CH592959A5 - - Google Patents
Info
- Publication number
- CH592959A5 CH592959A5 CH459476A CH459476A CH592959A5 CH 592959 A5 CH592959 A5 CH 592959A5 CH 459476 A CH459476 A CH 459476A CH 459476 A CH459476 A CH 459476A CH 592959 A5 CH592959 A5 CH 592959A5
- Authority
- CH
- Switzerland
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/036—Diffusion, nonselective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/082—Ion implantation FETs/COMs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/568,636 US4044454A (en) | 1975-04-16 | 1975-04-16 | Method for forming integrated circuit regions defined by recessed dielectric isolation |
Publications (1)
Publication Number | Publication Date |
---|---|
CH592959A5 true CH592959A5 (xx) | 1977-11-15 |
Family
ID=24272102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH459476A CH592959A5 (xx) | 1975-04-16 | 1976-04-12 |
Country Status (13)
Country | Link |
---|---|
US (1) | US4044454A (xx) |
JP (1) | JPS51124386A (xx) |
AU (1) | AU497861B2 (xx) |
BE (1) | BE839579A (xx) |
BR (1) | BR7602384A (xx) |
CA (1) | CA1045724A (xx) |
CH (1) | CH592959A5 (xx) |
DE (1) | DE2615438A1 (xx) |
FR (1) | FR2308204A1 (xx) |
GB (1) | GB1515639A (xx) |
IT (1) | IT1064171B (xx) |
NL (1) | NL7603747A (xx) |
SE (1) | SE411814B (xx) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5275989A (en) * | 1975-12-22 | 1977-06-25 | Hitachi Ltd | Production of semiconductor device |
JPS6035818B2 (ja) * | 1976-09-22 | 1985-08-16 | 日本電気株式会社 | 半導体装置の製造方法 |
FR2422257A1 (fr) * | 1977-11-28 | 1979-11-02 | Silicium Semiconducteur Ssc | Procede de sillonnage et de glassiviation et nouvelle structure de sillon |
US4261761A (en) * | 1979-09-04 | 1981-04-14 | Tektronix, Inc. | Method of manufacturing sub-micron channel width MOS transistor |
FR2476912A1 (fr) * | 1980-02-22 | 1981-08-28 | Thomson Csf | Procede d'isolement des interconnexions de circuits integres, et circuit integre utilisant ce procede |
US4536947A (en) * | 1983-07-14 | 1985-08-27 | Intel Corporation | CMOS process for fabricating integrated circuits, particularly dynamic memory cells with storage capacitors |
US4505026A (en) * | 1983-07-14 | 1985-03-19 | Intel Corporation | CMOS Process for fabricating integrated circuits, particularly dynamic memory cells |
US4519128A (en) * | 1983-10-05 | 1985-05-28 | International Business Machines Corporation | Method of making a trench isolated device |
US4594769A (en) * | 1984-06-15 | 1986-06-17 | Signetics Corporation | Method of forming insulator of selectively varying thickness on patterned conductive layer |
US4983537A (en) * | 1986-12-29 | 1991-01-08 | General Electric Company | Method of making a buried oxide field isolation structure |
US5061654A (en) * | 1987-07-01 | 1991-10-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit having oxide regions with different thickness |
EP0309788A1 (de) * | 1987-09-30 | 1989-04-05 | Siemens Aktiengesellschaft | Verfahren zur Erzeugung eines versenkten Oxids |
JP2886183B2 (ja) * | 1988-06-28 | 1999-04-26 | 三菱電機株式会社 | フィールド分離絶縁膜の製造方法 |
US5049520A (en) * | 1990-06-06 | 1991-09-17 | Micron Technology, Inc. | Method of partially eliminating the bird's beak effect without adding any process steps |
JPH06349820A (ja) * | 1993-06-11 | 1994-12-22 | Rohm Co Ltd | 半導体装置の製造方法 |
JP2911394B2 (ja) * | 1995-08-22 | 1999-06-23 | 株式会社アルテクス | 超音波接合装置及び共振器 |
US5882982A (en) * | 1997-01-16 | 1999-03-16 | Vlsi Technology, Inc. | Trench isolation method |
DE69723044T2 (de) | 1997-01-31 | 2004-05-06 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren zur Herstellung von einer Randstruktur um ein integriertes elektronisches Bauelement zu versiegeln, sowie ein entsprechendes Bauelement |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL159817B (nl) * | 1966-10-05 | 1979-03-15 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
NL170348C (nl) * | 1970-07-10 | 1982-10-18 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult. |
NL173110C (nl) * | 1971-03-17 | 1983-12-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht. |
JPS5710569B2 (xx) * | 1972-03-31 | 1982-02-26 | ||
NL7204741A (xx) * | 1972-04-08 | 1973-10-10 | ||
US3808058A (en) * | 1972-08-17 | 1974-04-30 | Bell Telephone Labor Inc | Fabrication of mesa diode with channel guard |
US3853633A (en) * | 1972-12-04 | 1974-12-10 | Motorola Inc | Method of making a semi planar insulated gate field-effect transistor device with implanted field |
JPS5214594B2 (xx) * | 1973-10-17 | 1977-04-22 | ||
US3962779A (en) * | 1974-01-14 | 1976-06-15 | Bell Telephone Laboratories, Incorporated | Method for fabricating oxide isolated integrated circuits |
US3904450A (en) * | 1974-04-26 | 1975-09-09 | Bell Telephone Labor Inc | Method of fabricating injection logic integrated circuits using oxide isolation |
US3899363A (en) * | 1974-06-28 | 1975-08-12 | Ibm | Method and device for reducing sidewall conduction in recessed oxide pet arrays |
US3961999A (en) * | 1975-06-30 | 1976-06-08 | Ibm Corporation | Method for forming recessed dielectric isolation with a minimized "bird's beak" problem |
-
1975
- 1975-04-16 US US05/568,636 patent/US4044454A/en not_active Expired - Lifetime
-
1976
- 1976-03-02 FR FR7606741A patent/FR2308204A1/fr active Granted
- 1976-03-08 GB GB9131/76A patent/GB1515639A/en not_active Expired
- 1976-03-15 BE BE165175A patent/BE839579A/xx not_active IP Right Cessation
- 1976-03-16 SE SE7603315A patent/SE411814B/xx unknown
- 1976-03-24 IT IT21525/76A patent/IT1064171B/it active
- 1976-04-09 NL NL7603747A patent/NL7603747A/xx unknown
- 1976-04-09 DE DE19762615438 patent/DE2615438A1/de active Pending
- 1976-04-09 JP JP51039455A patent/JPS51124386A/ja active Granted
- 1976-04-12 CH CH459476A patent/CH592959A5/xx not_active IP Right Cessation
- 1976-04-13 AU AU12957/76A patent/AU497861B2/en not_active Expired
- 1976-04-13 CA CA250,193A patent/CA1045724A/en not_active Expired
- 1976-04-19 BR BR7602384A patent/BR7602384A/pt unknown
Also Published As
Publication number | Publication date |
---|---|
JPS51124386A (en) | 1976-10-29 |
BR7602384A (pt) | 1976-10-12 |
GB1515639A (en) | 1978-06-28 |
SE7603315L (sv) | 1976-10-17 |
BE839579A (fr) | 1976-07-01 |
DE2615438A1 (de) | 1976-10-28 |
NL7603747A (nl) | 1976-10-19 |
FR2308204B1 (xx) | 1978-09-01 |
IT1064171B (it) | 1985-02-18 |
SE411814B (sv) | 1980-02-04 |
JPS5413349B2 (xx) | 1979-05-30 |
CA1045724A (en) | 1979-01-02 |
AU1295776A (en) | 1977-10-20 |
FR2308204A1 (fr) | 1976-11-12 |
AU497861B2 (en) | 1979-01-25 |
US4044454A (en) | 1977-08-30 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased | ||
PL | Patent ceased |