,固化产物具有足够强度。这还因为当“b”小于或等于上述范围的上限时,固化产物的硬度是有利的并且可靠性得以改善。这还因为当“c”大于或等于上述范围的下限时,固化产物的折射指数是有利的,并且当“c”小于或等于上述范围的上限时,固化产物的机械特性得以改善。
组分(A)的有机聚硅氧烷由上述平均单元式表示,但在不削弱本发明目标的范围内也可具有由式R1 3SiO1/2表示的硅氧烷单元、由式R1R2 2SiO1/2表示的硅氧烷单元、由式R1 2R2SiO1/2表示的硅氧烷单元、由式R1R3 2SiO1/2表示的硅氧烷单元、由式R1SiO3/2表示的硅氧烷单元或由式SiO4/2表示的硅氧烷单元。在这些式中,R1为具有1至12个碳的烷基基团,并且其例子与上述基团相同。另外,在这些式中,R2为具有6至20个碳的芳基基团或具有7至20个碳的芳烷基基团,并且其例子与上述基团相同。在这些式中,R3为具有2至12个碳的烯基基团,并且其例子与上述基团相同。在不削弱本发明目标的范围内有机聚硅氧烷也可具有硅键合的烷氧基基团诸如甲氧基基团、乙氧基基团和丙氧基基团或者硅键合的羟基基团。
制备此类有机聚硅氧烷的方法的例子为在存在酸或碱的情况下使由以下通式(I)
R2SiX3
表示的硅烷化合物、由以下通式(II-1)
R1R2R3SiOSiR1R2R3
表示的二硅氧烷和/或由以下通式(II-2)
R1R2R3SiX
表示的硅烷化合物水解/缩合的方法。
由以下通式(I)
R2SiX3
表示的硅烷化合物为用于将由式R2SiO3/2表示的硅氧烷单元引入有机聚硅氧烷中的原料。在这些式中,R2为具有6至20个碳的芳基基团或具有7至20个碳的芳烷基基团,其例子与上述基团同义。其中苯基基团或萘基基团是优选的。另外,在这些式中,X为烷氧基基团、酰氧基基团、卤素原子或羟基基团。X的烷氧基基团的例子包括甲氧基基团、乙氧基基团和丙氧基基团。X的酰氧基基团的例子包括乙酰氧基基团。X的卤素原子的例子包括氯原子和溴原子。
此类硅烷化合物的例子包括烷氧基硅烷,诸如苯基三甲氧基硅烷、萘基三甲氧基硅烷、蒽基三甲氧基硅烷、菲基三甲氧基硅烷、芘基三甲氧基硅烷、苯基三乙氧基硅烷、萘基三乙氧基硅烷、蒽基三乙氧基硅烷、菲基三乙氧基硅烷和芘基三乙氧基硅烷;酰氧基硅烷,诸如苯基三乙酰氧基硅烷、萘基三乙酰氧基硅烷、蒽基三乙酰氧基硅烷、菲基三乙酰氧基硅烷和芘基三乙酰氧基硅烷;卤代硅烷,诸如苯基三氯硅烷、萘基三氯硅烷、蒽基三氯硅烷、菲基三氯硅烷和芘基三氯硅烷;以及羟基硅烷,诸如苯基三羟基硅烷、萘基三羟基硅烷、蒽基三羟基硅烷、菲基三羟基硅烷和芘基三羟基硅烷。
由以下通式(II-1)
R1R2R3SiOSiR1R2R3
表示的二硅氧烷为用于将由式R1R2R3SiO1/2表示的硅氧烷单元引入有机聚硅氧烷中的原料。在这些式中,R1为具有1至12个碳的烷基基团,其例子与上述基团同义,并且其中甲基基团为优选的。另外,在这些式中,R2为具有6至20个碳的芳基基团或具有7至20个碳的芳烷基基团,其例子与上述基团同义,并且其中苯基基团或萘基基团为优选的。在这些式中,R3为具有2至12个碳的烯基基团,其例子与上述基团同义,并且其中乙烯基基团为优选的。
此类二硅氧烷的例子为1,3-二乙烯基-1,3-二苯基-1,3-二甲基二硅氧烷。
由以下通式(II-2)
R1R2R3SiX
表示的硅烷化合物也是用于将由式R1R2R3SiO1/2表示的硅氧烷单元引入有机聚硅氧烷中的原料。在这些式中,R1为具有1至12个碳的烷基基团,其例子与上述基团同义,并且其中甲基基团为优选的。另外,在这些式中,R2为具有6至20个碳的芳基基团或具有7至20个碳的芳烷基基团,其例子与上述基团同义,并且苯基基团或萘基基团为优选的。在这些式中,R3为具有2至12个碳的烯基基团,其例子与上述基团同义,并且其中乙烯基基团为优选的。此外,在这些式中,X为烷氧基基团、酰氧基基团、卤素原子或羟基基团;并且其例子与上述基团相同。
此类硅烷化合物的例子包括烷氧基硅烷,诸如甲基苯基乙烯基甲氧基硅烷和甲基苯基乙烯基乙氧基硅烷;乙酰氧基硅烷,诸如甲基苯基乙烯基乙酰氧基硅烷;氯硅烷,诸如甲基苯基乙烯基氯硅烷;以及羟基硅烷,诸如甲基苯基乙烯基羟基硅烷。
在上述制备方法中,用于引入由式R4 2SiO2/2表示的硅氧烷单元的硅烷化合物或环状有机硅化合物或者用于引入由式R1 3SiO1/2表示的硅氧烷单元、由式R1R2 2SiO1/2表示的硅氧烷单元、由式R1 2R2SiO1/2表示的硅氧烷单元、由式R1R3 2SiO1/2表示的硅氧烷单元、由式R1SiO3/2表示的硅氧烷单元或由式SiO4/2表示的硅氧烷单元的硅烷化合物或硅烷低聚物可在必要时与有机聚硅氧烷反应。在这些式中,R1为具有1至12个碳的烷基基团,并且其例子与上述基团相同。另外,在这些式中,R2为具有6至20个碳的芳基基团或具有7至20个碳的芳烷基基团,并且其例子与上述基团相同。在这些式中,R3为具有2至12个碳的烯基基团,并且其例子与上述基团相同。在这些式中,R4为相同或不同的具有1至12个碳的烷基基团、具有2至12个碳的烯基基团、或苯基基团,并且其例子与上述基团相同。
此类硅烷化合物的例子包括烷氧基硅烷,诸如二甲基二甲氧基硅烷、二甲基二乙氧基硅烷、二乙基二甲氧基硅烷、二乙基二乙氧基硅烷、甲基苯基二甲氧基硅烷、甲基苯基二乙氧基硅烷、二苯基二甲氧基硅烷、二苯基二乙氧基硅烷、甲基乙烯基二甲氧基硅烷、甲基乙烯基二乙氧基硅烷、苯基乙烯基二甲氧基硅烷、苯基乙烯基二乙氧基硅烷、三甲基甲氧基硅烷、三甲基乙氧基硅烷、甲基二苯基甲氧基硅烷、甲基二苯基乙氧基硅烷、甲基三甲氧基硅烷、四甲氧基硅烷和四乙氧基硅烷;乙酰氧基硅烷,诸如二甲基二乙酰氧基硅烷、甲基苯基二乙酰氧基硅烷、二苯基二乙酰氧基硅烷、甲基乙烯基二乙酰氧基硅烷、苯基乙烯基二乙酰氧基硅烷、三甲基乙酰氧基硅烷、甲基二苯基乙酰氧基硅烷、甲基三乙酰氧基硅烷和四乙酰氧基硅烷;卤代硅烷,诸如二甲基二氯硅烷、二乙基二氯硅烷、甲基苯基二氯硅烷、二苯基二氯硅烷、甲基乙烯基二氯硅烷、苯基乙烯基二氯硅烷、三甲基氯硅烷、甲基二苯基氯硅烷、甲基三氯硅烷和四氯硅烷;以及羟基硅烷,诸如二甲基二羟基硅烷、二乙基二羟基硅烷、甲基苯基二羟基硅烷、二苯基二羟基硅烷、甲基乙烯基二羟基硅烷、三甲基羟基硅烷、甲基二苯基羟基硅烷和甲基三羟基硅烷。此类环状有机硅化合物的例子包括环状二甲基硅氧烷低聚物、环状苯基甲基硅氧烷低聚物和环状二苯基硅氧烷低聚物。另外,硅烷低聚物的例子包括四甲氧基硅烷的部分水解产物和四乙氧基硅烷的部分水解产物。
上述制备方法的特征在于硅烷化合物(I)、二硅氧烷(II-1)和/或硅烷化合物(II-2)以及其他硅烷化合物、环状有机硅化合物或硅烷低聚物在必要时在存在酸或碱的情况下水解/缩合。
可使用的酸的例子有盐酸、乙酸、甲酸、硝酸、草酸、硫酸、磷酸、多磷酸、多羧酸、三氟甲烷硫酸和离子交换树脂。另外,所用的碱的例子有无机碱,诸如氢氧化钾、氢氧化钠等;以及有机碱化合物,诸如三乙胺、二乙胺、单乙醇胺、二乙醇胺、三乙醇胺、氨水、四甲基氢氧化铵、具有氨基基团的烷氧基硅烷、氨基丙基三甲氧基硅烷等。
另外,可在制备方法中使用有机溶剂。所用有机溶剂的例子有醚、酮、醋酸酯、芳族或脂族烃和γ-丁内酯;以及两种或更多种类型的此类溶剂的混合物。优选的有机溶剂的例子有丙二醇单甲醚、丙二醇单甲醚醋酸酯、丙二醇单乙醚、丙二醇单丙醚、丙二醇单丁醚、丙二醇单叔丁醚、γ-丁内酯、甲苯和二甲苯。
为了加速制备方法中的每种组分的水解和缩合反应,优选加入水或者水和醇的混合溶液。甲醇和乙醇为醇的优选例子。通过加热促进该反应,并且如果使用有机溶剂,则反应优选地在有机溶剂的回流温度下进行。
作为用于赋予固化产物柔软性、延展性和柔韧性的任选组分的组分(B)为在分子中具有至少两个烯基基团并且不具有硅键合的氢原子的直链有机聚硅氧烷。组分(B)中的烯基基团的例子包括具有2至12个碳的烯基基团,诸如乙烯基基团、烯丙基基团、丁烯基基团、戊烯基基团、己烯基基团、庚烯基基团、辛烯基基团、壬烯基基团、癸烯基基团、十一碳烯基基团和十二碳烯基基团。其中乙烯基基团是优选的。在组分(B)中除了烯基基团外键合至硅原子的基团的例子包括具有1至12个碳的烷基基团,诸如甲基基团、乙基基团、丙基基团、丁基基团、戊基基团、己基基团、庚基基团、辛基基团、壬基基团、癸基基团、十一烷基基团和十二烷基基团;具有6至20个碳的芳基基团,诸如苯基基团、甲苯基基团、二甲苯基基团、萘基基团、蒽基基团、菲基基团、芘基基团以及其中这些芳基基团的氢原子被烷基基团诸如甲基基团和乙基基团、烷氧基基团诸如甲氧基基团和乙氧基基团、或卤素原子诸如氯原子和溴原子取代的基团;具有7至20个碳的芳烷基基团,诸如苄基基团、苯乙基基团、萘基乙基基团、萘基丙基基团、蒽基乙基基团、菲基乙基基团、芘基乙基基团以及其中这些芳烷基基团的氢原子被烷基基团诸如甲基基团和乙基基团、烷氧基基团诸如甲氧基基团和乙氧基基团、或卤素原子诸如氯原子和溴原子取代的基团;以及具有1至12个碳的卤代烷基基团,诸如氯甲基基团和3,3,3-三氟丙基基团。其中甲基基团和苯基基团为优选的。
此类组分(B)的例子包括在两个分子末端处均被三甲基甲硅烷氧基基团封端的二甲基硅氧烷和甲基乙烯基硅氧烷的共聚物、在两个分子末端处均被三甲基甲硅烷氧基基团封端的甲基乙烯基聚硅氧烷、在两个分子末端处均被三甲基甲硅烷氧基基团封端的二甲基硅氧烷、甲基乙烯基硅氧烷和甲基苯基硅氧烷的共聚物、在两个分子末端处均被二甲基乙烯基甲硅烷氧基基团封端的二甲基聚硅氧烷、在两个分子末端处均被二甲基乙烯基甲硅烷氧基基团封端的甲基乙烯基聚硅氧烷、在两个分子末端处均被二甲基乙烯基甲硅烷氧基基团封端的二甲基硅氧烷和甲基乙烯基硅氧烷的共聚物、在两个分子末端处均被二甲基乙烯基甲硅烷氧基基团封端的二甲基硅氧烷、甲基乙烯基硅氧烷和甲基苯基硅氧烷的共聚物以及两种或更多种类型的这些有机聚硅氧烷的混合物。
该组合物中的组分(B)的含量在相对于该组合物的0至70质量%范围内、优选在0至50质量%范围内并且特别优选在0至40质量%范围内。这是因为当组分(B)的含量小于或等于上述范围的上限时,可以赋予固化产物柔软性、延展性和柔韧性而不增加固化产物的透气性,从而使得可以改善使用该组合物生产的光学半导体器件的可靠性。
组分(C)为本发明组合物的交联剂并且为分子中具有至少2个硅键合的氢原子的有机聚硅氧烷,并且该组分的至少80质量%包含由以下式表示的有机三硅氧烷:
H(CH3)2SiO(C6H5)2SiOSi(CH3)2H。
这是因为当上述有机三硅氧烷用作交联剂时,化合物对上述组分(A)具有良好反应性,这使得可以快速固化组合物。此外,有机三硅氧烷诸如上述的有机三硅氧烷能够降低组合物的粘度以及提高组合物的可操作性。
组分(C)具有至少80质量%的上述有机三硅氧烷,并且其他的有机聚硅氧烷没有特别限制,只要分子中存在至少两个硅键合的氢原子即可。此类有机聚硅氧烷可具有直链、支链、环状、网状或部分支链的直链分子结构。在该有机聚硅氧烷中键合至硅原子的其他基团的例子包括具有1至12个碳的烷基基团、具有6至20个碳的芳基基团、具有7至20个碳的芳烷基基团以及具有1至12个碳的卤代烷基基团。这些基团的例子包括与上述那些相同的基团,并且甲基基团和苯基基团为优选的。
其他有机聚硅氧烷的例子有在分子两个末端处均被三甲基甲硅烷氧基基团封端的甲基氢聚硅氧烷、在两个分子末端处均被三甲基甲硅烷氧基基团封端的二甲基硅氧烷和甲基氢硅氧烷的共聚物、在两个分子末端处均被三甲基甲硅烷氧基基团封端的二甲基硅氧烷、甲基氢硅氧烷和甲基苯基硅氧烷的共聚物、在两个分子末端处均被二甲基氢甲硅烷氧基基团封端的二甲基聚硅氧烷、在两个分子末端处均被二甲基氢甲硅烷氧基基团封端的二甲基硅氧烷和甲基苯基硅氧烷的共聚物、在两个分子末端处均被二甲基氢甲硅烷氧基基团封端的甲基苯基聚硅氧烷、由通过通式R'3SiO1/2表示的硅氧烷单元和通过通式R'2HSiO1/2表示的硅氧烷单元以及通过式SiO4/2表示的硅氧烷单元构成的有机聚硅氧烷共聚物、由通过通式R'2HSiO1/2表示的硅氧烷单元以及通过式SiO4/2表示的硅氧烷单元构成的有机聚硅氧烷共聚物、由通过通式R'HSiO2/2表示的硅氧烷单元和通过通式R'SiO3/2表示的硅氧烷单元或通过式HSiO3/2表示的硅氧烷单元构成的有机聚硅氧烷共聚物,以及两种或更多种此类有机聚硅氧烷的混合物。在这些式中,R'为具有1至12个碳的烷基基团、具有6至20个碳的芳基基团、具有7至20个碳的芳烷基基团、或具有1至12个碳的卤代烷基基团,并且其例子与上述基团相同。
本发明组合物中的组分(C)的含量(以组分(A)和(B)中每1摩尔总烯基基团计)在一定范围内,使得组分(C)中的硅键合的氢原子在0.1至5摩尔的范围内,并且优选地在0.5至2摩尔的范围内。这是因为当组分(C)的含量大于或等于上述范围的下限时,组合物充分固化,并且当该含量小于或等于上述范围的上限时,固化产物的耐热性得以改善,从而使得可以改善使用该组合物生产的光学半导体器件的可靠性。
组分(D)为用于加速该组合物的固化的硅氢加成反应催化剂,并且例子包括铂基催化剂、铑基催化剂和钯基催化剂。特别是,组分(D)优选为铂基催化剂,使得可显著加速本发明组合物的固化。铂基催化剂的例子包括铂细粉、氯铂酸、氯铂酸的醇溶液、铂-烯基硅氧烷络合物、铂-烯烃络合物和铂-羰基络合物,其中铂-烯基硅氧烷络合物是优选的。
该组合物中的组分(D)的含量为用于加速组合物的固化的有效量。具体地讲,为了能够充分加速该组合物的固化反应,组分(D)的含量优选为一定的量,以使得组分(D)中的催化剂金属相对于该组合物以质量单位计在0.01至500ppm范围内、更优选地在0.01至100ppm范围内并且特别优选地在0.01至50ppm范围内。
该组合物也可包含粘附赋予剂,以便改善固化产物相对于在固化过程期间组合物所接触的基板的粘附性。优选的粘附赋予剂为在分子中具有键合至硅原子的至少一个烷氧基基团的有机硅化合物。该烷氧基基团的例子有甲氧基基团、乙氧基基团、丙氧基基团、丁氧基基团和甲氧基乙氧基基团;并且甲氧基基团为特别优选的。此外,键合至该有机硅化合物的硅原子的非烷氧基基团的例子有取代的或未取代的一价烃基团,诸如烷基基团、烯基基团、芳基基团、芳烷基基团和卤代烷基基团;含环氧基的一价有机基团,诸如3-缩水甘油氧基丙基基团、4-缩水甘油氧基丁基基团或类似的缩水甘油氧基烷基基团;2-(3,4-环氧环己基)乙基基团、3-(3,4-环氧环己基)丙基基团或类似的环氧环己基烷基基团;或4-环氧乙烷基丁基基团、8-环氧乙烷基辛基基团或类似的环氧乙烷基烷基基团;含丙烯酸基团的一价有机基团,诸如3-甲基丙烯酰氧基丙基基团;和氢原子。该有机硅化合物优选具有硅键合的烯基基团或硅键合的氢原子。此外,由于能够赋予对于各种类型基板的良好粘附性,因此该有机硅化合物优选在分子中具有至少一个含环氧基团的一价有机基团。这种类型的有机硅化合物的例子有有机硅烷化合物、有机硅氧烷低聚物和烷基硅酸酯。有机硅氧烷低聚物或烷基硅酸酯的分子结构的例子有直链结构、部分支化的直链结构、支链结构、环状结构和网状结构。直链结构、支链结构和网状结构为特别优选的。这种类型的有机硅化合物的例子有硅烷化合物,诸如3-缩水甘油氧基丙基三甲氧基硅烷、2-(3,4-环氧环己基)乙基三甲氧基硅烷、3-甲基丙烯酰氧基丙基三甲氧基硅烷等;在分子中具有至少一个硅键合的烯基基团或硅键合的氢原子以及至少一个硅键合的烷氧基基团的硅氧烷化合物;在分子中具有至少一个硅键合的烷氧基基团的硅烷化合物或硅氧烷化合物以及在分子中具有至少一个硅键合的羟基基团或至少一个硅键合的烯基基团的硅氧烷化合物的混合物;以及聚硅酸甲酯、聚硅酸乙酯和含环氧基团的聚硅酸乙酯。在该组合物中粘附赋予剂含量没有特别限制,但相对于100总质量份的上述组分(A)至(D)优选在0.01至10质量份的范围内。
可将反应抑制剂,例如炔醇,诸如2-甲基-3-丁炔-2-醇、3,5-二甲基-1-己炔-3-醇和2-苯基-3-丁炔-2-醇;烯炔化合物,诸如3-甲基-3-戊烯-1-炔或3,5-二甲基-3-己烯-1-炔;或者1,3,5,7-四甲基-1,3,5,7-四乙烯基环四硅氧烷、1,3,5,7-四甲基-1,3,5,7–四己烯基环四硅氧烷或苯并三唑作为任选的组分掺入本发明的组合物中。在该组合物中反应抑制剂含量没有特别限制,但相对于100总质量份的上述组分(A)至(D)优选在0.0001至5质量份的范围内。
该组合物也可包含荧光物质作为任选的组分。该荧光物质的例子有广泛用于发光二极管(LED)中的物质,诸如发黄光、红光、绿光和蓝光的荧光物质,诸如氧化物荧光物质、氮氧化物荧光物质、氮化物荧光物质、硫化物荧光物质、硫氧化物荧光物质等。氧化物荧光物质的例子包括含铈离子的钇、铝和石榴石型YAG发绿光至黄光的荧光物质;含铈离子的铽、铝和石榴石型TAG发黄光的荧光物质;以及含铈或铕离子的硅酸盐发绿光至黄光的荧光物质。氮氧化物荧光物质的例子包括含铕离子的硅、铝、氧和氮型SiAlON发红光至绿光的荧光物质。氮化物荧光物质的例子包括含铕离子的钙、锶、铝、硅和氮型CASN发红光的荧光物质。硫化物荧光物质的例子包括含铜离子或铝离子的ZnS发绿光的荧光物质。硫氧化物荧光物质的例子包括含铕离子的Y2O2S发红光的荧光物质。这些荧光物质可用作单一类型或两种或更多种类型的混合物。该组合物中的荧光物质的含量没有特别限制,但在该组合物中优选地在0.1至70质量%范围内、并且更优选地在1至20质量%范围内。
此外,可将无机填充剂诸如二氧化硅、玻璃、氧化铝、氧化锌等;聚甲基丙烯酸酯树脂等的有机树脂细粉;耐热剂、染料、颜料、阻燃剂、溶剂等作为任选的组分以不损害本发明目标的水平掺入本发明的组合物中。
本发明的组合物使得在室温或加热下发生固化,但优选的是,对组合物加热以实现快速固化。加热温度优选地为50至200℃。
现在将详细描述本发明的固化产物。
本发明的固化产物通过固化上述可固化有机硅组合物而形成。固化产物的形状没有特别限制,并且例子包括薄片形状和膜形状。固化产物可作为简单物质处理,或者也可以其中固化产物覆盖或密封光学半导体元件等的状态处理。
现在将详细阐述本发明的光学半导体器件。
本发明的光学半导体器件通过用上述可固化有机硅组合物的固化产物密封光学半导体元件生产。本发明的此类光学半导体器件的例子包括发光二极管(LED)、光电耦合器和CCD。光学半导体元件的例子包括发光二极管(LED)芯片和固态图像感测器件。
图1示出了作为本发明的光学半导体器件的一个例子的单个表面安装型LED的横截面图。在图1所示的LED中,LED芯片1被贴片于引线框2上,并且该LED芯片1和引线框3由接合线4线接合。在该LED芯片1周围提供框材料5,并且框材料5内的LED芯片1由本发明的可固化有机硅组合物的固化产物6密封。
生产图1所示的表面安装型LED的方法的例子为以下方法:将LED芯片1贴片于引线框2上,使用金接合线4将LED芯片1和引线框3线接合,使用本发明的可固化有机硅组合物填充在LED芯片1周围提供的框材料5的内侧,并随后通过在50至200℃下加热来固化组合物。
实例
将在下文中用实践例对本发明的可固化有机硅组合物、其固化产物以及光学半导体器件进行详细描述。粘度是在25℃下的值。可固化有机硅组合物、其固化产物以及光学半导体器件的特性如下测量。
[固化性评价]
可固化有机硅组合物的固化速率基于以下来评价:使用差示扫描量热仪(DSC7000;由SII纳米科技公司(SII Nanotechnology Inc.)制造)在10℃/min的加热速率下测量的热生成峰值温度(℃),以及使用硫化仪(curastometer)(RHEOMETER MDR2000;由阿尔法科技有限公司(Alpha Technologies)制造)在150℃的测量温度和1°的模具偏转角下测量时扭矩值达到1dNm所需的时间(秒)。
[固化产物的水蒸汽渗透率]
通过使用压制机将可固化有机硅组合物在150℃下固化2小时制备厚度为1mm的固化膜。在具有40℃的温度和90%相对湿度的条件下根据JIS Z0208的杯法测量固化膜的水蒸汽渗透率。
[光学半导体器件的可靠性]
通过将可固化有机硅组合物在150℃下固化2小时生产图1所示的光学半导体器件。在具有50℃的温度、75%相对湿度和20ppm的硫化氢气体浓度的条件下使该光学半导体器件经受24小时暴露测试。通过测量在暴露测试前后光学半导体器件的发光效率的变化来评价光学半导体器件的可靠性。
[合成实例1]
首先,将400g(2.02mol)的苯基三甲氧基硅烷和93.5g(0.30mol)的1,3-二乙烯基-1,3-二苯基二甲基二硅氧烷装入反应容器中并预先混合。接下来,加入1.74g(11.6mmol)的三氟甲烷硫酸并加入110g(6.1mol)的水并且在搅拌的同时热回流2小时。随后通过加热在大气压力下蒸馏混合物直至混合物达到85℃。接下来,加入89g的甲苯和1.18g(21.1mmol)的氢氧化钾,并且在通过加热在大气压力下蒸馏混合物直至反应温度达到120℃之后,使混合物在该温度下反应6小时。将混合物冷却至室温,并且通过加入0.68g(11.4mmol)的乙酸进行中和反应。通过过滤去除所生成的盐。通过在真空下加热从所得透明溶液中去除低沸点物质,以获得347g(98%收率)的无色透明胶状粘滞液体。
作为核磁共振光谱的结果,观察到该液体为由以下平均单元式表示的有机聚硅氧烷:
[(CH3)(C6H5)CH2=CHSiO1/2]0.23(C6H5SiO3/2)0.77。
该有机聚硅氧烷的质量平均分子量(Mw)为1,617,并且分散度(Mw/Mn)为1.16。
[实践例1]
通过混合以下物质制备粘度为8,300mPa·s的可固化有机硅组合物:77.9质量份的在合成实例1中制备的有机聚硅氧烷,21.9质量份的由以下式表示的有机三硅氧烷:
H(CH3)2SiO(C6H5)2SiOSi(CH3)2H
(其量使得该组分中硅键合的氢原子的量对应于上述有机聚硅氧烷中每1摩尔的乙烯基基团为1摩尔),以及0.2质量份的铂-1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷络合物(包含0.1质量%的铂)的1,3,5,7-四甲基-1,3,5,7-四乙烯基环四硅氧烷溶液。
该可固化有机硅化合物达到1dNm的扭矩值所需的时间为36秒,并且DSC热生成峰值温度为122℃。固化产物的水蒸汽渗透率为6.7g/m2·24h。
[实践例2]
通过混合以下物质制备粘度为4,300mPa·s的可固化有机硅组合物:64.7质量份的在合成实例1中制备的有机聚硅氧烷,15.2质量份的粘度为3,000mPa·s的在两个分子末端处均被二甲基乙烯基甲硅烷氧基基团封端的甲基苯基聚硅氧烷,20.0质量份的由以下式表示的有机三硅氧烷:
H(CH3)2SiO(C6H5)2SiOSi(CH3)2H
(其量使得该组分中硅键合的氢原子的量对应于上述有机聚硅氧烷和甲基苯基聚硅氧烷中每1摩尔的乙烯基基团为1摩尔),以及0.2质量份的铂-1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷络合物(包含0.1质量%的铂)的1,3,5,7-四甲基-1,3,5,7-四乙烯基环四硅氧烷溶液。
该可固化有机硅化合物达到1dNm的扭矩值所需的时间为44秒,并且DSC热生成峰值温度为120℃。固化产物的水蒸汽渗透率为7.8g/m2·24h。
[实践例3]
通过混合以下物质制备粘度为11,500mPa·s的可固化有机硅组合物:76.3质量份的在合成实例1中制备的有机聚硅氧烷,20.0质量份的由以下式表示的有机三硅氧烷:
H(CH3)2SiO(C6H5)2SiOSi(CH3)2H
(其量使得该组分中硅键合的氢原子的量对应于上述有机聚硅氧烷中每1摩尔的乙烯基基团为0.9摩尔),3.5质量份的由以下平均式表示的有机聚硅氧烷:
H(CH3)2SiO(C6H5)2.5SiOSi(CH3)2H
(其量使得该组分中硅键合氢原子的量对应于上述有机聚硅氧烷中每1摩尔的乙烯基基团为0.1摩尔),以及0.2质量份的铂-1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷络合物(包含0.1质量%的铂)的1,3,5,7-四甲基-1,3,5,7-四乙烯基环四硅氧烷溶液。
该可固化有机硅化合物达到1dNm的扭矩值所需的时间为56秒,并且DSC热生成峰值温度为122℃。固化产物的水蒸汽渗透率为6.5g/m2·24h。
[实践例4]
通过混合以下物质制备粘度为10,600mPa·s的可固化有机硅组合物:77.8质量份的在合成实例1中制备的有机聚硅氧烷,18.7质量份的由以下式表示的有机聚硅氧烷:
H(CH3)2SiO(C6H5)2SiOSi(CH3)2H
(其量使得该组分中硅键合的氢原子的量对应于上述有机聚硅氧烷中每1摩尔的乙烯基基团为0.72摩尔),3.3质量份的由以下平均单元式表示的有机三硅氧烷:
(C6H5SiO3/2)0.4[(CH3)2HSiO1/2]0.6
(其量使得该组分中硅键合氢原子的量对应于上述有机聚硅氧烷中每1摩尔的乙烯基基团为0.28摩尔),以及0.2质量份的铂-1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷络合物(包含0.1质量%的铂)的1,3,5,7-四甲基-1,3,5,7-四乙烯基环四硅氧烷溶液。
该可固化有机硅化合物达到1dNm的扭矩值所需的时间为16秒,并且DSC热生成峰值温度为110℃。固化产物的水蒸汽渗透率为6.6g/m2·24h。
[比较例1]
通过混合以下物质制备粘度为28,500mPa·s的可固化有机硅组合物:65.2质量份的在合成实例1中制备的有机聚硅氧烷,34.8质量份的由以下平均式表示的有机聚硅氧烷:
H(CH3)2SiO(C6H5)2.5SiOSi(CH3)2H
(其量使得该组分中硅键合的氢原子的量对应于上述有机聚硅氧烷中每1摩尔的乙烯基基团为1摩尔),以及0.2质量份的铂-1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷络合物(包含0.1质量%的铂)的1,3,5,7-四甲基-1,3,5,7-四乙烯基环四硅氧烷溶液。
该可固化有机硅化合物达到1dNm的扭矩值所需的时间为166秒,并且DSC热生成峰值温度为133℃。固化产物的水蒸汽渗透率为6.3g/m2·24h。
[比较例2]
通过混合以下物质制备粘度为12,300mPa·s的可固化有机硅组合物:53.6质量份的在合成实例1中制备的有机聚硅氧烷,15.2质量份的粘度为3,000mPa·s的在两个分子末端处均被二甲基乙烯基甲硅烷氧基基团封端的甲基苯基聚硅氧烷,31.2质量份的由以下平均式表示的有机聚硅氧烷:
H(CH3)2SiO(C6H5)2.5SiOSi(CH3)2H
(其量使得该组分中硅键合的氢原子的量对应于上述有机聚硅氧烷和甲基苯基聚硅氧烷中每1摩尔的乙烯基基团为1摩尔),以及0.2质量份的铂-1,3-二乙烯基-1,1,3,3-四甲基二硅氧烷络合物(包含0.1质量%的铂)的1,3,5,7-四甲基-1,3,5,7-四乙烯基环四硅氧烷溶液。
该可固化有机硅化合物达到1dNm的扭矩值所需的时间为211秒,并且DSC热生成峰值温度为130℃。固化产物的水蒸汽渗透率为7.4g/m2·24h。
作为实践例1和比较例1的比较以及实践例2和比较例2的比较的结果,观察到当由以下式
H(CH3)2SiO(C6H5)2SiOSi(CH3)2H
表示的有机三硅氧烷用作交联剂时,可固化有机硅组合物的粘度降低,并且固化速率增加。
[实践例5]
使用在实践例1中制备的可固化有机硅组合物产生光学半导体器件。当评价该光学半导体器件的可靠性时,在暴露测试前后未观察到光学半导体器件的发光效率的任何变化。
工业适用性
本发明的可固化有机硅组合物可用作电气/电子应用的粘合剂、灌封剂、保护剂、涂覆剂或底填料剂。具体地讲,可固化有机硅组合物具有优异的可操作性和高反应性并且可形成具有低透气性的固化产物,使得组合物适于用作光学半导体器件中的光学半导体元件诸如发光二极管(LED)的密封剂或保护涂料。
符号描述
1 光学半导体元件
2 引线框
3 引线框
4 接合线
5 框材料
6 可固化有机硅组合物的固化产物
Claims (4)
1.一种可固化有机硅组合物,包含:
(A)在分子中具有至少两个烯基基团并由以下平均单元式表示的有机聚硅氧烷:
(R1R2R3SiO1/2)a(R4 2SiO2/2)b(R2SiO3/2)c
其中,R1为具有1至12个碳的烷基基团;R2为相同或不同的具有6至20个碳的芳基基团或具有7至20个碳的芳烷基基团;R3为具有2至12个碳的烯基基团;R4为相同或不同的具有1至12个碳的烷基基团、具有2至12个碳的烯基基团、或苯基基团;并且“a”、“b”和“c”分别为满足0.01≤a≤0.5、0≤b≤0.7、0.1≤c<0.9并且a+b+c=1的数值;
(B)以此组合物的0至70质量%的在分子中具有至少两个烯基基团并且不具有任何硅键合的氢原子的直链有机聚硅氧烷;
(C)以使得此组分中的硅键合的氢原子的量是0.1摩尔至5摩尔每1摩尔组分(A)和(B)中的总烯基基团的量的在分子中具有至少两个硅键合的氢原子的有机聚硅氧烷,并且此组分的至少80质量%包含由以下式表示的有机三硅氧烷:
H(CH3)2SiO(C6H5)2SiOSi(CH3)2H;
以及
(D)用于加速组合物的固化的有效量的硅氢加成反应催化剂。
2.根据权利要求1所述的可固化有机硅组合物,其中组分(A)中的R2为苯基基团或萘基基团。
3.一种通过使权利要求1或2中所述的可固化有机硅组合物固化而制备的固化产物。
4.一种光学半导体器件,其中光学半导体元件由权利要求1或2中所述的可固化有机硅组合物的固化产物密封。
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