CN104241351A - Gallium nitride heterojunction field-effect tube (GaN HFET) provided with bulk recombination field plate structure - Google Patents
Gallium nitride heterojunction field-effect tube (GaN HFET) provided with bulk recombination field plate structure Download PDFInfo
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- CN104241351A CN104241351A CN201410454183.4A CN201410454183A CN104241351A CN 104241351 A CN104241351 A CN 104241351A CN 201410454183 A CN201410454183 A CN 201410454183A CN 104241351 A CN104241351 A CN 104241351A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 92
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 230000005669 field effect Effects 0.000 title claims abstract description 22
- 230000006798 recombination Effects 0.000 title abstract 6
- 238000005215 recombination Methods 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 23
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 22
- 150000004767 nitrides Chemical class 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 108091006146 Channels Proteins 0.000 description 31
- 230000005684 electric field Effects 0.000 description 19
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 230000005533 two-dimensional electron gas Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention relates to the semiconductor technology, and provides a gallium nitride heterojunction field-effect tube (GaN HFET) provided with a bulk recombination field plate structure. The GaN HFET provided with the bulk recombination field plate structure solves the problem that an existing GaN HFET can not withstand high voltage. According to the technical scheme, compared with an existing common GaN HFET, the GaN HFET is provided with the bulk recombination field plate structure, and the bulk recombination field plate structure is composed of an electrode and an insulating medium layer. The GaN HFET provided with the bulk recombination field plate structure has the advantages of enhancing the voltage withstanding performance and being suitable for the GaN heterojunction field effect transistors.
Description
Technical field
The present invention relates to semiconductor technology, particularly gallium nitride (GaN) radical heterojunction field effect transistor strain n channel metal oxide semiconductor field effect transistor (NMOSFET).
Background technology
Gallium nitride (GaN) radical heterojunction field effect transistor (HFET) has that energy gap is large, critical breakdown electric field is high, electron saturation velocities is high, the excellent specific property such as good heat conductivity, radioresistance and good chemical stability, simultaneously gallium nitride material can form the two-dimensional electron gas heterojunction raceway groove with high concentration and high mobility with the material such as aluminum gallium nitride (AlGaN), therefore being specially adapted to high pressure, high-power and high temperature application, is one of transistor of applied power electronics most potentiality.
Fig. 1 is prior art common GaN HFET (gallium nitride radical heterojunction field effect transistor) structural representation, mainly comprise substrate 107, gallium nitride (GaN) resilient coating 106, gallium nitride (GaN) channel layer 105, the source electrode 101 that aluminum gallium nitride (AlGaN) barrier layer 104 and aluminum gallium nitride (AlGaN) barrier layer 104 are formed, drain electrode 102 and grid 103, wherein nitride buffer layer 106 is arranged on above substrate 107, gallium nitride channel layer 105 is arranged on above nitride buffer layer 106, aluminum gallium nitride barrier layer 104 is arranged on above gallium nitride channel layer 105, source electrode 101 and drain electrode 102 form ohmic contact with aluminum gallium nitride (AlGaN) barrier layer 104, grid 103 and aluminum gallium nitride (AlGaN) barrier layer 104 form Schottky contacts.But for common GaN HFET, when device bears withstand voltage, because raceway groove two-dimensional electron gas can not exhaust completely between grid 103 and drain electrode 102, make raceway groove electric field mainly concentrate on grid 103 edge, cause device just breakdown under lower drain voltage.Drain electrode 102 can be arrived through GaN resilient coating from source electrode injected electrons simultaneously, form leak channel, excessive resilient coating leakage current can cause device to puncture in advance equally, cannot give full play to the withstand voltage advantage of height of GaN material, thus the application of restriction GaN HFET in high pressure.
In order to make Electric Field Distribution between grid 103 and drain electrode 102 more even in prior art, suppressing resilient coating leakage current, improving device electric breakdown strength, usually adopt with the following method:
Use surface field plate technique [D.Vislalli et al., " Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs ", IEEE Trans.Electron Devices, Vol.57, No.12, p.3333-3339 (3060)].Field plate structure can exhaust the raceway groove two-dimensional electron gas under it effectively, the Two-dimensional electron depleted region between extended grid and drain electrode, makes the Electric Field Distribution between grid leak more even, thus reaches the object improving puncture voltage.But field plate structure still cannot exhaust the raceway groove two-dimensional electron gas between grid and drain electrode completely, resilient coating leakage current cannot be suppressed simultaneously, the withstand voltage advantage of GaN material can not be given full play to.
The impurity such as carbon, iron [Eldad Bahat-Treidel et al. is mixed in resilient coating, " AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1kV and Low RON × A ", Trans.on Electron Devices, Vol.57, No.11, p.3050-3058 (3060)].The impurity such as carbon, iron can introduce deep energy level electron trap in GaN resilient coating, captures from source electrode injected electrons, increases resilient coating resistance, is contributed to exhausting two-dimensional electron gas in raceway groove simultaneously, make device channel Electric Field Distribution more even by the trap of electrons occupy.But this technology can not exhaust the two-dimensional electron gas in raceway groove completely, the withstand voltage advantage of GaN material cannot be given full play to, the Deep Level Traps that simultaneously impurity such as carbon, iron is introduced can cause that such as conducting resistance increases, output current declines, degradation negative effect under current collapse effect and reaction speed.
The way (US 2006/0170003 A1) of the in-vivo metal electrode be connected with back electrode is directly introduced in p-type Si substrate.Though this technology is unrealized temporarily at present, but from theory analysis, metal electrode and semiconductor directly contact and can not reduce leakage current, on the contrary because of its good conductivity, more easily form resilient coating electric leakage raceway groove, thus reduce the puncture voltage of device.In addition, close together between this internal electrode and drain electrode, centre only also exists PN junction structure, and its reverse leakage is very large, if this internal electrode is connected with source electrode or grid, the voltage endurance capability of so whole device is only equivalent to common GaN PN junction.Except described in above 2 on except the impact of puncture voltage, this structure cannot allow the N-type channel doping of higher concentration to reduce conducting resistance, is therefore difficult to the figure of merit (FOM) of boost device.
Summary of the invention
The object of the invention is to overcome the withstand voltage not high shortcoming of current gallium nitride radical heterojunction field effect transistor, a kind of gallium nitride radical heterojunction field effect pipe with composite field plate structure in body is provided.
The present invention solves its technical problem, the technical scheme adopted is, there is the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body, comprise substrate 107, nitride buffer layer 106, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source electrode 101, drain electrode 102 and grid 103, described nitride buffer layer 106 is arranged on above substrate 107, it is characterized in that, also comprise composite field plate structure in body, in described body, composite field plate structure is made up of electrode 208 and insulating medium layer 209, the horizontal level of described electrode 208 is between grid 103 and drain electrode 102, the lower surface of electrode 208 contacts with device lower surface, insulating medium layer 209 covers electrode 208 and is positioned at substrate 107, in nitride buffer layer 106 and gallium nitride channel layer 105 other on the surface, in body composite field plate structure vertical direction on thickness be less than the distance of upper surface to substrate 107 lower surface of gallium nitride channel layer 105.
Concrete, described electrode 208 is made up of metal or high doping semiconductor material.
Further, described insulating medium layer 209 is made up of silicon dioxide and/or aluminium oxide and/or silicon nitride and/or hafnium oxide.
Concrete, in described body, composite field plate structure width is in the horizontal direction less than the distance between grid 103 to drain electrode 102.
Further, the electricity connected mode of described electrode 208 is for being biased separately or being connected with source electrode 101 or being connected with grid 103 or being connected with drain electrode 102.
Concrete, described gallium nitride channel layer 105 is N-type doping, and doping content scope is 1 × 10
14cm
-3to 1 × 10
20cm
-3.
Further, described nitride buffer layer 106 has N-type doping content at insulating medium layer 209 near the part of drain electrode 102, and its concentration range is 1 × 10
14cm
-3to 1 × 10
20cm
-3.
The invention has the beneficial effects as follows, by the above-mentioned gallium nitride radical heterojunction field effect pipe with composite field plate structure in body, can find out, it is by introducing insulating medium layer, can blocking buffer layer leak channel, reduce OFF state drain current, then the possibility that device occurs to puncture in advance is reduced, and because the breakdown electric field of insulating medium layer is far above semi-conducting material, a part can be born withstand voltage, the introducing of this insulating medium layer, the Electric Field Distribution between grid and drain electrode can also be changed, make electric field more even, increase withstand voltage, and composite field plate structure in the body increased, significantly can modulate electric field distribution in channel, the effect of this Electric Field Modulated effect depends on structural parameters and the location parameter of field plate itself, than before surface field plate structure, more can depletion drift region electron concentration, electric field can be raised in consequent space charge region, increase withstand voltage, and this relation that can change between voltage endurance capability and conducting resistance, namely conducting resistance is reduced by increasing raceway groove N-type doping content, keep even improving voltage endurance capability simultaneously, also the figure of merit (FOM) of existing device is namely improved.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing GaN HFET device;
Fig. 2 is the structural representation with the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body of the present invention;
Fig. 3 is the Relationship Comparison figure of device drain current and drain bias under grid is in OFF state situation in device and Fig. 2 in Fig. 1;
Fig. 4 be in Fig. 1 in device and Fig. 2 device under grid is in OFF state situation along the comparison diagram of the Electric Field Distribution of raceway groove;
Wherein, 101 is source electrode, and 102 is drain electrode, and 103 is grid, and 104 is aluminum gallium nitride barrier layer, and 105 is gallium nitride channel layer, and 106 is nitride buffer layer, and 107 is substrate, and 208 is electrode, and 209 is insulating medium layer.
Embodiment
Below in conjunction with drawings and Examples, describe technical scheme of the present invention in detail.
The structural representation with the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body of the present invention as shown in Figure 2, it comprises substrate 107, nitride buffer layer 106, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source electrode 101, drain electrode 102, composite field plate structure in grid 103 and body, wherein nitride buffer layer 106 is arranged on above substrate 107, gallium nitride channel layer 105 is arranged on above nitride buffer layer 106, aluminum gallium nitride barrier layer 104 is arranged on above gallium nitride channel layer 105, source electrode 101 and drain electrode 102 form ohmic contact with aluminum gallium nitride (AlGaN) barrier layer 104, grid 103 and aluminum gallium nitride (AlGaN) barrier layer 104 form Schottky contacts, in body, composite field plate structure is made up of electrode 208 and insulating medium layer 209, the horizontal level of electrode 208 is between grid 103 and drain electrode 102, the lower surface of electrode 208 contacts with device lower surface, insulating medium layer 209 covers electrode 208 and is positioned at substrate 107, in nitride buffer layer 106 and gallium nitride channel layer 105 other on the surface, in body composite field plate structure vertical direction on thickness be less than the distance of upper surface to substrate 107 lower surface of gallium nitride channel layer 105.
Embodiment
See Fig. 1, for the structural representation of existing GaN HFET device, comprise substrate 107, gallium nitride (GaN) resilient coating 106, gallium nitride (GaN) channel layer 105, the source electrode 101 that aluminum gallium nitride (AlGaN) barrier layer 104 and aluminum gallium nitride (AlGaN) barrier layer 104 are formed, drain electrode 102 and grid 103, wherein nitride buffer layer 106 is arranged on above substrate 107, gallium nitride channel layer 105 is arranged on above nitride buffer layer 106, aluminum gallium nitride barrier layer 104 is arranged on above gallium nitride channel layer 105, source electrode 101 and drain electrode 102 form ohmic contact with aluminum gallium nitride (AlGaN) barrier layer 104, grid 103 and aluminum gallium nitride (AlGaN) barrier layer 104 form Schottky contacts.
See Fig. 2, for the structural representation with the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body of the present invention, it comprises substrate 107, nitride buffer layer 106, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source electrode 101, drain electrode 102, composite field plate structure in grid 103 and body, wherein nitride buffer layer 106 is arranged on above substrate 107, gallium nitride channel layer 105 is arranged on above nitride buffer layer 106, aluminum gallium nitride barrier layer 104 is arranged on above gallium nitride channel layer 105, source electrode 101 and drain electrode 102 form ohmic contact with aluminum gallium nitride (AlGaN) barrier layer 104, grid 103 and aluminum gallium nitride (AlGaN) barrier layer 104 form Schottky contacts, in body, composite field plate structure is made up of electrode 208 and insulating medium layer 209, the horizontal level of electrode 208 is between grid 103 and drain electrode 102, the lower surface of electrode 208 contacts with device lower surface, insulating medium layer 209 covers electrode 208 and is positioned at substrate 107, in nitride buffer layer 106 and gallium nitride channel layer 105 other on the surface, in body composite field plate structure vertical direction on thickness be less than the distance of upper surface to substrate 107 lower surface of gallium nitride channel layer 105.
Wherein, electrode 208 can be made up of metal or high doping semiconductor material, and insulating medium layer 209 can be made up of silicon dioxide and/or aluminium oxide and/or silicon nitride and/or hafnium oxide etc.In body, composite field plate structure width is in the horizontal direction less than the distance between grid 103 to drain electrode 102.The electricity connected mode of electrode 208 is for being biased separately or being connected with source electrode 101 or being connected with grid 103 or being connected with drain electrode 102.
Here, gallium nitride channel layer 105 can not artificially adulterate, and also can artificially N-type adulterate, if doping, then doping content scope is 1 × 10
14cm
-3to 1 × 10
20cm
-3.Nitride buffer layer 106 can be N-type doping content in the part of the close drain electrode 102 of insulating medium layer 209, and its concentration range is 1 × 10
14cm
-3to 1 × 10
20cm
-3.
This example with the GaN HFET with composite field plate in body (being made up of electrode 208 and insulating medium layer 209) shown in Fig. 2 under channel layer 205 adulterates and undopes two kinds of situations with the contrast of existing common GaN HEMT (Fig. 1); Device architecture parameter is see table 1.
Table 1 device simulation structural parameters
See Fig. 3, for device in device in Fig. 1 and Fig. 2 drain under grid is in OFF state situation 102 electric currents with drain electrode 102 bias voltages Relationship Comparison figure; Device electric breakdown strength is defined as drain electrode 102 electric current when reaching 1mA/mm, the bias voltages that drain electrode 102 applies.Result is two Dimension Numerical Value emulation gained.In Fig. 3, dash line drains under representing the cut-off state of common GaN HEMT device 102 electric currents; Chain-dotted line is that its raceway groove does not adulterate by 202 electric currents that drain under the cut-off state of the GaN HEMT of composite field plate in the belt body in this example; Solid line represents that wherein raceway groove has N-type doping content 1 × 10 by 202 electric currents that drain under the cut-off state of the GaN HEMT of composite field plate in the belt body in this example
17cm
-3.As seen from the figure, in body, composite field plate can reduce the drain leakage current under device cut-off state greatly.In addition, when there being composite field plate in body, N-type doping being carried out to raceway groove, can further improve device withstand voltage ability, reducing conducting resistance simultaneously.
In order to verify that in the body that is made up of insulating medium layer 209 and electrode 208, composite field plate structure is on the impact of device electric breakdown strength further, the distribution in raceway groove electric field strength transversely direction in following three kinds of situations by two Dimension Numerical Value simulation study, see Fig. 4, for device in device in Fig. 1 and Fig. 2 under grid is in OFF state situation along the comparison diagram of the Electric Field Distribution of raceway groove, in belt body in composite field plate raceway groove non-impurity-doped (Fig. 4 chain lines), belt body composite field plate and raceway groove N-type doping 1 × 10
17cm
-3(in Fig. 4 solid line) and ordinary construction (Fig. 4 dashed lines).Two conclusions as can be drawn from Figure 4.One is the distribution that in body, composite field plate structure obviously changes raceway groove electric field.Specifically, near the field plate introduced, there is a peak electric field in raceway groove, reduced the electric field at grid 103 edge, made electric field distribution in channel more even, thus improve the voltage endurance capability of raceway groove.Two is when there being channel doping, and in body, composite field plate effectively can exhaust the impurity of channel region, and leaving space charged region is with lifting electric field strength, increase withstand voltage, what is more important, while increase is withstand voltage, because doping, makes device on-resistance reduce.Specifically, to the situation only having composite field plate in body, conducting resistance is 0.54m Ω cm
2; Having composite field plate in body and raceway groove has N-type doping content 1 × 10
17cm
-3under situation, conducting resistance is 0.46m Ω cm
2.
The above is only present pre-ferred embodiments, not does any pro forma restriction to the present invention, every according in technical spirit of the present invention to any simple modification, equivalent variations that above embodiment is done, all fall within protection scope of the present invention.
Claims (7)
1. there is the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body, comprise substrate 107, nitride buffer layer 106, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source electrode 101, drain electrode 102 and grid 103, described nitride buffer layer 106 is arranged on above substrate 107, it is characterized in that, also comprise composite field plate structure in body, in described body, composite field plate structure is made up of electrode 208 and insulating medium layer 209, the horizontal level of described electrode 208 is between grid 103 and drain electrode 102, the lower surface of electrode 208 contacts with device lower surface, insulating medium layer 209 covers electrode 208 and is positioned at substrate 107, in nitride buffer layer 106 and gallium nitride channel layer 105 other on the surface, in body composite field plate structure vertical direction on thickness be less than the distance of upper surface to substrate 107 lower surface of gallium nitride channel layer 105.
2. have the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body according to claim 1, it is characterized in that, described electrode 208 is made up of metal or high doping semiconductor material.
3. have the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body according to claim 1, it is characterized in that, described insulating medium layer 209 is made up of silicon dioxide and/or aluminium oxide and/or silicon nitride and/or hafnium oxide.
4. have the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body according to claim 1, it is characterized in that, in described body, composite field plate structure width is in the horizontal direction less than the distance between grid 103 to drain electrode 102.
5. there is the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body according to claim 1 or 2 or 3 or 4, it is characterized in that, the electricity connected mode of described electrode 208 is for being biased separately or being connected with source electrode 101 or being connected with grid 103 or being connected with drain electrode 102.
6. have the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body according to claim 1, it is characterized in that, described gallium nitride channel layer 105 is N-type doping, and doping content scope is 1 × 10
14cm
-3to 1 × 10
20cm
-3.
7. have the gallium nitride radical heterojunction field effect pipe of composite field plate structure in body according to claim 6, it is characterized in that, described nitride buffer layer 106 has N-type doping content at insulating medium layer 209 near the part of drain electrode 102, and its concentration range is 1 × 10
14cm
-3to 1 × 10
20cm
-3.
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| CN111129138A (en) * | 2018-11-01 | 2020-05-08 | 西安电子科技大学 | Gallium nitride enhanced vertical power transistor based on self-aligned field plate structure |
| CN111354789A (en) * | 2018-12-24 | 2020-06-30 | 苏州捷芯威半导体有限公司 | Semiconductor device and manufacturing method |
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| WO2024169875A1 (en) * | 2023-02-17 | 2024-08-22 | 华为技术有限公司 | Semiconductor device, manufacturing method for semiconductor device, and electronic apparatus |
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| US11508821B2 (en) | 2017-05-12 | 2022-11-22 | Analog Devices, Inc. | Gallium nitride device for high frequency and high power applications |
| US12009207B2 (en) | 2017-05-12 | 2024-06-11 | Analog Devices, Inc. | Gallium nitride device for high frequency and high power applications |
| US11355598B2 (en) | 2018-07-06 | 2022-06-07 | Analog Devices, Inc. | Field managed group III-V field effect device with epitaxial back-side field plate |
| CN111129138A (en) * | 2018-11-01 | 2020-05-08 | 西安电子科技大学 | Gallium nitride enhanced vertical power transistor based on self-aligned field plate structure |
| CN111129138B (en) * | 2018-11-01 | 2022-02-18 | 西安电子科技大学 | Gallium nitride enhanced vertical power transistor based on self-aligned field plate structure |
| CN111354789A (en) * | 2018-12-24 | 2020-06-30 | 苏州捷芯威半导体有限公司 | Semiconductor device and manufacturing method |
| CN111354789B (en) * | 2018-12-24 | 2023-11-07 | 苏州捷芯威半导体有限公司 | Semiconductor device and manufacturing method |
| WO2024169875A1 (en) * | 2023-02-17 | 2024-08-22 | 华为技术有限公司 | Semiconductor device, manufacturing method for semiconductor device, and electronic apparatus |
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