AU2001243289A1 - Method and apparatus for mixed-mode optical proximity correction - Google Patents
Method and apparatus for mixed-mode optical proximity correctionInfo
- Publication number
- AU2001243289A1 AU2001243289A1 AU2001243289A AU4328901A AU2001243289A1 AU 2001243289 A1 AU2001243289 A1 AU 2001243289A1 AU 2001243289 A AU2001243289 A AU 2001243289A AU 4328901 A AU4328901 A AU 4328901A AU 2001243289 A1 AU2001243289 A1 AU 2001243289A1
- Authority
- AU
- Australia
- Prior art keywords
- mixed
- mode optical
- optical proximity
- proximity correction
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Semiconductor Lasers (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/514,551 US6584609B1 (en) | 2000-02-28 | 2000-02-28 | Method and apparatus for mixed-mode optical proximity correction |
US09514551 | 2000-02-28 | ||
PCT/US2001/006144 WO2001065315A2 (en) | 2000-02-28 | 2001-02-26 | Method and apparatus for mixed-mode optical proximity correction |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001243289A1 true AU2001243289A1 (en) | 2001-09-12 |
Family
ID=24047688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001243289A Abandoned AU2001243289A1 (en) | 2000-02-28 | 2001-02-26 | Method and apparatus for mixed-mode optical proximity correction |
Country Status (5)
Country | Link |
---|---|
US (2) | US6584609B1 (en) |
EP (1) | EP1264213B1 (en) |
JP (1) | JP4947533B2 (en) |
AU (1) | AU2001243289A1 (en) |
WO (1) | WO2001065315A2 (en) |
Families Citing this family (91)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6301697B1 (en) | 1999-04-30 | 2001-10-09 | Nicolas B. Cobb | Streamlined IC mask layout optical and process correction through correction reuse |
US6467076B1 (en) * | 1999-04-30 | 2002-10-15 | Nicolas Bailey Cobb | Method and apparatus for submicron IC design |
US6440612B1 (en) | 1999-09-01 | 2002-08-27 | Micron Technology, Inc. | Field correction of overlay error |
US6425113B1 (en) | 2000-06-13 | 2002-07-23 | Leigh C. Anderson | Integrated verification and manufacturability tool |
US7412676B2 (en) | 2000-06-13 | 2008-08-12 | Nicolas B Cobb | Integrated OPC verification tool |
US6516459B1 (en) | 2000-07-10 | 2003-02-04 | Mentor Graphics Corporation | Integrated circuit design correction using fragment correspondence |
US6430737B1 (en) | 2000-07-10 | 2002-08-06 | Mentor Graphics Corp. | Convergence technique for model-based optical and process correction |
US20020156639A1 (en) * | 2001-02-27 | 2002-10-24 | Akira Ishikawa | Business method for a digital photolithography system |
US7392168B2 (en) * | 2001-03-13 | 2008-06-24 | Yuri Granik | Method of compensating for etch effects in photolithographic processing |
US6574784B1 (en) | 2001-06-14 | 2003-06-03 | George P. Lippincott | Short edge management in rule based OPC |
US6964031B2 (en) * | 2001-09-29 | 2005-11-08 | Kabushiki Kaisha Toshiba | Mask pattern generating method and manufacturing method of semiconductor apparatus |
JP3615182B2 (en) * | 2001-11-26 | 2005-01-26 | 株式会社東芝 | Optical proximity effect correction method and optical proximity effect correction system |
JP3592666B2 (en) | 2001-12-04 | 2004-11-24 | 株式会社東芝 | Exposure mask pattern correction method, program, mask pattern formation method, and semiconductor device manufacturing method |
US6763514B2 (en) * | 2001-12-12 | 2004-07-13 | Numerical Technologies, Inc. | Method and apparatus for controlling rippling during optical proximity correction |
US7085698B2 (en) * | 2001-12-18 | 2006-08-01 | Synopsys, Inc. | Method for providing flexible and dynamic reporting capability using simulation tools |
JP4138318B2 (en) * | 2002-01-08 | 2008-08-27 | 株式会社ルネサステクノロジ | Lithography process margin evaluation apparatus, lithography process margin evaluation method, and lithography process margin evaluation program |
US7013439B2 (en) | 2002-01-31 | 2006-03-14 | Juan Andres Torres Robles | Contrast based resolution enhancing technology |
US7293249B2 (en) | 2002-01-31 | 2007-11-06 | Juan Andres Torres Robles | Contrast based resolution enhancement for photolithographic processing |
US6778275B2 (en) * | 2002-02-20 | 2004-08-17 | Micron Technology, Inc. | Aberration mark and method for estimating overlay error and optical aberrations |
JP2003322945A (en) * | 2002-05-01 | 2003-11-14 | Mitsubishi Electric Corp | Correcting device of layout pattern data |
US6931613B2 (en) | 2002-06-24 | 2005-08-16 | Thomas H. Kauth | Hierarchical feature extraction for electrical interaction calculations |
DE10233205B4 (en) * | 2002-07-17 | 2006-06-08 | Infineon Technologies Ag | Method for correcting local loading effects when etching photomasks |
US6973633B2 (en) | 2002-07-24 | 2005-12-06 | George Lippincott | Caching of lithography and etch simulation results |
KR100583697B1 (en) * | 2002-07-26 | 2006-05-25 | 에이에스엠엘 마스크툴즈 비.브이. | Automatic Optical Proximity CorrectionOPC Rule Generation |
US7172838B2 (en) * | 2002-09-27 | 2007-02-06 | Wilhelm Maurer | Chromeless phase mask layout generation |
US6857109B2 (en) | 2002-10-18 | 2005-02-15 | George P. Lippincott | Short edge smoothing for enhanced scatter bar placement |
US7082596B2 (en) * | 2002-11-27 | 2006-07-25 | Synopsys, Inc. | Simulation-based selection of evaluation points for model-based optical proximity correction |
US6854104B2 (en) * | 2002-11-27 | 2005-02-08 | Lsi Logic Corporation | First approximation for OPC significant speed-up |
US6928634B2 (en) | 2003-01-02 | 2005-08-09 | Yuri Granik | Matrix optical process correction |
US7318214B1 (en) | 2003-06-19 | 2008-01-08 | Invarium, Inc. | System and method for reducing patterning variability in integrated circuit manufacturing through mask layout corrections |
US20050015740A1 (en) * | 2003-07-18 | 2005-01-20 | Mentor Graphics Corp. | Design for manufacturability |
US20050234684A1 (en) * | 2004-04-19 | 2005-10-20 | Mentor Graphics Corp. | Design for manufacturability |
US7043712B2 (en) * | 2003-09-09 | 2006-05-09 | International Business Machines Corporation | Method for adaptive segment refinement in optical proximity correction |
US6973636B2 (en) * | 2003-10-17 | 2005-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of defining forbidden pitches for a lithography exposure tool |
US7073162B2 (en) | 2003-10-31 | 2006-07-04 | Mentor Graphics Corporation | Site control for OPC |
JP4357287B2 (en) * | 2003-12-18 | 2009-11-04 | 株式会社東芝 | Correction guide generation method, pattern creation method, mask manufacturing method, semiconductor device manufacturing method, and program |
JP2005227666A (en) | 2004-02-16 | 2005-08-25 | Toshiba Corp | Method for correcting mask data, and method for manufacturing semiconductor device |
US7536660B2 (en) | 2004-02-24 | 2009-05-19 | Konstantinos Adam | OPC simulation model using SOCS decomposition of edge fragments |
US7539954B2 (en) | 2004-02-24 | 2009-05-26 | Konstantinos Adam | OPC simulation model using SOCS decomposition of edge fragments |
US7861207B2 (en) | 2004-02-25 | 2010-12-28 | Mentor Graphics Corporation | Fragmentation point and simulation site adjustment for resolution enhancement techniques |
US7234130B2 (en) | 2004-02-25 | 2007-06-19 | James Word | Long range corrections in integrated circuit layout designs |
US7251806B2 (en) * | 2004-04-09 | 2007-07-31 | Synopsys, Inc. | Model-based two-dimensional interpretation filtering |
US7065738B1 (en) * | 2004-05-04 | 2006-06-20 | Advanced Micro Devices, Inc. | Method of verifying an optical proximity correction (OPC) model |
WO2005111874A2 (en) | 2004-05-07 | 2005-11-24 | Mentor Graphics Corporation | Integrated circuit layout design methodology with process variation bands |
US7240305B2 (en) | 2004-06-02 | 2007-07-03 | Lippincott George P | OPC conflict identification and edge priority system |
US7266800B2 (en) * | 2004-06-04 | 2007-09-04 | Invarium, Inc. | Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes |
US7275225B2 (en) * | 2004-06-04 | 2007-09-25 | Invarium, Inc. | Correcting design data for manufacture |
US7463367B2 (en) * | 2004-07-13 | 2008-12-09 | Micron Technology, Inc. | Estimating overlay error and optical aberrations |
US7588868B2 (en) * | 2004-10-06 | 2009-09-15 | Cadence Design Systems, Inc. | Method and system for reducing the impact of across-wafer variations on critical dimension measurements |
US7627837B2 (en) * | 2004-10-15 | 2009-12-01 | Takumi Technology Corp. | Model-based pattern characterization to generate rules for rule-model-based hybrid optical proximity correction |
US7459248B2 (en) | 2005-02-24 | 2008-12-02 | James Word | Performing OPC on structures with virtual edges |
US7721246B2 (en) * | 2005-02-24 | 2010-05-18 | Synopsys, Inc. | Method and apparatus for quickly determining the effect of placing an assist feature at a location in a layout |
JP2006235327A (en) * | 2005-02-25 | 2006-09-07 | Toshiba Corp | Method for generating mask pattern data/mask inspection data, and method for manufacturing/inspecting photomask |
US7493587B2 (en) | 2005-03-02 | 2009-02-17 | James Word | Chromeless phase shifting mask for integrated circuits using interior region |
US7743359B2 (en) * | 2005-05-02 | 2010-06-22 | Cadence Design Systems, Inc. | Apparatus and method for photomask design |
JP4828870B2 (en) * | 2005-06-09 | 2011-11-30 | 株式会社東芝 | Method and program for creating evaluation pattern |
US20070083846A1 (en) * | 2005-07-28 | 2007-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optimized modules' proximity correction |
US7657852B2 (en) | 2005-08-16 | 2010-02-02 | Pulsic Limited | System and technique of pattern matching and pattern replacement |
US7434199B2 (en) | 2005-09-27 | 2008-10-07 | Nicolas Bailey Cobb | Dense OPC |
US7265361B2 (en) * | 2005-09-28 | 2007-09-04 | Applied Materials, Inc. | Beam blanker driver system and method |
US7962868B2 (en) | 2005-10-28 | 2011-06-14 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device using optical proximity correction for the optical lithography |
KR100673014B1 (en) * | 2005-10-28 | 2007-01-24 | 삼성전자주식회사 | Method of fabricating photomask |
US7506285B2 (en) | 2006-02-17 | 2009-03-17 | Mohamed Al-Imam | Multi-dimensional analysis for predicting RET model accuracy |
US7584450B2 (en) * | 2006-02-17 | 2009-09-01 | Synopsys, Inc. | Method and apparatus for using a database to quickly identify and correct a manufacturing problem area in a layout |
WO2008020265A1 (en) * | 2006-08-16 | 2008-02-21 | Koninklijke Philips Electronics N.V. | Method and apparatus for designing an integrated circuit |
KR100763538B1 (en) * | 2006-08-29 | 2007-10-05 | 삼성전자주식회사 | Method of forming mask pattern and method of forming fine pattern using the same in a semiconductor device fabricating |
US20080077907A1 (en) * | 2006-09-21 | 2008-03-27 | Kulkami Anand P | Neural network-based system and methods for performing optical proximity correction |
US8230379B2 (en) * | 2006-10-20 | 2012-07-24 | Kabushiki Kaisha Toshiba | Layout generating method for semiconductor integrated circuits |
JP4956365B2 (en) * | 2006-10-20 | 2012-06-20 | 株式会社東芝 | Design layout creation method, semiconductor device manufacturing method, and computer-readable medium |
US7617475B2 (en) * | 2006-11-13 | 2009-11-10 | United Microelectronics Corp. | Method of manufacturing photomask and method of repairing optical proximity correction |
EP2097788A1 (en) * | 2006-12-21 | 2009-09-09 | Nxp B.V. | A method and system for identifying weak points in an integrated circuit design |
US20080178140A1 (en) * | 2007-01-18 | 2008-07-24 | United Microelectronics Corp. | Method for correcting photomask pattern |
US7739650B2 (en) | 2007-02-09 | 2010-06-15 | Juan Andres Torres Robles | Pre-bias optical proximity correction |
KR100828026B1 (en) * | 2007-04-05 | 2008-05-08 | 삼성전자주식회사 | Method of correcting a layout of a design pattern for an integrated circuit and apparatus for performing the same |
US7805699B2 (en) | 2007-10-11 | 2010-09-28 | Mentor Graphics Corporation | Shape-based photolithographic model calibration |
US7886243B1 (en) * | 2007-12-27 | 2011-02-08 | Cadence Design Systems, Inc. | System and method for using rules-based analysis to enhance models-based analysis |
US7765021B2 (en) * | 2008-01-16 | 2010-07-27 | International Business Machines Corporation | Method to check model accuracy during wafer patterning simulation |
US20090258302A1 (en) * | 2008-04-10 | 2009-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sub-resolution assist feature of a photomask |
US20090265148A1 (en) * | 2008-04-16 | 2009-10-22 | Synopsys, Inc. | Modeling a sector-polarized-illumination source in an optical lithography system |
US8042069B2 (en) * | 2008-08-07 | 2011-10-18 | United Microelectronics Corp. | Method for selectively amending layout patterns |
US8176446B2 (en) | 2008-09-11 | 2012-05-08 | International Business Machines Corporation | Method for compensating for variations in structures of an integrated circuit |
US7900169B2 (en) * | 2009-01-06 | 2011-03-01 | International Business Machines Corporation | OPC model calibration process |
US8103984B1 (en) * | 2009-02-23 | 2012-01-24 | Cadence Design Systems, Inc. | System and method for compressed design phase contour data |
US9507250B2 (en) * | 2009-12-17 | 2016-11-29 | International Business Machines Corporation | Optical proximity correction for improved electrical characteristics |
JP5477132B2 (en) * | 2010-04-09 | 2014-04-23 | 富士通セミコンダクター株式会社 | Mask pattern manufacturing apparatus, mask pattern manufacturing method, and mask manufacturing method |
CN102478761B (en) * | 2010-11-25 | 2014-01-22 | 无锡华润上华半导体有限公司 | Photomask manufacturing method and system |
US8464194B1 (en) * | 2011-12-16 | 2013-06-11 | International Business Machines Corporation | Machine learning approach to correct lithographic hot-spots |
CN103309149B (en) * | 2013-06-08 | 2016-03-23 | 上海华力微电子有限公司 | Optical proximity correction method |
KR102386548B1 (en) * | 2014-08-19 | 2022-04-14 | 인텔 코포레이션 | Corner rounding correction for electron beam (ebeam) direct write system |
CN106537556B (en) * | 2014-08-19 | 2021-09-07 | 英特尔公司 | Cross-scan proximity correction using electron beam universal cutter |
JP6508504B1 (en) * | 2017-06-19 | 2019-05-08 | 大日本印刷株式会社 | Shape correction apparatus and shape correction method for figure pattern |
Family Cites Families (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US67074A (en) * | 1867-07-23 | Improvement in quartz-mills | ||
US11A (en) * | 1836-08-10 | |||
US10A (en) * | 1836-08-10 | Gtttlslto andi | ||
US3A (en) * | 1836-08-11 | Thomas blanchard | ||
US2324169A (en) * | 1940-08-05 | 1943-07-13 | Simms Motor Units Ltd | Distributor ignition for internal combustion engines |
US2344436A (en) * | 1940-08-06 | 1944-03-14 | Wilbur G Laird | Floating roof storage apparatus for volatile liquids |
US3210560A (en) * | 1961-04-17 | 1965-10-05 | Westinghouse Electric Corp | Semiconductor device |
US4231811A (en) | 1979-09-13 | 1980-11-04 | Intel Corporation | Variable thickness self-aligned photoresist process |
EP0043863B1 (en) | 1980-07-10 | 1984-05-16 | International Business Machines Corporation | Process for compensating the proximity effect in electron beam projection devices |
US4456371A (en) | 1982-06-30 | 1984-06-26 | International Business Machines Corporation | Optical projection printing threshold leveling arrangement |
US4812962A (en) | 1987-04-09 | 1989-03-14 | Harris Corp. | Area feature sorting mechanism for neighborhood-based proximity correction in lithography processing of integrated circuit patterns |
US4895780A (en) | 1987-05-13 | 1990-01-23 | General Electric Company | Adjustable windage method and mask for correction of proximity effect in submicron photolithography |
US4902899A (en) | 1987-06-01 | 1990-02-20 | International Business Machines Corporation | Lithographic process having improved image quality |
US5182718A (en) | 1989-04-04 | 1993-01-26 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for writing a pattern on a semiconductor sample based on a resist pattern corrected for proximity effects resulting from direct exposure of the sample by a charged-particle beam or light |
JP2830330B2 (en) | 1989-04-04 | 1998-12-02 | 松下電器産業株式会社 | Proximity effect correction method |
JP2881892B2 (en) | 1990-01-16 | 1999-04-12 | 富士通株式会社 | Projection exposure mask |
US5051598A (en) | 1990-09-12 | 1991-09-24 | International Business Machines Corporation | Method for correcting proximity effects in electron beam lithography |
IL97022A0 (en) | 1991-01-24 | 1992-03-29 | Ibm Israel | Partitioning method for e-beam lithography |
US5208124A (en) | 1991-03-19 | 1993-05-04 | Hewlett-Packard Company | Method of making a mask for proximity effect correction in projection lithography |
US5242770A (en) | 1992-01-16 | 1993-09-07 | Microunity Systems Engineering, Inc. | Mask for photolithography |
AU4277893A (en) | 1992-04-06 | 1993-11-08 | Microunity Systems Engineering, Inc. | Method for forming a lithographic pattern in a process for manufacturing semiconductor devices |
US5256505A (en) | 1992-08-21 | 1993-10-26 | Microunity Systems Engineering | Lithographical mask for controlling the dimensions of resist patterns |
US6007310A (en) | 1993-11-23 | 1999-12-28 | Sarcos, Lc | Volumetric pump with sterility seal |
US5424154A (en) | 1993-12-10 | 1995-06-13 | Intel Corporation | Lithographic emhancement method and apparatus for randomly spaced structures |
US5447810A (en) | 1994-02-09 | 1995-09-05 | Microunity Systems Engineering, Inc. | Masks for improved lithographic patterning for off-axis illumination lithography |
US5636002A (en) | 1994-04-29 | 1997-06-03 | Lucent Technologies Inc. | Auxiliary mask features for enhancing the resolution of photolithography |
GB2291219B (en) | 1994-07-05 | 1998-07-01 | Nec Corp | Photo-mask fabrication and use |
US5573890A (en) | 1994-07-18 | 1996-11-12 | Advanced Micro Devices, Inc. | Method of optical lithography using phase shift masking |
JPH08297692A (en) | 1994-09-16 | 1996-11-12 | Mitsubishi Electric Corp | Device and method for correcting optical proximity, and pattern forming method |
JP3273456B2 (en) | 1995-02-24 | 2002-04-08 | アルプス電気株式会社 | Motor driven slide type variable resistor |
US5682323A (en) | 1995-03-06 | 1997-10-28 | Lsi Logic Corporation | System and method for performing optical proximity correction on macrocell libraries |
JP3409493B2 (en) | 1995-03-13 | 2003-05-26 | ソニー株式会社 | Mask pattern correction method and correction device |
US5553273A (en) | 1995-04-17 | 1996-09-03 | International Business Machines Corporation | Vertex minimization in a smart optical proximity correction system |
US5663893A (en) | 1995-05-03 | 1997-09-02 | Microunity Systems Engineering, Inc. | Method for generating proximity correction features for a lithographic mask pattern |
US5657235A (en) * | 1995-05-03 | 1997-08-12 | International Business Machines Corporation | Continuous scale optical proximity correction by mask maker dose modulation |
US5663017A (en) | 1995-06-07 | 1997-09-02 | Lsi Logic Corporation | Optical corrective techniques with reticle formation and reticle stitching to provide design flexibility |
JP3331822B2 (en) | 1995-07-17 | 2002-10-07 | ソニー株式会社 | Mask pattern correction method, mask using the same, exposure method, and semiconductor device |
JP2917879B2 (en) | 1995-10-31 | 1999-07-12 | 日本電気株式会社 | Photomask and manufacturing method thereof |
US6185727B1 (en) * | 1995-12-12 | 2001-02-06 | International Business Machines Corporation | Design verification for asymmetric phase shift mask layouts |
JP3934719B2 (en) * | 1995-12-22 | 2007-06-20 | 株式会社東芝 | Optical proximity correction method |
JP3469422B2 (en) | 1996-02-23 | 2003-11-25 | 株式会社東芝 | Charged beam writing method and writing apparatus |
US5972541A (en) | 1996-02-27 | 1999-10-26 | Lsi Logic Corporation | Reticle and method of design to correct pattern for depth of focus problems |
US5723233A (en) | 1996-02-27 | 1998-03-03 | Lsi Logic Corporation | Optical proximity correction method and apparatus |
US6269472B1 (en) * | 1996-02-27 | 2001-07-31 | Lsi Logic Corporation | Optical proximity correction method and apparatus |
US5705301A (en) | 1996-02-27 | 1998-01-06 | Lsi Logic Corporation | Performing optical proximity correction with the aid of design rule checkers |
US5862058A (en) | 1996-05-16 | 1999-01-19 | International Business Machines Corporation | Optical proximity correction method and system |
US5707765A (en) | 1996-05-28 | 1998-01-13 | Microunity Systems Engineering, Inc. | Photolithography mask using serifs and method thereof |
US5740068A (en) | 1996-05-30 | 1998-04-14 | International Business Machines Corporation | Fidelity enhancement of lithographic and reactive-ion-etched images by optical proximity correction |
US5885734A (en) | 1996-08-15 | 1999-03-23 | Micron Technology, Inc. | Process for modifying a hierarchical mask layout |
JP3518275B2 (en) | 1996-09-06 | 2004-04-12 | 松下電器産業株式会社 | Photomask and pattern forming method |
US5994002A (en) | 1996-09-06 | 1999-11-30 | Matsushita Electric Industrial Co., Ltd. | Photo mask and pattern forming method |
JP3551660B2 (en) | 1996-10-29 | 2004-08-11 | ソニー株式会社 | Exposure pattern correction method, exposure pattern correction apparatus, and exposure method |
US5847959A (en) | 1997-01-28 | 1998-12-08 | Etec Systems, Inc. | Method and apparatus for run-time correction of proximity effects in pattern generation |
US5821014A (en) | 1997-02-28 | 1998-10-13 | Microunity Systems Engineering, Inc. | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask |
US5920487A (en) | 1997-03-03 | 1999-07-06 | Motorola Inc. | Two dimensional lithographic proximity correction using DRC shape functions |
US5900340A (en) | 1997-03-03 | 1999-05-04 | Motorola, Inc. | One dimensional lithographic proximity correction using DRC shape functions |
JPH10282635A (en) * | 1997-04-09 | 1998-10-23 | Sony Corp | Method for correcting pattern data, electron beam writing method, photomask and its manufacture, exposure method, semiconductor device and its production and pattern data correcting device |
US6078738A (en) | 1997-05-08 | 2000-06-20 | Lsi Logic Corporation | Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization |
JP3713359B2 (en) * | 1997-05-19 | 2005-11-09 | マスプロ電工株式会社 | Level measuring instrument |
US6282696B1 (en) | 1997-08-15 | 2001-08-28 | Lsi Logic Corporation | Performing optical proximity correction with the aid of design rule checkers |
US6370679B1 (en) | 1997-09-17 | 2002-04-09 | Numerical Technologies, Inc. | Data hierarchy layout correction and verification method and apparatus |
US6243855B1 (en) * | 1997-09-30 | 2001-06-05 | Kabushiki Kaisha Toshiba | Mask data design method |
US5958635A (en) | 1997-10-20 | 1999-09-28 | Motorola, Inc. | Lithographic proximity correction through subset feature modification |
JP3101594B2 (en) | 1997-11-06 | 2000-10-23 | キヤノン株式会社 | Exposure method and exposure apparatus |
US6114071A (en) | 1997-11-24 | 2000-09-05 | Asml Masktools Netherlands B.V. | Method of fine feature edge tuning with optically-halftoned mask |
US6081658A (en) | 1997-12-31 | 2000-06-27 | Avant! Corporation | Proximity correction system for wafer lithography |
JP2002501634A (en) | 1998-03-17 | 2002-01-15 | エーエスエムエル マスクツールズ ネザーランズ ビー.ヴィ. | Method of forming linear pattern of less than quarter exposure wavelength using high transmittance halftone phase shift mask |
JP2000020564A (en) | 1998-06-29 | 2000-01-21 | Mitsubishi Electric Corp | Device for correcting layout pattern data, method for correcting layout pattern data, manufacture of semiconductor device using the method, and recording medium having recorded manufacturing program of semiconductor device thereon |
JP3241010B2 (en) | 1998-11-18 | 2001-12-25 | 日本電気株式会社 | Optical proximity correction method for semiconductor manufacturing process |
JP2000162758A (en) * | 1998-11-30 | 2000-06-16 | Matsushita Electric Ind Co Ltd | Method for correcting optical proximity effect |
US6301697B1 (en) | 1999-04-30 | 2001-10-09 | Nicolas B. Cobb | Streamlined IC mask layout optical and process correction through correction reuse |
US6249904B1 (en) * | 1999-04-30 | 2001-06-19 | Nicolas Bailey Cobb | Method and apparatus for submicron IC design using edge fragment tagging to correct edge placement distortion |
US6467076B1 (en) * | 1999-04-30 | 2002-10-15 | Nicolas Bailey Cobb | Method and apparatus for submicron IC design |
-
2000
- 2000-02-28 US US09/514,551 patent/US6584609B1/en not_active Expired - Lifetime
-
2001
- 2001-02-26 WO PCT/US2001/006144 patent/WO2001065315A2/en active Application Filing
- 2001-02-26 EP EP01916242.9A patent/EP1264213B1/en not_active Expired - Lifetime
- 2001-02-26 JP JP2001563954A patent/JP4947533B2/en not_active Expired - Lifetime
- 2001-02-26 AU AU2001243289A patent/AU2001243289A1/en not_active Abandoned
-
2002
- 2002-12-20 US US10/327,454 patent/US6988259B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1264213A2 (en) | 2002-12-11 |
US20030097647A1 (en) | 2003-05-22 |
WO2001065315A3 (en) | 2002-04-04 |
WO2001065315A2 (en) | 2001-09-07 |
EP1264213B1 (en) | 2015-09-23 |
US6988259B2 (en) | 2006-01-17 |
US6584609B1 (en) | 2003-06-24 |
JP2003525470A (en) | 2003-08-26 |
JP4947533B2 (en) | 2012-06-06 |
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