Nothing Special   »   [go: up one dir, main page]

ATE514095T1 - Volumenlebensdauermessung - Google Patents

Volumenlebensdauermessung

Info

Publication number
ATE514095T1
ATE514095T1 AT07291091T AT07291091T ATE514095T1 AT E514095 T1 ATE514095 T1 AT E514095T1 AT 07291091 T AT07291091 T AT 07291091T AT 07291091 T AT07291091 T AT 07291091T AT E514095 T1 ATE514095 T1 AT E514095T1
Authority
AT
Austria
Prior art keywords
semiconductor structure
measuring
measuring position
microwave
measuring probe
Prior art date
Application number
AT07291091T
Other languages
English (en)
Inventor
Frederic Allibert
Oleg Kononchuk
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE514095T1 publication Critical patent/ATE514095T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
AT07291091T 2007-09-11 2007-09-11 Volumenlebensdauermessung ATE514095T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07291091A EP2037288B1 (de) 2007-09-11 2007-09-11 Volumenlebensdauermessung

Publications (1)

Publication Number Publication Date
ATE514095T1 true ATE514095T1 (de) 2011-07-15

Family

ID=39204756

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07291091T ATE514095T1 (de) 2007-09-11 2007-09-11 Volumenlebensdauermessung

Country Status (7)

Country Link
US (1) US8008929B2 (de)
EP (1) EP2037288B1 (de)
JP (1) JP4990397B2 (de)
KR (1) KR101138701B1 (de)
CN (1) CN101802629B (de)
AT (1) ATE514095T1 (de)
WO (1) WO2009033629A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5686348B2 (ja) * 2010-02-15 2015-03-18 国立大学法人東京農工大学 光誘起キャリアライフタイム測定方法、光入射効率測定方法、光誘起キャリアライフタイム測定装置、および光入射効率測定装置
US8912799B2 (en) * 2011-11-10 2014-12-16 Semiconductor Physics Laboratory Co., Ltd. Accurate measurement of excess carrier lifetime using carrier decay method
CN102736011B (zh) * 2012-07-10 2014-05-07 中国科学院微电子研究所 确定AlGaN/GaN基异质结沟道载流子寿命的方法
FR3000549B1 (fr) 2012-12-27 2015-04-24 Centre Nat Rech Scient Procede et dispositif pour caracteriser un milieu fluide a l'aide d'un substrat semi-conducteur
US20140199822A1 (en) * 2013-01-15 2014-07-17 Micron Technology, Inc. Methods of forming semiconductor device structures including an insulative material on a semiconductive material, and related semiconductor device structures and semiconductor devices
JP6080101B2 (ja) 2013-02-15 2017-02-15 信越半導体株式会社 シリコン基板の再結合ライフタイム測定方法
US20140253137A1 (en) * 2013-03-08 2014-09-11 Macronix International Co., Ltd. Test pattern design for semiconductor devices and method of utilizing thereof
EP2851696B1 (de) 2013-09-24 2016-04-20 Imec Verfahren zur Extraktion von Rekombinationsmerkmalen an metallisierten Halbleiteroberflächen
CN103743950B (zh) * 2013-12-27 2017-01-11 安徽省大富重工技术有限公司 一种天线相位的测试系统
CN103884977B (zh) * 2014-03-06 2016-02-17 北京大学 一种预测半导体器件nbti寿命及其涨落的方法
CN103901335B (zh) * 2014-04-22 2016-03-30 哈尔滨工业大学 一种半导体少数载流子寿命分布的红外偏振光学成像检测方法与系统
CN104101855A (zh) * 2014-07-24 2014-10-15 上海华力微电子有限公司 监控探针卡漏电的方法及探针卡漏电监控系统
JP2016046352A (ja) * 2014-08-21 2016-04-04 株式会社東芝 半導体デバイス検査装置、半導体デバイス検査方法および半導体デバイス製造方法
CN104266960B (zh) * 2014-10-09 2017-09-15 广州市昆德科技有限公司 扫描式微波反射法载流子复合寿命测试系统及测试方法
JP6704275B2 (ja) * 2016-03-28 2020-06-03 株式会社ディスコ デバイスウエーハの評価方法
CN107868981B (zh) * 2016-09-28 2020-09-29 清华大学 一种金属铂的半金属化合物及其制备方法
CN112366146A (zh) * 2020-11-05 2021-02-12 天津中环领先材料技术有限公司 一种晶圆片的寿命测试方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4218143A (en) * 1979-01-22 1980-08-19 The United States Of America As Represented By The Secretary Of The Navy Lattice matching measurement device
US4809196A (en) * 1986-04-10 1989-02-28 International Business Machines Corporation Method for designating/sorting semiconductor wafers according to predicted oxygen precipitation behavior
JP2702807B2 (ja) * 1990-08-09 1998-01-26 東芝セラミックス株式会社 半導体中の深い不純物準位の測定方法及びその装置
US5406214A (en) * 1990-12-17 1995-04-11 Semilab Felvezeto Fizikai Lab, Rt Method and apparatus for measuring minority carrier lifetime in semiconductor materials
CN1063159A (zh) * 1992-01-23 1992-07-29 中国科学院上海技术物理研究所 测量半导体非平衡载流子寿命的新方法
JPH06151538A (ja) * 1992-02-03 1994-05-31 Leo Giken:Kk 半導体ウエハの評価方法及びその装置
JPH077060A (ja) * 1993-06-18 1995-01-10 Fujitsu Ltd 半導体装置の評価方法及び装置
JP3670051B2 (ja) * 1995-06-06 2005-07-13 株式会社神戸製鋼所 半導体試料のキャリアのライフタイム測定方法及びその装置
US6346821B1 (en) * 1998-03-27 2002-02-12 Infineon Technologies Ag Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices
HU227170B1 (en) * 2000-02-17 2010-09-28 Semilab Felvezetoe Fiz Lab Rt Surface passivation method and arrangement for measuring life time of minority carrier of semiconductors
JP4020810B2 (ja) * 2002-03-29 2007-12-12 株式会社神戸製鋼所 半導体キャリアの寿命測定装置，その方法

Also Published As

Publication number Publication date
EP2037288B1 (de) 2011-06-22
US20100188094A1 (en) 2010-07-29
EP2037288A1 (de) 2009-03-18
CN101802629A (zh) 2010-08-11
US8008929B2 (en) 2011-08-30
KR101138701B1 (ko) 2012-04-19
KR20100057079A (ko) 2010-05-28
CN101802629B (zh) 2014-01-22
WO2009033629A1 (en) 2009-03-19
JP2010539678A (ja) 2010-12-16
JP4990397B2 (ja) 2012-08-01

Similar Documents

Publication Publication Date Title
ATE514095T1 (de) Volumenlebensdauermessung
JP6068183B2 (ja) シリコン薄膜測定方法、シリコン薄膜欠陥検出方法、及びシリコン薄膜欠陥検出装置
JP2010539678A5 (de)
CN201340400Y (zh) 带有一体化散热装置的手持式x射线荧光光谱仪
EA201370011A1 (ru) Системы и способы измерения потребления электрической энергии в сооружении и системы и способы их калибровки
TW200951430A (en) Method of determining defects in a substrate and apparatus for exposing a substrate in a lithographic process
PT1982202E (pt) Fonte luminosa estendida e modulável electricamente, dispositivo de medição para caracterizar um semicondutor compreendendo uma fonte deste tipo
JP2015510595A5 (de)
TWI448888B (zh) 用於電源供應單元之測試裝置
EP2538204B1 (de) Lichtinduziertes verfahren zur messung der lebensdauer von lichtinduzierten trägern, verfahren zur messung der lichteinfallseffizienz, vorrichtung zur messung der lebensdauer von lichtinduzierten trägern und vorrichtung zur messung der lichteinfallseffizienz
TW201140090A (en) Apparatus for measuring minority carrier lifetime and method for using the same
JP5674369B2 (ja) 非接触式直流電圧検出器
KR101248139B1 (ko) 태양전지 신뢰성 시험용 광량 측정 장치와 방법, 및 태양전지 신뢰성 시험 장치와 방법
Seeneevassen et al. Quartz crystal microbalance based UVA and UVC sensor
WO2013065398A1 (ja) 太陽電池関連試料測定システム
JP2007006608A5 (de)
WO2011095752A8 (fr) Methode de determination sans contact de caracteristiques d'un photoconvertisseur
JP2009079960A5 (de)
JP2006234738A (ja) 半導体薄膜のキャリア移動度の測定用基板、測定装置及び測定方法
JP2005049131A (ja) Ｌｅｄチップの光学特性測定装置及びｌｅｄチップの光学特性測定方法
CN202793742U (zh) 一种光学元件光谱测量装置
ATE514938T1 (de) Vorrichtung zur spektroskopischen charakterisierung von an einer elektrode gebildeten elektrochemischen reaktionsprodukten
TW202102843A (zh) 使用電暈放電源的場偏置非線性光學計量
JP2017173147A (ja) 半導体検査装置及び半導体検査方法
CN206076712U (zh) 一种小型激光器系统

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties