CN104723208A - Chemical mechanical polishing method - Google Patents
Chemical mechanical polishing method Download PDFInfo
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- CN104723208A CN104723208A CN201310716928.5A CN201310716928A CN104723208A CN 104723208 A CN104723208 A CN 104723208A CN 201310716928 A CN201310716928 A CN 201310716928A CN 104723208 A CN104723208 A CN 104723208A
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- abrasive grains
- metal level
- polishing
- mechanical polishing
- grinding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a chemical mechanical polishing method. The method includes providing a semiconductor substrate provided with a metal layer to be polished, and executing chemical mechanical polishing on the metal layer through grinding slurry. The grinding slurry comprises grinding particles and oxidant, the applied pressure is larger than 10psi, and the grinding speed is larger than 150 rpm. By the aid of the chemical mechanical polishing method, the fine polishing surface quality can be acquired, and the high polishing rate can be acquired.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly, relate to a kind of method of chemically mechanical polishing.
Background technology
Along with the development of semiconductor technology, the reducing of device size, require more and more higher to the planarization on each layer of semiconductor devices (such as gate metal layer, metal interconnecting layer) surface.Wherein, cmp (CMP) is a kind of flattening method be commonly used in semiconductor fabrication, and in addition, chemically mechanical polishing can also be used for removing the film being deposited on wafer surface.The principle of chemically mechanical polishing comprises chemistry and the combination of mechanical effect, in material surface to be ground, generating certain layer, then mechanically this certain layer being removed because there is chemical reaction.
But, for different materials, the technological parameter (such as pressure, grinding rotating speed etc.) that chemically mechanical polishing adopts and ground slurry all different, and polishing effect is also different.Particularly along with the development of semiconductor technology, in the semiconductor devices being applied to noble metal, when needs carry out polishing to layer of precious metal, because the hardness of noble metal is high, good stability, being not easy the features such as oxidation, to make to carry out chemically mechanical polishing to noble metal very difficult.
Therefore, a kind of method proposing chemically mechanical polishing is needed, to solve problems of the prior art.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in detailed description of the invention part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The invention provides a kind of method of chemically mechanical polishing.Described method comprises: provide Semiconductor substrate, and described Semiconductor substrate is formed with polished metal level; And using ground slurry to perform chemically mechanical polishing to described metal level, wherein said ground slurry comprises abrasive grains and oxidant, and applied pressure is greater than 10psi, and grinding rotating speed is greater than 150rpm.
Preferably, described pressure is 10psi-15psi.
Preferably, described grinding revolves speed for 150rpm-500rpm.
Preferably, the Mohs' hardness of described abrasive grains is 5 ~ 8.
Preferably, described abrasive grains is Al
2o
3, CeO
2, ZrO
2, TiO
2, GeO
2in one or more.
Preferably, the mass percent of described abrasive grains is 1%-15%.
Preferably, the average particle size particle size of described abrasive grains is 100nm-300nm.
Preferably, described oxidant is one or more in bromate, bromite, hypobromite, chlorate, chlorite, hypochlorite, iodate, hypoiodite, periodate.
Preferably, the mass percent of described oxidant is 1%-15%.
Preferably, the material of described metal level is noble metal.
Preferably, the material of described metal level comprises one or more in Pt, Os, Ir, Ru, Rh and Pd.
According to cmp method of the present invention, choose reasonable pressure size, grinding rotating speed, and combined with oxidant by abrasive grains, obtain high polishing speed while the polished surface quality that can obtain.
Below in conjunction with accompanying drawing, describe advantages and features of the invention in detail.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.In the accompanying drawings,
Fig. 1 is the flow chart of the method for chemically mechanical polishing according to an embodiment of the invention;
Fig. 2 A-Fig. 2 B adopts the flow chart shown in Fig. 1 to make the sectional view of the device that each step obtains in semiconductor devices process; And
Fig. 3 is schematic diagram when adopting non-consolidation abrasive polishing pad to carry out polishing to polished metal level.
Detailed description of the invention
Next, by reference to the accompanying drawings the present invention will more intactly be described, shown in the drawings of embodiments of the invention.But the present invention can implement in different forms, and should not be interpreted as the embodiment that is confined to propose here.On the contrary, provide these embodiments will expose thoroughly with complete, and scope of the present invention is fully passed to those skilled in the art.In the accompanying drawings, in order to clear, the size in Ceng He district and relative size may be exaggerated.Same reference numerals represents identical element from start to finish.
Be understood that, when element or layer be called as " ... on ", " with ... adjacent ", " being connected to " or " being coupled to " other element or layer time, its can directly on other element or layer, with it adjacent, connect or be coupled to other elements or layer, or the element that can exist between two parties or layer.On the contrary, when element be called as " directly exist ... on ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other element or layer time, then there is not element between two parties or layer.
According to an aspect of the present invention, a kind of method of chemically mechanical polishing is provided.The method comprises:
Perform step S110: Semiconductor substrate is provided, this Semiconductor substrate is formed with polished metal level.
As shown in Figure 2 A, Semiconductor substrate 210 is provided.This Semiconductor substrate 210 can be at least one on silicon, silicon-on-insulator (SOI), insulator on stacked silicon (SSOI), insulator in stacked SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI).Can be formed with shallow trench isolation for isolating active area in Semiconductor substrate 210 from (STI) etc., shallow trench isolation is from being formed by silica, silicon nitride, silicon oxynitride, Fluorin doped glass and/or other existing dielectric materials.Certainly, dopant well (not shown) etc. can also be formed with in Semiconductor substrate 210.In order to illustrative simplicity, here only represent for square frame.Semiconductor substrate 210 can be formed with device (not shown), such as transistor etc.These devices can cause the surface of the polished metal level formed subsequently more uneven.
Semiconductor substrate 210 is formed with polished metal level 220 '.This metal level 220 ' can include but not limited to the gate metal layer that formed by other suitable methods such as physical vapour deposition (PVD), chemical vapour deposition (CVD), plating or metal interconnecting layer.The material of polished metal level 220 ' can be any suitable metal material, and exemplarily, according to one embodiment of present invention, the material of polished metal level 220 ' can be noble metal.Preferably, the material of polished metal level 210 ' can comprise in Pt, Os, Ir, Ru, Rh and Pd one or more.The metals such as Pt, Os, Ir, Ru, Rh, Pd have low resistance, can improve the performance of semiconductor devices.And the temperature-coefficient of electrical resistance of the metal such as Pt, Os, Ir, Ru, Rh, Pd is lower, resistance stability is good, thus can improve the stability of performance of semiconductor device.
Perform step S120: use ground slurry to perform chemically mechanical polishing to metal level, wherein ground slurry comprises abrasive grains and oxidant, and applied pressure is greater than 10psi, and grinding rotating speed is greater than 150rpm.
As shown in Figure 2 B, ground slurry is used to perform chemically mechanical polishing, to form the metal level after polishing 220 to polished metal level 220 '.The surface finish quality that metal level 220 wherein after polishing has had.Chemically mechanical polishing can be carried out on consolidation abrasive polishing pad, and now, ground slurry is fixed on polishing pad.Chemically mechanical polishing also can be carried out on non-consolidation abrasive polishing pad, and now, ground slurry can be graininess and be suspended in liquid carrier.Be described in detail for the chemically mechanical polishing of chemically mechanical polishing to polished metal level 220 ' carried out on non-consolidation abrasive polishing pad below.
As shown in Figure 3, chemical mechanical polishing apparatus 300 comprises polishing pad 310, grinding head 320, ground slurry transmitting device 330 and grinding head collating unit 340.During use, the Semiconductor substrate 210 with polished metal level 220 ' (see Fig. 2 A) is placed on the below of grinding head 320 above, and polished metal level 220 ' (see Fig. 2 A) is contacted with polishing pad 310.Ground slurry transmitting device 330 is arranged on the top of polishing pad 310, for ground slurry being sprayed onto the surface of polishing pad 310.Grinder pad finisher 340 comprises the arranging plate 342 arranging arm 341 and be arranged on arrangement wall 341 one end, wherein arranges arm 341 and arranging plate 342 can be driven to move on grinding pad 310, carry out finishing action to make the surface of arranging plate 342 to whole grinding pad 310.In addition; the surface of grinding pad 310 is also provided with groove 311; groove 311 not only can make ground slurry be uniformly distributed on grinding pad 310, and can also collect the particulate of ground slurry generation or drop on the particulate on grinding pad 310 by the external world in process of lapping.
Chemically mechanical polishing is the finishing method that chemical attack combines with mechanical grinding.In polishing process, chemical attack and mechanical grinding interact.On the one hand, friction generates heat mutually for abrasive grains in ground slurry (comprising abrasive grains and oxidant) and polished metal level 220 ', the heat condition that solid state reaction produces is provided, there is chemical reaction in the oxidant in ground slurry and polished metal level 220 ', Substance Transformation that is hardness is high, stable chemical nature is the transition soft layer that springy texture is easily removed.On the other hand, due to the relative motion between polished metal level 220 ' and polishing pad 310, abrasive grains produces ablation to the chemically reactive layer of polished metal level 220 ', conversion zone is removed, reaches the requirement of polishing.
In CMP process, grinding head 320 can apply pressure to the Semiconductor substrate 210 be positioned at therebetween and the polished metal level 220 ' be located thereon with polishing pad 310.For the material that the hardness such as noble metal are larger, this pressure can be greater than 10psi(Pounds per square inch, pound/square inch).Wherein, 1psi=6.895kPa=0.0689476bar=0.006895MPa.In general, increase pressure, mechanical ablation can be strengthened, improve polishing speed.But pressure is excessive, can affects being uniformly distributed of the ground slurry on polished metal level 220 ' surface, cause polishing uneven, polishing pad 310 also can rapid wear, and polishing area temperature is high, occurs that the probability of cut increases, thus reduces quality of finish.Preferably, this pressure is 10psi-15psi.When pressure is within the scope of this, higher polishing speed can be obtained, good quality of finish can be ensured again.
In CMP process, grinding head 320 rotates relative to polishing pad 310, to drive the polished metal level 220 ' in Semiconductor substrate 210 to rotate relative to polishing pad 310, thus reaches the effect of polishing.At this, the rotation speed of rotation of grinding head 320 is defined as grinding rotating speed.Its grinding rotating speed is greater than 150rpm.In general, grinding rotating speed is larger, and mechanical grinding effect is stronger, and polishing speed is also higher.But rotating speed is excessive can cause polishing pad 310 rapid wear equally, and polishing area temperature is high, occur that the probability of cut increases, thus reduce quality of finish.Preferably, grinding rotating speed is 150rpm-500rpm.When grinding rotating speed is within the scope of this, higher polishing speed can be obtained, good quality of finish can be ensured again.
Above-mentioned chemically mechanical polishing provided by the invention is specially adapted to the noble metal of such as Pt, Os, Ir, Ru, Rh and/or Pd.
When non-consolidation abrasive polishing pad carries out chemically mechanical polishing to metal level 220 ', ground slurry can comprise abrasive grains and oxidant.Abrasive grains and oxidant are that graininess is suspended in liquid carrier.Liquid carrier can be used for promoting abrasive grains, oxidant is sprayed onto on the surface of polishing pad 110, and then carries out chemically mechanical polishing to polished metal level 220 '.Liquid carrier can be any suitable medium, such as, water (can be more preferably deionized water), water and other can the mixed solution that formed of the solvent miscible with water.
Abrasive grains acts on polished metal level 220 ' mainly through modes such as micro-cutting, micro-scratching, roll extrusion in polishing process, removes surfacing.The hardness of abrasive grains, particle diameter, the combined factors such as shape and the mass concentration in ground slurry thereof determine the polishing ability of abrasive grains.
The hardness (can weigh by Mohs' hardness) of abrasive grains is to the surperficial important of the metal level 220 formed after polished metal level 220 ' chemically mechanical polishing.In general, when the hardness of abrasive grains is too large, under polish pressure effect, is easy to cause abrasive grains to embed the surface of the metal level 220 after final polishing, and in remained on surface cut, abrasion hole etc., affects surface quality.And the hardness of abrasive grains is too little, be not enough to again the surfacing removing polished metal level 220 ', or the speed removed is extremely low.Therefore, the selection of abrasive grains should depend on the concrete property of polished metal level 220 '.According to one embodiment of present invention, preferably, the Mohs' hardness of the abrasive grains of selection can be 5 ~ 8.More preferably, abrasive grains can be metal oxide, such as Al
2o
3, CeO
2, ZrO
2, TiO
2, GeO
2in one or more.Abrasive grains selects the material of Mohs' hardness in above-mentioned scope, and cut, the abrasion hole on the surface of the metal level 220 after not only can making polishing are few, can also have larger polishing speed.
The particle size of abrasive grains also can affect the degree of depth that abrasive grains embeds polished surface.In general, in polishing process, the abrasive grains active force that particle size is large is large, and mechanical removal effect is comparatively strong, and polishing efficiency is higher.But the abrasive grains that particle size is larger also produces the even residual crackle of larger residual cut in easier metal level 220 surface after final polishing.Otherwise the abrasive grains that particle size is less can obtain good polished surface quality, but its polishing efficiency is low.Therefore, the average particle size particle size of abrasive grains should depend on the concrete property of polished metal level 220 '.Particularly, according to one embodiment of present invention, preferably, the average particle size particle size (such as average particulate diameter) of abrasive grains can be 100nm-300nm.Wherein, the average particle size particle size of abrasive grains can be passed through light scattering (such as, practical Hariba LA-910 instrument) and measures.Applicant finds, when the average grain size of abrasive grains is within the scope of this, can obtains good polished surface quality, and have higher polishing efficiency.
When abrasive grains is suspended in liquid carrier, the mass percent of abrasive grains can be 1%-15%.Such as, the mass percent of abrasive grains can be 1%, 3%, 10% or 15%.
In CMP process, in order to the weak oxide-film of one deck adhesion can be formed at polished surface quickly, be conducive to follow-up machinery and remove, usually can add oxidant in ground slurry.Under the oxide etch of oxidant and the grinding acting in conjunction of abrasive grains, the metal level 220 after final polishing can reach high-quality global planarizartion effect.
Different oxidants is different to the oxidation effectiveness of polished metal level 220 '.According to one embodiment of present invention, preferably, oxidant is one or more in bromate, bromite, hypobromite, chlorate, chlorite, hypochlorite, iodate, hypoiodite, periodate.
The concentration of oxidant also can have an impact to polishing effect.Such as, along with the increase of oxidant concentration, oxide thickness becomes large, and material remove rate but reduces, and the thickness of oxide-film also can produce certain influence to the surface quality after polishing.Preferably, the mass percent of oxidant is 1%-15%.
In sum, according to cmp method of the present invention, choose reasonable pressure size, grinding rotating speed, and combined with oxidant by abrasive grains, obtain high polishing speed while the polished surface quality that can obtain.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (11)
1. a method for chemically mechanical polishing, is characterized in that, described method comprises:
Semiconductor substrate is provided, described Semiconductor substrate is formed with polished metal level; And
Use ground slurry to perform chemically mechanical polishing to described metal level, wherein said ground slurry comprises abrasive grains and oxidant, and applied pressure is greater than 10psi, and grinding rotating speed is greater than 150rpm.
2. the method for claim 1, is characterized in that, described pressure is 10psi-15psi.
3. the method for claim 1, is characterized in that, described grinding revolves speed for 150rpm-500rpm.
4. the method for claim 1, is characterized in that, the Mohs' hardness of described abrasive grains is 5 ~ 8.
5. method as claimed in claim 4, it is characterized in that, described abrasive grains is Al
2o
3, CeO
2, ZrO
2, TiO
2, GeO
2in one or more.
6. method as claimed in claim 5, it is characterized in that, the mass percent of described abrasive grains is 1%-15%.
7. method as claimed in claim 5, it is characterized in that, the average particle size particle size of described abrasive grains is 100nm-300nm.
8. the method for claim 1, is characterized in that, described oxidant is one or more in bromate, bromite, hypobromite, chlorate, chlorite, hypochlorite, iodate, hypoiodite, periodate.
9. method as claimed in claim 8, it is characterized in that, the mass percent of described oxidant is 1%-15%.
10. the method for claim 1, is characterized in that, the material of described metal level is noble metal.
11. methods as claimed in claim 10, is characterized in that, the material of described metal level comprise in Pt, Os, Ir, Ru, Rh and Pd one or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310716928.5A CN104723208A (en) | 2013-12-20 | 2013-12-20 | Chemical mechanical polishing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310716928.5A CN104723208A (en) | 2013-12-20 | 2013-12-20 | Chemical mechanical polishing method |
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| CN104723208A true CN104723208A (en) | 2015-06-24 |
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| CN201310716928.5A Pending CN104723208A (en) | 2013-12-20 | 2013-12-20 | Chemical mechanical polishing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364430A (en) * | 2019-07-29 | 2019-10-22 | 武汉新芯集成电路制造有限公司 | A kind of thining method and crystal circle structure of wafer |
| CN111020592A (en) * | 2019-11-18 | 2020-04-17 | 河北工业大学 | Polishing solution for improving polishing removal rate of ruthenium interconnection line of integrated circuit and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060086056A1 (en) * | 2004-10-26 | 2006-04-27 | Sang-Ick Lee | Aqueous slurry composition for chemical mechanical planarization |
| CN101356628A (en) * | 2005-08-05 | 2009-01-28 | 高级技术材料公司 | High throughput chemical mechanical polishing composition for metal film planarization |
| CN101961852A (en) * | 2009-07-24 | 2011-02-02 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method for interlayer dielectric layer |
| CN102011106A (en) * | 2010-09-07 | 2011-04-13 | 天津理工大学 | Method for flattening diamond film by using composite process |
| US20120070991A1 (en) * | 2009-04-13 | 2012-03-22 | University Of Florida Research Foundation Inc. | Chemical mechanical polishing of silicon carbide comprising surfaces |
-
2013
- 2013-12-20 CN CN201310716928.5A patent/CN104723208A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060086056A1 (en) * | 2004-10-26 | 2006-04-27 | Sang-Ick Lee | Aqueous slurry composition for chemical mechanical planarization |
| CN101356628A (en) * | 2005-08-05 | 2009-01-28 | 高级技术材料公司 | High throughput chemical mechanical polishing composition for metal film planarization |
| US20120070991A1 (en) * | 2009-04-13 | 2012-03-22 | University Of Florida Research Foundation Inc. | Chemical mechanical polishing of silicon carbide comprising surfaces |
| CN101961852A (en) * | 2009-07-24 | 2011-02-02 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method for interlayer dielectric layer |
| CN102011106A (en) * | 2010-09-07 | 2011-04-13 | 天津理工大学 | Method for flattening diamond film by using composite process |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364430A (en) * | 2019-07-29 | 2019-10-22 | 武汉新芯集成电路制造有限公司 | A kind of thining method and crystal circle structure of wafer |
| CN111020592A (en) * | 2019-11-18 | 2020-04-17 | 河北工业大学 | Polishing solution for improving polishing removal rate of ruthenium interconnection line of integrated circuit and preparation method thereof |
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