CN104155814A - Liquid crystal display device and manufacturing method thereof - Google Patents
Liquid crystal display device and manufacturing method thereof Download PDFInfo
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- CN104155814A CN104155814A CN201410437619.9A CN201410437619A CN104155814A CN 104155814 A CN104155814 A CN 104155814A CN 201410437619 A CN201410437619 A CN 201410437619A CN 104155814 A CN104155814 A CN 104155814A
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Abstract
The invention provides a liquid crystal display device and a manufacturing method thereof. The liquid crystal display device comprises a first substrate, a second substrate arranged to be opposite to the first substrate and a liquid crystal layer arranged between the first substrate and the second substrate. A first electrode, an insulating layer pattern and a second electrode are sequentially arranged on the side, facing the liquid crystal layer, of the second substrate, and the second electrode comprises multiple bar-shaped sub-electrodes. The insulating layer pattern is arranged between the first electrode and the second electrode, and comprises multiple bar-shaped parts corresponding to the bar-shaped sub-electrodes in a one-to-one mode. The liquid crystal display device can lower the driving voltage of a liquid crystal panel on the premise that the penetration rate is met, and therefore the purpose of lowering power consumption is achieved.
Description
Technical field
The present invention relates to display technique field, particularly a kind of Liquid crystal disply device and its preparation method.
Background technology
Because liquid crystal indicator has the plurality of advantages such as frivolous, energy-conservation, radiationless, be widely used at present in the electronic equipments such as TV, PC, panel computer, personal digital assistant (PDA), mobile phone, digital camera.For panel computer, mobile phone, the portable electric appts such as digital camera, people can call according to this whenever and wherever possible, receive and send messages, online, play games or take pictures etc., therefore, these portable electric appts are greatly convenient and enriched daily life, but, because the battery capacity of portable electric appts is limited, be difficult under the situation of charging, can not meet the demand of user to service time, therefore portable electric appts is to its parts, the power consumption of the liquid crystal indicator of the small-medium size especially it being adopted requires more and more higher.
At present, the method that reduces liquid crystal indicator power consumption is mainly to realize by reducing the driving voltage of liquid crystal panel, yet the driving voltage reduction of liquid crystal panel easily causes penetrance also to decrease, thereby affects display effect.
Summary of the invention
Object of the present invention comprises provides a kind of liquid crystal indicator meeting to realize the object that reduces the driving voltage of liquid crystal panel under the prerequisite of penetrance.
Particularly, the embodiment of the present invention provides a kind of liquid crystal indicator, this liquid crystal indicator comprise first substrate, and the second substrate that is oppositely arranged of this first substrate and be arranged on this first substrate and this second substrate between liquid crystal layer.This second substrate is disposed with the first electrode, insulating layer pattern and the second electrode towards a side of this liquid crystal layer, and this second electrode comprises a plurality of strip sub-electrodes.This insulating layer pattern is arranged between this first electrode and this second electrode, and this insulating layer pattern comprises a plurality of and the plurality of strip sub-electrode strip part one to one.
Preferably, this insulating layer pattern is identical with shape, the size of this second electrode.
Preferably, a plurality of strip parts of this insulating layer pattern are identical with shape, the size of the plurality of strip sub-electrode respectively.
Preferably, this liquid crystal indicator further comprises an alignment film, and this alignment film is arranged between this liquid crystal layer and this second electrode, is used to the liquid crystal alignment of this liquid crystal layer.
Preferably, this second electrode is connected with this first electrode by this alignment film.
Preferably, this first substrate is provided with third electrode towards a side of this liquid crystal layer.
Preferably, this third electrode and this second electrode are public electrode, and this first electrode is pixel electrode.
Preferably, this first electrode is plane-shape electrode, covers the surface to the transmission region of a pixel cell that should liquid crystal indicator of this second substrate.
Preferably, this third electrode and this first electrode are public electrode, and this second electrode is pixel electrode.
Preferably, this third electrode is plane-shape electrode, covers the surface to viewing area that should liquid crystal indicator of this first substrate.
Preferably, the liquid crystal molecule of this liquid crystal layer is negative liquid crystal molecule.
The embodiment of the present invention also provides a kind of manufacture method of above-mentioned liquid crystal indicator, and this manufacture method comprises the following steps: a second substrate that is formed with the first electrode is provided; In a side that is formed with this first electrode of this second substrate, form an insulation course; In a side that is formed with this insulation course of this second substrate, form second electrode with a plurality of strip sub-electrodes; And the insulating layer pattern with this insulation course formation one with a plurality of strips parts, wherein, the plurality of strip part is corresponding one by one with the plurality of strip sub-electrode.
Preferably, with the insulating layer pattern that this insulation course formation has a plurality of strips parts, comprise the following steps: in a side that is formed with this second electrode of this second substrate, form a photoresist layer, and at the photodetector for backside-illuminated of this second substrate, the metal material layer of usining on this second substrate carries out one exposure imaging technique and forms photoresist pattern this photoresist layer as mask; And at the side irradiation that is formed with this photoresist pattern of this second substrate, using this photoresist pattern and this second electrode as this insulation course of mask etching to form this insulating layer pattern.
Preferably, the metal material layer on this second substrate comprises the metal material layer at grid place and the metal material layer at source electrode and drain electrode place of thin film transistor (TFT).
Preferably, the insulating layer pattern that this insulation course formation has a plurality of strips parts comprises the following steps: after forming this second electrode, directly using this second electrode as this insulation course of mask etching with the part removing this insulation course and do not covered by the second electrode and retain the part being covered by the second electrode, thereby form this insulating layer pattern.
Preferably, the insulating layer pattern that this insulation course formation has a plurality of strips parts comprises the following steps: after forming this second electrode, using the photoresist pattern that is used for forming this second electrode as mask, further this insulation course is etched with and removes the part part that also reservation is covered by this second electrode that this insulation course is not covered by this second electrode, thereby form this insulating layer pattern.
The liquid crystal indicator providing according to the embodiment of the present invention and manufacture method of the present invention, because the insulating layer pattern of this liquid crystal indicator is arranged between this first electrode and this second electrode, and this insulating layer pattern comprises a plurality of and the plurality of strip sub-electrode strip part one to one, therefore, this insulating layer pattern does not cover this first electrode completely, only covered the part that this first electrode and this second electrode pair are answered, therefore reduced the electric field intensity that being used between the first electrode and the second electrode shown, can realize reduction power consumption by reducing driving voltage, and also promoted to a certain extent penetrance.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of instructions, and for above and other object of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Accompanying drawing explanation
Fig. 1 is the cut-away section structural representation of a kind of liquid crystal indicator of providing of first embodiment of the invention.
Fig. 2 a to Fig. 2 g be the liquid crystal indicator shown in Fig. 1 in a kind of manufacture method provided by the present invention according to the cut-away section structural representation in the manufacture process of the first embodiment.
Fig. 3 is the cut-away section structural representation as another liquid crystal indicator of the comparison other of the liquid crystal indicator shown in Fig. 1.
Fig. 4 is the penetrance under different condition and the relation curve schematic diagram between driving voltage respectively of the liquid crystal indicator shown in the liquid crystal indicator shown in Fig. 1 and Fig. 3.
Fig. 5 is the cut-away section structural representation of the liquid crystal indicator shown in Fig. 3 in operating process.
Fig. 6 is the cut-away section structural representation of the liquid crystal indicator shown in Fig. 1 in operating process.
Fig. 7 is the cut-away section structural representation of a kind of liquid crystal indicator of providing of second embodiment of the invention.
Fig. 8 be the liquid crystal indicator shown in Fig. 7 in a kind of manufacture method provided by the present invention according to the cut-away section structural representation in a step of the second embodiment.
Fig. 9 be the liquid crystal indicator shown in Fig. 7 in a kind of manufacture method provided by the present invention according to the cut-away section structural representation in a step of the 3rd embodiment.
Embodiment
For further setting forth the present invention, reach technological means and the effect that predetermined goal of the invention is taked, below in conjunction with accompanying drawing and preferred embodiment, its embodiment of liquid crystal indicator, method, step, structure, feature and effect to proposing according to the present invention, be described in detail as follows.
Relevant aforementioned and other technology contents of the present invention, Characteristic, can clearly present in following cooperation in describing in detail with reference to graphic preferred embodiment.By the explanation of embodiment, when can be to reach technological means and the effect that predetermined object takes to be able to more deeply and concrete understanding to the present invention, yet appended graphic being only to provide with reference to the use with explanation be not used for the present invention to be limited.
Please refer to Fig. 1, Fig. 1 is the cut-away section structural representation of a kind of liquid crystal indicator of providing of first embodiment of the invention.As shown in Figure 1, this liquid crystal indicator 10 comprise first substrate 11, and the second substrate 12 that is oppositely arranged of first substrate 11 and be arranged on first substrate 11 and second substrate 12 between liquid crystal layer 13.Second substrate 12 is disposed with the first electrode 120, insulating layer pattern 122, the second electrode 124 and alignment film 126 towards a side of liquid crystal layer 13.First substrate 11 is disposed with third electrode 110, passivation layer 112 and alignment film 114 towards a side of liquid crystal layer 13.
The first electrode 120, the second electrode 124 and third electrode 110 are transparent conductive material and make, as tin indium oxide (Indium Tin Oxide, ITO), indium zinc oxide (Indium Zinc Oxide, IZO) etc.Third electrode 110 is plane-shape electrode, covers the surface of viewing area of the corresponding liquid crystal indicator 10 of first substrate 11.The second electrode 124 comprises a plurality of strip sub-electrodes 1240, and the plurality of strip sub-electrode 1240 can be parallel to each other.In the present embodiment, third electrode 110 and the second electrode 124 are public electrode, and the first electrode 120 is pixel electrode.The first electrode 120 is plane-shape electrode, covers the surface of transmission region of a pixel cell of the corresponding liquid crystal indicator 10 of second substrate 12.In other embodiments, the first electrode 120 also can be public electrode, and the second electrode 124 also can be pixel electrode.
Insulating layer pattern 122 is arranged between the first electrode 120 and the second electrode 124, and insulating layer pattern 122 comprises a plurality of and the plurality of strip sub-electrode 1240 strip part 1220 one to one.A plurality of strip parts 1220 of this insulating layer pattern 122 are identical or close with shape, the size of the plurality of strip sub-electrode 1240 respectively.
Please also refer to Fig. 2 a to Fig. 2 g, Fig. 2 a to Fig. 2 g be liquid crystal indicator 10 in a kind of manufacture method provided by the present invention according to the cut-away section structural representation in the manufacture process of the first embodiment.This manufacture method mainly be take and on second substrate 12, is formed each functional layer as example describes, and comprises the following steps:
Step 1: as shown in Figure 2 a, second substrate 12 is provided, on second substrate 12, be formed with successively thin film transistor (TFT) 14, cover this thin film transistor (TFT) 14 and the gate insulator 140 that extends out in this thin film transistor (TFT) 14 the first insulation course 15, the first insulation courses 15 on be formed with through hole 150.Thin film transistor (TFT) 14 comprises grid 141, source electrode 142 and drain electrode 143, and this grid 141, source electrode 142 and drain electrode 143 are metal material.The method that forms thin film transistor (TFT) 14, the first insulation course 15, through hole 150 on second substrate 12 can adopt known manufacturing process at present, does not repeat them here.
Step 2: as shown in Figure 2 b, form the first electrode 120.In this step, first on having the side of the first insulation course 15 of through hole 150, being formed with of second substrate 12 form one first transparency conducting layer, then this first transparency conducting layer of patterning is to form this first electrode 120, in the present embodiment, the first electrode 120 is pixel electrode, and is connected with the drain electrode 143 of thin film transistor (TFT) 14 by through hole 150.
For instance, the step of patterning the first transparency conducting layer comprises first comprehensive photoresist layer that forms on this first transparency conducting layer; Then utilize a mask to carry out exposure imaging technique one to photoresist layer, to form photoresist pattern; Recycling photoresist pattern as mask with this first transparency conducting layer of etching to form the first electrode 120.In addition, need to remove photoresist pattern, then the etching subsequent technique such as cleans and be dried.
Step 3: as shown in Figure 2 c, form the second insulation course 121.Wherein, the second insulation course 121 can be formed in a side that is formed with the first electrode 120 of second substrate 12 by low temperature chemical vapor deposition method or method of spin coating, but is not limited to this.
Step 4: as shown in Figure 2 d, form the second electrode 124.In this step, first in a side that is formed with the second insulation course 121 of second substrate 12, form one second transparency conducting layer, then this second transparency conducting layer of patterning is to form second electrode 124 with a plurality of strip sub-electrodes 1240.The step of this second transparency conducting layer of patterning is similar to the step of above-mentioned patterning the first transparency conducting layer, does not repeat them here.
Step 5: as shown in Figure 2 e, in a side that is formed with the second electrode 124 of second substrate 12, form a photoresist layer 16, and at the photodetector for backside-illuminated of this second substrate 12, with the metal material layer on this second substrate 12, as the metal material layer at the metal material layer at grid 141 places of this thin film transistor (TFT) 14 and source electrode 142 and drain electrode 143 places as mask, this photoresist layer 16 is carried out together with exposure imaging technique and form photoresist pattern 160 (seeing Fig. 2 f).
Step 6: as shown in Fig. 2 f, at a side irradiation that is formed with photoresist pattern 160 of second substrate 12, using this photoresist pattern 160 and this second electrode 124 as mask etching the second insulation course 121 to form insulating layer pattern 122 as shown in Figure 2 g.Then, remove this photoresist pattern 160, then clean and the etching subsequent technique such as dry.
The metal material layer of usining in step 5 on second substrate 12 due to this manufacture method carries out back-exposure as mask to this photoresist layer 16 and has formed photoresist pattern 160, in step 6, directly using this photoresist pattern 160 and the second electrode 124 as this insulation course 121 of mask etching to form this insulating layer pattern 122, therefore, without extra mask, step is simple, and cost is low.And in the process of this insulating layer pattern 122 of formation of step 6, can not be subject to etched injury by these photoresist pattern 160 protective film transistors 14, thereby protective film transistor 14 is electrically unaffected.
From Fig. 2 g, because insulating layer pattern 122 adopts photoresist pattern 160 and the second electrode 124 to form as mask etching, therefore the insulating layer pattern 122 forming by above-mentioned manufacture method is except having a plurality of strip parts 1220 corresponding with this second electrode 124, also have with this second substrate 12 on conduct form the metal material layer of the mask of this photoresist pattern 160, such as the metal material layer at grid 141 places of thin film transistor (TFT) 14 and other parts 1222 of the metal material layer correspondence at source electrode 142 and drain electrode 143 places.
In order to illustrate that more intuitively this liquid crystal indicator 10 can realize the object that reduces the driving voltage of liquid crystal panel under the prerequisite of penetrance meeting, below comparative result after this liquid crystal indicator 10 of explanation is simulated by TechWiz software respectively with another liquid crystal indicator.Please refer to Fig. 3, Fig. 3 is the cut-away section structural representation as a liquid crystal indicator 20 of the comparison other of this liquid crystal indicator 10.This liquid crystal indicator 20 is similar to liquid crystal indicator 10, and difference is mainly, the insulation course 221 being arranged between the first electrode 220 and the second electrode 224 is not patterned, but one complete structure.Refer to following table, following table is liquid crystal indicator 20 and liquid crystal indicator 10 penetrance under the insulation course 221 of different-thickness and the condition of insulating layer pattern 122 and when liquid crystal panel maximum drive voltage and 4V driving voltage respectively.
As shown above, liquid crystal indicator 20 at the thickness of insulation course 221 is
condition under, the maximum drive voltage of liquid crystal panel needs 5V, now, the penetrance of this liquid crystal indicator 20 is 3.591%; When driving voltage drops to 4V, the penetrance of this liquid crystal indicator 20 drops to 3.379%.Liquid crystal indicator 20 at the thickness of insulation course 221 is
condition under, the maximum drive voltage of liquid crystal panel needs 4.6V, now, the penetrance of this liquid crystal indicator 20 is 3.588%; When driving voltage drops to 4V, the penetrance of this liquid crystal indicator 20 drops to 3.493%.And liquid crystal indicator 10 is respectively at the thickness of insulating layer pattern 122
with
condition under, the maximum drive voltage of liquid crystal panel is 4.4V, now, the penetrance of this liquid crystal indicator 10 is respectively 3.614%, 3.615% and 3.615%, the variation of insulating layer pattern 122 thickness is almost on not impact of penetrance; When driving voltage drops to 4V, this liquid crystal indicator 10 is respectively at the thickness of insulating layer pattern 122
with
condition under penetrance drop to respectively 3.600%, 3.598% and 3.595%, that is to say, at the thickness of insulating layer pattern 122, be
time, the penetrance of this liquid crystal indicator 10 under the driving of driving voltage 4V is the highest.
Comparative liquid crystal display device 10 and liquid crystal indicator 20, be at insulating layer pattern 122 and the thickness of insulation course 221
and driving voltage is under the condition of 4V, the penetrance of liquid crystal indicator 10 is 3.600%, and the penetrance of liquid crystal indicator 20 is 3.493%, and the penetrance of liquid crystal indicator 10 has promoted 3% than liquid crystal indicator 20.And at the thickness of insulating layer pattern 122 be
the thickness of insulation course 221 is
and driving voltage is under the condition of 4V, the penetrance of liquid crystal indicator 10 is 3.600%, and the penetrance of liquid crystal indicator 20 is 3.379%, and the penetrance of this liquid crystal indicator 10 has promoted 6.5% than this liquid crystal indicator 20.Further, at insulating layer pattern 122 and the thickness of insulation course 221, be
condition under, the penetrance of this liquid crystal indicator 10 under the driving of driving voltage 4V is 3.600%, and the penetrance of this liquid crystal indicator 20 under the driving of maximum drive voltage 4.6V is 3.588%, now, the penetrance of liquid crystal indicator 10 is also a little more than liquid crystal indicator 20.
As can be seen here, after driving voltage drops to 4V, the penetrance of liquid crystal indicator 10 can keep the even penetrance under maximum drive voltage higher than liquid crystal indicator 20, therefore adopts the framework of this liquid crystal indicator 10 finally to realize the object that reduces power consumption by reducing the mode of driving voltage.
Please also refer to Fig. 4, Fig. 4 is liquid crystal indicator 10 and liquid crystal indicator 20 penetrance under different condition and the relation curve schematic diagram between driving voltage respectively, and wherein, 1. curve represents that liquid crystal indicator 20 at the thickness of insulation course 221 is
condition under relation curve between penetrance and driving voltage, 2. curve represents that liquid crystal indicator 20 at the thickness of insulation course 221 is
condition under relation curve between penetrance and driving voltage, 3. curve represents that liquid crystal indicator 10 at the thickness of insulating layer pattern 122 is
condition under relation curve between penetrance and driving voltage, 4. curve represents that liquid crystal indicator 10 at the thickness of insulating layer pattern 122 is
condition under relation curve between penetrance and driving voltage, and 5. curve represents that liquid crystal indicator 10 at the thickness of insulating layer pattern 122 is
condition under relation curve between penetrance and driving voltage.
From Fig. 4, also can find out, liquid crystal indicator 10 is when the thickness difference of insulating layer pattern 122, relation curve between penetrance and driving voltage is almost overlapping, that is to say, the variation of insulating layer pattern 122 thickness is almost on not impact of the relation curve between penetrance and driving voltage, and when driving voltage is less than 4V, under same driving voltage, the penetrance of liquid crystal indicator 10 is all higher than the penetrance of liquid crystal indicator 20.Therefore, liquid crystal indicator 10 not only can be realized the object that reduces power consumption by reducing driving voltage, and has also promoted to a certain extent penetrance.
In addition, in the present embodiment, liquid crystal molecule in liquid crystal layer 13 adopts negative liquid crystal molecule, because negative liquid crystal molecule is along rotating with direction of an electric field vertical direction, thus, in electric field, the short-axis direction of negative liquid crystal molecule is parallel with direction of an electric field, while therefore applying the electric field that shows use in liquid crystal indicator 10, negative liquid crystal molecule in liquid crystal layer 13 can be at the rotation with in surface parallel with first substrate 11, second substrate 12, and short-axis direction is parallel with direction of an electric field, make the light transmission of liquid crystal layer 13 better.
Please also refer to Fig. 3 and Fig. 5, wherein, Fig. 5 is the cut-away section structural representation of liquid crystal indicator 20 in operating process.As shown in Figure 3 and Figure 5, when liquid crystal indicator 20 enters line inversion driving, on the first electrode 220 and the second electrode 224 (pixel electrode and public electrode), applying voltage alternately changes formed direction of an electric field on liquid crystal layer 23, and when executed alive mean value is non-vanishing, foreign ion in liquid crystal layer 23 can tend to the first electrode 220 or the second electrode 224 motions, until be adsorbed onto the surface of contact of alignment film 226 and liquid crystal layer 23, be adsorbed onto charged foreign ion and opposite polarity the first electrode 220 or the second electrode 224 formation electric fields on this surface of contact, this electric field can affect the rotation of the liquid crystal molecule of liquid crystal layer 23, even while not applying voltage on this first electrode 220 and the second electrode 224, the arrangement of liquid crystal molecule also can change because of the existence of this electric field its original state, thereby cause this liquid crystal indicator 20 that ghost phenomena occurs when showing, affect display effect.
Please also refer to Fig. 1 and Fig. 6, wherein, Fig. 6 is the cut-away section structural representation of liquid crystal indicator 10 in operating process.As shown in Fig. 1 and Fig. 6, alignment film 126 is used to the liquid crystal alignment in liquid crystal layer 13, be arranged between liquid crystal layer 13 and the second electrode 124, and the part and the first electrode 120 that in the lateral parts of covering the second electrode 124, insulating layer pattern 122, other functional layer on second substrate 12, by the first electrode 120, are not covered are not insulated the part that layer pattern 122 covers, that is to say, alignment film 126 is formed on a side that is formed with the second electrode 124 of second substrate 12.Due to the existence of insulating layer pattern 122, alignment film 126 not only covers the second electrode 124, but also directly overlay on the first electrode 120, is not insulated the part that layer pattern 122 covers, and therefore the second electrode 124 can connect the first electrode 120 by alignment film 126.In the operating process of liquid crystal indicator 10, voltage difference between the first electrode 120 and the second electrode 124 can make the small electric current of the interior formation of alignment film 126, the charged foreign ion that this electric current can be on the surface of contact of alignment film 226 and liquid crystal layer 23 provides a release channel, weaken and even eliminate the impact that charged foreign ion and the first electrode 120 or the formed electric field of the second electrode 124 rotate liquid crystal molecule, therefore can effectively improve the ghost phenomena that liquid crystal indicator 10 occurs when showing.
In sum, because the insulating layer pattern 122 of liquid crystal indicator 10 does not cover the first electrode 120 completely at the transmission region of pixel cell, only covered this first electrode 120 part corresponding with this second electrode 124, therefore reduced between the first electrode 120 and the second electrode 124, the impact of the electric field intensity between public electrode and pixel electrode in other words, not only can realize the object that reduces power consumption by reducing driving voltage, and promote to a certain extent penetrance.Further, because the second electrode 124 can connect the first electrode 120 by alignment film 126, in the operating process of liquid crystal indicator 10, in alignment film 126, can form small electric current, this electric current can weaken even eliminates the impact that between charged foreign ion and the first electrode 120 or the second electrode 124, formed electric field rotates liquid crystal molecule, therefore can effectively improve the ghost phenomena that liquid crystal indicator 10 occurs when showing.
Please refer to Fig. 7, Fig. 7 is the cut-away section structural representation of a kind of liquid crystal indicator of providing of second embodiment of the invention.As shown in Figure 7, the liquid crystal indicator 10 that liquid crystal indicator 30 provides to first embodiment of the invention is similar, difference is, the insulating layer pattern 322 of liquid crystal indicator 30 is only corresponding with the second electrode 324, in other words, insulating layer pattern 322 is identical or close with shape, the size of the second electrode 324.
Please refer to Fig. 8, Fig. 8 be liquid crystal indicator 30 in a kind of manufacture method provided by the present invention according to the cut-away section structural representation in a step of the second embodiment.This manufacture method is similar to the manufacture method that above-mentioned the first embodiment provides, and difference is to form the step difference of insulating layer pattern 322.As shown in Figure 8, in this manufacture method, the step that forms insulating layer pattern 322 is: after formation has the second electrode 324 of a plurality of strip sub-electrodes 3240, the part part that also reservation is covered by the second electrode 324 that second electrode 324 of directly usining is not covered by the second electrode 324 to remove insulation course 321 as mask etching insulation course 321, thereby form the insulating layer pattern with a plurality of strip parts 3,220 322 as shown in Figure 7, not only a plurality of strip parts 3220 of insulating layer pattern 322 respectively with the shape of a plurality of strip sub-electrodes 3240 of the second electrode 324, size is identical or close, and insulating layer pattern 322 on the whole also with the shape of the second electrode 324, size is identical or close.Due to this manufacture method directly using the second electrode 324 as this insulation course 321 of mask etching to form insulating layer pattern 322, therefore, without extra mask, step is simple, cost is low.
Please refer to Fig. 9, Fig. 9 be liquid crystal indicator 30 in a kind of manufacture method provided by the present invention according to the cut-away section structural representation in a step of the 3rd embodiment.This manufacture method is similar to the manufacture method that above-mentioned the first embodiment provides, and difference is to form the step difference of this insulating layer pattern 322.As shown in Figure 4, after formation has the second electrode 324 of a plurality of strip sub-electrodes 3240, first do not remove for forming the photoresist pattern 325 of this second electrode 324, but then using again this photoresist pattern 325 as mask, further insulation course 321 is etched with and removes the part part that also reservation is covered by this second electrode 324 that this insulation course 321 is not covered by this second electrode 324, thereby form the insulating layer pattern with a plurality of strip parts 3,220 322 as shown in Figure 7, not only a plurality of strip parts 3220 of this insulating layer pattern 322 respectively with the shape of a plurality of strip sub-electrodes 3240 of this second electrode 324, size is identical or close, and this insulating layer pattern 322 on the whole also with the shape of this second electrode 324, size is identical or close.After forming this insulating layer pattern 322, then remove this photoresist pattern 325, clean and the dry etching subsequent technique that waits.Due to this manufacture method directly using form this second electrode 324 photoresist pattern 325 as this insulation course 321 of mask etching to form this insulating layer pattern 322, therefore, without extra mask, step is simple, cost is low.
Under ideal conditions, by above-mentioned second, formed this insulating layer pattern 322 of manufacture method that the 3rd embodiment provides should with the shape of this second electrode 324, size is identical, but in Practical manufacturing process, restriction due to process conditions, the shape of the insulating layer pattern 322 in fact forming, size may with the shape of the second electrode 324, between size, there is certain error, so shape of insulating layer pattern 322, size may be bigger or be slightly less than the shape of this second electrode 324, size, equally, above-mentioned first, second, formed this insulating layer pattern 122 of manufacture method that the 3rd embodiment provides, a plurality of strip parts 1220 of 322, 3220 shape, size also may be respectively and corresponding strip sub-electrode 1240, 3240 shape, between size, there is certain error.Therefore, it should be noted that, a plurality of strip parts 1220,3220 of this insulating layer pattern 122,322 of indication of the present invention respectively identical with shape, size shape, the size identical and this insulating layer pattern 322 and this second electrode 324 of the plurality of strip sub-electrode 1240,3240, " identical " wherein should be " identical " that allows certain error, and are not " identical " in absolute sense.
The insulating layer pattern 322 of the liquid crystal indicator 30 in the present embodiment does not cover the first electrode 320 completely at the transmission region of pixel cell, only covered the first electrode 320 part corresponding with the second electrode 324, therefore reduced between the first electrode 320 and the second electrode 324, the impact of the electric field intensity between public electrode and pixel electrode in other words, not only can realize the object that reduces power consumption by reducing driving voltage, and promote to a certain extent penetrance.Further, because the second electrode 324 can connect the first electrode 320 by alignment film 326, in the operating process of liquid crystal indicator 30, in alignment film 326, can form small electric current, this electric current can weaken even eliminates the impact that between charged foreign ion and the first electrode 320 or the second electrode 324, formed electric field rotates liquid crystal molecule, therefore can effectively improve the ghost phenomena that liquid crystal indicator 30 occurs when showing.
Below be only preferred embodiment of the present invention, not the present invention is done to any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet not in order to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, when can utilizing the technology contents of above-mentioned announcement to make a little change or being modified to the equivalent embodiment of equivalent variations, in every case be not depart from technical solution of the present invention content, any simple modification of above embodiment being done according to technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (16)
1. a liquid crystal indicator, comprise first substrate, and the second substrate that is oppositely arranged of this first substrate and be arranged on this first substrate and this second substrate between liquid crystal layer, it is characterized in that, this second substrate is disposed with the first electrode, insulating layer pattern and the second electrode towards a side of this liquid crystal layer, this second electrode comprises a plurality of strip sub-electrodes, this insulating layer pattern is arranged between this first electrode and this second electrode, and this insulating layer pattern comprises a plurality of and the plurality of strip sub-electrode strip part one to one.
2. liquid crystal indicator according to claim 1, is characterized in that, this insulating layer pattern is identical with shape, the size of this second electrode.
3. liquid crystal indicator according to claim 1, is characterized in that, a plurality of strip parts of this insulating layer pattern are identical with shape, the size of the plurality of strip sub-electrode respectively.
4. liquid crystal indicator according to claim 1, is characterized in that, this liquid crystal indicator further comprises an alignment film, and this alignment film is arranged between this liquid crystal layer and this second electrode, is used to the liquid crystal alignment of this liquid crystal layer.
5. liquid crystal indicator according to claim 4, is characterized in that, this second electrode is connected with this first electrode by this alignment film.
6. liquid crystal indicator according to claim 1, is characterized in that, this first substrate is provided with third electrode towards a side of this liquid crystal layer.
7. liquid crystal indicator according to claim 6, is characterized in that, this third electrode and this second electrode are public electrode, and this first electrode is pixel electrode.
8. liquid crystal indicator according to claim 7, is characterized in that, this first electrode is plane-shape electrode, covers the surface to the transmission region of a pixel cell that should liquid crystal indicator of this second substrate.
9. liquid crystal indicator according to claim 6, is characterized in that, this third electrode and this first electrode are public electrode, and this second electrode is pixel electrode.
10. liquid crystal indicator according to claim 6, is characterized in that, this third electrode is plane-shape electrode, covers the surface to viewing area that should liquid crystal indicator of this first substrate.
11. liquid crystal indicators according to claim 1, is characterized in that, the liquid crystal molecule of this liquid crystal layer is negative liquid crystal molecule.
The manufacture method of 12. 1 kinds of liquid crystal indicators as claimed in claim 1, is characterized in that, this manufacture method comprises the following steps:
One second substrate that is formed with the first electrode is provided;
In a side that is formed with this first electrode of this second substrate, form an insulation course;
In a side that is formed with this insulation course of this second substrate, form second electrode with a plurality of strip sub-electrodes; And
With this insulation course, form one and have a plurality of strips insulating layer pattern partly, wherein, the plurality of strip part is corresponding one by one with the plurality of strip sub-electrode.
13. manufacture methods according to claim 12, is characterized in that, with the insulating layer pattern that this insulation course formation has a plurality of strips parts, comprise the following steps:
In a side that is formed with this second electrode of this second substrate, form a photoresist layer, and at the photodetector for backside-illuminated of this second substrate, the metal material layer of usining on this second substrate carries out one exposure imaging technique and forms photoresist pattern this photoresist layer as mask; And
At a side irradiation that is formed with this photoresist pattern of this second substrate, using this photoresist pattern and this second electrode as this insulation course of mask etching to form this insulating layer pattern.
14. manufacture methods according to claim 13, is characterized in that, the metal material layer on this second substrate comprises the metal material layer at grid place and the metal material layer at source electrode and drain electrode place of thin film transistor (TFT).
15. manufacture methods according to claim 12, is characterized in that, the insulating layer pattern that this insulation course formation has a plurality of strips parts comprises the following steps:
After forming this second electrode, directly using this second electrode as this insulation course of mask etching with the part removing this insulation course and do not covered by the second electrode and retain the part being covered by the second electrode, thereby form this insulating layer pattern.
16. manufacture methods according to claim 12, is characterized in that, the insulating layer pattern that this insulation course formation has a plurality of strips parts comprises the following steps:
After forming this second electrode, using the photoresist pattern that is used for forming this second electrode as mask, further this insulation course is etched with and removes the part part that also reservation is covered by this second electrode that this insulation course is not covered by this second electrode, thereby form this insulating layer pattern.
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