CN104538415B - Optical fiber array for imaging sensor - Google Patents
Optical fiber array for imaging sensor Download PDFInfo
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- CN104538415B CN104538415B CN201410710878.4A CN201410710878A CN104538415B CN 104538415 B CN104538415 B CN 104538415B CN 201410710878 A CN201410710878 A CN 201410710878A CN 104538415 B CN104538415 B CN 104538415B
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Abstract
Disclose the optical fiber array for imaging sensor.A kind of device of the colored filter on photoelectric conversion element array in the image sensor is provided, it is included：A pair of adjacent colored filters, it is on a pair of photoelectric conversion units；Wherein, the pair of adjacent colored filter clamps air gap and the support membrane under the air gap, the opposing sidewalls of the colored filter are not straight and vertical, wherein, the nipped support membrane is wider to hold the pair of adjacent colored filter than in a lower in a higher position.
Description
The application is application number 200980160236.9, the division Shen of the same title on 2 days July 2009 applying date invention
Please.
Technical field
Main contents of the present invention relate generally to the structure and method for manufacturing solid state image sensor.
Background technology
Photographic equipment（Such as digital camera and digital video camera-recorder）Electronic image sensor can be contained, they can catch and take light
To be processed into static or video image.Electronic image sensor, which usually contains millions of individual light, to be caught and takes component, such as optical diode.
Solid state image sensor can be charge coupled device（CCD）Type or complementary metal oxide semiconductor（CMOS）Type.
In any type of imaging sensor, optical sensor can be formed in the substrate and arranged with two-dimensional array.Imaging sensor
Millions of individual pixels are usually contained, to provide high-definition picture.
Shown in Figure 1A is the profile of prior art solid state image sensor 1, is shown in figure in CMOS-type sensor
Multiple adjacent pixels, it is exposed in United States Patent (USP) case 7,119,319.Each pixel has a photoelectric conversion unit 2.It is each
Individual converting unit 2 is located at the adjacent place of transmission electrode 3, and electric charge can be transferred to floating diffusion unit by it（Do not show）.The structure bag
Containing a plurality of electric wire 4 being embedded in insulating barrier 5.The sensor generally comprises the planarization layer 6 positioned at the lower section of colored filter 8,
To compensate the top surface out-of-flatness caused by the isoelectric line 4, because flat surfaces carve the Conventional color to carry out to excuse me
It is quite important for optical filter constituted mode.Second planarization layer 10 is arranged on the top of colored filter 8, flat to provide
Smooth surface forms lenticule 9.Planarization layer 6 and 10 is about 2.0um plus the gross thickness of colored filter 8.
Light guide 7 is integrated into the sensor, to direct light in such converting unit 2.Such light guide 7 is by reflecting
Rate is formed higher than the material of the silicon nitride of insulating barrier 5.Each light guide 7 is respectively provided with also wider than the region on such side of converting unit 2
Entrance.Sensor 1 can also have colored filter 8 and lenticule 9.
Lenticule 9 is focused light on photoelectric conversion unit 2.As shown in fig. 1b, it is micro- due to the relation of optical diffraction
Mirror 9 can cause diffraction light, be transmitted to neighbouring photoelectric conversion unit 2 and produce optical crosstalk（crosstalk）With light loss.When
When having planarization layer above or below colored filter, the lenticule can be allowed to be positioned at further away from the light guide, the number of crosstalk
Amount will increase.By passing through planarization layer（Above or below colored filter）Or the side wall of colored filter, light can go here and there
Disturb in neighbouring pixel.Metallic shield can be sometimes integrated into such pixel, to stop Crosstalk.It is in addition, micro-
Alignment error between mirror, colored filter and light guide will also result in crosstalk.Although can change the formation of lenticule, size,
And shape is to reduce crosstalk.But, it must increase the extra cost of accurate lenticule formation process, and crosstalk but can not still disappear
Remove.
The retroeflection of imaging sensor at substrate interface is another problem for causing light-receiving to lose.Such as figure
Shown in 1A, light guide can directly contact with silicon.This interface is likely to result in the non-desired retroeflection away from the sensor.
Conventional anti-reflection structure for imaging sensor is inserted directly into oxide above the silicon substrate and adds nitride bi-layer film
Stack（oxide-plus-nitride dual-layer film stack）Or the nitrogen oxides with different ratio of nitrogen to oxygen
Layer, but be only capable of reducing the reflection between the silicon substrate and high oxide insulator.When the interface is silicon substrate and nitridation object light
When leading, this mode does not just apply to.
The content of the invention
A kind of image sensor pixel, it is located at the substrate comprising one by the photoelectric conversion unit of a substrate supports and one
Neighbouring insulator.The pixel can have a tandem light guide, and a wherein part for the tandem light guide is located in the insulator,
And another part just extends on the body.The tandem light guide can include an automatic alignment colored filter, and it is adjacent
There is air gap between colored filter.Can be by transparent sealing film from upper seal air gap.The transparent sealing film can have
Concave surface above air gap so that light diverging away from air gap Er Jin enters adjacent color optical filter.The pixel can be in the substrate with being somebody's turn to do
There is primary antibody reflective stack between tandem light guide.
Brief description of the drawings
Figure 1A is the schematic diagram of two image sensor pixels of display prior art；
Figure 1B is the schematic diagram of the optical crosstalk between the adjacent pixel of display prior art；
Fig. 2 is the schematic diagram of two pixels of display one embodiment of the invention；
Fig. 3 A are the schematic diagram for the light that display is advanced along the gap between two colored filters；
Fig. 3 B are re-directed to the schematic diagram in such colored filter for display from the gap location by light；
Fig. 3 C are graph of a relation of the luminous power relative to the distance in the gap；
Fig. 3 D be three kinds of different colours light in gap depth be 0.6um relative with the gap power loss at 1.0um
In the graph of a relation of gap width；
Fig. 3 E are maximal clearance power loss relative to the graph of a relation that depth is gap width at 1.0um；
Fig. 3 F are the maximal clearance power loss table that depth is the different gap width at 1.0um；
Fig. 3 G are the table that different gap width and the interval area of different pixels pitch are represented with elemental area percentage
Lattice；
Fig. 3 H are different gap width and the form of the pixel power loss of different pixels pitch；
Fig. 3 I are the pixel power loss of different gap width relative to the graph of a relation of pixel pitch；
Fig. 4 A to L are to show to manufacture the schematic diagram of the process of the pixel shown in Fig. 2；
Fig. 5 is the schematic diagram of the ray path in display Fig. 2 pixel；
Fig. 6 A are the schematic diagram of the pixel for the corner for showing the array；
Fig. 6 B are the schematic diagram of the opticpath in display Fig. 6 A pixel；
Fig. 7 is the schematic top plan view of four pixels in array of display；
Fig. 8 is an alternate embodiment of sensor pixel, has ray path in figure；
Fig. 9 A to M are to show to manufacture the schematic diagram of the process of the pixel shown in Fig. 8；
Figure 10 A to H are to show to expose the schematic diagram of the process of pad；
Figure 11 is the schematic diagram that the antireflection in an embodiment of display sensor stacks；
Figure 12 A to E are to show to form showing for the alternative Process of antireflection stacking in an embodiment of the sensor
It is intended to；
Figure 13 A are the transmission coefficient of antireflection stacking relative to the graph of a relation of optical wavelength；
Figure 13 B are the transmission coefficient of antireflection stacking relative to the graph of a relation of optical wavelength；
Figure 13 C are the transmission coefficient of antireflection stacking relative to the graph of a relation of optical wavelength；
Figure 14 A to G are to form showing for the alternative Process of two antireflections stackings in an embodiment of the sensor
It is intended to；
Figure 15 A are the transmission coefficient of the first antireflection stacking on Figure 14 G lefthand portions relative to the relation of optical wavelength
Figure；
Figure 15 B are the transmission coefficient of the second antireflection stacking on Figure 14 G right hand parts relative to the relation of optical wavelength
Figure；
The alternate embodiment of one of Figure 16 displayings this paper invention image sensor of person；
The alternate embodiment of one of Figure 17 displayings this paper invention image sensor of person；
The alternate embodiment of one of Figure 18 displayings this paper invention image sensor of person；
The alternate embodiment of one of Figure 19 displayings this paper invention image sensor of person；
Figure 20 is to show to manufacture the processing procedure Bu Sudden of the pixel shown in Figure 18 diagram；
The alternate embodiment of one of Figure 21 displayings this paper invention image sensor of person；
Figure 21 A to 21D are to show to manufacture the processing procedure Bu Sudden of the pixel shown in Figure 19 diagram；
The alternate embodiment of one of Figure 22 displayings this paper invention image sensor of person；
Figure 23 is to cover glass certainly in image sensor package of the displaying according to the embodiment of one of this paper invention person
Li Transverse are worn to the diagram of the ray tracing of light guide；
Figure 24 is diagram of the displaying according to the encapsulation configuration of one of this paper invention person.
Embodiment
A kind of image sensor pixel disclosed herein, it includes one by the photoelectric conversion unit of a substrate supports and one
In the insulator of the substrate proximity.What the pixel included one in an opening of the insulator and just extended on the body
Light guide a so that part for the light guide has an Air Interface.The Air Interface improves the internal reflection of the light guide.In addition,
Technique for the construction light guide and an adjacent color optical filter can optimize the upper aperture of the light guide and reduce crosstalk.The light guide
Preceding feature need not use lenticule.In addition, in the lower section construction one of the top of the photoelectric conversion unit and the light guide
Antireflection stacks, to reduce via from light loss caused by the retroeflection of the imaging sensor.Can be by correcting the anti-reflective
The thickness for the tunic penetrated in stacking for antireflection to optimize the pixels of two different colours individually.
The pixel can include two light guides, and one of which is located above another one.First light guide is located at the substrate proximity
Insulator first opening in.Second light guide is located in the second opening of a support membrane, and the support membrane is finally in the pixel
It can be removed during manufacture or part removes.One colored filter may be disposed in identical opening and thus can be aligned automatically
Second light guide.Second light guide can deviate first light guide in the outer corner of the pel array, so as to catch take with relative to
Vertical axis is the incident light of non-zero angle.
Between adjacent color optical filter, a gap produces by the support membrane material for removing the optical filter adjacent place.
The refractive index of air is less than the support membrane and can strengthen the colored filter and the internal reflection in the light guide.In addition, the gap
Be configured to by the light being incident on the gap " bending " into the colored filter and improve be provided to the sensing
The quantity of the light of device.
Silicon-the light guide（silicon-light-guide）The reflection of interface is with the first light guide nitridation formed below
Thing film reduces with the first oxidation film.Second oxidation film can be additionally inserted in below the nitride film, had to broadening
Imitate the light frequency range of antireflection.First oxide can be deposited over the groove etched before the light-guide material is applied
In.In alternative embodiments, all anti-reflective films are formed before etched recesses, and extra light guide etch stop film then can
Such anti-reflective film is covered, to protect them, in order to avoid destroyed by the groove etching agent.
With reference to schema, especially Fig. 2,4A to L, 5 and 6A to B, that shown in figure is two in imaging sensor 100
The embodiment of adjacent pixel.Each pixel includes a photoelectric conversion unit 102, and light energy can be converted into electric charge by it.Normal
In the 4T pixels of rule, electrode 104 can be transmission electrode, such electric charge to be transferred to the sense node of separation（Do not show）.
Or in the 3T pixels of routine, electrode 104 can be reset electrode, to reset the photoelectric conversion unit 102.Such electrode
104 form on substrate 106 with converting unit 102.Sensor 100 is also comprising the electric wire 108 being embedded in insulating barrier 110.
Each pixel is respectively provided with one first light guide 116.First light guide 116 is the refraction for being higher than insulating barrier 110 by refractive index
Material is formed.As shown in Figure 4 B, every one first light guide 116 can have the side wall 118 relative to vertical axis angle [alpha].Angle
Degree α is chosen as being less than 90-asin（ninsulating layer / nlight guide）, preferably 0 so that had in the light guide completely
Internal reflection, wherein, ninsulating layerWith nlight guideThe respectively refractive index of insulating layer material and light-guide material.Light guide 116
Light internally can be reflexed into converting unit 102 from the second light guide 130.
Second light guide 130 is located at the top of the first light guide 116 and can be by being made with the identical material of the first light guide 116.The
The top of two light guides 130 is wider than the bottom of second light guide 130 and the joint of the first light guide 116.Therefore, in the bottom end,
Gap between the adjacent grade of the second light guide 130（Hereinafter referred to as " the second gap "）More than the gap of top end, and can be more than
Gap 422 between colored filter 114B, 114G of the top of second light guide 130.Such second light guide 130 can lateral run-out
One light guide 116 and/or converting unit 102, as shown in FIG, wherein, the center line C2 of the second light guide 130 deviates the first light guide
The 116 or center line C1 of photoelectric conversion unit 102.The deviation can change according to the location of pixels in array.For example, it is located at
The deviation of pixel at the outside of the array may be bigger.The deviation can be with incident light identical horizontal direction, with excellent
Change the reception of first light guide.To for the incident light that non-zero angle arrives at, to deviate the second light guide 130 relative to vertical axis
More light can be allowed to be delivered to the first light guide 116.In actual effect, the second light guide 130 can be collectively formed in different pictures from the first light guide 116
There is the light guide of different vertical section shape at element.The shape can be optimised according to the angle of incident light at each pixel.
Shown in Fig. 5 and 6B is the ray of the pixel of the corner for the center and array for following the trail of array respectively.In Fig. 5
In, incident ray vertically into.Second light guide 130 put at the first light guide 116.Light a and b can be in the second light guide 130
Reflection once, can then enter the first light guide 116, reflection is once（Ray a）Or twice（Ray b）, and can then enter conversion
Unit 102.In fig. 6b, the second light guide 130 is offset to the right, the center away from the array（It is on the left side）.With relative to vertical
D-axis, which is up to light c of 25 degree of the angle from the left side, to be reflected in the right side wall of the second light guide 130, irradiate and pass through its lower-left
Square side wall, into the first light guide 116, and it can finally arrive at converting unit 102.The deviation can allow first light guide 116 to be caught again
Take the light for leaving the lower left side wall of the second light guide 130.Whenever crossing over light guide side wall, no matter leaving the second light guide or into the
One light guide, reflecting each time for light c can allow refracted rays to become smaller relative to the angle of the vertical axis, strengthen towards the light
The conducting effect of electric converting unit.Therefore, to establish light guide the light guide can be allowed using the first light guide 116 and the second light guide 130
Vertical-sectional shape changes with pixel, to optimize the effect for transferring light to photoelectric conversion unit 102.
Using two single light guides 116,130 come to establish the Section 2 advantage of light guide be to reduce each light guide 116,130
Etch depth.As a result, side wall oblique angle control just can reach higher accuracy.It can also allow light-guide material deposition less likely
Produce undesired keyhole（keyholes）, when such keyhole is frequently appeared in thin film deposition into deep recess, it can cause
Light can scatter when encountering such keyhole at the light guide.
Colored filter 114B, 114G are located at the top of the second light guide 130.At such colored filter（With it is neighbouring）'s
The up rightness of side wall upper section is more than the remainder of the second light guide.
The width in the first gap 422 between such colored filter is 0.45um or smaller, and depth is for 0.6um or more
Greatly.The light that gap with the limitation of above-mentioned size can allow in the gap is redirected into such colored filter and can finally arrived at
Sensor.The light loss percentage in the pixel is incided caused by the reason gap（Hereinafter referred to as " pixel loss "）Therefore can be big
The earth reduces.
The light being incident on the gap between two translucent areas of high index can turn when the gap is sufficiently narrow
To one of region or another region.Specifically, the light meeting on the gap being incident between two colored filters
Colored filter or another colored filter are redirect to when the gap width is sufficiently small.Shown in Fig. 3 A is two colorized optical filterings
Low refractive index dielectric is filled between panel region（For example, air）Down suction.Into the gap and relatively close to wherein
The incident ray of one side wall can be redirected into the side wall, and remaining incident light can then be redirected into another side wall.Shown in Fig. 3 B
Be the multiple wavefront for being separated by a wavelength.Pace of the wavefront in high index medium is slower, in this example, color
The refractive index n of colo(u)r filter is about 1.6.Therefore, in the gap（Assuming that it is filled with air）Separation distance between wavefront
For 1.6 times of the separation distance of the colored filter, so as to which interface of the wavefront between the colored filter and gap can be caused
Place bends and causes turn light rays to enter colored filter.Fig. 3 C are the conduction luminous power P along the vertical axis z in gap（z）
Divided by incident optical power P（0）Relative to distance z graph of a relation.As shown in Figure 3 C, luminous power can in different gap widths
Decline when going deep into the gap, it is faster in the small gap width decline to about wavelength or so, and to 0.4 times of wavelength or more
It is to tend to be substantially ignored in the depth of 1.5 times of wavelength for small gap width.From Fig. 3 C, depth is optimal
For wavelength interested（In the embodiment of this visible light image sensor, it is 650nm）At least 1 times of most elder.
This depth, it is incident on the gap and is lost in the luminous power percentage in space further below（Hereinafter referred to " gap loss "）
15% can be less than.Therefore, the thickness of colored filter need to be at least 1 times of the wavelength, to filter the incidence for entering the gap
Light, filtered light is avoided by light guide 130,116 and finally enters converting unit 102.If the gap is filled with air
Transparent medium in addition（Refractive index ngap>1.0）, then the necessary constriction in the gap can be speculated to 0.45um/ngapOr it is smaller, because with
Coverage on the basis of wavelength keeps identical but absolute distance then to reduce 1/ngap。
With reference to figure 3C, 650nm a length of to air medium wave feux rouges, and 0.6 times that width is air medium wavelength（Also
It is 0.39um）Gap for, at depth 0.65um（It is, 1.0 times of air medium wavelength）, gap power flow declines
Reduce to 0.15（15%）.Decay can reach maximum near 1um depth.Wavelength is shorter, can be steeper with the decay of depth
It is high and steep.
Shown in Fig. 3 D is three kinds of colors at depth 0.6um and 1.0um respectively（The blueness of 450nm wavelength, 550nm ripples
Long green, and the red of 650nm wavelength）Gap loss relative to gap width W graph of a relation.To 1.0um depth
For, the maximal clearance loss of highest gap loss and 0.2um to 0.5um gap widths in 3 colors is plotted in Fig. 3 E
In.It is the relation list of gap loss and gap width in Fig. 3 F.It is come between representing with elemental area percentage in Fig. 3 G
Gap area relative to pixel pitch and gap width list.Each project in Fig. 3 G form（Percentage gap area）
It is multiplied by corresponding list of items（It is, gap loss）The pixel loss that table arranges in Fig. 3 H will be produced.Fig. 3 I draw be
Different gap width（Scope is from 0.2um to 0.5um）Lower pixel loss relative to pixel pitch graph of a relation.
Fig. 3 I show the pixel pitch to 1.0um color filter thickness and between 1.8um and 2.8um
（The image sensor size scope of compact camera and camera phone）For, gap width be maintained at below 0.45um can cause it is small
In 8% pixel loss.If being less than 3%, below 0.35um gap width is needed；If being less than 1.5%, gap
Width will be in below 0.3um；And if being less than 0.5%, then gap width will be in below 0.25um.Fig. 3 I are also shown, in phase
Under the premise of gap width, the pixel loss of larger pixel is smaller.Therefore, for the pixel more than 5um, above-mentioned policy can be led
Cause to reduce at least half of pixel loss.
Referring again to Fig. 2 and 5, it can be seen clearly that, the colour that internal reflection prevents a pixel therefrom is borrowed in the first gap 422
Optical filter passes to the crosstalk of adjacent pixel.Therefore, for example same light guide of colored filter 114B, 114G each function.In Fig. 5
It is cascaded along ray a colored filter, the second light guide and the first light guide, takes incident light to catch and be delivered to
Photoelectric conversion unit 102, while will loss and crosstalk minimization.And metallic walls or optically absorptive wall are used between colored filter
To reduce the prior art of crosstalk difference, it will not lose the light for being radiated at these wall portions, and the first gap 422 is by the way that light is turned to
Reach ignored gap loss to nearest colored filter.It is and existing because not being similar to below such colored filter
There is technology（Referring to Figure 1B）Planarization layer bridged between adjacent light guides, so can also eliminate correlation crosstalk.
Air Interface can be extended to above diaphragm 410 from the colored filter side wall along the second light guide side wall, so as to
Produce the second gap 424.Air Interface between second gap 424 and the second light guide 130 can strengthen the interior anti-of the second light guide 130
Penetrate.
A diaphragm 410 can be formed with silicon nitride above insulating barrier 110, to prevent alkali metal ion from entering in silicon.Alkali
Metal ion（It can generally be found in colorized optical filtering sheet material）The unstable of MOS transistor can be caused.Diaphragm 410 can also be every
From moisture.Diaphragm 410 can be by thickness between 10,000 angstroms and 4,000 angstroms silicon nitride（Si3N4）It is made, preferably 7,
000 angstrom.If the first light guide 116 or the second light guide 130 are made up of silicon nitride, diaphragm 410 will made of silicon nitride
Continue across and positioned above insulating barrier 110, to seal such transistor isolation alkali metal ion and moisture.If the first light guide
116 are not made up of silicon nitride with the second light guide 130, then diaphragm 410 can cover the top surface of the first light guide 116 to provide class
As sealing effectiveness, or, cover the first light guide 116 side wall and bottom.
First gap 422 and the second gap 424 collectively form above the top surface of the imaging sensor and are connected to air
Opening.Another viewpoint is continuous air be present from the top surface of diaphragm 410 to colored filter 114B, the 114G
Interface.Specifically, have gap between the top surface 430 of such pixel.Can be in the figure with the presence of this opening during manufacture
As sensor manufacture during remove the waste material that is formed during the composition in the first gap 422 and the second gap 424.If because
Certain reason seals the first gap 422 below using plugging material, then the refractive index of this plugging material should be less than the coloured silk
Colo(u)r filter so that（i）Internal reflection is had in the colored filter, and（ii）The light meeting being incident in the first gap 422
It redirect to colored filter 114B, 114G.Similarly, if certain packing material fills the second gap 424, this packing material
Refractive index to be less than the second light guide 130.
Colored filter 114 can collectively form " tandem light guide " with light guide 130 and 116, and it can be used and external agency
（Such as insulating barrier 110 and gap 422 and 424）The complete internal reflection of the interface of connection directs the light to photoelectric conversion unit 102.
Different from prior art configuration, the light into colored filter will not cross the colored filter of next pixel, and be only capable of
It is enough to be transmitted to the second light guide 130 downwards.This make its top need not have lenticule focus the light into the center of the pixel region with
Prevent light from going to adjacent pixel from the colored filter of pixel.In addition to reducing manufacturing cost, the benefit of lenticule is removed also
Have and exclude the foregoing alignment error problem that may be caused between the lenticule of crosstalk and colored filter.
As previously noted, tandem light guide is better than the prior art that opaque wall material is used between colored filter
Another advantage be because the incident light in falling the first gap 422 between colored filter 114B and 114G can be redirect to
Any colored filter, therefore any light will not be lost, and light can lose showing in the opaque wall portion between such optical filter
There is technology pixel different.
Such a colored filter constructive method be better than the advantages of art methods for colored filter side wall not by structure
Photoresist and dye materials into such colored filter define.In prior art colored filter constructive method,
The colored filter formed must develop（developing）After produce vertical sidewall.This necessary condition can limit photic anti-
Agent and the selection of dye materials are lost, because dyestuff cannot absorb the light for making the photoresist photosensitive, otherwise colored filter
Bottom will receive less light, cause the bottom of colored filter can be narrower than its top.The colored filter structure of the present invention
Into method by the recess 210 being etched into support membrane 134 form colored filter side wall and with colorized optical filtering sheet material
Feature and the accuracy of photoetching are unrelated, so as to produce relatively inexpensive technique.
Another advantage better than prior art colored filter constructive method be gap between all pixels separate away from
From control very consistent and can low cost reach very high accuracy.Herein, gap separation distance is in support membrane
Line width in the single lithography step of middle etching opening（line-width）Controlled plus the lateral etch during dry-etching, two
Person is easily controlled uniformly and need not increase cost can be very accurate.If these gaps are by as prior art exists
The colored filter of 3 different colours is placed in 3 difference lithography steps and is produced, then can not possibly reach the consistent of gap width
Property, lithography step can become very expensive, and side wall profile control can become severeer.
The tandem light guide of colored filter 114 and light guide 130 is formed in identical opening in support membrane 134（Below
Referred to as " automatic alignment tandem light guide "）It is better than the advantages of prior art：Do not have between colored filter 114 and light guide 130
Any alignment error.The side wall of colored filter 114 can automatic alignment optical guides 130 side wall.
Fig. 4 A to L are the processes for showing to be formed an embodiment of the imaging sensor 100 of the present invention.The sensor meeting
It is processed into as shown in Figure 4 A so, i.e., such converting unit 102 and gate electrode 104 are formed on silicon substrate 106 and electric
Line 108 is embedded in insulating material 110.Insulator 110 can be by low-refraction（RI）Material（Such as（Silica）（RI=
1.46））Formed.Chemical mechanical milling tech can be utilized（CMP）To planarize the top of insulator 110.
As shown in Figure 4 B, insulating materials can be removed to form light guide opening 120.Opening 120 has the inclination of angle [alpha]
Side wall.Such as reactive ion etching can be used（RIE）Technique come formed it is such opening 120.To being used as insulation material using silica
For material, suitable etchant is flow-rate ratio 1:2 CF4+CHF3, it is carried in 125mTorr, 45 DEG C of argon gas.It can pass through
RF power is adjusted to adjust the Sidewall angles between 300W and 800W with 13.56MHz.
Shown in Fig. 4 C is to add light-guide material 122.For example, light-guide material 122 can be refractive index 2.0（More than exhausted
The refractive index of edge material 110（For example, silica RI=1.46））Silicon nitride.In addition, silicon nitride also provides diffusion
Barrier, prevent H2O and alkali metal ion.Can be for example, by plasma enhanced chemical vapor deposition（PECVD）To add this
Light-guide material.
Can the ablation light-guide material and leave relatively thin and flatter diaphragm 410 to cover the insulator and seal conversion
Unit 102, gate electrode 104 and electric wire 108, to prevent H2O and alkali metal ion during subsequent technique.Or such as
Fruit first light-guide material 122 is not silicon nitride, then can be after the light-guide material 122 is etched to planarize the top surface, in light
Lead the top silicon nitride film of material 122, to form diaphragm 410, its can seal converting unit 102, gate electrode 104 with
And electric wire 108, to prevent H2O and alkali metal ion.The thickness of the diaphragm 410 can between 10,000 angstroms with 4,000 angstroms it
Between, preferably 7,000 angstrom.
As shown in fig.4d, support membrane 134 is formed on the top of the silicon nitride.Support membrane 134 can be to pass through high density etc.
Gas ions（HDP）The silica of deposition.
In Fig. 4 E, the support membrane is etched to form opening.Such opening can include the side wall 136 of inclination angle beta.Angle
Degree β is selected such that β<90-asin（1/n2light guide）, to have total internal reflection in the second light guide 130, wherein,
n2light guideFor the refractive index of the second light-guide material 130.It can reduce the etching depth of each light guide with reference to the light guide of two separation
Degree.Therefore, it is easier the oblique sidewall etch effect for reaching more high precision.The light guide 130 of support membrane 134 and second respectively can be by
It is made with 110 and first light guide of insulating barrier 116 identical material with identical technique.
As shown in figure 4e, side wall can have vertical component and sloping portion.The vertical component can pass through with sloping portion
Change etch chemistries or condition of plasma during etch process to realize.Etching mode during vertical component etching
It is selected to advantageously form vertical sidewall 162, can then changes over the mode for advantageously forming sloped sidewall.
Fig. 4 F show the addition of light-guide material.For example, the light-guide material can be to pass through plasma-enhanced chemical
Vapour deposition（PECVD）The silicon nitride of deposition.
Fig. 4 G show that every one second light guide 130 is respectively provided with a recess 210.Such recess 210 is by supporting walls 212（It is branch
Support a part for film 134）Separate.Recess 210 can expose wall portion 212 and further etch into light by etching light-guide material
Top surface is led to be less than between top surface 0.6um to the 1.2um of wall portion 212 to be formed.For by absorbed unwanted color（No
Meeting is too thick and is less than the 85% of max transmissive coefficient）As long as it is formed at the final thickness of the colored filter of each recess 210
Spend sufficiently thick to provide sufficiently low transmission coefficient（Such as less than 10%）, then deeper depth also can be used.
As shown in fig. 4h, the coloured membrane material 114B with a certain color (such as blueness, foreign Red colors, or Yellow colors) can
It is applied in, to fill such recess 210 and to extend above support membrane 134.In this example, the colored materials can contain
Blue dyes.Colorized optical filtering sheet material can be made up of negative photoresist, its can form become to be insoluble in after exposure it is photic
Polymer in resist development agent.Mask（Do not show）It can be placed on above material 114B, it has opening to expose
The region that can be still left when remainder is by ablation.
The colorized optical filtering sheet material used can include and spread what inorganic particulate therein, and the inorganic particulate has small what
The small fraction of one of wavelength of light being allowed over（For example, a quarter）Diameter.For example, have the small nm of what 100 straight
The zirconium oxide and tantalum oxide particle in footpath can mix in the blue color filter of this example.It is transparent to set Yan colors and with high refraction
Rate（Preferable high what 1.9）The particle of inorganic material can increase the overall index of colored filter, to increase institute in the Strong present invention
Using colored filter side wall Inner reflect.
Fig. 4 I show the image sensor after etching step.The technique can utilize different colours（Such as green or red）'s
Material repeats, to produce the colored filter of different pixels, as shown in Fig. 4 J.The colored materials meeting finally applied
Remaining recess 210 is filled, therefore does not need masking steps.In other words, the light of exposure（exposure light）It can be applied
Each place being added on the imaging sensor wafer, to expose each place of last colored filter film.
During baking step, the last colored filter forms overlapping all pixels（Include the pixel of other colors）Film.Other
During the ablation technique directed downwardly of the follow-up colored filter overlapped shown in Fig. 4 K of last colored filter in pixel
It is removed.
With reference to figure 4G, such recess 210 provides automatic alignment characteristicses, to be directed at the colorized optical filtering sheet material and the automatically
Two light guides 130.Such recess 210 can be wider than corresponding mask open.For given pixel pitch and desired second light guide opening
To reduce the thickness of the supporting walls 212, the pressure in plasma-reaction-chamber can be improved, it is lateral to strengthen（It is, wait to
Property）Etching action（By improving ion scattering）, so as to the incision mask.
As shown in fig. 4k, colored filter 114B, 114G is etched and is exposed supporting walls 212 down, and it is support membrane
134 part.Then a part for the support membrane 134 can be removed as shown in Fig. 4 L so that for such colored filter
For mating plate 114B, 114G, there is one air/material interface.Another portion of the support membrane 134 can be removed as shown in Fig. 4 L
Point so that for the second light guide 130, there is one air/material interface, to be more conducive to internal reflection（It is closer by allowing
The light of the normal at the interface produces total internal reflection）.First gap 422 has sufficiently small width, 0.45um or smaller so that
The incident feux rouges and the light of more small wavelength being radiated in the first gap 422 redirect to colored filter 114B or 114G, so as to meeting
Improve light-receiving effect.Light can carry out internal reflection along colored filter 114B, 114G and light guide 130 and 116.Colored filter
114B, 114G refractive index are higher than air, therefore colored filter 114B, 114G provide internal reflection.Figure 16 displayings one substitute real
Apply example, among only part remove backing material between the second adjacent light guide 130.Similarly, the second light guide 130 has and can changed
Enter the Air Interface of the internal reflection property of light guide.If support membrane 134 is not completely removed, as long as the refractive index of the support membrane
（For example, silica, 1.46）Less than light-guide material（For example, silicon nitride, 2.0）, then the second light guide 130 and support membrane
Interface between 134 has good internal reflection.Similarly, the interface between the first light guide 116 and the first dielectric film 110 also can
There is good internal reflection.Fig. 7 is the top view of four pixels 200 of pel array.To including the first light guide and the second light guide two
For the embodiment of person, region B can be the region of the second light guide top surface, and region C then represents the area of the first light guide basal surface
Domain.Region A deducts the region in the first gap 422 that region B then can be between colored filter.
Figure 17 is illustrated between adjacent color optical filter 114B, 114G the only alternate embodiment of part removal support membrane 134.
Preferably not there is no 0.6 um or bigger depth and 0.45um or smaller width by the gap of support membrane filling.If such as by means of
By with by overall index Tapes to 1.7 ~ 1.8 or more amount spread by the transparent material system with 1.9 or more refractive index
Into particle and the overall index of colorized optical filtering sheet material is increased to more than 1.5, then the depth can be decreased to 0.4 um.
Figure 18 shows the not straight and vertical alternate embodiments of the opposite side Bi And of each colored filter.In this example
In, Come has more relatively low than one from adjacent color optical filter 114B, 114G opposing sidewalls with support membrane 134 in a depth
The mode Come Clip of the wide width of depth live a part for support membrane 134.By this property, support membrane 134 is to colored filter
Each of 114B, 114G apply a downward power, therefore improve colored filter by colored filter fixing in position
The holding of mating plate.Particularly, in this example, the ratio at its top surface of support membrane 134 docks adjacent color at it and filtered
Piece 114B, 114G most deep depth are wide, and reason each has the ladder of the top down of self-supported membrane 134 in what colored filter
Shape shape Like.
Figure 20 shows the alternate process step Sudden of the beginning of the processing step Sudden shown in Fig. 4 E.With being wherein etched to support membrane
Groove in 134 has Fig. 4 E for the top section for possessing vertical sidewall different, originally Figure 20 displayings open groove to cause it
Chu Li Bu Sudden with the bottom wider than the opening at top.This can reach by the following manner：Lost by anisotropy plasma-based
Carve and open groove top, wafer is held with Time rotating wafers and with an inclination angle, to cause the normal of wafer to be passed to in plasma-based
The direction of ion is at an angle.As shown in figure 20, with respect to what wafer, incoming ion（Solid line Jian Head and Virtual Xian Jian Head）It is etched to
In the support membrane of the lower section of photoresistance shade 450, From and form the side wall further goed deep into groove.Such as Figure 20 institutes See, adjacent recessed
A part for support membrane between groove shows constriction., can be to it in Fig. 4 E after being formed with one of this property groove top
The remainder of Bu Sudden descriptions is further processed, comprising corresponding plasma-based condition is switched to, with the formation light guide of what second
Groove remaining low portion.Particularly, the side wall 136 of the second light guide is formed below the constriction of what support membrane 134.
It is real that Figure 19 displayings wherein colored filter forms the replacement that what is accommodated in the groove being formed separately with groove of light guide
Apply example.Such as the colored filter 114B in the alternate embodiment in Figure 18,114G Ju You And out of plumb and straight side wall.In phase
Between the side wall of adjacent colored filter is the second support membrane 140 and air gap 422.Colored filter 114B, 114G each comfortable
The top of two light guide 130.Each optical filter can have a bottom, and the bottom is narrower 0.05 um to 0.2 than the top of the second light guide 130
Between um so that under the worst Qing Condition alignment errors of, each optical filter bottom still corresponds to the top Inner of light guide in lower section.
Figure 21 A walk Sudden to 21D explanations to form the processing of Figure 19 alternate embodiment.Process similar to what Fig. 4 A to 4G,
But do not provide to accommodate a part for the groove of colored filter.The second light-guiding film above support membrane 134 is by ablation
Or by CMP and after being removed, the shown shape Like of Figure 21 A can be presented in the second light guide 130 and support membrane 134.However, both are not
Concordant flat top must be shared because the top surface of the second light guide 130 can low what or high what support membrane 134 top.
Under latter feelings Condition, by a thin layer of the second light-guiding film left from ablation or CMP adjacent second light guide can be made mutually to interconnect
Connect.Then, the second support membrane 140 is deposited.Second support membrane 140 can be oxidation silicon or can be by will be forming colorized optical filtering
Piece 114B, 114G colorized optical filtering sheet material have 4 times or the Wet-type etching or electric paste etching Come that etch more slowly remove it is any
Material.Guang Ke Bu Sudden（It is not shown）Photoresistance shade is formed on the second support membrane 140（It is not shown）, groove is etched in film 140
To obtain the structure shown in Figure 21 B.Then, describing to form colored filter in Bu Sudden for Fig. 4 H to 4K similar to what
114B, 114G, From and obtain the structure shown in Figure 21 C, then obtain the subsequent structural shown in Figure 21 D.Finally, in similar what pin
Fig. 4 L are described in Bu Sudden, being filtered in adjacent color shown in similar what Figure 19 of Shi Chu Productivity lifes of the second support membrane 140
Gap 422 between piece 114B, 114G.
Shown in Fig. 8 is alternate embodiment, and it etches second and after the support membrane 134 is formed using same mask
Both one light guides and in a step using light-guide material filling both.Shown in Fig. 9 A to M for manufacturing this alternate embodiment
A process.The process is similar to process shown in Fig. 4 A to L, except the opening of the first light guide is the opening in the second light guide
Formed afterwards, as shown in fig. 9f, wherein any extra mask is not needed, because diaphragm 410 and the meeting of support membrane 134 of top
Hard mask is served as, to stop etchant.Two light guides are filled in the same steps shown in Fig. 9 G.
Figure 22 displayings are included in the diaphragm seal of the sealing air gap 422 above light guide 130 and colored filter 114B, 114G
500 alternate embodiment.Air gap 422 can retain air, nitrogen or other inert gases or any other gas in this embodiment
State medium.Diaphragm seal 500 can include makrolon or acrylic acid or epoxy resin, and can include multiple layers.Qi step bags of Ke Jin mono-
Expect containing inorganic particulate, dyestuff or organic Yan to cross light outside filtering ultraviolet and/or Red with what.Diaphragm seal 500 can have to be filtered in colour
0.2 Inner of the refractive index of mating plate 114B, 114G colorized optical filtering sheet material refractive index, with minimized colored filter and sealing
The reflection of interface between film.If the refractive index of colored filter is 1.55, diaphragm seal 500 can be selected as with 1.45
With the refractive index between 1.65.Diaphragm seal 500, the wherein rpm of wafer Yi great Approximately 500 can be covered by Dong Tai Xuan Tu Come Tu upwardly
Rotation, resin stream is distributed with Time by distribution tip at the center of wafer, and in the complete Run Wet wafers Top portions table of resin fluid
The Hou in face, wafer is at a higher speed（For example, 3000 rpm）Rotate to obtain equal Uniform resin thicknesses.Tree can be made by heat or UV light
Fat solidifies.Air during distribution（Or gas）Seal in what gap 422.Can be in one of distribution and high speed rotation or Two person
Period applies heating or UV irradiations to improve stickiness, to prevent resin fluid from filling gap.Final are heated or UV solidification hardening is close
Sealer 500, and what can be helped border 510 is formed as into concave shape Like because of the thermal expansion of the air/gas in gap 422.It is recessed
The film surface 510 entered helps the light ray diverging that what makes the Jin of self-sealing membrane 500 enter air gap, and towards colored filter 114G or
114B guides ray.Therefore, the depth of air gap 422 Ke Minus half compared with the embodiment without diaphragm seal 500.Wafer is at a high speed
Can be downwards during rotation.The Knot of diaphragm seal 500 can be removed by any one in known method and close the part above padding.Sealing
Film 500 can apply any embodiment of the image sensor 100 of discussion in what present application for patent.
Figure 24 is illustrated in the image sensor 100 of encapsulation in encapsulation 800.Cover glass 810 is above image sensor 100
Entered with blocks dust and Rang Guang Jin.Between cover glass 810 and image sensor 100, such as the clear adhesive such as epoxy resin
The packing space of film 820 and by heat or UV light and be cured.Diaphragm seal 500 and bonding film 820 form a hyaline membrane together, and it is filled out
The space filled between the colored filter of cover glass 810 and image sensor 100.If diaphragm seal 500 and bonding film 820 include
Identical material, then during solidifying herein, it is an equal Quality hyaline membrane to bind film 820 and diaphragm seal 500 to close And together.
Example shown in Figure 24 is Come from ShellCase（Now is Tessera）Trade name ShellOp known wafer
Grade wafer scales encapsulate.This encapsulation is sealed by lower glass plate 815 from lower section, being retained to image by epoxy resin 825 passes
Sensor 100.Outside lead 830 through reversion is electrically connected to die terminals 835 by the trace contact 840 at junction 845.Junction
845 You Time are referred to as T junctions, and contact 840 is referred to as T junctions contact.Outside lead 830 is covered by the Tu of protectiveness solder resist 850.Welding resistance
Agent 850 is electricity Ge From leads 830 and external contact and protects wire surface from Fu Erosion dielectric material.Contact 855 is attached to
The bottom of lead 830, and it is adapted to printed circuit board (PCB) of the what by known method（PCB）Installation.Contact 855 can be by such as solder
The known method such as ball or plating is formed, and can be installed through suitable shaping with what PCB.
As shown in figure 23, from above cover glass 810, incoming light ray extends only through flat interface Er Jin enters the second light guide
130.Each interface has few reflection by the smaller difference of the refractive index of what Two sides, because the refractive index great Approximately of glass are
1.46, epoxy resin 820 and diaphragm seal 500 and colored filter 114B, 114G refractive index are between 1.45 to 1.65.
Figure 10 A to H are the process of the pad 214 to exposure image sensor.As shown in Figure 10 A to B, covering
Opening 216 can be formed in first insulating materials 110 of pad 214.As shown in Figure 10 C to D, apply the first light-guide material
116 and most material 116 can be removed, thinner layer is left, to seal the first following insulating materials 110.As Figure 10 E are arrived
Shown in F, support membrane material 134 can be applied and form corresponding opening 218 wherein.As shown in Figure 10 G, the second light can be applied
Lead material 130.As shown in Figure 10 H, the opening 220 of pad 214 can be exposed with without mask etching step to be formed.The etching
Agent, which preferably has, corrodes light-guide material 116 and 130（For example, silicon nitride）Speed it is fast cross insulating materials 110 and 134（Lift
For example, silica）With colored filter 114（Photoresist）Characteristic.In CH3F/O2In to silicon nitride carry out dry type erosion
The etch-rate at quarter can compare colored filter or silica progress dry-etching is big 5 to 10 times.
Figure 11 shows antireflection（AR）The embodiment stacked, it includes top AR films 236, the 2nd AR films 234 and covered
3rd AR films 232 of lid converting unit 102.The antireflection, which stacks, can improve light from the first light guide 116 to such converting unit 102
Transmission.Part during AR is stacked can collectively form layer 230, and it can also cover substrate 106, converting unit 102 and electrode
104, to protect such component, prevent chemical pollutant and moisture.For example, the 2nd AR films 234 can be that CMOS wafer manufactures
In the contact etch stop nitride film commonly used, it is prevents the oxide etching of contact hole to prevent polysilicon contact（It connects
Contact hole would generally be more shallow than source/drain polar contact 2,000 angstroms）Over etching.3rd AR films 232 can be silica.The silica
Film can be the gate insulating film of the lower section of gate electrode 104；Or in the gate electrode in conventional deep-submicron CMOS process
Yu Inter gap walls（Do not show）Between, extend downwardly Inter gap wall liner material oxides along the side of gate electrode 104（spacer
liner oxide）Film；The silicide deposited before contact silication stops（silicide-blocking）Oxidation film, use
To prevent contact silication；Or foregoing combination；Or etched in silicide barrier oxide（It can ablation and light guide 116
All oxides in the consistent region in bottom）The code-pattern oxidation film deposited afterwards.Contacted using existing silicon nitride
Etch stop film will be a cost savings as the AR parts stacked.Identical contact etch stop film can also be in the manufacture of the light guide
In be used for prevent etch insulator 110 in opening.Finally, can before the opening during insulator 110 is filled with light-guide material
Top AR films 236 are initially formed in the openings.
The refractive index of top AR films 236 is less than light guide 116.The refractive index of 2nd AR films 234 is higher than top AR films 236.The
The refractive index of three AR films 232 is less than the 2nd AR films 234.
Top AR films 236 can be silica or silicon oxynitride, and its refractive index is about 1.46, and thickness is between 750 angstroms and 2000
Between angstrom, preferably 800 angstroms.2nd AR films 234 can be silicon nitride（Si3N4）, its refractive index is about 2.0, and thickness is between 300 angstroms
Between 900 angstroms, preferably 500 angstroms.3rd AR films 232 can be silica or silicon oxynitride（SiOxNy, wherein, 0<x<2 and 0<
y<4/3）, its refractive index is about 1.46, and thickness is between 25 angstroms and 170 angstroms, preferably 75 angstroms.3rd AR films 232 can include
The lower section of Fig. 2 gate electrodes 104 and the gate oxide of the top of substrate 106, such as the 61/009th, No. 454 Fig. 3 of U.S. Patent Application No.
Shown in.3rd AR films 232 can further include the grid wadding oxide shown in accomplice Fig. 3.Or the 3rd AR films 232
Can be by stopping that the silicide that etching is removed shown in Fig. 2 of U.S. Patent Application No. 61/009,454 stops in silicide
After oxide 64, grid wadding oxide 55 and gate oxide 54（It is consistent with the bottom of light guide 116 using having
Mask open silicide stop etching mask）, code-pattern silicon oxide deposition（blanket silicon oxide
deposition）Formed in each place of chip.
Anti-reflection structure shown in Figure 11 can be by forming the 3rd AR films 232 and the 2nd AR films respectively over the substrate
234 are made.Then insulator 110 can be formed on the 2nd AR films 234.Silicon nitride film can be deposited over by PECVD this
On one insulator 110, its mode deposited can cover and seal the insulator and the layer of lower section, to form thickness between 10,
Between 000 angstrom and 4,000 angstrom, preferably 7,000 angstrom of diaphragm 410.For example, support membrane 134 can pass through HDP silica
Deposit and formed on diaphragm 410.
Shelter support membrane 134 and apply the first etchant to etch the opening in support membrane 134.The first etchant may be selected
For there is very high selectivity to Protective coatings.For example, if support membrane 134 includes HDP silica and diaphragm 410
Comprising silicon nitride, then the first etchant can be CHF3, it etches HDP silica can be faster than silicon nitride 5 times.Then, the is applied
Two etchants are with eating thrown silicon nitride diaphragm 410.Second etchant can be CH3F/O2.Then, apply again the first etchant with
Etch the first insulator 110 and stop on the contact etch stop film 234 comprising silicon nitride.Contact etch stop layer 234
Etchant stop-layer is served as, to define the bottom of opening.Then anisotropic deposition method is passed through（For example, PECVD or
HDP silicon oxide depositions）Top AR films 236 are formed in the openings, and it mainly deposits to the bottom of opening rather than side wall.It can apply
The top AR membrane materials for any residual that etchant is extended with ablation in the side wall of the opening, for example, use the first erosion
Agent is carved to carry out dry-etching and allow wafer substrates to keep an inclination angle and around the axis rotation parallel to foreign ion beam.Then
For example, by silicon nitride PECVD light-guide material is formed in such opening.Colored filter may be formed above the light guide, and phase
Another part between a part of support membrane and adjacent light guides between adjacent colored filter can then be etched to produce institute in Fig. 5
The structure shown.
Figure 12 A to E are shown to manufacture the process that another antireflection stacks embodiment between light guide 116 and substrate 202.
With reference to figure 12E, in this embodiment, in light guide 116 and top AR films 236, the 2nd AR films 234 and the 3rd AR films 232 are included
Antireflection（AR）Etch stop film 238 is plugged between stacking.The light guide etch stop film 238 can be by identical with light guide 116
Material form, and can be silicon nitride, its thickness is between 100 angstroms and 300 angstroms, preferably 150 angstroms.Formed in the present embodiment
The AR stack the advantages of be：The thickness of the 2nd AR films 234 can be precisely controlled, its cost is more one of deposition step and erosion
Wear contact hole opening（Do not show）Oxidenitride oxide-Nitride Oxide stack rather than oxide-nitride
The complexity of thing-oxide stack can slightly increase.Preceding embodiment uses the 2nd AR films 234 to be used as light guide etch stop film and meeting
Segment thickness is lost in last insulator groove etching over etching step.
As shown in Figure 12 A to B, apply the 3rd AR films 232 and the 2nd AR films 234 in applying on substrate 106 and then top
AR films 236 are held then to apply the light guide etch stop film 238 made of silicon nitride afterwards on the 2nd AR films 234.In Figure 12 C
It is shown, form insulating barrier 110 and electric wire 108 is connected with electric wire on AR films 232,234,236 and light guide etch stop film 238
Side.Figure 12 D show the opening being etched into insulator 110, and it stops at the top of light guide etch stop film 238.Figure 12 E show this
Opening is filled with light-guide material.
The transmission coefficient that the antireflection that Figure 13 A are Figure 11 and Figure 12 E stacks is relative to the graph of a relation of optical wavelength, top AR films
236（Oxide）Nominal thickness is 800 angstroms, and change turns to +/- 10%；And the 2nd AR films 234（Nitride）Nominal thickness is 500 angstroms；
And the 3rd AR films 232（Oxide）Thickness is 75 angstroms.Transmission curve is in purple area（400nm to 450nm）Middle presentation is precipitous
It is sagging.The nominal thickness for forming the AR films 232,234,236 that AR is stacked is chosen as the maximum of the transmission curve being arranged on indigo plant
Color area（450nm to 490nm）In and non-green area（490nm to 560nm）So that any film thickness caused by manufacturing tolerance
Skew will not cause decline of the transmission coefficient in purple area to be much larger than red color area（630nm to 700nm）In.
Figure 13 B are graph of a relation of the transmission coefficient that stacks of Figure 11 and Figure 12 E antireflection relative to optical wavelength, nominal the
Two AR films（Nitride）Thickness is 500 angstroms, and change turns to +/- 10%.
The transmission coefficient that the antireflection that Figure 13 C are Figure 11 and Figure 12 E stacks is relative to the graph of a relation of optical wavelength, the 3rd AR films
232（Nitride）Nominal thickness is 75 angstroms, and change turns to +/- 10%.
Shown in Figure 14 A to G is to stack embodiment to manufacture another antireflection between light guide 116 and substrate 202
Process, stacked to provide two different AR at two different pixels, it optimizes individually the region of different colours.3rd AR films
232 and the 2nd AR films 234 be located at the top of photoelectric conversion unit 201 in Figure 14 A, similar to the embodiment shown in Figure 12 A.
In Figure 14 A, top AR films 236 deposit to the thickness of the thicker top AR films 236b shown in Figure 14 B.Then light can be applied
Carve mask（Do not show）, to produce mask open above the pixel using relatively thin top AR films 236a.Using etching step
So that the top AR films 236 below the mask open to be thinned to the relatively small thickness of top AR films 236a in Figure 14 B.Figure 14 C to 14G
Shown in subsequent step be similar to Figure 12 B to E.Green colored filter 114G can be applied with relatively thin top AR films 236a
Pixel on, and blueness with red color filter piece then in the pixel with thicker top AR films 236b.
The transmission coefficient that the antireflection that Figure 15 A are Figure 14 G stacks is relative to the graph of a relation of optical wavelength, nominal relatively thin top
AR films 236a nominal thickness is 0.12um, and the nominal thickness of the 2nd AR films 234 is 500 angstroms, and the nominal thickness of the 3rd AR films 232
Spend for 75 angstroms.The kurtosis of this graph of a relation is about 99%, is the pact that is slowly reduced down at red area center at green area
93%.This graph of a relation shows that relatively thin top AR films 236a can be used in red pixel and green pixel.This relatively thin Top
Portion AR films 236a can be used at Yang Red color pixels, and wherein Yang Red colors are the portion of the embedding patterns of Inlaid of the pixel Array row of image sensor
Point.
The transmission coefficient that the antireflection that Figure 15 B are Figure 14 G stacks is relative to the graph of a relation of optical wavelength, thicker top AR films
236b nominal thickness is 0.20um, and the nominal thickness of the 2nd AR films 234 is 500 angstroms, and the nominal thickness of the 3rd AR films 232 is
75 angstroms.This graph of a relation kurtosis is in two regions of different colours, it is, purple and red.This graph of a relation shows top
AR films 236b can be used in blue pixel and red pixel.Make at this thicker Top portions AR film 236b Ke Yellow color pixel
With Qi Medium yellow is the part of the embedding patterns of Inlaid of the pixel Array row of image sensor.
Relatively thin top AR films 236a can be used only to use thicker top AR films 236b in green pixel for pel array
In both blueness and red pixel.Or relatively thin top AR films 236a can be used in green and red pixel in the pel array
Both and use thicker top AR films 236b only in blue pixel.
By producing the 2nd different AR film thicknesses while keeping identical top AR film thicknesses, it is possible to provide another implementation
Example, it provides two different AR and stacked, each region for stacking optimization different colours.It can determine two different-thickness, often
A kind of one thickness of color region.2nd AR films can first be deposited to larger thickness.For example, 2800 angstroms of thickness Gifted changes
Blue light is Ji the transmission of Red light, and the transmission of 650 angstroms of thickness Gifted Hua Green light.Then photo etched mask can be applied, with use compared with
Mask open is produced above the imaging sensor of small 2nd AR film thicknesses.Etching step can be employed with by below the mask open
The 2nd AR films be thinned to relatively small thickness.Subsequent step is similar to Figure 12 B to E.
Although in the accompanying drawings it is stated that and show specific one exemplary embodiment, but, it should be appreciated that, these implementations
Example is only explained and is not intended to limit the present invention, and the present invention is not limited to shown and described particular configuration and arrangement, because affiliated
The technical staff in field can carry out various other amendments.
Claims (4)
1. a kind of device of the colored filter on photoelectric conversion element array in the image sensor, it is included：
A pair of adjacent colored filters, it is on a pair of photoelectric conversion units；
Wherein, the pair of adjacent colored filter clamps air gap and the support membrane under the air gap, the colorized optical filtering
The opposing sidewalls of piece are not straight and vertical,
Wherein, the nipped support membrane is wider to hold the pair of adjacent colored filter than in a lower in a higher position
Mating plate.
2. the device of colored filter according to claim 1, in addition to：
Light guide, it is under each colored filter of the pair of colored filter, for by from each colored filter
Light is sent to respective photoelectric conversion unit.
3. a kind of imaging sensor, it is included：
Cover glass；
Hyaline membrane, it is under the cover glass；And
Image sensor chip, it is under the hyaline membrane, and it includes multiple image sensor pixels on a substrate, and this is more
Each of individual image sensor pixel includes：
Photoelectric conversion unit, it is by the substrate supports；
Colored filter, completely under the hyaline membrane, the opposing sidewalls of the colored filter are simultaneously non-straight and vertical for it；
Air gap, it includes a gas and directly under the hyaline membrane；
Support membrane, under air gap, the air gap and the support membrane are all sandwiched in the colored filter and another institute for it
Between the colored filter for stating image sensor pixel,
Wherein, the nipped support membrane is wider to hold the colored filter at a more low place in a higher position ratio.
4. imaging sensor according to claim 3, wherein each of described image sensor pixel are additionally included in institute
The light guide under colored filter is stated, for the light filtered by the colored filter to be sent into the opto-electronic conversion list
Member.
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| CN201410710878.4A CN104538415B (en) | 2009-07-02 | 2009-07-02 | Optical fiber array for imaging sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200980160236.9A CN102484116B (en) | 2009-07-02 | 2009-07-02 | Light guide array for an image sensor |
| CN201410710878.4A CN104538415B (en) | 2009-07-02 | 2009-07-02 | Optical fiber array for imaging sensor |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200980160236.9A Division CN102484116B (en) | 2009-07-02 | 2009-07-02 | Light guide array for an image sensor |
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| CN112213879B (en) * | 2019-07-10 | 2021-09-03 | 成都辰显光电有限公司 | Color conversion assembly, display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825607A (en) * | 2005-01-18 | 2006-08-30 | 松下电器产业株式会社 | Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device |
| CN101308815A (en) * | 2007-05-17 | 2008-11-19 | 力晶半导体股份有限公司 | Image sensor construction and method for making the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1825607A (en) * | 2005-01-18 | 2006-08-30 | 松下电器产业株式会社 | Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device |
| CN101308815A (en) * | 2007-05-17 | 2008-11-19 | 力晶半导体股份有限公司 | Image sensor construction and method for making the same |
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