AU2002221142A1 - Semiconductor photocathode - Google Patents
Semiconductor photocathodeInfo
- Publication number
- AU2002221142A1 AU2002221142A1 AU2002221142A AU2114202A AU2002221142A1 AU 2002221142 A1 AU2002221142 A1 AU 2002221142A1 AU 2002221142 A AU2002221142 A AU 2002221142A AU 2114202 A AU2114202 A AU 2114202A AU 2002221142 A1 AU2002221142 A1 AU 2002221142A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor photocathode
- photocathode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-384009 | 2000-12-18 | ||
| JP2000384009A JP2002184302A (en) | 2000-12-18 | 2000-12-18 | Semiconductor photoelectric cathode |
| PCT/JP2001/011095 WO2002050858A1 (en) | 2000-12-18 | 2001-12-18 | Semiconductor photocathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU2002221142A1 true AU2002221142A1 (en) | 2002-07-01 |
Family
ID=18851560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2002221142A Abandoned AU2002221142A1 (en) | 2000-12-18 | 2001-12-18 | Semiconductor photocathode |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6917058B2 (en) |
| JP (1) | JP2002184302A (en) |
| KR (1) | KR20030063435A (en) |
| CN (1) | CN1291435C (en) |
| AU (1) | AU2002221142A1 (en) |
| WO (1) | WO2002050858A1 (en) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002061458A1 (en) * | 2001-01-31 | 2002-08-08 | Hamamatsu Photonics K. K. | Electron beam detector, scanning type electron microscope, mass spectrometer, and ion detector |
| JP4002167B2 (en) | 2002-11-14 | 2007-10-31 | 浜松ホトニクス株式会社 | Photocathode |
| US20050195318A1 (en) * | 2003-02-07 | 2005-09-08 | Takahiro Komatsu | Organic information reading unit and information reading device using the same |
| JP4096877B2 (en) * | 2003-02-07 | 2008-06-04 | 松下電器産業株式会社 | Information reading element and information reading device using the same |
| JP2005032793A (en) * | 2003-07-08 | 2005-02-03 | Matsushita Electric Ind Co Ltd | Organic photoelectric converter |
| JP2005032852A (en) * | 2003-07-09 | 2005-02-03 | Matsushita Electric Ind Co Ltd | Organic photoelectric conversion device |
| EP1730795A2 (en) * | 2004-03-31 | 2006-12-13 | Matsushita Electric Industrial Co., Ltd. | Organic photoelectric conversion element utilizing an inorganic buffer layer placed between an electrode and the active material |
| JP4647955B2 (en) * | 2004-08-17 | 2011-03-09 | 浜松ホトニクス株式会社 | Photocathode plate and electron tube |
| JP4856883B2 (en) * | 2005-03-03 | 2012-01-18 | 富士フイルム株式会社 | Functional element, electrochromic element, optical device and photographing unit |
| JP2007080799A (en) * | 2005-09-16 | 2007-03-29 | Hamamatsu Photonics Kk | Photo cathode and electron tube |
| JP4939033B2 (en) * | 2005-10-31 | 2012-05-23 | 浜松ホトニクス株式会社 | Photocathode |
| KR100809427B1 (en) * | 2006-07-10 | 2008-03-05 | 삼성전기주식회사 | Photoelectric conversion device and method for manufacturing thereof |
| JP2008135350A (en) * | 2006-11-29 | 2008-06-12 | Hamamatsu Photonics Kk | Semiconductor photocathode |
| CN101205059B (en) * | 2006-12-20 | 2010-09-29 | 清华大学 | Preparation of nano-carbon tube array |
| CN101205060B (en) | 2006-12-20 | 2011-05-04 | 清华大学 | Preparation of nano-carbon tube array |
| CN101206979B (en) * | 2006-12-22 | 2010-05-19 | 清华大学 | Method of preparing field-emission cathode |
| CN101206980B (en) * | 2006-12-22 | 2010-04-14 | 清华大学 | Method of preparing field-emissive cathode |
| CN101205061B (en) * | 2006-12-22 | 2011-03-23 | 鸿富锦精密工业（深圳）有限公司 | Preparation of nano-carbon tube array |
| CN101209833B (en) * | 2006-12-27 | 2010-09-29 | 清华大学 | Preparation of carbon nano-tube array |
| CN101209832B (en) * | 2006-12-29 | 2010-05-12 | 清华大学 | Preparation of carbon nano-tube array |
| WO2010085478A1 (en) | 2009-01-22 | 2010-07-29 | Bae Systems Information And Electronic Systems Inc. | Corner cube enhanced photocathode |
| KR101010392B1 (en) * | 2009-01-29 | 2011-01-21 | 이상범 | Shading apparatus |
| US10197501B2 (en) | 2011-12-12 | 2019-02-05 | Kla-Tencor Corporation | Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors |
| US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
| US9601299B2 (en) | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
| US9426400B2 (en) | 2012-12-10 | 2016-08-23 | Kla-Tencor Corporation | Method and apparatus for high speed acquisition of moving images using pulsed illumination |
| US9478402B2 (en) * | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
| US9347890B2 (en) | 2013-12-19 | 2016-05-24 | Kla-Tencor Corporation | Low-noise sensor and an inspection system using a low-noise sensor |
| US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
| US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
| US9767986B2 (en) | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
| FR3034908B1 (en) * | 2015-04-08 | 2017-05-05 | Photonis France | MULTIBAND PHOTOCATHODE AND ASSOCIATED DETECTOR |
| US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
| US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
| US10462391B2 (en) | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
| US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
| US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
| JP6959882B2 (en) * | 2018-02-22 | 2021-11-05 | 浜松ホトニクス株式会社 | Ion detector |
| US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US10615599B2 (en) | 2018-07-12 | 2020-04-07 | John Bennett | Efficient low-voltage grid for a cathode |
| US10566168B1 (en) | 2018-08-10 | 2020-02-18 | John Bennett | Low voltage electron transparent pellicle |
| US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
| US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US11417492B2 (en) | 2019-09-26 | 2022-08-16 | Kla Corporation | Light modulated electron source |
| US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
| US20240170247A1 (en) * | 2022-11-22 | 2024-05-23 | L3Harris Technologies, Inc. | Design of lattice matched photocathodes for extended wavelengths |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3958143A (en) * | 1973-01-15 | 1976-05-18 | Varian Associates | Long-wavelength photoemission cathode |
| US5047821A (en) * | 1990-03-15 | 1991-09-10 | Intevac, Inc. | Transferred electron III-V semiconductor photocathode |
| US5680007A (en) * | 1994-12-21 | 1997-10-21 | Hamamatsu Photonics K.K. | Photomultiplier having a photocathode comprised of a compound semiconductor material |
| JP3122327B2 (en) * | 1995-02-27 | 2001-01-09 | 浜松ホトニクス株式会社 | How to use photoemission surface and how to use electron tube |
| US6005257A (en) * | 1995-09-13 | 1999-12-21 | Litton Systems, Inc. | Transmission mode photocathode with multilayer active layer for night vision and method |
| JPH09213206A (en) * | 1996-02-06 | 1997-08-15 | Hamamatsu Photonics Kk | Transmission type photoelectric surface, manufacture thereof and photoelectric transfer tube using the transmission type photoelectric surface |
| JP3806514B2 (en) * | 1998-06-22 | 2006-08-09 | 浜松ホトニクス株式会社 | Photocathode and manufacturing method thereof |
| JP3806515B2 (en) * | 1998-06-30 | 2006-08-09 | 浜松ホトニクス株式会社 | Semiconductor photocathode |
| JP2000090816A (en) | 1998-09-11 | 2000-03-31 | Daido Steel Co Ltd | Poralized electron beam generating element |
-
2000
- 2000-12-18 JP JP2000384009A patent/JP2002184302A/en active Pending
-
2001
- 2001-12-18 US US10/433,060 patent/US6917058B2/en not_active Expired - Lifetime
- 2001-12-18 KR KR10-2003-7008147A patent/KR20030063435A/en not_active Application Discontinuation
- 2001-12-18 WO PCT/JP2001/011095 patent/WO2002050858A1/en active Application Filing
- 2001-12-18 AU AU2002221142A patent/AU2002221142A1/en not_active Abandoned
- 2001-12-18 CN CNB018208274A patent/CN1291435C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1481569A (en) | 2004-03-10 |
| CN1291435C (en) | 2006-12-20 |
| KR20030063435A (en) | 2003-07-28 |
| US6917058B2 (en) | 2005-07-12 |
| US20040056279A1 (en) | 2004-03-25 |
| JP2002184302A (en) | 2002-06-28 |
| WO2002050858A1 (en) | 2002-06-27 |
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