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BR9701330A - Processo e aparelho para refinamento de silício - Google Patents

Processo e aparelho para refinamento de silício

Info

Publication number
BR9701330A
BR9701330A BR9701330A BR9701330A BR9701330A BR 9701330 A BR9701330 A BR 9701330A BR 9701330 A BR9701330 A BR 9701330A BR 9701330 A BR9701330 A BR 9701330A BR 9701330 A BR9701330 A BR 9701330A
Authority
BR
Brazil
Prior art keywords
silicon refinement
refinement
silicon
Prior art date
Application number
BR9701330A
Other languages
English (en)
Inventor
Hiroyuki Baba
Kazuhiro Hanazawa
Naomichi Nakamura
Masamichi Abe
Noriyoshi Yuge
Yasuhiko Sakaguchi
Yoshiei Kato
Fukuo Aratani
Original Assignee
Kawasaki Steel Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP28822096A external-priority patent/JPH09309716A/ja
Priority claimed from JP34796196A external-priority patent/JPH10182132A/ja
Application filed by Kawasaki Steel Co filed Critical Kawasaki Steel Co
Publication of BR9701330A publication Critical patent/BR9701330A/pt

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/037Purification

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
BR9701330A 1996-03-19 1997-03-18 Processo e aparelho para refinamento de silício BR9701330A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6331996 1996-03-19
JP28822096A JPH09309716A (ja) 1996-03-19 1996-10-30 シリコンの精製方法
JP34796196A JPH10182132A (ja) 1996-12-26 1996-12-26 シリコンの精製方法および精製装置

Publications (1)

Publication Number Publication Date
BR9701330A true BR9701330A (pt) 1998-11-10

Family

ID=27298127

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9701330A BR9701330A (pt) 1996-03-19 1997-03-18 Processo e aparelho para refinamento de silício

Country Status (7)

Country Link
US (1) US6231826B1 (pt)
EP (1) EP0796820B1 (pt)
CN (1) CN1167728A (pt)
BR (1) BR9701330A (pt)
CA (1) CA2200166C (pt)
DE (1) DE69702555T2 (pt)
NO (1) NO971252L (pt)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1254861B1 (en) * 2000-12-28 2008-01-30 Sumco Corporation Silicon continuous casting method
US20060048698A1 (en) * 2002-09-27 2006-03-09 Ge Energy (Usa) Llc Methods and systems for purifying elements
CN100457615C (zh) * 2003-12-04 2009-02-04 陶氏康宁公司 从冶金级硅中去除杂质以制得太阳能级硅的方法
JP2005343780A (ja) * 2004-06-03 2005-12-15 Iis Materials:Kk スクラップシリコンのリサイクル方法
JP4826936B2 (ja) * 2004-06-03 2011-11-30 株式会社 アイアイエスマテリアル 電子ビームを用いたスクラップシリコンの精錬方法
JP4947455B2 (ja) * 2005-08-16 2012-06-06 則近 山内 電子ビームを用いたシリコンの精錬方法及び装置
US7955433B2 (en) * 2007-07-26 2011-06-07 Calisolar, Inc. Method and system for forming a silicon ingot using a low-grade silicon feedstock
JP5311930B2 (ja) * 2007-08-29 2013-10-09 住友化学株式会社 シリコンの製造方法
US7572425B2 (en) * 2007-09-14 2009-08-11 General Electric Company System and method for producing solar grade silicon
CN101219789B (zh) * 2007-09-29 2010-06-16 北京航空航天大学 高能束流多晶硅提纯装置
CN101391773B (zh) * 2008-04-15 2011-01-12 南安市三晶阳光电力有限公司 弥散气体导入金属硅提纯法
KR101275218B1 (ko) 2008-08-01 2013-06-17 가부시키가이샤 아루박 금속의 정제 방법
DE112009001953T8 (de) * 2008-08-12 2013-03-21 Ulvac, Inc. Siliziumreinigungsverfahren
US8454920B2 (en) * 2008-08-15 2013-06-04 Ulvac, Inc. Silicon purification method
US7998224B2 (en) * 2008-10-21 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Removal of a sheet from a production apparatus
CN101565184B (zh) * 2009-05-22 2011-12-07 宜昌南玻硅材料有限公司 一种多晶硅生产用氢化炉装置内电极密封的方法及装置
US8475540B2 (en) * 2009-08-12 2013-07-02 Sri International Multi-stage system for reaction and melt coalescence and separation
CN101708850B (zh) * 2009-11-19 2011-09-14 大连理工大学 连续熔炼去除多晶硅中磷和硼的方法及装置
CN101708849B (zh) * 2009-11-19 2012-08-01 大连理工大学 局部蒸发去除多晶硅中硼的方法及装置
CN102120579B (zh) * 2011-01-29 2012-10-03 大连隆田科技有限公司 一种电子束高效、连续熔炼提纯多晶硅的方法及设备
CN102126725B (zh) * 2011-01-29 2012-12-19 大连隆田科技有限公司 一种电子束浅熔池熔炼提纯多晶硅的方法及设备
DE102013107685B3 (de) * 2013-07-18 2014-09-18 Ald Vacuum Technologies Gmbh Vorrichtung und Verfahren zum sequentiellen Schmelzen und Raffinieren in einem kontinuierlichen Verfahren
CN104651929B (zh) * 2013-11-22 2018-08-21 青岛昌盛日电太阳能科技股份有限公司 一种电子束熔炼多晶硅除氧与铸锭耦合的方法及设备
CN104131338B (zh) * 2014-07-17 2016-08-24 大连理工大学 电子束顶部局部加热凝固多晶硅除杂装置及多晶硅加热凝固除杂方法
CN108128779B (zh) * 2018-01-30 2020-05-19 青岛蓝光晶科新材料有限公司 一种去除多晶硅中碳、氮杂质的方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4298423A (en) 1976-12-16 1981-11-03 Semix Incorporated Method of purifying silicon
JPS54107884A (en) 1978-02-14 1979-08-24 Toshiba Corp Vacuum depositing method for silicon
US4668493A (en) 1982-06-22 1987-05-26 Harry Levin Process for making silicon
DE3241366A1 (de) 1982-11-09 1984-05-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer halbleiterbauelemente, insbesondere solarzellen, verwendbarem silicium
DE3403131A1 (de) 1984-01-30 1985-08-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum reinigen von im lichtbogenofen erzeugtem silicium
DE3635064A1 (de) 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
US4789506A (en) 1986-11-07 1988-12-06 Gas Research Institute Method of producing tubular ceramic articles
DE3806001A1 (de) 1988-02-25 1989-09-07 Siemens Ag Anordnung zum vollstaendigen entleeren von mit siliziumschmelze gefuellten quarzwannen oder -tiegeln nach dem siliziumbandziehen
JPH03215661A (ja) 1990-01-19 1991-09-20 Seiko Instr Inc イオンプレーティング装置
DE4111190A1 (de) 1991-04-06 1992-10-08 Hoechst Ceram Tec Ag Kohlenstoffkoerper mit siliziumkarbid-beschichtung und verfahren zu ihrer herstellung
US5220804A (en) 1991-12-09 1993-06-22 Isothermal Systems Research, Inc High heat flux evaporative spray cooling
US5431869A (en) 1993-01-12 1995-07-11 Council Of Scientific & Industrial Research Process for the preparation of polycrystalline silicon ingot
JPH06280004A (ja) 1993-03-24 1994-10-04 Japan Steel Works Ltd:The 電子ビーム蒸発源
JPH06345416A (ja) * 1993-06-02 1994-12-20 Kawasaki Steel Corp 電子ビーム溶解によるシリコンの精錬方法
JPH0717704A (ja) * 1993-06-24 1995-01-20 Kawasaki Steel Corp 電子ビーム溶解によるシリコンの精錬方法
JPH07309614A (ja) * 1994-03-24 1995-11-28 Kawasaki Steel Corp シリコンの精製方法
JP3140300B2 (ja) * 1994-03-29 2001-03-05 川崎製鉄株式会社 シリコンの精製方法および精製装置

Also Published As

Publication number Publication date
CN1167728A (zh) 1997-12-17
DE69702555D1 (de) 2000-08-24
EP0796820B1 (en) 2000-07-19
CA2200166A1 (en) 1997-09-19
US6231826B1 (en) 2001-05-15
NO971252D0 (no) 1997-03-18
NO971252L (no) 1997-09-22
CA2200166C (en) 2002-01-22
DE69702555T2 (de) 2000-11-23
EP0796820A1 (en) 1997-09-24

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Legal Events

Date Code Title Description
FB34 Technical and formal requirements: requirement - article 34 of industrial property law
B06A Notification to applicant to reply to the report for non-patentability or inadequacy of the application [chapter 6.1 patent gazette]
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements