CN104130715B - A kind of polishing fluid for tungsten in semiconductor integrated circuit and preparation method thereof - Google Patents
A kind of polishing fluid for tungsten in semiconductor integrated circuit and preparation method thereof Download PDFInfo
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- CN104130715B CN104130715B CN201410308825.XA CN201410308825A CN104130715B CN 104130715 B CN104130715 B CN 104130715B CN 201410308825 A CN201410308825 A CN 201410308825A CN 104130715 B CN104130715 B CN 104130715B
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- auxiliary agent
- tungsten
- integrated circuit
- polishing fluid
- semiconductor integrated
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- 238000005498 polishing Methods 0.000 title claims abstract description 24
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 17
- 239000010937 tungsten Substances 0.000 title claims abstract description 17
- 239000012530 fluid Substances 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000002360 preparation method Methods 0.000 title claims description 7
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- DUIOKRXOKLLURE-UHFFFAOYSA-N 2-octylphenol Chemical compound CCCCCCCCC1=CC=CC=C1O DUIOKRXOKLLURE-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000008367 deionised water Substances 0.000 claims abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims abstract description 4
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims abstract description 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims abstract description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 claims abstract description 4
- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 claims abstract description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 claims abstract description 4
- 239000005642 Oleic acid Substances 0.000 claims abstract description 4
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims abstract description 4
- 150000001412 amines Chemical class 0.000 claims abstract description 4
- 229960003237 betaine Drugs 0.000 claims abstract description 4
- 229910021538 borax Inorganic materials 0.000 claims abstract description 4
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims abstract description 4
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims abstract description 4
- 239000004328 sodium tetraborate Substances 0.000 claims abstract description 4
- 235000010339 sodium tetraborate Nutrition 0.000 claims abstract description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000002156 mixing Methods 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 229910052582 BN Inorganic materials 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 235000010489 acacia gum Nutrition 0.000 claims description 6
- 239000001785 acacia senegal l. willd gum Substances 0.000 claims description 6
- 239000012467 final product Substances 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- IDQBJILTOGBZCR-UHFFFAOYSA-N 1-butoxypropan-1-ol Chemical compound CCCCOC(O)CC IDQBJILTOGBZCR-UHFFFAOYSA-N 0.000 claims description 3
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000004115 Sodium Silicate Substances 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 229960001484 edetic acid Drugs 0.000 claims description 3
- 239000000839 emulsion Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000012774 insulation material Substances 0.000 claims description 3
- 239000004323 potassium nitrate Substances 0.000 claims description 3
- 235000010333 potassium nitrate Nutrition 0.000 claims description 3
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 3
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 3
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000003746 surface roughness Effects 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 abstract description 2
- 230000007774 longterm Effects 0.000 abstract description 2
- 238000005461 lubrication Methods 0.000 abstract description 2
- 239000004094 surface-active agent Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 241000533950 Leucojum Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 1
- 238000009533 lab test Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- PVGBHEUCHKGFQP-UHFFFAOYSA-N sodium;n-[5-amino-2-(4-aminophenyl)sulfonylphenyl]sulfonylacetamide Chemical compound [Na+].CC(=O)NS(=O)(=O)C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 PVGBHEUCHKGFQP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a kind of polishing fluid for tungsten in semiconductor integrated circuit, it is characterized in that, be made up of the raw material of following weight portion: antimonous oxide 3-4.5, octyl phenol APEO 3.5-4.5, oleic acid 6-8, enuatrol 3-5, betaine 2.5-3.5, dimethyl succinate 5.5-7.5, abrasive silica 11-14, rosin amine 2-4, sodium tetraborate 3-5, auxiliary agent 5-7, deionized water 300; The present invention fills a prescription rationally, by adding the surfactants such as octyl phenol APEO, forming the physical absorption surface of long-term easy cleaning, to improve surface state, to reduce the surface roughness of wafer, adding auxiliary agent, having good lubrication, film forming; Polishing fluid of the present invention does not corrode contaminated equipment, easily cleans, and metal level tungsten polishing speed is fast, and controllability is good, and after polishing, planarization is good, and technique is simple, and cost is low.
Description
Technical field
The present invention relates to technical field of surface, particularly a kind of polishing fluid for tungsten in semiconductor integrated circuit and preparation method thereof.
Background technology
Tungsten is a kind of metal material be widely used in semiconductor integrated circuit, and due to metal tungsten material self character, and large scale integrated circuit effects on surface permissible accuracy is very high, brings great difficulty to material surface planarization process.Tungsten CMP liquid (W CMP) gets the nod rapidly in the operation being less than tungsten plug formation in 0.35um processing procedure.Acid polishing slurry is mainly adopted to carry out polishing at present in the world, comparatively serious to the damage ratio of equipment, and after polishing, clean difficulty increase.If the oxidability of oxidant is more weak in alkaline solution, do not reach the polishing speed requirement of client.Therefore be necessary to propose a kind of Wolfram polishing liquid, to solve the problem, suitable polishing speed can be obtained, without serious damage, low surface roughness.
Summary of the invention
The object of this invention is to provide a kind of polishing fluid for tungsten in semiconductor integrated circuit and preparation method thereof.
In order to realize object of the present invention, the present invention is by following scheme implementation:
For a polishing fluid for tungsten in semiconductor integrated circuit, be made up of the raw material of following weight portion: antimonous oxide 3-4.5, octyl phenol APEO 3.5-4.5, oleic acid 6-8, enuatrol 3-5, betaine 2.5-3.5, dimethyl succinate 5.5-7.5, abrasive silica 11-14, rosin amine 2-4, sodium tetraborate 3-5, auxiliary agent 5-7, deionized water 300;
Described auxiliary agent is made up of the raw material of following weight portion: boron nitride 5-7, carborundum 4-6, sodium metasilicate 1-2, potassium nitrate 2-3, benzimidazole 1-2, propandiol butyl ether 2-3, Aqueous acrylic urethane's copolymer emulsion 4-6, ethylenediamine tetra-acetic acid 3-5, Lei meter Bang 3-4, Arabic gum 2.5-3.5, water 50-53; First boron nitride, carborundum, Arabic gum, Lei meter Pa'anga enter in the water of half amount by preparation method, grinding 1-2 hour, then slowly adds all the other residual componentss, is slowly heated to 70 DEG C-80 DEG C, stirring reaction 30-50 minute under 300-500 rev/min of condition, is cooled to room temperature and get final product.
A kind of polishing fluid for tungsten in semiconductor integrated circuit of the present invention, be made up of following concrete steps:
(1) antimonous oxide, abrasive silica, octyl phenol APEO are mixed, add appropriate deionized water, be heated to 30 DEG C-35 DEG C, grinding 25-35 minute, obtain mixing A material;
(2) all the other residual componentss except auxiliary agent are joined in reactor, be uniformly mixed, be slowly heated to 35 DEG C-45 DEG C, insulation 1-1.5 hour, obtain mixing B material;
(3) the mixing B of insulation material is slowly joined in mixing A material while stirring, after fully stirring, add auxiliary agent, continue to stir 20-30 minute, be cooled to room temperature and get final product.
Excellent effect of the present invention is: the present invention fills a prescription rationally, by adding the surfactants such as octyl phenol APEO, forms the physical absorption surface of long-term easy cleaning, to improve surface state, to reduce the surface roughness of wafer, add auxiliary agent, there is good lubrication, film forming; Polishing fluid of the present invention does not corrode contaminated equipment, easily cleans, and metal level tungsten polishing speed is fast, and controllability is good, and after polishing, planarization is good, and technique is simple, and cost is low.
Embodiment
Below by instantiation, the present invention is described in detail.
For a polishing fluid for tungsten in semiconductor integrated circuit, be made up of the raw material of following weight portion (kilogram): antimonous oxide 3, octyl phenol APEO 3.5, oleic acid 6, enuatrol 3, betaine 2.5, dimethyl succinate 5.5, abrasive silica 11, rosin amine 2, sodium tetraborate 3, auxiliary agent 5, deionized water 300;
Described auxiliary agent is made up of the raw material of following weight portion (kilogram): boron nitride 5, carborundum 4, sodium metasilicate 1, potassium nitrate 2, benzimidazole 1, propandiol butyl ether 2, Aqueous acrylic urethane's copolymer emulsion 4, ethylenediamine tetra-acetic acid 3, Lei meter Bang 3, Arabic gum 2.5, water 50; First boron nitride, carborundum, Arabic gum, Lei meter Pa'anga enter in the water of half amount by preparation method, grinding 1-2 hour, then slowly adds all the other residual componentss, is slowly heated to 70 DEG C-80 DEG C, stirring reaction 30-50 minute under 300-500 rev/min of condition, is cooled to room temperature and get final product.
A kind of polishing fluid for tungsten in semiconductor integrated circuit of the present invention, be made up of following concrete steps:
(1) antimonous oxide, abrasive silica, octyl phenol APEO are mixed, add appropriate deionized water, be heated to 30 DEG C-35 DEG C, grinding 25-35 minute, obtain mixing A material;
(2) all the other residual componentss except auxiliary agent are joined in reactor, be uniformly mixed, be slowly heated to 35 DEG C-45 DEG C, insulation 1-1.5 hour, obtain mixing B material;
(3) the mixing B of insulation material is slowly joined in mixing A material while stirring, after fully stirring, add auxiliary agent, continue to stir 20-30 minute, be cooled to room temperature and get final product.
Laboratory test results: the surface visually observing each leaf, surface appearance uniform, without heterochromatic or have slight color differences and without snowflake; Adopt BYK company of miniature glossometer A-4430(Germany) test the glossiness on each polishing leaf surface, glossiness is 47 Gu.
Claims (2)
1. the polishing fluid for tungsten in semiconductor integrated circuit, it is characterized in that, be made up of the raw material of following weight portion: antimonous oxide 3-4.5, octyl phenol APEO 3.5-4.5, oleic acid 6-8, enuatrol 3-5, betaine 2.5-3.5, dimethyl succinate 5.5-7.5, abrasive silica 11-14, rosin amine 2-4, sodium tetraborate 3-5, auxiliary agent 5-7, deionized water 300;
Described auxiliary agent is made up of the raw material of following weight portion: boron nitride 5-7, carborundum 4-6, sodium metasilicate 1-2, potassium nitrate 2-3, benzimidazole 1-2, propandiol butyl ether 2-3, Aqueous acrylic urethane's copolymer emulsion 4-6, ethylenediamine tetra-acetic acid 3-5, Lei meter Bang 3-4, Arabic gum 2.5-3.5, water 50-53; First boron nitride, carborundum, Arabic gum, Lei meter Pa'anga enter in the water of half amount by preparation method, grinding 1-2 hour, then slowly adds all the other residual componentss, is slowly heated to 70 DEG C-80 DEG C, stirring reaction 30-50 minute under 300-500 rev/min of condition, is cooled to room temperature and get final product.
2. a kind of polishing fluid for tungsten in semiconductor integrated circuit according to claim 1, is characterized in that, be made up of following concrete steps:
(1) antimonous oxide, abrasive silica, octyl phenol APEO are mixed, add appropriate deionized water, be heated to 30 DEG C-35 DEG C, grinding 25-35 minute, obtain mixing A material;
(2) all the other residual componentss except auxiliary agent are joined in reactor, be uniformly mixed, be slowly heated to 35 DEG C-45 DEG C, insulation 1-1.5 hour, obtain mixing B material;
(3) the mixing B of insulation material is slowly joined in mixing A material while stirring, after fully stirring, add auxiliary agent, continue to stir 20-30 minute, be cooled to room temperature and get final product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410308825.XA CN104130715B (en) | 2014-07-01 | 2014-07-01 | A kind of polishing fluid for tungsten in semiconductor integrated circuit and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410308825.XA CN104130715B (en) | 2014-07-01 | 2014-07-01 | A kind of polishing fluid for tungsten in semiconductor integrated circuit and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104130715A CN104130715A (en) | 2014-11-05 |
| CN104130715B true CN104130715B (en) | 2015-09-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410308825.XA Expired - Fee Related CN104130715B (en) | 2014-07-01 | 2014-07-01 | A kind of polishing fluid for tungsten in semiconductor integrated circuit and preparation method thereof |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105505229B (en) * | 2016-01-21 | 2018-01-02 | 河南联合精密材料股份有限公司 | A kind of medal polish composite polishing liquid and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5728308A (en) * | 1995-05-26 | 1998-03-17 | Sony Corporation | Method of polishing a semiconductor substrate during production of a semiconductor device |
| JP2003041385A (en) * | 2001-07-27 | 2003-02-13 | Ajinomoto Co Inc | Agent for forming metal protective film, and its use |
| CN1621469A (en) * | 2003-11-26 | 2005-06-01 | 中国科学院金属研究所 | Chemically mechanical polishing solution |
| EP1421610B1 (en) * | 2001-08-09 | 2006-11-08 | Cheil Industries Inc. | Slurry composition for use in chemical mechanical polishing of metal wiring |
| CN102108259A (en) * | 2009-12-25 | 2011-06-29 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN103495929A (en) * | 2013-09-18 | 2014-01-08 | 杭州百木表面技术有限公司 | Grinding and polishing method of metal strip |
| CN103709939A (en) * | 2013-12-31 | 2014-04-09 | 镇江市港南电子有限公司 | Silicon wafer grinding fluid |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI314950B (en) * | 2001-10-31 | 2009-09-21 | Hitachi Chemical Co Ltd | Polishing slurry and polishing method |
-
2014
- 2014-07-01 CN CN201410308825.XA patent/CN104130715B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5728308A (en) * | 1995-05-26 | 1998-03-17 | Sony Corporation | Method of polishing a semiconductor substrate during production of a semiconductor device |
| JP2003041385A (en) * | 2001-07-27 | 2003-02-13 | Ajinomoto Co Inc | Agent for forming metal protective film, and its use |
| EP1421610B1 (en) * | 2001-08-09 | 2006-11-08 | Cheil Industries Inc. | Slurry composition for use in chemical mechanical polishing of metal wiring |
| CN1621469A (en) * | 2003-11-26 | 2005-06-01 | 中国科学院金属研究所 | Chemically mechanical polishing solution |
| CN102108259A (en) * | 2009-12-25 | 2011-06-29 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN103495929A (en) * | 2013-09-18 | 2014-01-08 | 杭州百木表面技术有限公司 | Grinding and polishing method of metal strip |
| CN103709939A (en) * | 2013-12-31 | 2014-04-09 | 镇江市港南电子有限公司 | Silicon wafer grinding fluid |
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