AU2003214435A1 - A method of implanting a substrate and an ion implanter for performing the method - Google Patents

A method of implanting a substrate and an ion implanter for performing the method

Info

Publication number: AU2003214435A1
Authority: AU; Australia
Prior art keywords: implanting; substrate; ion implanter; implanter; ion
Prior art date: 2002-04-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003214435A

Other versions

AU2003214435A8 (en

Inventor

Peter Edwards

Marvin Farley

Bernard Harrison

Peter Kindersley

Adrian Murrell

Geoffrey Ryding

Takao Sakase

Shu Satoh

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Applied Materials Inc

Original Assignee

Applied Materials Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-04-10

Filing date

2003-03-21

Publication date

2003-10-27

2002-04-10 Priority claimed from US10/119,290 external-priority patent/US6956223B2/en

2002-09-23 Priority claimed from US10/251,780 external-priority patent/US6908836B2/en

2003-03-21 Application filed by Applied Materials Inc filed Critical Applied Materials Inc

2003-10-27 Publication of AU2003214435A1 publication Critical patent/AU2003214435A1/en

2003-10-27 Publication of AU2003214435A8 publication Critical patent/AU2003214435A8/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20228—Mechanical X-Y scanning
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31703—Dosimetry

Landscapes

Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Physical Vapour Deposition (AREA)
X-Ray Techniques (AREA)

AU2003214435A 2002-04-10 2003-03-21 A method of implanting a substrate and an ion implanter for performing the method Abandoned AU2003214435A1 (en)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
US10/119,290		2002-04-10
US10/119,290 US6956223B2 (en)	2002-04-10	2002-04-10	Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
US10/251,780 US6908836B2 (en)	2002-09-23	2002-09-23	Method of implanting a substrate and an ion implanter for performing the method
US10/251,780		2002-09-23
PCT/GB2003/001222 WO2003088299A2 (en)	2002-04-10	2003-03-21	A method of implanting a substrate and an ion implanter for performing the method

Publications (2)

Publication Number	Publication Date
AU2003214435A1 true AU2003214435A1 (en)	2003-10-27
AU2003214435A8 AU2003214435A8 (en)	2003-10-27

Family

ID=29253953

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2003214435A Abandoned AU2003214435A1 (en)	2002-04-10	2003-03-21	A method of implanting a substrate and an ion implanter for performing the method

Country Status (7)

Country	Link
EP (1)	EP1493171A2 (en)
JP (1)	JP4347068B2 (en)
KR (1)	KR100982850B1 (en)
CN (1)	CN100401449C (en)
AU (1)	AU2003214435A1 (en)
TW (1)	TWI319894B (en)
WO (1)	WO2003088299A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6908836B2 (en)	2002-09-23	2005-06-21	Applied Materials, Inc.	Method of implanting a substrate and an ion implanter for performing the method
US7282427B1 (en)	2006-05-04	2007-10-16	Applied Materials, Inc.	Method of implanting a substrate and an ion implanter for performing the method
US7049210B2 (en) *	2002-09-23	2006-05-23	Applied Materials, Inc.	Method of implanting a substrate and an ion implanter for performing the method
GB2409928B (en) *	2004-01-09	2007-03-21	Applied Materials Inc	Improvements relating to ion implantation
US7473909B2 (en) *	2006-12-04	2009-01-06	Axcelis Technologies, Inc.	Use of ion induced luminescence (IIL) as feedback control for ion implantation
TW201133536A (en) *	2010-03-16	2011-10-01	Kingstone Semiconductor Co Ltd	Ions injection system and method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5389793A (en) *	1983-08-15	1995-02-14	Applied Materials, Inc.	Apparatus and methods for ion implantation
US4980562A (en) *	1986-04-09	1990-12-25	Varian Associates, Inc.	Method and apparatus for high efficiency scanning in an ion implanter
US4775796A (en) *	1987-01-06	1988-10-04	Purser Kenneth H	Treating workpieces with beams
US5886356A (en) *	1997-03-17	1999-03-23	Taiwan Semiconductor Manufacturing Co., Ltd.	Automatic supervision system on the ion beam map for ion implantation process
US5898179A (en) *	1997-09-10	1999-04-27	Orion Equipment, Inc.	Method and apparatus for controlling a workpiece in a vacuum chamber
GB2382716B (en) *	1998-07-21	2003-09-03	Applied Materials Inc	Ion Implantation Beam Monitor
JP3341749B2 (en) *	1999-12-28	2002-11-05	日新電機株式会社	Ion implantation method and ion implantation apparatus
US6323497B1 (en) *	2000-06-02	2001-11-27	Varian Semiconductor Equipment Assoc.	Method and apparatus for controlling ion implantation during vacuum fluctuation

2003
- 2003-03-21 EP EP03710007A patent/EP1493171A2/en not_active Withdrawn
- 2003-03-21 CN CNB038081210A patent/CN100401449C/en not_active Expired - Fee Related
- 2003-03-21 JP JP2003585136A patent/JP4347068B2/en not_active Expired - Fee Related
- 2003-03-21 AU AU2003214435A patent/AU2003214435A1/en not_active Abandoned
- 2003-03-21 WO PCT/GB2003/001222 patent/WO2003088299A2/en active Application Filing
- 2003-03-21 KR KR1020047016179A patent/KR100982850B1/en active IP Right Grant
- 2003-04-10 TW TW092108269A patent/TWI319894B/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
EP1493171A2 (en)	2005-01-05
KR20040097335A (en)	2004-11-17
JP2005522843A (en)	2005-07-28
CN100401449C (en)	2008-07-09
WO2003088299A3 (en)	2004-01-08
WO2003088299A2 (en)	2003-10-23
JP4347068B2 (en)	2009-10-21
KR100982850B1 (en)	2010-09-16
TWI319894B (en)	2010-01-21
TW200402096A (en)	2004-02-01
AU2003214435A8 (en)	2003-10-27
CN1647236A (en)	2005-07-27

Publication	Publication Date	Title
GB2409929B (en)	2006-07-26	A method of implanting a substrate and an ion implanter for performing the method
AU2003258960A1 (en)	2004-01-19	Ion implantation device and method
AU2003296904A1 (en)	2004-05-04	Wafer coating and singulation method
GB2395354B (en)	2005-09-28	Ion implanter and a method of implanting ions
AU2003283027A1 (en)	2004-05-25	Tools for implanting an artificial vertebral disk and method
AUPR728901A0 (en)	2001-09-20	Method and system for introducing an ion into a substrate
AU2003301073A1 (en)	2004-07-14	Method and apparatus for aerodynamic ion focusing
AU2003236304A1 (en)	2003-11-11	Method of treating substrate
AU2003250666A1 (en)	2004-02-16	Stem cells for treating pancreatic damage
AU2003236307A1 (en)	2003-10-20	Plasma etching method and plasma etching device
AU2003214629A1 (en)	2003-10-27	Method and apparatus for bipolar ion generation
AU2002950769A0 (en)	2002-09-12	A method and system for inserting an electrode
TW200610035A (en)	2006-03-16	Etch and deposition control for plasma implantation
AU2003279033A1 (en)	2004-04-23	Method for reducing wafer arcing
AU2003266517A1 (en)	2005-04-11	Member for plasma etching device and method for manufacture thereof
AU2002358289A1 (en)	2004-07-22	Method of manufacturing an oxide beam
GB2403341B (en)	2006-11-29	Ion implanter and method for controlling the same
AU2003216550A1 (en)	2003-09-09	Method and apparatus for ion beam coating
AU2003231516A1 (en)	2003-12-02	Method of treating substrate
GB0228235D0 (en)	2003-01-08	Ion beam irradiation apparatus for supressing charge up of substrate and method for the same
AU2001230409A1 (en)	2001-08-14	A method and apparatus for implanting semiconductor wafer substrates
AU2003262125A1 (en)	2003-10-27	Improved method for etching vias
AU2003214435A1 (en)	2003-10-27	A method of implanting a substrate and an ion implanter for performing the method
AU2003206681A1 (en)	2003-09-04	Method of electron beam processing
AU2003227223A1 (en)	2003-10-13	Method of etching

Legal Events

Date	Code	Title	Description
2005-01-06	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase