CA1102013A - Molecular-beam epitaxy system and method including hydrogen treatment - Google Patents
Molecular-beam epitaxy system and method including hydrogen treatmentInfo
- Publication number
- CA1102013A CA1102013A CA291,679A CA291679A CA1102013A CA 1102013 A CA1102013 A CA 1102013A CA 291679 A CA291679 A CA 291679A CA 1102013 A CA1102013 A CA 1102013A
- Authority
- CA
- Canada
- Prior art keywords
- hydrogen
- molecular
- substrate
- beam epitaxy
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000001257 hydrogen Substances 0.000 title claims abstract description 33
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000001451 molecular beam epitaxy Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 230000000704 physical effect Effects 0.000 claims 1
- 238000001179 sorption measurement Methods 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 abstract description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000002019 doping agent Substances 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000001311 chemical methods and process Methods 0.000 abstract 1
- 230000003993 interaction Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OPFJDXRVMFKJJO-ZHHKINOHSA-N N-{[3-(2-benzamido-4-methyl-1,3-thiazol-5-yl)-pyrazol-5-yl]carbonyl}-G-dR-G-dD-dD-dD-NH2 Chemical compound S1C(C=2NN=C(C=2)C(=O)NCC(=O)N[C@H](CCCN=C(N)N)C(=O)NCC(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(N)=O)=C(C)N=C1NC(=O)C1=CC=CC=C1 OPFJDXRVMFKJJO-ZHHKINOHSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229940126086 compound 21 Drugs 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
MOLECULAR-BEAM EPITAXY SYSTEM AND METHOD
INCLUDING HYDROGEN TREATMENT
Abstract of the Disclosure A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs or GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam is introduced and directed on the substrate during the epitaxy growth such that the presence of the hydrogen influences the physico-chemical process of surface interaction and therefore the quality of the epitaxy.
INCLUDING HYDROGEN TREATMENT
Abstract of the Disclosure A system and method including the use of hydrogen in the molecular beam evaporation process for epitaxy growth, such as in the formation of GaAs or GaAlAs and Sn for n-type dopant impurity. In a molecular beam epitaxy system, a hydrogen beam is introduced and directed on the substrate during the epitaxy growth such that the presence of the hydrogen influences the physico-chemical process of surface interaction and therefore the quality of the epitaxy.
Description
13 Back~round of the Invention 14 Field of the Invention The present invention relates to an improved molecular-beam epitaxy 16 system and method, and more particularly to a molecular-beam epitaxy system 17 wherein hydrogen is introduced and employed to improve the quality of the 18 epitaxy.
19 Description of the Prior Art Molecular-beam epitaxy as a method for epitaxial growth of compound 21 semiconductor films by a process involving the reaction of one or more 22 thermal molecular beams with a crystalline surface under ultra-high vacuum 23 conditions is well known in the art.
24 A complete discussion of the molecular-beam epitaxy process and the structures for carrying it out is provided by the publication Progress 26 in Solid,State Chemistry, Vol. 10 part 3, 1975 in the article '~olecular 27 Beam Epitaxy" by A. Y. Cho and J. R. Arthur at page 157.
, ~ Y0976-065 -1--, J .
19 Description of the Prior Art Molecular-beam epitaxy as a method for epitaxial growth of compound 21 semiconductor films by a process involving the reaction of one or more 22 thermal molecular beams with a crystalline surface under ultra-high vacuum 23 conditions is well known in the art.
24 A complete discussion of the molecular-beam epitaxy process and the structures for carrying it out is provided by the publication Progress 26 in Solid,State Chemistry, Vol. 10 part 3, 1975 in the article '~olecular 27 Beam Epitaxy" by A. Y. Cho and J. R. Arthur at page 157.
, ~ Y0976-065 -1--, J .
2~3 1 Another extensive discussion of the prior art of molecular-beam 2 epitaxy is found in the text Epitaxial Growth Part A of the Materials Sciènce
3 Series. The article "Molecular-Beam Epitaxy" by L. L. Chang and R. Ludeke,
4 Section 2.2, pages 37-72 presents a treatise on the theory and techniques employed in the prior art.
6 There is no teaching in the prior art relative to the use of 7 hydrogen in the molecular-beam evaporation process for epitaxy growth as 8 provided by the present inVentiQn~ and a review of the prior art will 9 indicate that such use of hydrogen as in the present invention is an unusual and unexpected technique.
11 Summary of the Invention 12 An ob~ect of the present invention is to provide an improved 13 process and system for the molecular-beam evaporatlon epitaxy growth including 14 the presence of hydrogen.
Another object of the present invention is to provide an improved 16 process and system for molecular-beam epitaxy including a hydrogen beam 17 directed onto the substrate.
18 A further object of the present invention is to provide an 19 improved molecular-beam epitaxy system and method for the formation of GaAs or GaAlAs and Sn for n-dopant impurity wherein hydrogen is used in 21 the growth process.
22 The foregoing and other objects, features and advantages of the 23 invention will be apparent from the following re particular description 24 of a preferred embodiment of the invention, as illustrated in the accompany- ing drawings.
Z~3 1 Brief Descrlption of the Drawings 2 The single figure of the drawing is a schematic illustration 3 of a molecular-beam epitaxy system including mea~s for int-oduciag a 4 beam of hydrogen.
Detailed Description of the Preferred Embodiment 6 Referring to the drawing a schematic illustration of a molecular-7 beam epitaxy system i8 shown including the basic vacuum chamber or enclosure8 10, the interior of which is maintained at an ultra-high vacuum condition 9 by vacuum pumps. A single source 12, such as Ga, Al As or Sn ls shown insldechamber lO, however more than one source of the above or other materials may 11 be generally represented by element 12 depending on the desired growth 12 application. A substrate 20 is also included in chamber 10. The structure 13 described and illustrated up to this point represents a conventional 14 molecular-beam epitaxy system well known in the prior art. It is to be appreciated that in actual practice there are several other components and 16 devices employed in the system. A more complete arrangement is illustrated 17 in FIG. 1 of the Chang and Ludeke publication in the previously mentioned 18 text E~itaxial Growth and includes such elements as source heaters, source 19 shutters, substrate holders, substrate heaters, substrate shutters, shrouds, electron guns, screens and other state-of-the-art components of a working 21 system. These elements have been omitted from the drawing for simplicity 22 since their operation and purpose are well known.
23 A novel aspect of the molecular-beam epitaxy system in the drawing 24 is the hydrogen source 14, which is used to introduce a beam of hydrogen into chamber 10 via a conduit controlled by valve 16. The hydrogen beam may 26 optionally be atomized or ionized by the atomizer or ionizer structure 18.
Yo976-065 ~3~
,:
2~13 1 ~lolecular-beam epitaxy is a term used to denote the epitaxial 2 growth of compound semiconductor films by a process involving the reaction 3 of one or more thermal molecular beams with a crystalline surface under 4 ultra-high vacuum conditions.
A molecular-beam is deflned as a directed ray of neutral molecules 6 or atoms in a vacuum system. The beam denslty is low and the vacuum 7 high so that no appreciable collisions occur among the beam molecules 8 and between the beam and the background vapor. The beam is usually 9 produced by heating a solid substance contained in an effusion cell.
The orifice dimension of the cell is small compared to the mean free 11 path of the vapor in the cell so that flow of the molecules into the 12 vacuum chamber is by effusion. Quasi-equilibrium exists in the cell so 13 that both the vapor composition and the effusion rates of the beam are 14 constant and are predictable from thermodynamics, in contrast to the case of free evaporation.
16 The beam is guided by the orifice and possibly by other slits 17 and shutters onto a substrate where the situation is usually far from 18 equilibrium. Under proper conditions, governed mainly by kinetics, the 19 beam would condense resulting in nucleation and growth.
Referring to FIG. 1, it is again stated that the conventional 21 elements employed in a typical molecular beam epitaxy system, such as ion 22 pumps, sublimation pumps, liquid nitrogen shrouds, source overns (i.e.
23 resistively heated effusion cells composed for example of graphite or 24 boron nitride), thermocouples, source shutters, substrate shutters, and substrate holders have been omitted from FIG. 1 for simplicity since the 26 operation of such system is well explained in the prior art literature.
27 The substrate 20 i6 usually a monocrystalline material that has 28 been cleaned, polished and etched. It may or may not be the same material 29 as that to be deposited, depending on whether homoepitaxy is desired.
The substrate 20 during deposition, is kept at elevated temperatures, which Y0976-065 ~4~
31~VZ~1.3 1 are usually ~ecessary for epitaxial growth. It can also be heated before 2 deposition primarily for clean$ng and afterwards for various heat treatments.
3 Source 12, ln the present application, is meant to represen;
4 either a single source material or a plurality of source materials for S producing multilayered or compound films and the aforesaid supporting 6 equipment, such as heaters, thermocoupler and shroud.
7 The present invention is directed to the improvement of the 8 molecular-beam epitaxy method and system wherein a beam of hydrogen is 9 introduced which results in improvements in material surface smoothness, electron mobility, photoluminescence and doping incorporation. The 11 hydrogen beam is provided by a hydrogen source 14 which selectlvely supplies 12 hydrogen into chamber 10 through valve 16 and orifice 18.
13 The introduction of hydrogen into the molecular-beam epitaxy 14 process produces superior results for the following reasons. One of the most serious impediments to maximum quality molecular-beam epitaxy grown 16 samples is the presence of oxygen. When oxygen gets into the sample film 17 it forms deep levels that act as traps for the charge carriers and greatly 18 affect the electronic properties of the films grown. The oxygen problem 9 i9 especially pronounced in the presence of Al, such as in the growth of GaAlAs, a commonly desired sample. To overcome the oxygen problem, the 21 present invention uses the introduction of hydrogen to remove the oxygen 22 from the surface during growth.
23 In a given application in growing two GaAlAs samples, one using 24 hydrogen according to the present invention and one without hydrogen, it was found that the sample grown in the hydrogen environment exhibited a 26 three times increase in measured carrier concentration and a five times 27 increase in electron mobility. The simultaneous increase in carrier Y0976-065 ~5~
~32C~3 1 concentration normally leads to a decrease in mobllity. A further result 2 was a ten times increase in photoluminescence.
3 In a typical embodiment of the invention in the molecular-beam 4 epitaxy process, the arrival rate of the hydrogen from source 14 of FIG. 1 into chamber 10 is controlled by valve 16 to be about 1014 to 10 6 molecules per square centimeter per second. In comparison, the Ga 7 arrival rate is 4 X 1014 atoms per square centimeter per second for a growth 8 rate of 2 Angstroms per second of GaAs. Thus, the hydrogen arrival rate 9 is maintained about twice that of the Ga. Of course, the hydrogen flow rate can be adjusted in accordance wtih the particular geometry of the 11 molecular-beam epitaxy system being employed in order to obtain the desired 12 hydrogen flow rate.
13 Whlle the invention has been particularly shown and described 14 with reference to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in form and 16 details may be made therein without departing from the spirit and scope of 17 the invention.
6 There is no teaching in the prior art relative to the use of 7 hydrogen in the molecular-beam evaporation process for epitaxy growth as 8 provided by the present inVentiQn~ and a review of the prior art will 9 indicate that such use of hydrogen as in the present invention is an unusual and unexpected technique.
11 Summary of the Invention 12 An ob~ect of the present invention is to provide an improved 13 process and system for the molecular-beam evaporatlon epitaxy growth including 14 the presence of hydrogen.
Another object of the present invention is to provide an improved 16 process and system for molecular-beam epitaxy including a hydrogen beam 17 directed onto the substrate.
18 A further object of the present invention is to provide an 19 improved molecular-beam epitaxy system and method for the formation of GaAs or GaAlAs and Sn for n-dopant impurity wherein hydrogen is used in 21 the growth process.
22 The foregoing and other objects, features and advantages of the 23 invention will be apparent from the following re particular description 24 of a preferred embodiment of the invention, as illustrated in the accompany- ing drawings.
Z~3 1 Brief Descrlption of the Drawings 2 The single figure of the drawing is a schematic illustration 3 of a molecular-beam epitaxy system including mea~s for int-oduciag a 4 beam of hydrogen.
Detailed Description of the Preferred Embodiment 6 Referring to the drawing a schematic illustration of a molecular-7 beam epitaxy system i8 shown including the basic vacuum chamber or enclosure8 10, the interior of which is maintained at an ultra-high vacuum condition 9 by vacuum pumps. A single source 12, such as Ga, Al As or Sn ls shown insldechamber lO, however more than one source of the above or other materials may 11 be generally represented by element 12 depending on the desired growth 12 application. A substrate 20 is also included in chamber 10. The structure 13 described and illustrated up to this point represents a conventional 14 molecular-beam epitaxy system well known in the prior art. It is to be appreciated that in actual practice there are several other components and 16 devices employed in the system. A more complete arrangement is illustrated 17 in FIG. 1 of the Chang and Ludeke publication in the previously mentioned 18 text E~itaxial Growth and includes such elements as source heaters, source 19 shutters, substrate holders, substrate heaters, substrate shutters, shrouds, electron guns, screens and other state-of-the-art components of a working 21 system. These elements have been omitted from the drawing for simplicity 22 since their operation and purpose are well known.
23 A novel aspect of the molecular-beam epitaxy system in the drawing 24 is the hydrogen source 14, which is used to introduce a beam of hydrogen into chamber 10 via a conduit controlled by valve 16. The hydrogen beam may 26 optionally be atomized or ionized by the atomizer or ionizer structure 18.
Yo976-065 ~3~
,:
2~13 1 ~lolecular-beam epitaxy is a term used to denote the epitaxial 2 growth of compound semiconductor films by a process involving the reaction 3 of one or more thermal molecular beams with a crystalline surface under 4 ultra-high vacuum conditions.
A molecular-beam is deflned as a directed ray of neutral molecules 6 or atoms in a vacuum system. The beam denslty is low and the vacuum 7 high so that no appreciable collisions occur among the beam molecules 8 and between the beam and the background vapor. The beam is usually 9 produced by heating a solid substance contained in an effusion cell.
The orifice dimension of the cell is small compared to the mean free 11 path of the vapor in the cell so that flow of the molecules into the 12 vacuum chamber is by effusion. Quasi-equilibrium exists in the cell so 13 that both the vapor composition and the effusion rates of the beam are 14 constant and are predictable from thermodynamics, in contrast to the case of free evaporation.
16 The beam is guided by the orifice and possibly by other slits 17 and shutters onto a substrate where the situation is usually far from 18 equilibrium. Under proper conditions, governed mainly by kinetics, the 19 beam would condense resulting in nucleation and growth.
Referring to FIG. 1, it is again stated that the conventional 21 elements employed in a typical molecular beam epitaxy system, such as ion 22 pumps, sublimation pumps, liquid nitrogen shrouds, source overns (i.e.
23 resistively heated effusion cells composed for example of graphite or 24 boron nitride), thermocouples, source shutters, substrate shutters, and substrate holders have been omitted from FIG. 1 for simplicity since the 26 operation of such system is well explained in the prior art literature.
27 The substrate 20 i6 usually a monocrystalline material that has 28 been cleaned, polished and etched. It may or may not be the same material 29 as that to be deposited, depending on whether homoepitaxy is desired.
The substrate 20 during deposition, is kept at elevated temperatures, which Y0976-065 ~4~
31~VZ~1.3 1 are usually ~ecessary for epitaxial growth. It can also be heated before 2 deposition primarily for clean$ng and afterwards for various heat treatments.
3 Source 12, ln the present application, is meant to represen;
4 either a single source material or a plurality of source materials for S producing multilayered or compound films and the aforesaid supporting 6 equipment, such as heaters, thermocoupler and shroud.
7 The present invention is directed to the improvement of the 8 molecular-beam epitaxy method and system wherein a beam of hydrogen is 9 introduced which results in improvements in material surface smoothness, electron mobility, photoluminescence and doping incorporation. The 11 hydrogen beam is provided by a hydrogen source 14 which selectlvely supplies 12 hydrogen into chamber 10 through valve 16 and orifice 18.
13 The introduction of hydrogen into the molecular-beam epitaxy 14 process produces superior results for the following reasons. One of the most serious impediments to maximum quality molecular-beam epitaxy grown 16 samples is the presence of oxygen. When oxygen gets into the sample film 17 it forms deep levels that act as traps for the charge carriers and greatly 18 affect the electronic properties of the films grown. The oxygen problem 9 i9 especially pronounced in the presence of Al, such as in the growth of GaAlAs, a commonly desired sample. To overcome the oxygen problem, the 21 present invention uses the introduction of hydrogen to remove the oxygen 22 from the surface during growth.
23 In a given application in growing two GaAlAs samples, one using 24 hydrogen according to the present invention and one without hydrogen, it was found that the sample grown in the hydrogen environment exhibited a 26 three times increase in measured carrier concentration and a five times 27 increase in electron mobility. The simultaneous increase in carrier Y0976-065 ~5~
~32C~3 1 concentration normally leads to a decrease in mobllity. A further result 2 was a ten times increase in photoluminescence.
3 In a typical embodiment of the invention in the molecular-beam 4 epitaxy process, the arrival rate of the hydrogen from source 14 of FIG. 1 into chamber 10 is controlled by valve 16 to be about 1014 to 10 6 molecules per square centimeter per second. In comparison, the Ga 7 arrival rate is 4 X 1014 atoms per square centimeter per second for a growth 8 rate of 2 Angstroms per second of GaAs. Thus, the hydrogen arrival rate 9 is maintained about twice that of the Ga. Of course, the hydrogen flow rate can be adjusted in accordance wtih the particular geometry of the 11 molecular-beam epitaxy system being employed in order to obtain the desired 12 hydrogen flow rate.
13 Whlle the invention has been particularly shown and described 14 with reference to preferred embodiments thereof, it will be understood bythose skilled in the art that the foregoing and other changes in form and 16 details may be made therein without departing from the spirit and scope of 17 the invention.
Claims (2)
1. In a molecular-beam epitaxy process for the epitaxial growth of compound semiconductor films in an enclosed vacuum chamber including at least one source material selected from the group comprising gallium, arsenic, aluminum and tin, and a substrate on which the source material is epi-taxially grown, the improvement comprising the steps of providing a source of hydrogen, and the step of introducing a controlled relatively low volume of said hydrogen from said hydrogen source through a control valve into said vacuum chamber while said source material is being epitaxially grown on said substrate for changing the physical properties of the surface of said epitaxially grown material on said sub-strate by combining with an removing any oxygen present on the surface of said epitaxially grown material on said substrate for increasing the adsorption properties of said epitaxially grown material.
2. A molecular-beam epitaxy process according to claim 1 wherein said source material includes Ga having an arrival rate on said substrate of substantially 4 x 1014 atoms per square centimeter per second and the flow rate of said hydrogen introduced into said vacuum chamber is between 1014 to 1015 molecules per square centimeter per second such that the flow rate of said hydrogen is approximately twice that of said Ga.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80082777A | 1977-05-26 | 1977-05-26 | |
| US800,827 | 1977-05-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1102013A true CA1102013A (en) | 1981-05-26 |
Family
ID=25179475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA291,679A Expired CA1102013A (en) | 1977-05-26 | 1977-11-24 | Molecular-beam epitaxy system and method including hydrogen treatment |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS53147462A (en) |
| CA (1) | CA1102013A (en) |
| DE (1) | DE2806766A1 (en) |
| FR (1) | FR2391769A1 (en) |
| GB (1) | GB1598051A (en) |
| IT (1) | IT1109159B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2511709A1 (en) * | 1981-08-21 | 1983-02-25 | Thomson Csf | Epitaxial reactor with molecular jets - using an oxygen reactive layer to give a high vacuum |
| JPS5957416A (en) * | 1982-09-27 | 1984-04-03 | Konishiroku Photo Ind Co Ltd | Method for forming compound semiconductor layer |
| GB8324779D0 (en) * | 1982-09-29 | 1983-10-19 | Nat Res Dev | Depositing film onto substrate |
| JPS59123226A (en) * | 1982-12-28 | 1984-07-17 | Fujitsu Ltd | Device for manufacturing semiconductor device |
| EP0208851B1 (en) * | 1982-12-16 | 1990-03-07 | Fujitsu Limited | Fabricating a semiconductor device by means of molecular beam epitaxy |
| JPS6135510A (en) * | 1984-07-27 | 1986-02-20 | Agency Of Ind Science & Technol | Molecular beam epitaxy growth method |
| JPS61177366A (en) * | 1985-01-31 | 1986-08-09 | Sharp Corp | Production of ultrafine particle dispersed substrate |
| JPS61214511A (en) * | 1985-03-20 | 1986-09-24 | Sharp Corp | Crystal growth method |
| JPS61218130A (en) * | 1985-03-23 | 1986-09-27 | Nippon Telegr & Teleph Corp <Ntt> | Crystal growth method of compound semiconductor |
| US4829022A (en) * | 1985-12-09 | 1989-05-09 | Nippon Telegraph And Telephone Corporation | Method for forming thin films of compound semiconductors by flow rate modulation epitaxy |
| JP2533501B2 (en) * | 1986-09-26 | 1996-09-11 | 日本電信電話株式会社 | Semiconductor epitaxial growth method |
| US4869776A (en) * | 1986-07-29 | 1989-09-26 | Sharp Kabushiki Kaisha | Method for the growth of a compound semiconductor crystal |
| JP2671360B2 (en) * | 1988-03-19 | 1997-10-29 | 富士通株式会社 | Reactive gas etching method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3615931A (en) * | 1968-12-27 | 1971-10-26 | Bell Telephone Labor Inc | Technique for growth of epitaxial compound semiconductor films |
| US3949119A (en) * | 1972-05-04 | 1976-04-06 | Atomic Energy Of Canada Limited | Method of gas doping of vacuum evaporated epitaxial silicon films |
| DE2313846A1 (en) * | 1973-03-20 | 1974-10-03 | Siemens Ag | Gallium phosphide layer formed on silicon substrate - cleaned by heating in hydrogen atmos. to remove silicon oxide film |
-
1977
- 1977-11-24 CA CA291,679A patent/CA1102013A/en not_active Expired
-
1978
- 1978-01-20 FR FR7802117A patent/FR2391769A1/en active Granted
- 1978-01-20 GB GB2458/78A patent/GB1598051A/en not_active Expired
- 1978-01-25 JP JP627678A patent/JPS53147462A/en active Granted
- 1978-02-10 IT IT20149/78A patent/IT1109159B/en active
- 1978-02-17 DE DE19782806766 patent/DE2806766A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53147462A (en) | 1978-12-22 |
| IT1109159B (en) | 1985-12-16 |
| GB1598051A (en) | 1981-09-16 |
| DE2806766A1 (en) | 1978-12-07 |
| FR2391769A1 (en) | 1978-12-22 |
| FR2391769B1 (en) | 1980-08-29 |
| IT7820149A0 (en) | 1978-02-10 |
| JPS5528544B2 (en) | 1980-07-29 |
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