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AU2001289013A1 - Current biased dual dbr grating semiconductor laser - Google Patents

Current biased dual dbr grating semiconductor laser

Info

Publication number
AU2001289013A1
AU2001289013A1 AU2001289013A AU8901301A AU2001289013A1 AU 2001289013 A1 AU2001289013 A1 AU 2001289013A1 AU 2001289013 A AU2001289013 A AU 2001289013A AU 8901301 A AU8901301 A AU 8901301A AU 2001289013 A1 AU2001289013 A1 AU 2001289013A1
Authority
AU
Australia
Prior art keywords
semiconductor laser
dbr grating
current biased
grating semiconductor
biased dual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001289013A
Inventor
James J. Coleman
S. David Roh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Illinois
Original Assignee
University of Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Illinois filed Critical University of Illinois
Publication of AU2001289013A1 publication Critical patent/AU2001289013A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H01S5/1096—Multi-wavelength lasing in a single cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
AU2001289013A 2000-09-13 2001-09-13 Current biased dual dbr grating semiconductor laser Abandoned AU2001289013A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09660611 2000-09-13
US09/660,611 US6728290B1 (en) 2000-09-13 2000-09-13 Current biased dual DBR grating semiconductor laser
PCT/US2001/028415 WO2002023684A1 (en) 2000-09-13 2001-09-13 Current biased dual dbr grating semiconductor laser

Publications (1)

Publication Number Publication Date
AU2001289013A1 true AU2001289013A1 (en) 2002-03-26

Family

ID=24650223

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001289013A Abandoned AU2001289013A1 (en) 2000-09-13 2001-09-13 Current biased dual dbr grating semiconductor laser

Country Status (4)

Country Link
US (2) US6728290B1 (en)
EP (1) EP1323218A4 (en)
AU (1) AU2001289013A1 (en)
WO (1) WO2002023684A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6728290B1 (en) * 2000-09-13 2004-04-27 The Board Of Trustees Of The University Of Illinois Current biased dual DBR grating semiconductor laser
US7012944B2 (en) * 2003-08-07 2006-03-14 National Taiwan University Of Science And Technology Structure and manufacturing method for single-wavelength and multi-wavelength distributed feedback lasers
US7113526B2 (en) * 2003-10-09 2006-09-26 Photodigm, Inc. Multi-wavelength grating-outcoupled surface emitting laser system
KR20100072534A (en) * 2008-12-22 2010-07-01 한국전자통신연구원 Semeconductor laser device
KR101638973B1 (en) * 2010-01-22 2016-07-12 삼성전자주식회사 Optical modulator and method of fabricating the same
KR101394965B1 (en) 2010-10-14 2014-05-16 한국전자통신연구원 Wavelength tunable external cavity laser generating device
GB2506439A (en) * 2012-10-01 2014-04-02 Univ Cardiff Lasing device with grating
US9270085B1 (en) 2013-11-18 2016-02-23 Nlight Photonics Corporation Multi-wavelength laser device
WO2015156781A1 (en) * 2014-04-08 2015-10-15 Pandata Research Llc Non-lasing semiconductor light source having multiple-wavelength output
CN106848835B (en) * 2016-12-22 2020-04-28 华中科技大学 DFB laser based on surface grating
CN107482477B (en) * 2017-07-28 2019-09-10 长春理工大学 The high-power distributed feedback semiconductor laser on surface and the modulation of side dielectric grating
CN111326950B (en) * 2020-03-03 2021-06-08 中国科学院半导体研究所 Dual-wavelength tunable semiconductor laser based on electrode grating

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US4226282A (en) * 1978-08-30 1980-10-07 Foster Wheeler Energy Corporation Heat exchange apparatus utilizing thermal siphon pipes
US4750801A (en) * 1985-09-30 1988-06-14 American Telephone And Telegraph Company, At&T Bell Laboratories Optical waveguide resonator filters
FR2639773B1 (en) 1988-11-25 1994-05-13 Alcatel Nv TUNABLE SEMICONDUCTOR LASER
DE69011921T2 (en) * 1989-04-04 1995-03-02 Canon Kk Semiconductor laser with variable emission wavelength and selective wavelength fitter and method for operating the same.
US5048040A (en) 1990-03-08 1991-09-10 Xerox Corporation Multiple wavelength p-n junction semiconductor laser with separated waveguides
US5003550A (en) * 1990-03-09 1991-03-26 Spectra Diode Laboratories, Inc. Integrated laser-amplifier with steerable beam
JP2804838B2 (en) * 1990-10-11 1998-09-30 国際電信電話株式会社 Tunable semiconductor laser
US5325392A (en) * 1992-03-06 1994-06-28 Nippon Telegraph And Telephone Corporation Distributed reflector and wavelength-tunable semiconductor laser
US5325380A (en) 1992-07-17 1994-06-28 Trw Inc. Dual wavelength laser emitter
US5351262A (en) 1992-09-10 1994-09-27 Bell Communications Research, Inc. Multi-stripe array grating integrated cavity laser
US5379318A (en) * 1994-01-31 1995-01-03 Telefonaktiebolaget L M Ericsson Alternating grating tunable DBR laser
FR2716303B1 (en) * 1994-02-11 1996-04-05 Franck Delorme Wavelength tunable distributed Bragg reflector laser with selectively activated virtual diffraction gratings.
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US6636547B2 (en) * 2000-04-28 2003-10-21 Photodigm, Inc. Multiple grating-outcoupled surface-emitting lasers
US6728290B1 (en) * 2000-09-13 2004-04-27 The Board Of Trustees Of The University Of Illinois Current biased dual DBR grating semiconductor laser
FR2830991B1 (en) * 2001-10-15 2004-01-30 Cit Alcatel RESONANT OPTICAL CAVITY ON A CONTINUOUS FREQUENCY RANGE

Also Published As

Publication number Publication date
US6728290B1 (en) 2004-04-27
WO2002023684A1 (en) 2002-03-21
EP1323218A4 (en) 2007-04-25
US7339968B2 (en) 2008-03-04
EP1323218A1 (en) 2003-07-02
US20050180479A1 (en) 2005-08-18

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