CN104501729A - Optical fiber F-P strain gauge based on MEMS technology and formation method thereof - Google Patents
Optical fiber F-P strain gauge based on MEMS technology and formation method thereof Download PDFInfo
- Publication number
- CN104501729A CN104501729A CN201410728295.4A CN201410728295A CN104501729A CN 104501729 A CN104501729 A CN 104501729A CN 201410728295 A CN201410728295 A CN 201410728295A CN 104501729 A CN104501729 A CN 104501729A
- Authority
- CN
- China
- Prior art keywords
- silicon
- face
- film
- reflecting film
- optical fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Length Measuring Devices By Optical Means (AREA)
Abstract
The invention discloses an optical fiber F-P strain gauge based on an MEMS technology and a formation method thereof, and belongs to the field of high-precision optical fiber sensing measurement. The optical fiber F-P strain gauge mainly comprises an F-P strain sensitive MEMS chip and a collimated and beam expanded optical fiber. The F-P strain sensitive MEMS chip is composed of an SOI strain beam, a glass fixed pole and a silicon bushing. The SOI strain beam comprises top layer silicon, an intermediate oxide layer and bottom layer silicon. The SOI strain beam is fixed on the glass fixed pole via silicon-glass anodic bonding. The glass fixed pole is fixed on the silicon bushing via silicon-glass anodic bonding. The collimated and beam expanded optical fiber is fixed on the silicon bushing via soldering material. The F-P pressure sensitive MEMS chip is prepared on the basis of an MEMS micromachining technology so that miniaturized and mass manufacturing of the device can be realized. The strain gauge has high-fineness F-P interference spectrum, high sensitivity and high measurement precision can be acquired by adopting wavelength signal demodulation, and series connection of multiple strain gauges on the single-core optical fiber can be realized via wavelength division multiplexing and time division multiplexing.
Description
Technical field
The present invention relates to the strain of a kind of fiber F-P based on MEMS technology and take into account forming method, belong to high-precision optical fiber sensing measurement field.
Background technology
In engineering measuring technology, strain measurement is one of basis and important technology the most.Resistance strain measurement method is the basic traditional means of one obtaining strain-gauge test data, but, resistance strain gage anti-fatigue performance is poor, zero point drift is serious, be subject to the impact of the environmental factors such as electromagnetic field, temperature, humidity, chemical corrosion, long-term on-line measurement cannot be used for, the demand of accurate monitor strain in high temperature, electromagnetic environment can not be met.
In recent years, Fibre Optical Sensor is as a kind of novel measurement means, because its anti-interference (as electromagnetic field, humidity, chemical corrosion etc.) is strong, the life-span is long, reusability good (as wavelength-division multiplex and time division multiplex), can the good characteristic such as long distance signal transmission, in engineering survey and scientific experimentation, obtain increasingly extensive application.In single-point or quasi-distributed Multipoint strain gauging field, being most widely used especially in fiber grating strain and fiber F-P strainometer.
Fiber grating processing and fabricating is simple, serial or parallel connection networking is easy, be widely applied in civil engineering structure safety monitoring fields such as bridge, dam, tunnel, skyscrapers, in the test for static load such as aircraft, boats and ships and monitoring structural health conditions, also there is application in recent years, become a kind of increasingly mature strain measurement technique means.
Compared with fiber grating strain meter, fiber F-P strainometer has more compact structure, especially sensitivity and high temperature resistant in there is the incomparable advantage of fiber grating strain meter.Therefore, in recent years in high temperature, field of high-precision measurement such as Aero-Space, national defense and military and industry manufactures, fiber F-P strainometer has shown irreplaceable exclusive technical advantage.
In the manufacturing process of fibre-optical F-P sensor, making and the encapsulation in the most key is F-P optical interference chamber, be made up of two parallel planes with certain reflectivity because its principle of work determines F-P optical interference chamber, light beam betwixt multiple reflections forms multiple-beam interference, therefore, the surface smoothness of two planes of reflection in F-P optical interference chamber and the depth of parallelism have harsh requirement, and guarantee obtains good signal to noise ratio (S/N ratio).The mass that traditional fiber end face manufacturing process is difficult to realize F-P optical interference chamber makes, and the long-time stability after the alignment precision of two fiber end faces and encapsulation are also insoluble problems.In recent years, the appearance of deep ultraviolet laser process technology and femtosecond laser process technology has driven the fast development of optical fiber micro-nano technology technology, both after fiber end face ablation microcavity, F-P optical interference chamber can be constructed by fiber end face welding, also directly axially F-P optical interference chamber can be formed by cutting cutting to optical fiber, thus achieve the mass manufacture in F-P optical interference chamber, significantly reduce the volume of fiber F-P strainometer simultaneously.But, these based on fiber end face processing or the F-P optical interference chamber that goes out of optical fiber body produced by micro processing due to best bright finish reflecting surface cannot be obtained, also the optical reflectivity being improved reflecting surface by optical coating is difficult to, therefore, be difficult to the interference spectum fineness improving F-P optical interference chamber, be difficult to improve Measurement Resolution further, small-range, high sensitivity strain measurement application (as high-speed wind tunnel aerodynamics force measurement, industrial circle multi-components dynamic force and torgue measurement) cannot be met; And due to the interference fineness factor in F-P optical interference chamber low, intensity modulated Demodulation Type and phase-modulation Demodulation Type signal receiving mode can only be adopted, easily by the impact of light source power fluctuation and optical fiber bending.
Summary of the invention
In view of this, an object of the present invention is to provide a kind of fiber F-P strainometer based on MEMS technology, described fiber F-P strainometer have high-fineness F-P interference spectum, wavelength signals demodulation can be adopted to obtain high sensitivity and high measurement accuracy and the serial connection of many strainometers on single-core fiber can be realized by wavelength-division multiplex and time division multiplex; Two of object is to provide the device of strainometer described in a kind of forming method of the fiber F-P strainometer based on MEMS technology to adopt MEMS technology to make, and can realize the microminiaturization of device, batch unification makes.
Object of the present invention is realized by following technical scheme:
Based on a fiber F-P strainometer for MEMS technology, described fiber F-P strainometer mainly comprises F-P strain sensitive MEMS chip and collimator and extender optical fiber;
Wherein, F-P strain sensitive MEMS chip is made up of SOI strain beam, glass fixed pole and silicon sleeve pipe;
Described SOI strain beam comprises top layer silicon, intermediate oxide layer and bottom silicon; Wherein, a side end face of bottom silicon deposits anti-reflection film and passivation layer; Opposite side end face deposits high-reflecting film; Intermediate oxide layer and top layer silicon are all processed with center pit, and described center pit is coaxial, and aperture just as;
Described glass fixed pole one side end face deposits anti-reflection film, and opposite side end face deposits high-reflecting film;
Described silicon sleeve pipe is processed with center pit;
The upper end of described collimator and extender optical fiber is provided with GRIN Lens or equivalent optics (realizing the parallel of fiber exit light to expand); The outgoing parallel beam diameter of described collimator and extender optical fiber is greater than fibre core diameter.
Integrated connection closes:
SOI strain beam is fixed on glass fixed pole by silicon-glass anodic bonding, and bonding face is that in soi wafer, top layer silicon deposits the end face that the end face of high-reflecting film side and glass fixed pole deposit high-reflecting film side; Glass fixed pole is fixed on silicon sleeve pipe by silicon-glass anodic bonding, and bonding face is that glass fixed pole deposits the end face of anti-reflection film side and the end face of silicon sleeve pipe side; Collimator and extender optical fiber is coaxially fixed on silicon sleeve pipe by solder; Wherein, the inner peripheral surface of intermediate oxide layer and top layer silicon center pit, top layer silicon deposit the end face that the end face of high-reflecting film I side and glass fixed pole deposit high-reflecting film II side and form closed cavity one; The inner peripheral surface in silicon cannula center hole, glass fixed pole deposit anti-reflection film I side end face, with collimator and extender optical fiber upper surface form confined space two; Region between high-reflecting film I and high-reflecting film II forms F-P optical interference chamber; The central point of described anti-reflection film I, anti-reflection film I, high-reflecting film I and high-reflecting film II is positioned on the axis of top layer silicon center pit; And the area of anti-reflection film I, anti-reflection film I, high-reflecting film I and high-reflecting film II is all greater than the outgoing beam area of collimator and extender optical fiber, described beam diameter is 50 ~ 300 μm.
The preferred SiO of described anti-reflection film constituent material
2/ Ta
2o
5composite dielectric film, SiO
2/ TiO
2composite dielectric film and SiO
2/ Si
3n
4one in composite dielectric film;
The preferred SiO of high-reflecting film
2/ Ta
2o
5composite dielectric film, SiO
2/ TiO
2composite dielectric film and SiO
2/ Si
3n
4one in composite dielectric film;
Wherein, the high-reflecting film on SOI strain beam bottom silicon also can adopt metallic film material; Described metal is gold or aluminium preferably; When the high-reflecting film on bottom silicon adopts metallic film material, its right end face of bottom silicon can not deposit anti-reflection film.
Principle of work:
Fiber F-P strainometer utilizes Fabry-Perot (Fabry-Perot, be called for short F-P) principle of interference: when coherent light beam incides F-P strain sensitive MEMS chip along collimator and extender optical fiber, between the high-reflecting film and the high-reflecting film of SOI strain beam bottom silicon left end face of glass fixed pole its right end face, multiple reflections forms multiple-beam interference, and Bing Yanyuan road turns back to collimator and extender optical fiber.The interference output signal of collimator and extender optical fiber is turned back to relevant to the length of the microcavity between the high-reflecting film of glass fixed pole and the high-reflecting film of SOI strain beam bottom silicon along former road.Under the effect of external strain, the length of the microcavity between the high-reflecting film of glass fixed pole and the high-reflecting film of SOI strain beam bottom silicon changes, make wavelength or the corresponding change of phase place of the interference output signal turning back to collimator and extender optical fiber, the external stress strain that can realize thus acting on F-P fiber optic strain gage is accurately measured.
Based on a forming method for the fiber F-P strainometer of MEMS technology, the concrete steps of described method are as follows:
(1) utilize Deep RIE technique to etch after carrying out photoetching treatment in the top layer silicon of soi wafer, form circular hole in the axis of top layer silicon; Etching depth is the thickness of top layer silicon;
(2) utilize wet etching or dry etching to be removed by the intermediate oxide layer that soi wafer exposes, form circular hole in the axis of intermediate oxide layer;
(3) end face deposition high-reflecting film (reflectivity is higher than 95%) in bottom silicon side; Graphical treatment is carried out to described high-reflecting film; Obtain SOI strain beam;
(4) end face deposition high-reflecting film (reflectivity 95 ~ 96%) in glass fixed pole side; Graphical treatment is carried out to described high-reflecting film;
(5) the glass fixed pole that the soi wafer obtained step (1) ~ (3) and step (4) obtain carries out silicon-glass anodic bonding, for top layer silicon in soi wafer deposits the end face that the end face of high-reflecting film side and glass fixed pole deposit high-reflecting film side;
(7) glass fixed pole does not deposit anti-reflection film with the end face of soi wafer bonding side after bonding, and carries out graphical treatment to described anti-reflection film;
(8) two upper surfaces throwing silicon chips after oxidation carry out photoetching, erode the oxide layer in litho pattern; Subsequently using oxide layer and photoresist as mask, adopt Deep RIE technique to etch, the axis on two throwing silicon chip forms circular hole, obtains round-meshed silicon sleeve pipe; Described Circularhole diameter is greater than the diameter of collimator and extender optical fiber;
(9) silicon sleeve pipe step (8) obtained and glass fixed pole carry out silicon-glass anodic bonding, and bonding face is that glass fixed pole deposits the end face of anti-reflection film side and the end face of silicon sleeve pipe side; Subsequently, successively at opposite side end face deposition anti-reflection film and the passivation layer of SOI strain beam bottom silicon, and graphical treatment is carried out to anti-reflection film and passivation layer, obtain F-P strain sensitive MEMS chip;
(10) collimator and extender optical fiber is fixed in the circular hole of silicon sleeve pipe in F-P strain sensitive MEMS chip by solder, obtains fiber F-P strainometer of the present invention.
Wherein, high-reflecting film technique or Lift-off technique is corroded after described high-reflecting film graphical treatment preferably adopts photoetching again;
Anti-reflection film technique or Lift-off technique is corroded again after described anti-reflection film graphical treatment preferably adopts photoetching.
Beneficial effect
(1) high sensitivity optical fiber F-P strain detecting technology combines with MEMS Micrometer-Nanometer Processing Technology by fiber F-P strainometer of the present invention, has the remarkable technical advantages such as operating temperature range is wide, survive chemical burn into electromagnetism interference.
(2) in fiber F-P strainometer of the present invention, the soi wafer of F-P strain sensitive MEMS chip efficiently solves the problems such as the existing F-P strain transducer both ends of the surface depth of parallelism is poor, F-P cavity length can not accurately control, thus realizes the batch unification making of high precision, high-resolution F-P strainometer.
(3) in fiber F-P strainometer of the present invention, SOI is adopted to make strain beam, form F-P strain sensitive chamber by the high-reflecting film of SOI strain beam bottom silicon left end face and the high-reflecting film of glass fixed pole its right end face, the initial length of F-P cavity is strictly controlled by the intermediate oxide layer of soi wafer and the thickness of top layer silicon; Solve the problem that existing F-P strain transducer F-P cavity initial cavity length can not accurately control, the batch consistance of F-P strainometer can be ensured; Bottom silicon and the glass fixed pole of both sides, F-P strain sensitive chamber SOI strain beam all retain original size, and the intermediate oxide layer of F-P strain sensitive cavity outer wall and top layer silicon are annular, make under the effect of external strain, draw, annular intermediate oxide layer that compressive strain concentrates on SOI strain beam and top layer silicon region, not only reduce the equivalent stiffness of strainometer, and ensure that the both sides high-reflecting film of F-P cavity keeps low-down warpage, avoid the problem that interference spectrum deterioration under effects of strain makes accuracy of detection and resolution reduce.
(4) high-reflecting film on the bottom silicon of the soi wafer in fiber F-P strainometer of the present invention can adopt metallic film material, when the high-reflecting film on bottom silicon adopts metallic film material, the upper surface of bottom silicon can avoid interference the appearance of F-P signal without the need to depositing anti-reflection film.
(5) the method for the invention prepares F-P strain sensitive MEMS chip based on MEMS micro-processing technology, one of them reflecting surface in its F-P optical interference chamber is form after the bottom silicon initial polishing surface deposition high-reflecting film of soi wafer, another one reflecting surface is form after the initial polishing surface deposition high-reflecting film of glass sheet, all very bright and clean and smooth, after being fixed by silicon-glass anodic bonding, there is the fabulous depth of parallelism, very high F-P optical interference chamber can be obtained and interfere fineness, its fineness factor is also that free spectrum width FSR is not less than 20 with the ratio of signal spectrum three dB bandwidth FWHM, wavelength signals demodulation mode can be adopted to carry out strain signal detection, improve strain resolution and measuring accuracy, solve F-P optical interference chamber adopt intensity modulated demodulation method and the sensitivity existing for phase-modulation demodulation method low, by problems such as light source power fluctuation and fiber kinks affect.
(6) the F-P strain sensitive MEMS chip prepared based on MEMS micro-processing technology of the present invention carries axial circular hole, for bonding or form fiber F-P strainometer after being welded and fixed collimator and extender optical fiber, achieve the microminiaturization encapsulation of fiber F-P strainometer, reduce the initial encapsulation stress of fiber F-P strainometer, improve the Temperature repeatability of fiber F-P strainometer and long-term zero stability.
(7) fiber F-P strainometer of the present invention is by adopting collimator and extender optical fiber, parallel for the hot spot diameter more than 50 μm that expands is carried out light path coupling, can reduce because of beam divergence, angular deviation and the signal severe exacerbation that causes, thus reduce the difficulty of coupling package.
(8) the method for the invention can realize the mass manufacture of fiber F-P strainometer, fiber F-P strainometer initial cavity long, strain measurement sensitivity, the batch consistance of the key parameters such as range is easy to ensure, Aero-Space can be widely used in, traffic, the novel optical fiber aerodynamics force measurement balance that the field aerodynamic tests such as the energy are badly in need of, also can be used for metallurgy, the high temperature of power field is weighed and boiler, the high temperature strain measurement of the special equipments such as pressure pipeline, combine at needs high-acruracy survey multi-components, the application of force and moment especially possesses skills advantage, meet the demand of the national economic development to high-end surveying instrument.
(9) fiber F-P strainometer of the present invention is directly encapsulated by F-P strain sensitive MEMS chip and collimator and extender optical fiber integration, has good shock resistance overload capacity and high reliability, follow-up non-maintaining, can accurately measure for a long time.Significant advantage is had more in installation operation inconvenience, application scenario difficult in maintenance.
Accompanying drawing explanation
Fig. 1 is the structural representation of fiber F-P strainometer of the present invention;
Fig. 2 is the structural representation of F-P strain sensitive MEMS chip;
Fig. 3 is the process chart of fiber F-P strainometer of the present invention;
Fig. 4 is the high-fineness optical interference spectrum of fiber F-P strainometer of the present invention;
Fig. 5 is the low fineness typical optical interference spectum of existing F-P strainometer;
Fig. 6 is the wavelength-strain actual measurement characteristic of fiber F-P strainometer of the present invention;
Fig. 7 is the wavelength-division multiplex+time division multiplex networking diagram of fiber F-P strainometer of the present invention.
Wherein, 1-F-P strain sensitive MEMS chip, 2-collimator and extender optical fiber, 3-glass sheet, 4-is two throws silicon chip, 5-top layer silicon, 6-intermediate oxide layer, 7-bottom silicon, 8-anti-reflection film I, 9-high-reflecting film II, 10-passivation layer, 11-anti-reflection film II, 9-high-reflecting film II.
Embodiment
Below in conjunction with the drawings and specific embodiments in detail the present invention is described in detail, but is not limited thereto.
Embodiment
As shown in Figure 1, described fiber F-P strainometer mainly comprises F-P strain sensitive MEMS chip 1 and collimator and extender optical fiber 2 to a kind of structural representation of the fiber F-P strainometer based on MEMS technology;
Wherein, as shown in Figure 2, described F-P strain sensitive MEMS chip 1 is made up of SOI strain beam, glass fixed pole 3 and silicon sleeve pipe 4 structural representation of F-P strain sensitive MEMS chip 1;
Described SOI strain beam comprises top layer silicon 5, intermediate oxide layer 6 and bottom silicon 7; Wherein, the end face of bottom silicon 7 side deposits graphical anti-reflection film 8 and passivation layer 10, and opposite side end face deposits high-reflecting film 9; Intermediate oxide layer 6 and top layer silicon 5 are all processed with center pit, and described center pit is coaxial, and aperture just as;
The end face of described glass fixed pole 3 side deposits anti-reflection film 8, and the end face of opposite side deposits high-reflecting film 9;
Described silicon sleeve pipe 4 is processed with center pit;
The upper end of described collimator and extender optical fiber 2 is provided with GRIN Lens or equivalent optics; The outgoing parallel beam diameter of described collimator and extender optical fiber 2 is greater than fibre core diameter;
Described high-reflecting film 9, anti-reflection film 8, intermediate oxide layer 6 and top layer silicon 5 are coaxial; And the area of high-reflecting film 9 and anti-reflection film 8 is all greater than the outgoing beam area of collimator and extender optical fiber 2, described beam diameter is 50 ~ 300 μm.
Integrated connection closes:
SOI strain beam is fixed on glass fixed pole 3 by silicon-glass anodic bonding, and bonding face is that in soi wafer, top layer silicon 5 deposits the end face that the end face of high-reflecting film 9 side and glass fixed pole 3 deposit high-reflecting film 9 side; Glass fixed pole 3 is fixed on silicon sleeve pipe 4 by silicon-glass anodic bonding, and bonding face is that glass fixed pole 3 deposits the end face of anti-reflection film 8 side and the end face of silicon sleeve pipe 4 side; Collimator and extender optical fiber 2 is welded in the center pit of silicon sleeve pipe 4 by solder; Wherein, the inner peripheral surface of intermediate oxide layer 6 and top layer silicon 5 center pit, top layer silicon 5 deposit the end face that the end face of high-reflecting film I 9 side and glass fixed pole 3 deposit high-reflecting film II 12 side and form closed cavity one; The inner peripheral surface of silicon sleeve pipe 4 center pit, glass fixed pole 3 deposit anti-reflection film I 8 side end face, with collimator and extender optical fiber 2 upper surface form confined space two; Region between high-reflecting film I 9 and high-reflecting film II 12 forms F-P optical interference chamber.
Described anti-reflection film constituent material is SiO
2/ Ta
2o
5composite dielectric film;
Described high-reflecting film constituent material is SiO
2/ Ta
2o
5composite dielectric film;
Wherein, the high-reflecting film on SOI strain beam bottom silicon 7 also can adopt golden reflectance coating; When the high-reflecting film 9 on bottom silicon 7 adopts golden reflectance coating, bottom silicon 7 can not deposit anti-reflection film.
Principle of work:
Fiber F-P strainometer utilizes Fabry-Perot (Fabry-Perot, be called for short F-P) principle of interference: when coherent light beam incides F-P strain sensitive MEMS chip along collimator and extender optical fiber, between the high-reflecting film of the high-reflecting film in glass fixed pole one side end face and SOI strain beam bottom silicon one side end face, multiple reflections forms multiple-beam interference, and Bing Yanyuan road turns back to collimator and extender optical fiber.The interference output signal of collimator and extender optical fiber is turned back to relevant to the length of the microcavity between the high-reflecting film of glass fixed pole one side end face and the high-reflecting film of SOI strain beam bottom silicon one side end face along former road.Under the effect of external strain, the length of the microcavity between the high-reflecting film of glass fixed pole one side end face and the high-reflecting film of SOI strain beam bottom silicon one side end face changes, make wavelength or the corresponding change of phase place of the interference output signal turning back to collimator and extender optical fiber, the external stress strain that can realize thus acting on F-P fiber optic strain gage is accurately measured.
Based on a forming method for the fiber F-P strainometer of MEMS technology, the concrete steps of described method are as follows:
(1) utilize Deep RIE technique to etch after carrying out photoetching treatment in the top layer silicon of soi wafer, form circular hole in the axis of top layer silicon; Etching depth is the thickness of top layer silicon; As shown in Figure 3 a and Figure 3 b shows;
(2) utilize wet etching or dry etching to be removed by the intermediate oxide layer that soi wafer exposes, form circular hole in the axis of intermediate oxide layer; As shown in Figure 3 c;
(3) in left end face deposition high-reflecting film (reflectivity is higher than 95%) of bottom silicon; Graphical treatment is carried out to described high-reflecting film; Obtain SOI strain beam; As shown in Figure 3 d;
(4) in its right end face deposition high-reflecting film (reflectivity 95 ~ 96%) of glass fixed pole; Graphical treatment is carried out to described high-reflecting film; As shown in Figure 3 e;
(5) the glass fixed pole that the soi wafer obtained step (1) ~ (3) and step (4) obtain carries out silicon-glass anodic bonding, and bonding face is the left end face of top layer silicon in soi wafer and its right end face of glass fixed pole; As illustrated in figure 3f;
(7) left end face of glass fixed pole deposits anti-reflection film after bonding, and carries out graphical treatment to described anti-reflection film; As shown in figure 3g;
(8) two upper surfaces throwing silicon chips after oxidation carry out photoetching, erode the oxide layer in litho pattern; Subsequently using oxide layer and photoresist as mask, adopt Deep RIE technique to etch, the axis on two throwing silicon chip forms circular hole, obtains round-meshed silicon sleeve pipe; Described Circularhole diameter is greater than the diameter of collimator and extender optical fiber; As illustrated in figure 3h;
(9) silicon sleeve pipe step (8) obtained and the left end face of glass fixed pole carry out silicon-glass anodic bonding, and bonding face is the left end face of glass fixed pole and its right end face of silicon sleeve pipe; Subsequently, successively at its right end face deposition anti-reflection film and the passivation layer of SOI strain beam bottom silicon, and graphical treatment is carried out to anti-reflection film and passivation layer, obtain F-P strain sensitive MEMS chip; As shown in Fig. 3 i and Fig. 3 j;
(10) collimator and extender optical fiber is fixed in the circular hole of silicon sleeve pipe in F-P strain sensitive MEMS chip by solder, obtains fiber F-P strainometer of the present invention.As shown in Figure 1;
Wherein, described high-reflecting film graphical treatment adopts Lift-off technique;
Described anti-reflection film graphical treatment adopts Lift-off technique.
The fiber F-P strainometer based on MEMS technology that method makes according to system of the present invention, the free spectrum width FSR in Fabry-Perot (F-P) chamber is 19.8nm, as shown in fig. 4 a; The three dB bandwidth FWHM of signal spectrum is 0.35nm, as shown in Figure 4 b; The optics fineness factor (ratio of free spectrum width FSR and three dB bandwidth FWHM) calculated reaches 56.6, far away higher than the optics fineness factor (be usually less than 10, typical light spectrogram as shown in Figure 5) of existing F-P strainometer.
The fiber F-P strainometer based on MEMS technology that method makes according to system of the present invention adopts wavelength signals demodulation mode can reach the Wavelength demodulation resolution of 0.2pm, wavelength variable quantity corresponding under 200 μ ε effects of strain is 2.1nm, strain resolution reaches 0.019 μ ε, the linearity is better than 0.9998, as shown in Figure 6.Meanwhile, owing to adopting wavelength signals demodulation mode, so strain measurement precision is not by the impact that bending loss of optical fiber and light source power fluctuate; And multiple fiber F-P strainometer based on MEMS technology can be concatenated on a core single-mode fiber by wavelength-division multiplex+time division multiplex by WDM, as shown in Figure 7.Optical Fiber Transmission distance can reach more than 20 kilometers.
The present invention includes but be not limited to above embodiment, every any equivalent replacement of carrying out under the principle of spirit of the present invention or local improvement, all will be considered as within protection scope of the present invention.
Claims (6)
1. based on a fiber F-P strainometer for MEMS technology, it is characterized in that: described fiber F-P strainometer mainly comprises F-P strain sensitive MEMS chip (1) and collimator and extender optical fiber (2);
Wherein, described F-P strain sensitive MEMS chip (1) is made up of SOI strain beam, glass fixed pole (3) and silicon sleeve pipe (4);
Described SOI strain beam comprises top layer silicon (5), intermediate oxide layer (6) and bottom silicon (7); Wherein, the end face of bottom silicon (7) side deposits anti-reflection film I (8) and passivation layer (10), and the end face of opposite side deposits high-reflecting film I (9); Intermediate oxide layer (6) and top layer silicon (5) are all processed with center pit, and described center pit is coaxial, and aperture just as;
The end face of described glass fixed pole (3) side deposits anti-reflection film I (11), and the end face of opposite side deposits high-reflecting film II (12);
Described silicon sleeve pipe (4) is processed with center pit;
The upper end of described collimator and extender optical fiber (2) is provided with GRIN Lens or equivalent optics; The outgoing parallel beam diameter of described collimator and extender optical fiber (2) is greater than fibre core diameter;
Integrated connection closes:
Described SOI strain beam is fixed on glass fixed pole (3) by silicon-glass anodic bonding, and bonding face top layer silicon (5) deposits the end face that the end face of high-reflecting film I (9) side and glass fixed pole (3) deposit high-reflecting film II (12) side; Glass fixed pole (3) is fixed on silicon sleeve pipe (4) by silicon-glass anodic bonding, and bonding face is that glass fixed pole (3) deposits the end face of anti-reflection film I (8) side and the end face of silicon sleeve pipe (4) side; Collimator and extender optical fiber (2) is welded on by solder in the center pit of silicon sleeve pipe (4); Wherein, the inner peripheral surface of intermediate oxide layer (6) and top layer silicon (5) center pit, top layer silicon (5) deposit the end face that the end face of high-reflecting film I (9) side and glass fixed pole (3) deposit high-reflecting film II (12) side and form closed cavity one; The inner peripheral surface of silicon sleeve pipe (4) center pit, glass fixed pole (3) deposit the end face of anti-reflection film I (8) side and collimator and extender optical fiber (2) upper surface forms confined space two; Region between high-reflecting film I (9) and high-reflecting film II (12) forms F-P optical interference chamber; The central point of described anti-reflection film I (8), anti-reflection film I (11), high-reflecting film I (9) and high-reflecting film II (12) is positioned on the axis of top layer silicon (5) center pit; And the area of anti-reflection film I (8), anti-reflection film I (11), high-reflecting film I (9) and high-reflecting film II (12) is all greater than the outgoing beam area of collimator and extender optical fiber (2).
2. a kind of fiber F-P strainometer based on MEMS technology according to claim 1, is characterized in that: the constituent material of described anti-reflection film I (8) and anti-reflection film I (11) is SiO
2/ Ta
2o
5composite dielectric film, SiO
2/ TiO
2composite dielectric film and SiO
2/ Si
3n
4one in composite dielectric film.
3. a kind of fiber F-P strainometer based on MEMS technology according to claim 1, is characterized in that: described high-reflecting film I (9) is SiO
2/ Ta
2o
5composite dielectric film, SiO
2/ TiO
2composite dielectric film, SiO
2/ Si
3n
4one in composite dielectric film and golden reflectance coating; Described high-reflecting film II (12) is SiO
2/ Ta
2o
5composite dielectric film, SiO
2/ TiO
2composite dielectric film and SiO
2/ Si
3n
4one in composite dielectric film.
4. a kind of microencapsulated F-P pressure transducer based on MEMS technology according to claim 2, it is characterized in that: when described high-reflecting film I (9) is for golden reflectance coating, the opposite side end face of bottom silicon (7) does not deposit anti-reflection film I (8) and Direct precipitation gold film as passivation layer.
5., as claimed in claim 1 based on a preparation method for the fiber F-P strainometer of MEMS technology, it is characterized in that: described method step is as follows:
(1) utilize Deep RIE technique to etch after carrying out photoetching treatment in the top layer silicon of soi wafer, form center pit in the axis of top layer silicon; Etching depth is the thickness of top layer silicon;
(2) utilize wet etching or dry etching to be removed by the intermediate oxide layer that soi wafer exposes, form center pit in the axis of intermediate oxide layer;
(3) the end face deposition high-reflecting film in bottom silicon side; Graphical treatment is carried out to described high-reflecting film; Obtain SOI strain beam;
(4) the end face deposition high-reflecting film in glass fixed pole side; Graphical treatment is carried out to described high-reflecting film;
(5) the glass fixed pole that the soi wafer obtained step (1) ~ (3) and step (4) obtain carries out silicon-glass anodic bonding, for top layer silicon in soi wafer deposits the end face that the end face of high-reflecting film side and glass fixed pole deposit high-reflecting film side;
(7) glass fixed pole does not deposit anti-reflection film with the end face of soi wafer bonding side after bonding, and carries out graphical treatment to described anti-reflection film;
(8) two upper surfaces throwing silicon chips after oxidation carry out photoetching, erode the oxide layer in litho pattern; Subsequently using oxide layer and photoresist as mask, adopt Deep RIE technique to etch, the axis on two throwing silicon chip forms circular hole, obtains round-meshed silicon sleeve pipe; Described Circularhole diameter is greater than the diameter of collimator and extender optical fiber;
(9) silicon sleeve pipe step (8) obtained and glass fixed pole carry out silicon-glass anodic bonding, and bonding face is that glass fixed pole deposits the end face of anti-reflection film side and the end face of silicon sleeve pipe side; Subsequently, successively at opposite side end face deposition anti-reflection film and the passivation layer of SOI strain beam bottom silicon, and graphical treatment is carried out to anti-reflection film and passivation layer, obtain F-P strain sensitive MEMS chip;
(10) collimator and extender optical fiber is fixed in the circular hole of silicon sleeve pipe in F-P strain sensitive MEMS chip by solder, obtains described fiber F-P strainometer.
6. the preparation method of a kind of fiber F-P strainometer based on MEMS technology according to claim 5, is characterized in that: described graphical treatment corrodes high-reflecting film technique or Lift-off technique after adopting photoetching again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410728295.4A CN104501729B (en) | 2014-12-04 | 2014-12-04 | A kind of fiber F-P strain gauge and forming method based on MEMS technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410728295.4A CN104501729B (en) | 2014-12-04 | 2014-12-04 | A kind of fiber F-P strain gauge and forming method based on MEMS technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104501729A true CN104501729A (en) | 2015-04-08 |
| CN104501729B CN104501729B (en) | 2018-06-19 |
Family
ID=52943155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410728295.4A Active CN104501729B (en) | 2014-12-04 | 2014-12-04 | A kind of fiber F-P strain gauge and forming method based on MEMS technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104501729B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105371979A (en) * | 2015-05-25 | 2016-03-02 | 赵瑞申 | Optical fiber temperature sensor chip based on MEMS technology |
| CN108955543A (en) * | 2018-09-10 | 2018-12-07 | 中国计量大学 | F-P micro-displacement measuring system linearity comparison device and method based on cantilever beam strain |
| CN109141271A (en) * | 2018-10-22 | 2019-01-04 | 中国地震局地壳应力研究所 | Multi-point type optical fiber grating bottom hole strain gauge |
| CN112513691A (en) * | 2018-07-30 | 2021-03-16 | ams传感器新加坡私人有限公司 | Low height optoelectronic module and package |
| CN112551482A (en) * | 2020-12-10 | 2021-03-26 | 电子科技大学 | Fine control method for free spectrum width of micro rod cavity |
| CN115728512A (en) * | 2021-08-25 | 2023-03-03 | 上海拜安传感技术有限公司 | Optical fiber acceleration sensor and forming method thereof |
| CN115854889A (en) * | 2023-03-08 | 2023-03-28 | 上海拜安传感技术有限公司 | Contact type displacement measuring device |
| CN116164781A (en) * | 2023-04-21 | 2023-05-26 | 西北工业大学 | MEMS sensor based on optical fiber F-P cavity and packaging method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2811965Y (en) * | 2005-04-15 | 2006-08-30 | 南京师范大学 | Optical fiber MEMS pressure sensor packaging structure |
| CN103542926A (en) * | 2013-10-09 | 2014-01-29 | 中国船舶重工集团公司第七一五研究所 | Optical-fiber micro-electro-mechanical hydrophone and production method thereof |
| CN104596435A (en) * | 2014-12-04 | 2015-05-06 | 中国科学院上海微系统与信息技术研究所 | MEMS process based cavity length adjustable optical fiber F-P strain gauge and forming method |
-
2014
- 2014-12-04 CN CN201410728295.4A patent/CN104501729B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2811965Y (en) * | 2005-04-15 | 2006-08-30 | 南京师范大学 | Optical fiber MEMS pressure sensor packaging structure |
| CN103542926A (en) * | 2013-10-09 | 2014-01-29 | 中国船舶重工集团公司第七一五研究所 | Optical-fiber micro-electro-mechanical hydrophone and production method thereof |
| CN104596435A (en) * | 2014-12-04 | 2015-05-06 | 中国科学院上海微系统与信息技术研究所 | MEMS process based cavity length adjustable optical fiber F-P strain gauge and forming method |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105371979A (en) * | 2015-05-25 | 2016-03-02 | 赵瑞申 | Optical fiber temperature sensor chip based on MEMS technology |
| CN112513691A (en) * | 2018-07-30 | 2021-03-16 | ams传感器新加坡私人有限公司 | Low height optoelectronic module and package |
| US12037238B2 (en) | 2018-07-30 | 2024-07-16 | Ams Sensors Singapore Pte. Ltd. | Low-height optoelectronic modules and packages |
| CN108955543B (en) * | 2018-09-10 | 2023-08-18 | 中国计量大学 | Device and method for comparing linearity of F-P micro-displacement measurement system based on cantilever beam strain |
| CN108955543A (en) * | 2018-09-10 | 2018-12-07 | 中国计量大学 | F-P micro-displacement measuring system linearity comparison device and method based on cantilever beam strain |
| CN109141271A (en) * | 2018-10-22 | 2019-01-04 | 中国地震局地壳应力研究所 | Multi-point type optical fiber grating bottom hole strain gauge |
| CN109141271B (en) * | 2018-10-22 | 2023-08-15 | 应急管理部国家自然灾害防治研究院 | Multi-point optical fiber grating hole bottom strain gauge |
| CN112551482A (en) * | 2020-12-10 | 2021-03-26 | 电子科技大学 | Fine control method for free spectrum width of micro rod cavity |
| CN112551482B (en) * | 2020-12-10 | 2023-04-18 | 电子科技大学 | Fine control method for free spectrum width of micro rod cavity |
| CN115728512A (en) * | 2021-08-25 | 2023-03-03 | 上海拜安传感技术有限公司 | Optical fiber acceleration sensor and forming method thereof |
| CN115728512B (en) * | 2021-08-25 | 2024-02-27 | 上海拜安传感技术有限公司 | Optical fiber acceleration sensor and method for forming optical fiber acceleration sensor |
| CN115854889A (en) * | 2023-03-08 | 2023-03-28 | 上海拜安传感技术有限公司 | Contact type displacement measuring device |
| CN116164781B (en) * | 2023-04-21 | 2023-07-07 | 西北工业大学 | MEMS sensor based on optical fiber F-P cavity and packaging method thereof |
| CN116164781A (en) * | 2023-04-21 | 2023-05-26 | 西北工业大学 | MEMS sensor based on optical fiber F-P cavity and packaging method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104501729B (en) | 2018-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104501729B (en) | A kind of fiber F-P strain gauge and forming method based on MEMS technology | |
| CN104596435B (en) | A kind of long adjustable optic fibre F P strain gauges of chamber based on MEMS technology and forming method | |
| CN104502016B (en) | A kind of chamber based on MEMS technology adjustable F P pressure sensors long and forming method | |
| CN104502005B (en) | A kind of F P pressure sensors and forming method based on MEMS technology | |
| CN104596685B (en) | MEMS process based miniature packaged F-P pressure sensor and forming method | |
| US8253945B2 (en) | Optical sensor | |
| CN106052727B (en) | Sensor device based on optical fiber miniature Fabry-Perot cavity | |
| CN106052912A (en) | Optical fiber stress sensing device based on Fabry-Perot microcavity structure | |
| CN105043588A (en) | High-temperature Fabry-Perot (FP) composite micro/nano fiber temperature and pressure sensor | |
| CN108845387B (en) | Wedge-shaped micro-porous fiber grating capable of simultaneously measuring temperature, salinity and pressure of seawater | |
| CN101424697A (en) | Optical fiber F-P acceleration and pressure sensor and its manufacturing method | |
| CN105022004A (en) | Waveguide magnetic field/current sensor based on surface plasmons and device | |
| CN107861192A (en) | Cone is drawn to combine the method that chemical attack prepares optical fiber F P sensors based on optical fiber | |
| CN113295193B (en) | Manufacturing method of single optical fiber cascading type temperature-depth-salinity sensor for deep sea surveying | |
| CN111487000A (en) | Vector stress meter based on micro-nano multi-core special optical fiber | |
| CN102564505A (en) | Hot-wire type flow sensor based on fiber grating | |
| CN105387968A (en) | Optical fiber cladding surface Bragg grating temperature self-compensating pressure sensor | |
| CN103697921A (en) | Optical fiber sensing head and optical fiber sensing system and method for measuring strain, stress and pressure based on sensing head | |
| CN109655176B (en) | High-precision temperature probe based on cavity filling type microstructure optical fiber interferometer | |
| CN211825681U (en) | Hydrogen sensor based on FBG is write in flat single mode fiber of toper | |
| CN205941335U (en) | High sensitivity's optic fibre EFPI sensor | |
| WO2019222932A1 (en) | Fiber flex sensor and manufacturing method for fiber flex sensor | |
| CN205861077U (en) | A kind of sensor device based on optical fiber miniature Fabry Perot chamber | |
| CN113267206A (en) | Low-cost repeatedly-producible optical fiber non-closed Fabry-Perot sensor | |
| CN109631789B (en) | High-sensitivity Fabry-Perot sensor with temperature self-compensation effect |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210510 Address after: 200120 building 4, 150 Cailun Road, Zhangjiang Town, Pudong New Area, Shanghai Patentee after: SHANGHAI B&A SENSOR Co.,Ltd. Address before: 200050 No. 865, Changning Road, Shanghai, Changning District Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
|
| TR01 | Transfer of patent right |