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BR112017012829A2 - optoelectronic device with LEDs - Google Patents

optoelectronic device with LEDs

Info

Publication number
BR112017012829A2
BR112017012829A2 BR112017012829-2A BR112017012829A BR112017012829A2 BR 112017012829 A2 BR112017012829 A2 BR 112017012829A2 BR 112017012829 A BR112017012829 A BR 112017012829A BR 112017012829 A2 BR112017012829 A2 BR 112017012829A2
Authority
BR
Brazil
Prior art keywords
electrode layer
conductive
leds
optoelectronic device
covering
Prior art date
Application number
BR112017012829-2A
Other languages
Portuguese (pt)
Other versions
BR112017012829B1 (en
Inventor
Hugon Xavier
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aledia filed Critical Aledia
Publication of BR112017012829A2 publication Critical patent/BR112017012829A2/en
Publication of BR112017012829B1 publication Critical patent/BR112017012829B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
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    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/40—Materials therefor
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    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

a presente invenção refere-se a um diodo emissor de luz (40), incluindo: - um substrato (42) com primeira e segunda superfícies opostas (46, 44); e - elementos isolantes elétricos laterais (48) se estendendo da primeira superfície (46) para a segunda superfície (44) e definindo, dentro do substrato, primeiras partes semicondutoras ou condutoras (50), que são isoladas eletricamente entre si. o dispositivo optoeletrônico também inclui, em cada primeira parte: - um primeiro enchimento de contato condutor (52) na segunda superfície em contato com a primeira parte; e - um conjunto (d) de diodos emissores de luz se apoiando na primeira superfície e conectado eletricamente à primeira parte. o diodo emissor de luz também inclui: - uma camada de eletrodo (66) condutora, pelo menos parcialmente transparente cobrindo todos os diodos emissores de luz; - uma camada encapsulante isolante (70), pelo menos parcialmente transparente cobrindo a camada de eletrodo; e - pelo menos um segundo enchimento de contato condutor (52) conectado eletricamente à camada de eletrodo.The present invention relates to a light-emitting diode (40), including: - a substrate (42) with opposite first and second surfaces (46, 44); and lateral electrical insulating elements (48) extending from the first surface (46) to the second surface (44) and defining within the substrate first semiconductor or conductive parts (50) which are electrically isolated from each other. The optoelectronic device also includes in each first part: - a first conductive contact pad (52) on the second surface in contact with the first part; and - a set (d) of light-emitting diodes resting on the first surface and electrically connected to the first part. The LED also includes: - a conductive, at least partially transparent, electrode layer (66) covering all the LEDs; - an at least partially transparent encapsulating insulating layer (70) covering the electrode layer; and - at least a second conductive contact filler (52) electrically connected to the electrode layer.

BR112017012829-2A 2014-12-30 2015-12-24 OPTOELECTRONIC DEVICE AND MANUFACTURING PROCESS OF AN OPTOELECTRONIC DEVICE BR112017012829B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1463420A FR3031238B1 (en) 2014-12-30 2014-12-30 OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES
FR1463420 2014-12-30
PCT/FR2015/053754 WO2016108021A1 (en) 2014-12-30 2015-12-24 Optoelectronic device with light-emitting diodes

Publications (2)

Publication Number Publication Date
BR112017012829A2 true BR112017012829A2 (en) 2018-01-02
BR112017012829B1 BR112017012829B1 (en) 2022-12-06

Family

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Family Applications (1)

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BR112017012829-2A BR112017012829B1 (en) 2014-12-30 2015-12-24 OPTOELECTRONIC DEVICE AND MANUFACTURING PROCESS OF AN OPTOELECTRONIC DEVICE

Country Status (8)

Country Link
US (1) US10084012B2 (en)
EP (1) EP3241245A1 (en)
JP (1) JP6701205B2 (en)
KR (1) KR102483493B1 (en)
CN (1) CN107112344B (en)
BR (1) BR112017012829B1 (en)
FR (1) FR3031238B1 (en)
WO (1) WO2016108021A1 (en)

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US10170455B2 (en) * 2015-09-04 2019-01-01 PlayNitride Inc. Light emitting device with buffer pads
FR3053530B1 (en) 2016-06-30 2018-07-27 Aledia PIXEL OPTOELECTRONIC DEVICE WITH IMPROVED CONTRAST AND LUMINANCE
FR3053757B1 (en) 2016-07-05 2020-07-17 Valeo Vision LIGHTING AND / OR SIGNALING DEVICE FOR A MOTOR VEHICLE
KR102592276B1 (en) * 2016-07-15 2023-10-24 삼성디스플레이 주식회사 Light emitting device and fabricating method thereof
FR3055948B1 (en) 2016-09-15 2018-09-07 Valeo Vision METHOD FOR MOUNTING A MATRIX ELECTROLUMINESCENT COMPONENT ON A SUPPORT
FR3060201B1 (en) * 2016-12-12 2019-05-17 Aledia ELECTRONIC DEVICE COMPRISING A TRENCH OF ELECTRICAL INSULATION AND METHOD OF MANUFACTURING THE SAME
FR3061358B1 (en) * 2016-12-27 2021-06-11 Aledia MANUFACTURING PROCESS OF AN OPTOELECTRONIC DEVICE INCLUDING PHOTOLUMINESCENT PHOTORESIN PLOTS
FR3061357B1 (en) * 2016-12-27 2019-05-24 Aledia METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE COMPRISING AN ENGRAVING STEP ON THE REAR SIDE OF THE GROWTH SUBSTRATE
FR3061608B1 (en) * 2016-12-29 2019-05-31 Aledia OPTOELECTRONIC DEVICE WITH LIGHT EMITTING DIODES
DE102017113745A1 (en) * 2017-06-21 2018-12-27 Osram Opto Semiconductors Gmbh Semiconductor display, optoelectronic semiconductor device and method of making such
KR102459144B1 (en) 2017-11-20 2022-10-27 서울반도체 주식회사 Bulb-type lighting source
US10818816B2 (en) * 2017-11-22 2020-10-27 Advanced Semiconductor Engineering, Inc. Optical device with decreased interference
DE102017129326B4 (en) * 2017-12-08 2022-04-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Process for the manufacture of semiconductor light sources
FR3077653A1 (en) * 2018-02-06 2019-08-09 Aledia OPTOELECTRONIC DEVICE WITH ELECTRONIC COMPONENTS AT THE REAR-SIDE OF THE SUBSTRATE AND METHOD OF MANUFACTURE
KR102502223B1 (en) * 2018-04-10 2023-02-21 삼성전자주식회사 Light emitting diode apparatus and manufacturing method thereof
FR3082663B1 (en) * 2018-06-14 2022-01-07 Aledia OPTOELECTRONIC DEVICE
FR3082657B1 (en) * 2018-06-19 2021-01-29 Aledia MANUFACTURING PROCESS OF AN OPTOELECTRONIC DEVICE WITH SELF-ALIGNED LUMINOUS CONTAINMENT WALLS
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BR112017012829B1 (en) 2022-12-06

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