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AU2001243170A1 - Iii-nitride optoelectronic device - Google Patents

Iii-nitride optoelectronic device

Info

Publication number
AU2001243170A1
AU2001243170A1 AU2001243170A AU4317001A AU2001243170A1 AU 2001243170 A1 AU2001243170 A1 AU 2001243170A1 AU 2001243170 A AU2001243170 A AU 2001243170A AU 4317001 A AU4317001 A AU 4317001A AU 2001243170 A1 AU2001243170 A1 AU 2001243170A1
Authority
AU
Australia
Prior art keywords
iii
optoelectronic device
nitride optoelectronic
nitride
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001243170A
Inventor
Manijeh Razeghi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MP Technologies LLC
Original Assignee
MP Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MP Technologies LLC filed Critical MP Technologies LLC
Publication of AU2001243170A1 publication Critical patent/AU2001243170A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H01S2304/025—MOMBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/06—LPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
AU2001243170A 2000-03-15 2001-02-16 Iii-nitride optoelectronic device Abandoned AU2001243170A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/526,134 US6459096B1 (en) 1998-01-14 2000-03-15 Multi quantum well grinsch detector
US09526134 2000-03-15
PCT/US2001/005060 WO2001069683A1 (en) 2000-03-15 2001-02-16 Iii-nitride optoelectronic device

Publications (1)

Publication Number Publication Date
AU2001243170A1 true AU2001243170A1 (en) 2001-09-24

Family

ID=24096054

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001243170A Abandoned AU2001243170A1 (en) 2000-03-15 2001-02-16 Iii-nitride optoelectronic device

Country Status (3)

Country Link
US (2) US6459096B1 (en)
AU (1) AU2001243170A1 (en)
WO (1) WO2001069683A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352944B1 (en) * 1999-02-10 2002-03-05 Micron Technology, Inc. Method of depositing an aluminum nitride comprising layer over a semiconductor substrate
JP2001119102A (en) * 1999-10-15 2001-04-27 Toyoda Gosei Co Ltd Iii nitride compound semiconductor laser diode
JP2002076522A (en) * 2000-09-01 2002-03-15 Nec Corp Nitride semiconductor laser
US6780239B2 (en) * 2000-10-19 2004-08-24 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US6645885B2 (en) * 2001-09-27 2003-11-11 The National University Of Singapore Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
US7119359B2 (en) * 2002-12-05 2006-10-10 Research Foundation Of The City University Of New York Photodetectors and optically pumped emitters based on III-nitride multiple-quantum-well structures
EP1714359A4 (en) * 2004-02-05 2008-09-17 Univ Oklahoma 110 oriented group iv-vi semiconductor structure, and method for making and using the same
US7180066B2 (en) * 2004-11-24 2007-02-20 Chang-Hua Qiu Infrared detector composed of group III-V nitrides
JP5743127B2 (en) * 2005-06-01 2015-07-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Method and apparatus for growth and fabrication of semipolar (Ga, Al, In, B) N thin films, heterostructures and devices
KR101294518B1 (en) * 2006-02-14 2013-08-07 엘지이노텍 주식회사 Nitride semiconductor light-emitting device and manufacturing method thereof
CN101521258B (en) * 2009-03-27 2013-07-31 华灿光电股份有限公司 Method for improving LED external quantum efficiency
US8218595B2 (en) 2010-05-28 2012-07-10 Corning Incorporated Enhanced planarity in GaN edge emitting lasers
JP6255939B2 (en) * 2012-11-27 2018-01-10 日亜化学工業株式会社 Nitride semiconductor laser device
US20200287069A1 (en) * 2019-03-08 2020-09-10 Xuanqi Huang Nonpolar iii-nitrides solar cell device
CN110568216B (en) * 2019-09-10 2021-12-28 南京邮电大学 Homogeneous integrated optoelectronic device
JP7563696B2 (en) 2020-04-14 2024-10-08 旭化成株式会社 Method for manufacturing ultraviolet laser diode and ultraviolet laser diode

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0448406A3 (en) * 1990-03-23 1992-02-26 The Furukawa Electric Co., Ltd. Semiconductor laser diode
US5367177A (en) * 1991-07-17 1994-11-22 The United States Of America As Represented By The Secretary Of The Air Force Wavelength selective heterojunction field effect transistor
US5550854A (en) * 1994-11-29 1996-08-27 Lucent Technologies Inc. Binary stratified structures for periodically pumped semiconductor lasers
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
US5740192A (en) 1994-12-19 1998-04-14 Kabushiki Kaisha Toshiba Semiconductor laser
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
JPH10150219A (en) * 1996-11-15 1998-06-02 Toyoda Gosei Co Ltd Group iii nitride semiconductor laser element
US6040590A (en) * 1996-12-12 2000-03-21 California Institute Of Technology Semiconductor device with electrostatic control
JP3433038B2 (en) * 1997-02-24 2003-08-04 株式会社東芝 Semiconductor light emitting device
US5926726A (en) 1997-09-12 1999-07-20 Sdl, Inc. In-situ acceptor activation in group III-v nitride compound semiconductors
JP2000150959A (en) * 1998-11-18 2000-05-30 Hitachi Ltd Gallium nitride compound semiconductor light emitting element

Also Published As

Publication number Publication date
WO2001069683A1 (en) 2001-09-20
US6459096B1 (en) 2002-10-01
US6605485B2 (en) 2003-08-12
US20020175324A1 (en) 2002-11-28

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