ATE406467T1 - Plasmabehandlungsvorrichtung mit kombinierter anoden/ionen quelle - Google Patents
Plasmabehandlungsvorrichtung mit kombinierter anoden/ionen quelleInfo
- Publication number
- ATE406467T1 ATE406467T1 AT98912095T AT98912095T ATE406467T1 AT E406467 T1 ATE406467 T1 AT E406467T1 AT 98912095 T AT98912095 T AT 98912095T AT 98912095 T AT98912095 T AT 98912095T AT E406467 T1 ATE406467 T1 AT E406467T1
- Authority
- AT
- Austria
- Prior art keywords
- electrode member
- process chamber
- central aperture
- active surface
- adjacent
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 title 1
- 238000009832 plasma treatment Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0047—Activation or excitation of reactive gases outside the coating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Treatment Of Fiber Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/842,480 US5855745A (en) | 1997-04-23 | 1997-04-23 | Plasma processing system utilizing combined anode/ ion source |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE406467T1 true ATE406467T1 (de) | 2008-09-15 |
Family
ID=25287417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT98912095T ATE406467T1 (de) | 1997-04-23 | 1998-03-27 | Plasmabehandlungsvorrichtung mit kombinierter anoden/ionen quelle |
Country Status (7)
Country | Link |
---|---|
US (1) | US5855745A (de) |
EP (1) | EP0977904B1 (de) |
JP (1) | JP2001522509A (de) |
AT (1) | ATE406467T1 (de) |
AU (1) | AU6589398A (de) |
DE (1) | DE69839937D1 (de) |
WO (1) | WO1998048073A1 (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6090457A (en) * | 1997-10-21 | 2000-07-18 | Sanyo Vaccum Industries Co. Ltd. | Process of making a thin film |
JP3048555B2 (ja) * | 1997-10-21 | 2000-06-05 | 三容真空工業株式会社 | 薄膜の製造方法とその装置 |
US6287435B1 (en) | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
KR100667729B1 (ko) | 1998-11-10 | 2007-01-11 | 삼성전자주식회사 | 결함 관리를 위한 여유 공간과 그 관리 정보를 갖는 디스크, 여유 공간 할당 방법과 결함 관리 방법 |
US6408408B1 (en) | 1998-11-10 | 2002-06-18 | Samsung Electronics Co., Ltd. | Recording medium having spare area for defect management and information on defect management, and method of allocating spare area and method of managing defects |
JP3930183B2 (ja) * | 1999-02-02 | 2007-06-13 | 三菱化学株式会社 | Cvd装置および磁気記録媒体の製造方法 |
JP3749178B2 (ja) * | 1999-11-18 | 2006-02-22 | 東京エレクトロン株式会社 | 切頭円錐形スパッタリングターゲットのためのターゲット利用率の高い磁気構成 |
US6299740B1 (en) | 2000-01-19 | 2001-10-09 | Veeco Instrument, Inc. | Sputtering assembly and target therefor |
US6887356B2 (en) * | 2000-11-27 | 2005-05-03 | Cabot Corporation | Hollow cathode target and methods of making same |
AUPR179500A0 (en) | 2000-11-30 | 2000-12-21 | Saintech Pty Limited | Ion source |
US20030209198A1 (en) * | 2001-01-18 | 2003-11-13 | Andrew Shabalin | Method and apparatus for neutralization of ion beam using ac or dc ion source |
TWI253478B (en) * | 2001-11-14 | 2006-04-21 | Mitsubishi Heavy Ind Ltd | Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus |
US7659209B2 (en) * | 2001-11-14 | 2010-02-09 | Canon Anelva Corporation | Barrier metal film production method |
US6707051B2 (en) * | 2002-07-10 | 2004-03-16 | Wintek Corporation | RF loaded line type capacitive plasma source for broad range of operating gas pressure |
US20040112735A1 (en) * | 2002-12-17 | 2004-06-17 | Applied Materials, Inc. | Pulsed magnetron for sputter deposition |
US7166199B2 (en) * | 2002-12-18 | 2007-01-23 | Cardinal Cg Company | Magnetron sputtering systems including anodic gas distribution systems |
AU2003290429A1 (en) * | 2002-12-25 | 2004-07-22 | Casio Computer Co., Ltd. | Optical dna sensor, dna reading apparatus, identification method of dna and manufacturing method of optical dna sensor |
US7038389B2 (en) * | 2003-05-02 | 2006-05-02 | Applied Process Technologies, Inc. | Magnetron plasma source |
US7030390B2 (en) * | 2003-09-09 | 2006-04-18 | Guardian Industries Corp. | Ion source with electrode kept at potential(s) other than ground by zener diode(s), thyristor(s) and/or the like |
US7305311B2 (en) * | 2005-04-22 | 2007-12-04 | Advanced Energy Industries, Inc. | Arc detection and handling in radio frequency power applications |
US20080000768A1 (en) * | 2006-06-30 | 2008-01-03 | Stimson Bradley O | Electrically Coupled Target Panels |
US7514935B2 (en) * | 2006-09-13 | 2009-04-07 | Advanced Energy Industries, Inc. | System and method for managing power supplied to a plasma chamber |
US7850828B2 (en) * | 2006-09-15 | 2010-12-14 | Cardinal Cg Company | Enhanced virtual anode |
WO2008048339A1 (en) * | 2006-10-18 | 2008-04-24 | Chameleon Scientific Corporation | Apparatus and method for nano plasma deposition |
WO2008118203A2 (en) * | 2006-10-19 | 2008-10-02 | Applied Process Technologies, Inc. | Closed drift ion source |
JP5172135B2 (ja) * | 2006-11-10 | 2013-03-27 | オリジン電気株式会社 | 真空装置 |
US8133359B2 (en) | 2007-11-16 | 2012-03-13 | Advanced Energy Industries, Inc. | Methods and apparatus for sputtering deposition using direct current |
US9039871B2 (en) | 2007-11-16 | 2015-05-26 | Advanced Energy Industries, Inc. | Methods and apparatus for applying periodic voltage using direct current |
US8044594B2 (en) * | 2008-07-31 | 2011-10-25 | Advanced Energy Industries, Inc. | Power supply ignition system and method |
US8395078B2 (en) * | 2008-12-05 | 2013-03-12 | Advanced Energy Industries, Inc | Arc recovery with over-voltage protection for plasma-chamber power supplies |
PL2648209T3 (pl) * | 2009-02-17 | 2018-06-29 | Solvix Gmbh | Urządzenie zasilające do obróbki plazmowej |
JP5363177B2 (ja) * | 2009-04-16 | 2013-12-11 | オリジン電気株式会社 | 真空負荷用電源 |
CN102474971B (zh) | 2009-08-07 | 2015-03-04 | 株式会社京三制作所 | 脉冲调制高频功率控制方法以及脉冲调制高频电源装置 |
US9502222B2 (en) * | 2010-04-16 | 2016-11-22 | Viavi Solutions Inc. | Integrated anode and activated reactive gas source for use in magnetron sputtering device |
DE102010031568B4 (de) * | 2010-07-20 | 2014-12-11 | TRUMPF Hüttinger GmbH + Co. KG | Arclöschanordnung und Verfahren zum Löschen von Arcs |
US8552665B2 (en) | 2010-08-20 | 2013-10-08 | Advanced Energy Industries, Inc. | Proactive arc management of a plasma load |
EP2509100B1 (de) * | 2011-04-06 | 2019-08-14 | Viavi Solutions Inc. | Integrierte Anode und aktivierte reaktive Gasquelle zur Verwendung in einer Magnetron-Sputtervorrichtung |
JP6244103B2 (ja) | 2012-05-04 | 2017-12-06 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | 反応性スパッタ堆積のための方法および反応性スパッタ堆積システム |
RU2555692C2 (ru) * | 2013-06-17 | 2015-07-10 | Владислав Викторович Сагалович | Способ ионно-плазменного прецизионного азотирования поверхностей металлических изделий |
RU2528537C1 (ru) * | 2013-07-18 | 2014-09-20 | Открытое акционерное общество "Ижевский завод нефтяного машиностроения" (ОАО "Ижнефтемаш") | Способ ионно-плазменного азотирования длинномерной стальной детали |
EP3254296B1 (de) | 2015-02-03 | 2021-04-14 | Cardinal CG Company | Sputtervorrichtung mit einem gasverteilungssystem |
EP3285278A1 (de) * | 2016-08-16 | 2018-02-21 | FEI Company | Mit einem plasmareiniger verwendeter magnet |
US10490396B1 (en) | 2017-03-28 | 2019-11-26 | Thermo Finnigan Llc | Ion source with mixed magnets |
RU2752334C1 (ru) * | 2020-05-08 | 2021-07-26 | Федеральное государственное бюджетное учреждение науки Институт физического материаловедения Сибирского отделения Российской академии наук | Газоразрядное распылительное устройство на основе планарного магнетрона с ионным источником |
RU2754915C1 (ru) * | 2020-10-27 | 2021-09-08 | федеральное государственное автономное образовательное учреждение высшего образования "Пермский национальный исследовательский политехнический университет" | Способ плазменной обработки металлических изделий |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3952228A (en) * | 1974-11-18 | 1976-04-20 | Ion Tech, Inc. | Electron-bombardment ion source including alternating potential means for cyclically varying the focussing of ion beamlets |
US3956666A (en) * | 1975-01-27 | 1976-05-11 | Ion Tech, Inc. | Electron-bombardment ion sources |
US3969646A (en) * | 1975-02-10 | 1976-07-13 | Ion Tech, Inc. | Electron-bombardment ion source including segmented anode of electrically conductive, magnetic material |
US4259145A (en) * | 1979-06-29 | 1981-03-31 | International Business Machines Corporation | Ion source for reactive ion etching |
US4457825A (en) * | 1980-05-16 | 1984-07-03 | Varian Associates, Inc. | Sputter target for use in a sputter coating source |
US4416755A (en) * | 1981-04-03 | 1983-11-22 | Xerox Corporation | Apparatus and method for producing semiconducting films |
US4446403A (en) * | 1982-05-26 | 1984-05-01 | International Business Machines Corporation | Compact plug connectable ion source |
US4541890A (en) * | 1982-06-01 | 1985-09-17 | International Business Machines Corporation | Hall ion generator for working surfaces with a low energy high intensity ion beam |
US4481062A (en) * | 1982-09-02 | 1984-11-06 | Kaufman Harold R | Electron bombardment ion sources |
JPH0627323B2 (ja) * | 1983-12-26 | 1994-04-13 | 株式会社日立製作所 | スパツタリング方法及びその装置 |
US4761218A (en) * | 1984-05-17 | 1988-08-02 | Varian Associates, Inc. | Sputter coating source having plural target rings |
US4523971A (en) * | 1984-06-28 | 1985-06-18 | International Business Machines Corporation | Programmable ion beam patterning system |
WO1986006922A1 (en) * | 1985-05-09 | 1986-11-20 | The Commonwealth Of Australia | Plasma generator |
US4588490A (en) * | 1985-05-22 | 1986-05-13 | International Business Machines Corporation | Hollow cathode enhanced magnetron sputter device |
JPH0763056B2 (ja) * | 1986-08-06 | 1995-07-05 | 三菱電機株式会社 | 薄膜形成装置 |
US4862032A (en) * | 1986-10-20 | 1989-08-29 | Kaufman Harold R | End-Hall ion source |
JPS63274762A (ja) * | 1987-05-01 | 1988-11-11 | Ulvac Corp | 反応蒸着膜の形成装置 |
US4824544A (en) * | 1987-10-29 | 1989-04-25 | International Business Machines Corporation | Large area cathode lift-off sputter deposition device |
US4873467A (en) * | 1988-05-23 | 1989-10-10 | Kaufman Harold R | Ion source with particular grid assembly |
US5122431A (en) * | 1988-09-14 | 1992-06-16 | Fujitsu Limited | Thin film formation apparatus |
DE3834318A1 (de) * | 1988-10-08 | 1990-04-12 | Leybold Ag | Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe |
US4925542A (en) * | 1988-12-08 | 1990-05-15 | Trw Inc. | Plasma plating apparatus and method |
US5045166A (en) * | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
US5069770A (en) * | 1990-07-23 | 1991-12-03 | Eastman Kodak Company | Sputtering process employing an enclosed sputtering target |
US5334302A (en) * | 1991-11-15 | 1994-08-02 | Tokyo Electron Limited | Magnetron sputtering apparatus and sputtering gun for use in the same |
-
1997
- 1997-04-23 US US08/842,480 patent/US5855745A/en not_active Expired - Lifetime
-
1998
- 1998-03-27 DE DE69839937T patent/DE69839937D1/de not_active Expired - Fee Related
- 1998-03-27 AU AU65893/98A patent/AU6589398A/en not_active Abandoned
- 1998-03-27 JP JP54602098A patent/JP2001522509A/ja active Pending
- 1998-03-27 WO PCT/US1998/006084 patent/WO1998048073A1/en active Application Filing
- 1998-03-27 AT AT98912095T patent/ATE406467T1/de not_active IP Right Cessation
- 1998-03-27 EP EP98912095A patent/EP0977904B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0977904A4 (de) | 2005-12-21 |
EP0977904B1 (de) | 2008-08-27 |
WO1998048073A1 (en) | 1998-10-29 |
DE69839937D1 (de) | 2008-10-09 |
JP2001522509A (ja) | 2001-11-13 |
US5855745A (en) | 1999-01-05 |
EP0977904A1 (de) | 2000-02-09 |
AU6589398A (en) | 1998-11-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification |
Ref document number: 0977904 Country of ref document: EP |
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REN | Ceased due to non-payment of the annual fee |