CN104513972A - Chemical vapor deposition equipment - Google Patents
Chemical vapor deposition equipment Download PDFInfo
- Publication number
- CN104513972A CN104513972A CN201410851813.1A CN201410851813A CN104513972A CN 104513972 A CN104513972 A CN 104513972A CN 201410851813 A CN201410851813 A CN 201410851813A CN 104513972 A CN104513972 A CN 104513972A
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- CN
- China
- Prior art keywords
- heating platform
- chemical vapor
- supporting seat
- depsotition equipment
- vapor depsotition
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides chemical vapor deposition equipment. The chemical vapor deposition equipment comprises a reaction cavity (100), a heating platform (200) arranged in the reaction cavity (100), a heating platform supporting seat (301) arranged below the heating platform (200) and a heating platform supporting rod (302) arranged below the heating platform supporting seat (301), wherein corresponding threaded holes are respectively formed in the heating platform (200) and a heating platform supporting plate (300), the heating platform (200) and the heating platform supporting plate (300) are fixed together by using hollow inside hexagonal bolts (400) through the threaded holes, and a heating wire (700) and a thermocouple (800) are connected to the heating platform (200) through clamping sleeve structures (500). The heating platform of the chemical vapor deposition equipment can be disassembled independently, so that the maintenance, the cleaning and the shaping of the chemical vapor deposition equipment are facilitated.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of chemical vapor depsotition equipment.
Background technology
Along with the development of electronic technology, in order to reduce the size of circuit, the normal method adopting the increase deposition number of plies, expands in vertical direction.These layers increased play a part various different in device, circuit, mainly can be used as the interlayer dielectric, metal line, resistance, surface passivation layer etc. of gate electrode, multilayer wiring.In these layers increased, the quality of deposit film has an impact to the electrical property of device and mechanical property, and and then has influence on yield rate and the output of device.
The method of thin film deposition generally includes chemical vapour deposition (CVD, Chemical Vapor Deposition) method and the large class of physical vapor deposition (PVD, PhysicalVapor Deposition) two.Wherein, chemical vapour deposition is that the gaseous mixture containing the atom needed for film or molecule is injected reaction chamber, and reacts in described reaction chamber, and its atom or molecule deposition, at substrate surface, assemble film forming process.Chemical vapour deposition because of its technique comparatively simply, do not need high vacuum, be convenient to prepare combination product, sedimentation rate is high, and the various films of deposition have the advantages such as good stepcoverage performance and are widely used in the manufacture of semiconductor devices.
Refer to Fig. 1, and composition graphs 2, Fig. 1, Figure 2 shows that a kind of existing chemical vapor depsotition equipment.As shown in Figure 1 and Figure 2, this chemical vapor depsotition equipment comprises: reaction chamber 1, the heating platform 2 be located in described reaction chamber 1, be located at heating supporting seat 3 below described heating platform 2, be located at heating platform support bar 4 below described heating platform 2, heating platform 2 being provided with the dowel hole 7 for locating the substrate be placed on heating platform 2, being positioned at the heater wire 7 and thermopair 8 that are connected to heating platform 2 below described heating platform support bar 4.During deposition, reactant gases is sprayed on the substrate surface that is positioned on described heating platform 2, is heated by described heater wire 7 and thermopair 8 pairs of heating platforms 2, thus at described substrate surface formation of deposits film.Wherein, as shown in Figure 2, described heating platform 2 and heating platform support bar 4 are integral type structure, need related heating platform support bar 4 integral demounting when dismantling heating platform 2, dismounting difficulty, and often easy disassembling causes damage to sealed bottom point 5, sealed bottom is caused to be deteriorated, easily there are wearing and tearing, tilt in heating platform support bar 4 simultaneously, causes parts damages, is unfavorable for maintenance and the cleaning shaping of chemical vapor depsotition equipment.
Summary of the invention
The object of the present invention is to provide a kind of chemical vapor depsotition equipment, the heating platform of described chemical vapor depsotition equipment can be dismantled separately, prevent the parts damages of chemical vapor depsotition equipment, be convenient to chemical vapor depsotition equipment safeguard and cleaning shaping, ensure the quality of the film of chemical vapor depsotition equipment deposition.
For achieving the above object, the invention provides a kind of chemical vapor depsotition equipment, comprising: reaction cavity, the heating platform be located in described reaction cavity, be located at heating platform supporting seat below described heating platform, be located at heating platform support bar below described heating platform supporting seat;
Described heating platform and heating platform supporting seat are corresponding is respectively provided with at least 2 threaded holes, is fixed on heating platform supporting seat by hollow hexagon socket head cap screw by heating platform;
Described heating platform and heating platform supporting seat are also corresponding is provided with at least 2 ferrule structures, by described ferrule structure, heater wire and thermopair is connected to heating platform.
Described chemical vapor depsotition equipment also comprises the corresponding sealing groove be located on two contact surfaces of heating platform and heating platform supporting seat respectively, and in described sealing groove, correspondence is provided with sealing-ring.
Described heating platform supporting seat and heating platform support bar are integral type structure, heating platform described in common support.
Described hollow hexagon socket head cap screw comprises: outer wall, the inwall relative with outer wall, the through hole surrounded by inwall, be located at hexagonal groove in described via bottoms.
The outer wall of described hollow hexagon socket head cap screw is aluminum alloy materials, and inwall is stupalith.
Described through hole is for placing the steady brace for substrate orientation.
Described ferrule structure comprises: be located at the groove on described heating platform and the terminal stud that be arranged on described heating platform supporting seat on corresponding with described cutting ferrule, and the upper end of described terminal stud is higher than the upper plane of heating platform supporting seat.
Heater wire or thermopair is connected with in described terminal stud.
The inwall of described groove is stupalith, and described terminal stud is arranged in the outer of this part of described heating platform supporting seat and is arranged with one deck ceramic wall.
Beneficial effect of the present invention: the invention provides a kind of chemical vapor depsotition equipment, by arranging corresponding threaded hole on heating platform and heating platform back up pad respectively, by the hexagon socket head cap screw of this threaded hole hollow, heating platform and heating platform back up pad are fixed together, this heating platform can be dismantled separately, by ferrule structure, heater wire and thermopair are connected to heating platform, realize the heating function of this heating platform, overcome in existing installation when dismantling heating platform and need to dismantle heating platform support bar simultaneously, thus cause the sealed bottom of chemical vapor depsotition equipment to be deteriorated, the problem that heating platform support bar damages, be convenient to chemical vapor depsotition equipment safeguard and cleaning shaping, ensure the quality of the film of chemical vapor depsotition equipment deposition.
In order to further understand feature of the present invention and technology contents, refer to following detailed description for the present invention and accompanying drawing, but accompanying drawing only provides reference and explanation use, is not used for being limited the present invention.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, by the specific embodiment of the present invention describe in detail, will make technical scheme of the present invention and other beneficial effect apparent.
In accompanying drawing,
Fig. 1 is the structural representation of existing chemical vapor depsotition equipment;
Fig. 2 is heating platform and the heating platform supporting bar structure schematic diagram of existing chemical vapor depsotition equipment;
Fig. 3 is the structural representation of chemical vapor depsotition equipment of the present invention;
Fig. 4 is the Split type structure schematic diagram of the hot spots of chemical vapor depsotition equipment of the present invention;
Fig. 5 is the hollow hexagon socket head cap screw schematic diagram in chemical vapor depsotition equipment of the present invention;
Fig. 6 is the ferrule structure schematic diagram in chemical vapor depsotition equipment of the present invention.
Embodiment
For further setting forth the technique means and effect thereof that the present invention takes, be described in detail below in conjunction with the preferred embodiments of the present invention and accompanying drawing thereof.
The invention provides a kind of chemical vapor depsotition equipment, comprising: reaction cavity 100, the heating platform 200 be located in described reaction cavity 100, be located at heating platform supporting seat 301 below described heating platform 200, be located at heating platform support bar 302 below described heating platform supporting seat 301.
Wherein, described heating platform 200 and the parts of heating platform supporting seat 301 for being separated, described heating platform 200 and heating platform supporting seat 301 are corresponding is respectively provided with at least 2 threaded holes, utilizes hollow hexagon socket head cap screw 400 to be fixed on heating platform supporting seat 301 by heating platform 200 by this threaded hole.
Concrete, described heating platform 200 is provided with at least 2 threaded holes, and be provided with the threaded hole of equal amts in the position that described heating platform supporting seat 301 is corresponding with it, nominal diameter, the pitch of described threaded hole are all identical.Preferably, described threaded hole is symmetrical arranged about heating platform support bar 302.
Described hollow hexagon socket head cap screw 400 comprises: outer wall 401, the inwall 402 relative with outer wall 401, the through hole 403 surrounded by inwall 402, be located at hexagonal groove 404 in bottom described through hole 403.The nominal diameter of described hollow hexagon socket head cap screw 400, pitch and described threaded hole match.The outer wall 401 of described hollow hexagon socket head cap screw 400 is aluminum alloy materials, inwall 402 is stupalith, because the temperature in reaction chamber 100 is higher, in addition, also have the interference of radio-frequency electromagnetic, and pottery is a kind of material of high temperature resistant, resistance to Radio frequency interference, therefore, inwall 402 Ceramics material, can ensure that through hole 403 does not deform, and ensures the precision of substrate orientation.Described through hole 403 is for placing the steady brace for substrate orientation, concrete, and described steady brace is thimble, and described steady brace positions the substrate be placed on heating platform 200 through through hole 403.
Described heating platform 200 and heating platform supporting seat 301 are also corresponding is provided with at least 2 ferrule structures 500, by described ferrule structure 500, heater wire 700 and thermopair 800 is connected to heating platform 200.
Concrete, described ferrule structure 500 comprises: be located at the groove 501 on described heating platform 200 and the terminal stud 502 that be arranged on described heating platform supporting seat 301 on corresponding with described groove 501, and the upper end of described terminal stud 502 is higher than the upper plane of heating platform supporting seat 301.
Preferably, described groove 501 inside is provided with spring, is fixed with pairs of posts 502.
Preferably, described groove 501 is cylindrical, described terminal stud 502 is cylindrical structure, and the diameter of described groove 501 is slightly larger than the diameter of described terminal stud 502, thus the part making described terminal stud 502 protrude from heating platform supporting seat 301 upper surface can be engaged in groove 501 completely.
Concrete, the material of described terminal stud 502 is aluminium alloy, is connected with heater wire 700 or thermopair 800 in described terminal stud 502, is engaged with groove 501 by described terminal stud 502, heater wire 700 or thermopair 800 are connected to heating platform 200, realize the heating function of heating platform 200.
Preferably, the inwall 503 of described groove 501 is stupalith, and described terminal stud 502 is arranged in the outer of this part of described heating platform supporting seat 301 and is arranged with one deck ceramic wall 504, provides insulation protection with pairs of posts 502 and docking circuit.
For strengthen heating platform 200 and heating platform back up pad 301 further contact surface between stopping property, described chemical vapor depsotition equipment also comprises the corresponding sealing groove 600 be located on two contact surfaces of heating platform 200 and heating platform supporting seat 301 respectively, in described sealing groove 600, correspondence is provided with sealing-ring, concrete, described sealing groove 600 is O type sealing groove, and described sealing-ring is O RunddichtringO.
Finally, heating platform supporting seat 301 and heating platform support bar 302 are integral type structure, heating platform 200 described in common support.
Especially, described heating platform 200, when dismantling, only needs to open reaction cavity 100, open and back out hollow hexagon socket head cap screw 400, press ferrule structure 500, heating platform 200 can be taken out separately, method for dismounting is simple and convenient, does not affect miscellaneous part, is convenient to the clean and maintenance of heating platform 200.
In sum, the invention provides a kind of chemical vapor depsotition equipment, by arranging corresponding threaded hole on heating platform and heating platform back up pad respectively, by the hexagon socket head cap screw of this threaded hole hollow, heating platform and heating platform back up pad are fixed together, this heating platform can be dismantled separately, by ferrule structure, heater wire and thermopair are connected to heating platform, realize the heating function of heating platform, overcome in existing installation when dismantling heating platform and need to dismantle heating platform support bar simultaneously, thus cause the sealed bottom of chemical vapor depsotition equipment to be deteriorated, the problem that heating platform support bar damages, be convenient to chemical vapor depsotition equipment safeguard and cleaning shaping, ensure the quality of the film of chemical vapor depsotition equipment deposition.
The above, for the person of ordinary skill of the art, can make other various corresponding change and distortion according to technical scheme of the present invention and technical conceive, and all these change and be out of shape the protection domain that all should belong to the claims in the present invention.
Claims (9)
1. a chemical vapor depsotition equipment, it is characterized in that, comprising: reaction cavity (100), the heating platform (200) be located in described reaction cavity (100), be located at described heating platform (200) below heating platform supporting seat (301), be located at described heating platform supporting seat (301) below heating platform support bar (302);
Described heating platform (200) is provided with at least 2 threaded holes with heating platform supporting seat (301) is corresponding respectively, is fixed on heating platform supporting seat (301) by hollow hexagon socket head cap screw (400) by heating platform (200);
Described heating platform (200) and heating platform supporting seat (301) are also corresponding is provided with at least 2 ferrule structures (500), by described ferrule structure (500), heater wire (700) and thermopair (800) is connected to heating platform (200).
2. chemical vapor depsotition equipment as claimed in claim 1, it is characterized in that, also comprise correspondence respectively and be located at sealing groove (600) on two contact surfaces of heating platform (200) and heating platform supporting seat (301), described sealing groove (600) interior correspondence is provided with sealing-ring.
3. chemical vapor depsotition equipment as claimed in claim 1, it is characterized in that, described heating platform supporting seat (301) and heating platform support bar (302) are integral type structure, heating platform described in common support (200).
4. chemical vapor depsotition equipment as claimed in claim 1, it is characterized in that, described hollow hexagon socket head cap screw (400) comprising: outer wall (401), the inwall (402) relative with outer wall (401), the through hole (403) surrounded by inwall (402), be located at described through hole (403) bottom interior hexagonal groove (404).
5. chemical vapor depsotition equipment as claimed in claim 4, it is characterized in that, the outer wall (401) of described hollow hexagon socket head cap screw (400) is aluminum alloy materials, and inwall (402) is stupalith.
6. chemical vapor depsotition equipment as claimed in claim 4, it is characterized in that, described through hole (403) is for placing the steady brace for substrate orientation.
7. chemical vapor depsotition equipment as claimed in claim 1, it is characterized in that, described ferrule structure (500) comprising: be located at the groove (501) on described heating platform (200) and the terminal stud (502) that be arranged on described heating platform supporting seat (301) on corresponding with described groove (501), and the upper end of described terminal stud (502) is higher than the upper plane of heating platform supporting seat (301).
8. chemical vapor depsotition equipment as claimed in claim 7, is characterized in that, be connected with heater wire (700) or thermopair (800) in described terminal stud (502).
9. chemical vapor depsotition equipment as claimed in claim 7, it is characterized in that, the inwall (503) of described groove (501) is stupalith, and described terminal stud (502) is arranged in the outer of this part of described heating platform supporting seat (301) and is arranged with one deck ceramic wall (504).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410851813.1A CN104513972A (en) | 2014-12-31 | 2014-12-31 | Chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410851813.1A CN104513972A (en) | 2014-12-31 | 2014-12-31 | Chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104513972A true CN104513972A (en) | 2015-04-15 |
Family
ID=52789841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410851813.1A Pending CN104513972A (en) | 2014-12-31 | 2014-12-31 | Chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104513972A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6180926B1 (en) * | 1998-10-19 | 2001-01-30 | Applied Materials, Inc. | Heat exchanger apparatus for a semiconductor wafer support and method of fabricating same |
| TW200834688A (en) * | 2006-12-20 | 2008-08-16 | Applied Materials Inc | Prevention of film deposition on PECVD process chamber wall |
| CN101772837A (en) * | 2008-03-11 | 2010-07-07 | 东京毅力科创株式会社 | Loading table structure and processing device |
| CN102341902A (en) * | 2009-03-03 | 2012-02-01 | 东京毅力科创株式会社 | Placing table structure, film forming apparatus, and raw material recovery method |
-
2014
- 2014-12-31 CN CN201410851813.1A patent/CN104513972A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6180926B1 (en) * | 1998-10-19 | 2001-01-30 | Applied Materials, Inc. | Heat exchanger apparatus for a semiconductor wafer support and method of fabricating same |
| TW200834688A (en) * | 2006-12-20 | 2008-08-16 | Applied Materials Inc | Prevention of film deposition on PECVD process chamber wall |
| CN101772837A (en) * | 2008-03-11 | 2010-07-07 | 东京毅力科创株式会社 | Loading table structure and processing device |
| CN102341902A (en) * | 2009-03-03 | 2012-02-01 | 东京毅力科创株式会社 | Placing table structure, film forming apparatus, and raw material recovery method |
Non-Patent Citations (1)
| Title |
|---|
| （美）奥林著；刘卫国等译: "《薄膜材料科学：第2版》", 28 February 2013 * |
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Application publication date: 20150415 |