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AU2002215216A1 - Material for forming transparent electroconductive film and method for production thereof - Google Patents

Material for forming transparent electroconductive film and method for production thereof

Info

Publication number
AU2002215216A1
AU2002215216A1 AU2002215216A AU1521602A AU2002215216A1 AU 2002215216 A1 AU2002215216 A1 AU 2002215216A1 AU 2002215216 A AU2002215216 A AU 2002215216A AU 1521602 A AU1521602 A AU 1521602A AU 2002215216 A1 AU2002215216 A1 AU 2002215216A1
Authority
AU
Australia
Prior art keywords
production
electroconductive film
transparent electroconductive
forming transparent
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002215216A
Inventor
Keiichiro Jinushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furuya Metal Co Ltd
Original Assignee
Furuya Metal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furuya Metal Co Ltd filed Critical Furuya Metal Co Ltd
Publication of AU2002215216A1 publication Critical patent/AU2002215216A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/086Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/138Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2209/00Apparatus and processes for manufacture of discharge tubes
    • H01J2209/01Generalised techniques
    • H01J2209/012Coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Non-Insulated Conductors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacture Of Switches (AREA)
  • Contacts (AREA)
AU2002215216A 2000-11-17 2001-11-15 Material for forming transparent electroconductive film and method for production thereof Abandoned AU2002215216A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000350753 2000-11-17
JP2000-350753 2000-11-17
JP2001293502A JP2002260447A (en) 2000-11-17 2001-09-26 Transparent conductive film forming material and its manufacturing method, transparent conductive film, touch panel and its manufacturing method, plasma display and its manufacturing method, solar cell and its manufacturing method, conductive film and its manufacturing method, heat ray reflective glass and its manufacturing method , Liquid crystal display device and manufacturing method thereof, inorganic electroluminescent element and manufacturing method thereof, and organic electroluminescent element and manufacturing method thereof
JP2001-293502 2001-09-26
PCT/JP2001/009982 WO2002040422A1 (en) 2000-11-17 2001-11-15 Material for forming transparent electroconductive film and method for production thereof

Publications (1)

Publication Number Publication Date
AU2002215216A1 true AU2002215216A1 (en) 2002-05-27

Family

ID=26604151

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002215216A Abandoned AU2002215216A1 (en) 2000-11-17 2001-11-15 Material for forming transparent electroconductive film and method for production thereof

Country Status (3)

Country Link
JP (1) JP2002260447A (en)
AU (1) AU2002215216A1 (en)
WO (1) WO2002040422A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7492090B2 (en) 2003-09-19 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
JP4718768B2 (en) * 2003-09-19 2011-07-06 株式会社半導体エネルギー研究所 Light emitting device
JP4574295B2 (en) * 2003-09-19 2010-11-04 株式会社半導体エネルギー研究所 Method for manufacturing light emitting device
JP5287154B2 (en) * 2007-11-08 2013-09-11 パナソニック株式会社 Circuit protection element and manufacturing method thereof
KR101082607B1 (en) 2009-10-16 2011-11-10 엘지이노텍 주식회사 Planer member for touch panel and method for manufacturing same
KR101082609B1 (en) * 2009-10-16 2011-11-15 엘지이노텍 주식회사 Planer member for touch panel and method for manufacturing same
WO2011118629A1 (en) * 2010-03-23 2011-09-29 日亜化学工業株式会社 Nitride semiconductor light emitting element
JP2016040411A (en) * 2014-08-12 2016-03-24 三菱マテリアル株式会社 Laminate film, laminate wiring film, and manufacturing method of laminate wiring film
JP6627828B2 (en) 2017-07-19 2020-01-08 日亜化学工業株式会社 Thin film manufacturing method, thin film forming material, optical thin film, and optical member
CN108227343A (en) * 2018-02-06 2018-06-29 中国科学院西安光学精密机械研究所 Camera optical heating window

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06150741A (en) * 1992-10-30 1994-05-31 Central Glass Co Ltd Formation of transparent conductive film
US5972527A (en) * 1992-12-15 1999-10-26 Idemitsu Kosan Co., Ltd. Transparent electrically conductive layer, electrically conductive transparent substrate and electrically conductive material
JP3746094B2 (en) * 1995-06-28 2006-02-15 出光興産株式会社 Target and manufacturing method thereof
JPH10190028A (en) * 1996-12-26 1998-07-21 Idemitsu Kosan Co Ltd High refractive index transparent conductive film and solar cell
EP0886295B1 (en) * 1997-06-19 2003-08-20 Sumitomo Chemical Company, Limited Front panel for plasma display
JPH1128781A (en) * 1997-07-11 1999-02-02 Mitsui Chem Inc Transparent conductive laminate and dispersion-type el element
JPH1167459A (en) * 1997-08-12 1999-03-09 Tdk Corp Organic electroluminescent element and its manufacture
CN1173216C (en) * 1997-11-03 2004-10-27 三星电子株式会社 Liquid crystal display with altered electrode arrangement
TW423006B (en) * 1998-03-31 2001-02-21 Toshiba Corp Discharge type flat display device
JP3652128B2 (en) * 1998-07-29 2005-05-25 京セラ株式会社 Method for manufacturing solar cell element

Also Published As

Publication number Publication date
JP2002260447A (en) 2002-09-13
WO2002040422A1 (en) 2002-05-23

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