CN104218143A - BiAgSeTe-based thermoelectric material and preparation method thereof - Google Patents
BiAgSeTe-based thermoelectric material and preparation method thereof Download PDFInfo
- Publication number
- CN104218143A CN104218143A CN201410411877.XA CN201410411877A CN104218143A CN 104218143 A CN104218143 A CN 104218143A CN 201410411877 A CN201410411877 A CN 201410411877A CN 104218143 A CN104218143 A CN 104218143A
- Authority
- CN
- China
- Prior art keywords
- biagsete
- thermoelectric
- block
- thermoelectric material
- base thermoelectricity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 88
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000843 powder Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 10
- 230000005619 thermoelectricity Effects 0.000 claims description 32
- 238000005245 sintering Methods 0.000 claims description 26
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 21
- 230000014759 maintenance of location Effects 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 206010013786 Dry skin Diseases 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 238000001238 wet grinding Methods 0.000 claims description 3
- 238000005303 weighing Methods 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 abstract description 6
- 238000002844 melting Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 238000002490 spark plasma sintering Methods 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Powder Metallurgy (AREA)
Abstract
The invention relates to BiAgSeTe-based thermoelectric material and a preparation method thereof. According to the preparation method, BiAgSeTe-based high-performance thermoelectric blocks are prepared by a low-temperature solid melting technology and spark plasma sintering from single metal powders of Bi, Ag, Se and Te all 99.99% in purity. According to the scheme, the BiAgSeTe-based thermoelectric material and the preparation method thereof have the advantages such that the BiAgSeTe-based high-performance thermoelectric blocks of the thermoelectric material can be prepared conveniently and simply, a thermoelectric power factor of the thermoelectric material can be significantly increased by optimizing element ratio of the thermoelectric material and process parameters, thermoelectric property of the thermoelectric material is improved on the premise of barely increasing thermal conductivity. The BiAgSeTe-based thermoelectric material is thermoelectric conversion material of great potential.
Description
Technical field
The present invention is a kind of BiAgSeTe base thermoelectricity material and preparation method thereof, belongs to energy and material technical field.
Background technology
Along with the pursuit of the environmentally friendly regenerative resource of the mankind, semiconductor generating and refrigeration application research will make thermo-electric converting material micro element produce profound significance to entire society's resources conservation and environmental protection, meet human kind sustainable development strategy.No matter be thermoelectric power generation, or the application of thermoelectric cooling, all be unableing to do without high generating and refrigerating efficiency, the key factor that determines its efficiency is the thermoelectricity capability height of material.The performance of thermoelectric material generally represents (ZT=α by dimensionless thermoelectric figure of merit ZT
2σ T/ κ, wherein α, σ, κ, T represent respectively Seebeck coefficient, conductivity, thermal conductivity and the absolute temperature of material, wherein α
2σ is the power factor in thermoelectricity capability).Therefore good thermoelectric material should have high Seebeck coefficient and low resistivity, low thermal conductivity and high power factor.At present, the mode that improves conducting material thermoelectricity performance mainly contains doping vario-property, Composition Control, institutional framework control etc., in the situation that improving material power factor, does not relatively increase thermal conductivity, thereby improves the thermoelectricity capability of material.The polynary thermoelectric material of development of new and technique are synthetic is simultaneously also current thermoelectric material research emphasis.
Summary of the invention
Technical solution of the present invention be research Bi ?Te binary compound Bi
2te
3and on doping vario-property compound basis derivative multi-element compounds as proposing in thermoelectric material process, a kind of BiAgSeTe base thermoelectricity material and preparation method thereof is provided, BiAgSeTe base thermoelectricity material has no domestic and international relevant report, the cubic structure of BiAgSeTe base thermoelectricity material has determined that it has lower thermal conductivity, its electric property relative mistake is a little, by regulating different Se and Te atom ratio can effectively regulate the carrier concentration of this material, improve its electricity transmission performance, will be conducive to improve its thermoelectricity capability.In addition, by the control to this material synthesis technique, to optimizing the performance of material, also play very important effect.In BiAgSeTe base thermoelectricity material, the low reason of fusing point due to Bi, Se and Te metal, in building-up process, very easily generate second-phase, increase brilliant dielectric resistance, the thermoelectricity capability that is unfavorable for this material system improves, technical solution of the present invention mainly adopts process annealing to make the elements such as low-melting-point metal Bi, Se and Te admittedly molten, strict adjusting controlled Se, Te atomic ratio, then by low temperature melting in conjunction with discharge plasma sintering, when optimizing the material thermoelectric (al) power factor, relatively do not increase thermal conductivity, thereby reach the effect that improves this material system thermoelectricity capability.
The object of the invention is to be achieved through the following technical solutions:
Technical solution of the present invention has proposed a kind of BiAgSeTe base thermoelectricity material, and its feature exists: the chemical general formula of this material is: BiAgSe
1-xte
1+x, the span Wei of x ?0.05～0.05.
Technical solution of the present invention has also proposed a kind of method of preparing described BiAgSeTe base thermoelectricity material, it is characterized in that: the Bi that the purity of take is 99.99%, Ag, Se and Te simple substance powder are raw material, the proportioning of pressing chemical general formula weighs, with agate, grinding alms bowl mixes raw material, be pressed into block and put into vacuum drying chamber, baking temperature is 200 ℃, processing time is 48h, then after block Chan is broken, put into stainless steel jar mill, add absolute ethyl alcohol wet-milling 12 hours under 400rpm, the addition of absolute ethyl alcohol is 5～10 times of block volume, then the powder of milled is put into 60 ℃ of vacuum bellows inner dryings 24 hours, dried powder is put into graphite jig, by discharge plasma sintering, become block materials, in sintering process, programming rate is 80 ℃～150 ℃/min, sintering temperature is 450 ℃, pressure is 30Mpa～60Mpa, temperature retention time 3～6 minutes, can obtain BiAgSeTe base thermoelectricity material.
While pressing the proportioning raw materials weighing of chemical general formula, the value of x is 0,0.002,0.004,0.008,0.01,0.02,0.03,0.04 or 0.05.
Advantage of the present invention is: the BiAgSeTe base block thermoelectric material of preparing a kind of different Se, Te atom ratio that technical solution of the present invention can be accurate, succinct.Solve in thermoelectricity capability optimizing process the paradox that electric property and heat conveyance performance parameter change, the whole thermoelectricity capability that improves material.Pass through low temperature melting, accurately control the proportioning content of each element, make can regulate in discharge plasma sintering process at synthesizing block material Se, Te atomic ratio, regulation and control carrier concentration, improve the relative thermal conductivity that do not increase on the basis of electric property, improving the power factor of BiAgSeTe sill.
Accompanying drawing explanation
Fig. 1 is the XRD of the synthetic BiAgSeTe base thermoelectricity material block of technique in embodiment 1;
Fig. 2 is the SEM of the synthetic BiAgSeTe base thermoelectricity material block of technique in embodiment 1;
Embodiment
Below with reference to embodiment, technical solution of the present invention is made to say further detailed description:
Bi, the Ag that the purity of take is 99.99%, Se and Te simple substance powder are raw material, by chemical general formula BiAgSe
1-xte
1+xthe proportioning of (the span Wei of x ?0.05～0.05) weighs, as shown in table 1.
Table 1 BiAgSeTe base thermoelectricity material raw material components and proportioning
In table 1, each numeric item represents the embodiment of a BiAgSeTe base block thermoelectric material raw material components and proportioning.
The preparation process of BiAgSeTe base thermoelectricity material is as follows:
With agate, grinding alms bowl mixes raw material, be pressed into block and put into vacuum drying chamber, baking temperature is 200 ℃, processing time is 48h, then after block Chan is broken, put into stainless steel jar mill, add absolute ethyl alcohol wet-milling 12 hours under 400rpm, the addition of absolute ethyl alcohol is 5～10 times of block volume, then the powder of milled is put into 60 ℃ of vacuum bellows inner dryings 24 hours, dried powder is put into graphite jig, by discharge plasma sintering, become block materials, in sintering process, programming rate is 80 ℃～150 ℃/min, sintering temperature is 450 ℃, pressure is 30Mpa～60Mpa, temperature retention time 3～6 minutes, can obtain BiAgSeTe base thermoelectricity material.
It is as follows that in table 1, each embodiment is prepared into the part technological parameter of BiAgSeTe base thermoelectricity material:
Embodiment 1
The addition of absolute ethyl alcohol is 5 times of block volume, and dry powder is by discharge plasma sintering process, and programming rate is 80 ℃/min, pressure is 40Mpa, temperature retention time 6 minutes, the molecular formula obtaining is BiAgSeTe thermoelectric block body material, when 723K, power factor is 445 μ Wm
?1k
?2, thermal conductivity is 0.72Wm
?1k
?1.Fig. 1 is the XRD of the synthetic BiAgSeTe base thermoelectricity material block of technique in embodiment 1; Fig. 2 is the SEM of the synthetic BiAgSeTe base thermoelectricity material block of technique in embodiment 1;
Embodiment 2: the addition of absolute ethyl alcohol is block volume 6 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 100 ℃/min, pressure is 50Mpa, temperature retention time 5 minutes, can obtain molecular formula is BiAgSe
0.998te
1.002thermoelectric block body material.By test performance, its power factor when 723K is 457 μ Wm
-1k
-2, thermal conductivity is 0.74Wm
-1k
-1.
Embodiment 3: the addition of absolute ethyl alcohol is block volume 6 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 120 ℃/min, pressure is 60Mpa, temperature retention time 4 minutes, can obtain molecular formula is BiAgSe
0.996te
1.004thermoelectric block body material.By test performance, its power factor when 723K is 474 μ Wm
-1k
-2, thermal conductivity is 0.81Wm
-1k
-1.
Embodiment 4: the addition of absolute ethyl alcohol is block volume 6 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 150 ℃/min, pressure is 50Mpa, temperature retention time 3 minutes, can obtain molecular formula is BiAgSe
0.994te
1.006thermoelectric block body material.By test performance, its power factor when 723K is 488 μ Wm
?1k
?2, thermal conductivity is 0.82Wm
?1k
?1.
Embodiment 5: the addition of absolute ethyl alcohol is block volume 6 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 150 ℃/min, pressure is 60Mpa, temperature retention time 3 minutes,, can obtain molecular formula is BiAgSe
0.992te
1.008thermoelectric block body material.By test performance, its power factor when 723K is 491 μ Wm
?1k
?2, thermal conductivity is 0.84Wm
?1k
?1.
Embodiment 6: the addition of absolute ethyl alcohol is block volume 10 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 150 ℃/min, pressure is 50Mpa, temperature retention time 5 minutes,, can obtain molecular formula is BiAgSe
0.99te
1.01thermoelectric block body material.By test performance, its power factor when 723K is 529 μ Wm
?1k
?2, thermal conductivity is 0.90Wm
?1k
?1.
Embodiment 7: the addition of absolute ethyl alcohol is block volume 10 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 150 ℃/min, pressure is 50Mpa, temperature retention time 6 minutes, can obtain molecular formula is BiAgSe
0.98te
1.02thermoelectric block body material.By test performance, its power factor when 723K is 564 μ Wm
?1k
?2, thermal conductivity is 0.77Wm
?1k
?1.
Embodiment 8: the addition of absolute ethyl alcohol is block volume 10 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 150 ℃/min, pressure is 60Mpa, temperature retention time 5 minutes, can obtain molecular formula is BiAgSe
0.97te
1.03thermoelectric block body material.By test performance, its power factor when 723K is 596 μ Wm
?1k
?2, thermal conductivity is 0.71Wm
?1k
?1.
Embodiment 9: the addition of absolute ethyl alcohol is block volume 10 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 150 ℃/min, pressure is 60Mpa, temperature retention time 5 minutes, can obtain molecular formula is BiAgSe
0.96te
1.04thermoelectric block body material.By test performance, its power factor when 723K is 618 μ Wm
?1k
?2, thermal conductivity is 0.87Wm
?1k
?1.
Embodiment 10: the addition of absolute ethyl alcohol is block volume 10 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 120 ℃/min, pressure is 60Mpa, temperature retention time 5 minutes,, can obtain molecular formula is BiAgSe
0.95te
1.05thermoelectric block body material.By test performance, its power factor when 723K is 626 μ Wm
?1k
?2, thermal conductivity is 0.94Wm
?1k
?1.
Embodiment 11: the addition of absolute ethyl alcohol is block volume 10 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 150 ℃/min, pressure is 50Mpa, temperature retention time 5 minutes,, can obtain molecular formula is BiAgSe
1.01te
0.99thermoelectric block body material.By test performance, its power factor when 723K is 425 μ Wm
?1k
?2, thermal conductivity is 0.74Wm
?1k
?1.
Embodiment 12: the addition of absolute ethyl alcohol is block volume 10 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 150 ℃/min, pressure is 50Mpa, temperature retention time 5 minutes,, can obtain molecular formula is BiAgSe
1.02te
0.98thermoelectric block body material.By test performance, its power factor when 723K is 405 μ Wm
?1k
?2, thermal conductivity is 0.76Wm
?1k
?1.
Embodiment 13: the addition of absolute ethyl alcohol is block volume 10 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 150 ℃/min, pressure is 50Mpa, temperature retention time 5 minutes,, can obtain molecular formula is BiAgSe
1.03te
0.97thermoelectric block body material.By test performance, its power factor when 723K is 435 μ Wm
?1k
?2, thermal conductivity is 0.77Wm
?1k
?1.
Embodiment 14: the addition of absolute ethyl alcohol is block volume 10 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 120 ℃/min, pressure is 60Mpa, temperature retention time 4 minutes,, can obtain molecular formula is BiAgSe
1.04te
0.96thermoelectric block body material.By test performance, its power factor when 723K is 415 μ Wm
?1k
?2, thermal conductivity is 0.70Wm
?1k
?1.
Embodiment 15: the addition of absolute ethyl alcohol is block volume 10 times, dry powder becomes block materials by discharge plasma sintering, programming rate is 100 ℃/min, pressure is 60Mpa, temperature retention time 3 minutes,, can obtain molecular formula is BiAgSe
1.05te
0.95thermoelectric block body material.By test performance, its power factor when 723K is 403 μ Wm
?1k
?2, thermal conductivity is 0.68Wm
?1k
?1.
The BiAgSeTe base thermoelectricity material that technical solution of the present invention provides has lower thermal conductivity, higher Charge Transport Properties, conventional alloys thermoelectric material has potential development trend relatively at present, if will greatly improve its thermoelectricity transmission performance in conjunction with heavy metal element doping vario-property, BiAgSeTe sill is a kind of very potential novel thermo-electric converting material in a word.
Claims (3)
1. a BiAgSeTe base thermoelectricity material, its feature exists: the chemical general formula of this material is: BiAgSe
1-xte
1+x, the span Wei of x ?0.05～0.05.
2. the method for preparing BiAgSeTe base thermoelectricity material described in claim 1, it is characterized in that: the Bi that the purity of take is 99.99%, Ag, Se and Te simple substance powder are raw material, the proportioning of pressing chemical general formula weighs, with agate, grinding alms bowl mixes raw material, be pressed into block and put into vacuum drying chamber, baking temperature is 200 ℃, processing time is 48h, then after block Chan is broken, put into stainless steel jar mill, add absolute ethyl alcohol wet-milling 12 hours under 400rpm, the addition of absolute ethyl alcohol is 5～10 times of block volume, then the powder of milled is put into 60 ℃ of vacuum bellows inner dryings 24 hours, dried powder is put into graphite jig, by discharge plasma sintering, become block materials, in sintering process, programming rate is 80 ℃～150 ℃/min, sintering temperature is 450 ℃, pressure is 30Mpa～60Mpa, temperature retention time 3～6 minutes, can obtain BiAgSeTe base thermoelectricity material.
3. the method for BiAgSeTe base thermoelectricity material according to claim 2, is characterized in that: during by the proportioning raw materials weighing of chemical general formula, the value of x is 0,0.002,0.004,0.008,0.01,0.02,0.03,0.04 or 0.05.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410411877.XA CN104218143B (en) | 2014-08-20 | 2014-08-20 | A kind of preparation method of BiAgSeTe base thermoelectricity materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410411877.XA CN104218143B (en) | 2014-08-20 | 2014-08-20 | A kind of preparation method of BiAgSeTe base thermoelectricity materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104218143A true CN104218143A (en) | 2014-12-17 |
| CN104218143B CN104218143B (en) | 2017-06-13 |
Family
ID=52099446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410411877.XA Active CN104218143B (en) | 2014-08-20 | 2014-08-20 | A kind of preparation method of BiAgSeTe base thermoelectricity materials |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104218143B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115490212A (en) * | 2022-10-13 | 2022-12-20 | 中国科学技术大学 | Near-infrared active periodic plasma heterojunction photo-anode material and preparation method thereof |
| CN116281881A (en) * | 2023-03-24 | 2023-06-23 | 西安交通大学 | Bismuth telluride-based thermoelectric material, preparation method and application thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1426120A (en) * | 2001-12-13 | 2003-06-25 | 雅马哈株式会社 | Thermoelectric material and its preparing method |
| CN101273474A (en) * | 2005-09-22 | 2008-09-24 | 宇部兴产株式会社 | Thermo-electric converting material and process for producing the same |
| CN102414121A (en) * | 2009-03-24 | 2012-04-11 | 巴斯夫欧洲公司 | Self-assembled thermoelectric material |
| CN102655204A (en) * | 2012-04-28 | 2012-09-05 | 北京航空航天大学 | Sr-doping oxide BiCuSeO thermoelectric material and preparation method thereof |
| WO2013094952A9 (en) * | 2011-12-21 | 2013-10-24 | Lg Innotek Co., Ltd. | Method of manufacturing thermoelectric device and thermoelectric cooling module and device using the same |
-
2014
- 2014-08-20 CN CN201410411877.XA patent/CN104218143B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1426120A (en) * | 2001-12-13 | 2003-06-25 | 雅马哈株式会社 | Thermoelectric material and its preparing method |
| CN101273474A (en) * | 2005-09-22 | 2008-09-24 | 宇部兴产株式会社 | Thermo-electric converting material and process for producing the same |
| CN102414121A (en) * | 2009-03-24 | 2012-04-11 | 巴斯夫欧洲公司 | Self-assembled thermoelectric material |
| WO2013094952A9 (en) * | 2011-12-21 | 2013-10-24 | Lg Innotek Co., Ltd. | Method of manufacturing thermoelectric device and thermoelectric cooling module and device using the same |
| CN102655204A (en) * | 2012-04-28 | 2012-09-05 | 北京航空航天大学 | Sr-doping oxide BiCuSeO thermoelectric material and preparation method thereof |
Non-Patent Citations (5)
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115490212A (en) * | 2022-10-13 | 2022-12-20 | 中国科学技术大学 | Near-infrared active periodic plasma heterojunction photo-anode material and preparation method thereof |
| CN116281881A (en) * | 2023-03-24 | 2023-06-23 | 西安交通大学 | Bismuth telluride-based thermoelectric material, preparation method and application thereof |
| CN116281881B (en) * | 2023-03-24 | 2024-04-05 | 西安交通大学 | Bismuth telluride-based thermoelectric material, preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104218143B (en) | 2017-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103011838B (en) | Preparation method of BiCuSeO-based pyroelectric oxide powder | |
| JP2021515411A (en) | n-type Mg-Sb-based room temperature thermoelectric material and its manufacturing method | |
| CN101694010B (en) | Preparation method of layered nanostructured InSb pyroelectric material | |
| CN103872237A (en) | Copper-sulfur-based high-performance thermoelectric material and preparation method thereof | |
| CN108588838B (en) | method for preparing SnSe polycrystalline block with high thermoelectric performance | |
| CN103934459A (en) | Method for preparing high-performance Half-Heusler block thermoelectric materials at ultrahigh speed and low cost | |
| CN102887488B (en) | Cu-Ga-Sb-Te quaternary thermoelectric semiconductor with chalcopyrite structure, and preparation process for Cu-Ga-Sb-Te quaternary thermoelectric semiconductor | |
| CN105895795A (en) | Method for preparing composite tin selenide based thermoelectric material | |
| CN102280570B (en) | Trace Cu-doped Bi2S3-based thermoelectric material | |
| CN102643085A (en) | Bi Cu 1-x SeO-based oxide thermoelectric ceramic material and preparation method thereof | |
| CN102897768A (en) | Preparation method for Mg2Si thermoelectricity material | |
| CN103864026B (en) | Cu-In-Zn-Te quaternary p-type thermoelectric semiconductor and preparation technology thereof | |
| CN111640853B (en) | By Sb and Cu 2 Method for improving thermoelectric performance of n-type PbTe by Te co-doping | |
| KR20150044794A (en) | Thermoelectric materials and their manufacturing method | |
| CN106145062B (en) | A kind of quick method for preparing antimony telluride thermoelectric material | |
| CN110350074B (en) | High-performance BiCuSeO-based thermoelectric material and preparation method thereof | |
| CN107794387B (en) | A kind of supper-fast preparation β-Zn4Sb3The method of base block thermoelectric material | |
| CN107176589A (en) | One kind prepares nanosizing Mg3Sb2The new method of thermoelectric material | |
| CN104218143A (en) | BiAgSeTe-based thermoelectric material and preparation method thereof | |
| CN103320666B (en) | Ag-In-Zn-Se quaternary thermoelectric semiconductor and preparation technology thereof | |
| CN101338386A (en) | Method for preparing TiNi Sn based thermoelectric compounds | |
| CN101857929A (en) | Zinc antimony based porous p-type thermoelectric material and preparation method thereof | |
| KR101635638B1 (en) | Thermoelectric materials and their manufacturing method | |
| KR101629509B1 (en) | Thermoelectric materials and their manufacturing method | |
| CN108470817B (en) | Sb-containing P-type Cu2.856In4Te8Medium-high temperature thermoelectric material and preparation process thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |