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BE787668A - CRUCIBLE-FREE ZONE MELTING DEVICE - Google Patents

CRUCIBLE-FREE ZONE MELTING DEVICE

Info

Publication number
BE787668A
BE787668A BE787668A BE787668A BE787668A BE 787668 A BE787668 A BE 787668A BE 787668 A BE787668 A BE 787668A BE 787668 A BE787668 A BE 787668A BE 787668 A BE787668 A BE 787668A
Authority
BE
Belgium
Prior art keywords
crucible
melting device
free zone
zone melting
free
Prior art date
Application number
BE787668A
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE787668A publication Critical patent/BE787668A/en

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/02Induction heating
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/20Heating of the molten zone by induction, e.g. hot wire technique
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/28Tubular capacitors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/02Induction heating
    • H05B6/22Furnaces without an endless core
    • H05B6/30Arrangements for remelting or zone melting
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
BE787668A 1971-08-17 1972-08-17 CRUCIBLE-FREE ZONE MELTING DEVICE BE787668A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2141188A DE2141188C3 (en) 1971-08-17 1971-08-17 Device for crucible zone melting

Publications (1)

Publication Number Publication Date
BE787668A true BE787668A (en) 1972-12-18

Family

ID=5816983

Family Applications (1)

Application Number Title Priority Date Filing Date
BE787668A BE787668A (en) 1971-08-17 1972-08-17 CRUCIBLE-FREE ZONE MELTING DEVICE

Country Status (8)

Country Link
US (1) US3769484A (en)
JP (1) JPS5522439B2 (en)
BE (1) BE787668A (en)
DE (1) DE2141188C3 (en)
FR (1) FR2149483B1 (en)
GB (1) GB1349106A (en)
IT (1) IT963844B (en)
NL (1) NL7208496A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425468C3 (en) * 1974-05-27 1979-01-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible zone melting of a crystallizable rod
DE2538812A1 (en) * 1975-09-01 1977-03-03 Wacker Chemitronic METHOD OF DOPING SEMICONDUCTOR RODS
JPS5290543A (en) * 1976-01-23 1977-07-29 Iwao Hishida Granular compositions of waxes
DE2700856A1 (en) * 1977-01-11 1978-07-13 Raphael Dr Leonhardt DEVICE FOR GROWING CRYSTALS OR THE LIKE. PROCEDURE
JPS6114114U (en) * 1984-07-02 1986-01-27 マツダ株式会社 Molding mounting clip
JP2503077B2 (en) * 1989-07-05 1996-06-05 日本碍子株式会社 Electric heater and heating method using the same
US20130112134A1 (en) * 2009-02-23 2013-05-09 Giga Industries, Inc. Method and Systems for Characterization and Production of High Quality Silicon
EP3057184B1 (en) * 2015-02-11 2017-01-25 MD Elektronik GmbH Method and device for manufacturing a cable and cable produced according to this method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1076623B (en) * 1957-11-15 1960-03-03 Siemens Ag Device for crucible-free zone drawing of rod-shaped semiconductor material
US3339130A (en) * 1964-07-02 1967-08-29 Gen Motors Corp Capacitor means
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
DE1916317C3 (en) * 1969-03-29 1975-07-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Power supply for an induction coil for crucible-free zone melting

Also Published As

Publication number Publication date
FR2149483B1 (en) 1976-01-23
JPS5522439B2 (en) 1980-06-17
DE2141188C3 (en) 1979-09-13
US3769484A (en) 1973-10-30
IT963844B (en) 1974-01-21
JPS4829607A (en) 1973-04-19
GB1349106A (en) 1974-03-27
DE2141188B2 (en) 1979-01-11
DE2141188A1 (en) 1973-02-22
NL7208496A (en) 1973-02-20
FR2149483A1 (en) 1973-03-30

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