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ATE384335T1 - Chipbefestigung - Google Patents

Chipbefestigung

Info

Publication number
ATE384335T1
ATE384335T1 AT04740528T AT04740528T ATE384335T1 AT E384335 T1 ATE384335 T1 AT E384335T1 AT 04740528 T AT04740528 T AT 04740528T AT 04740528 T AT04740528 T AT 04740528T AT E384335 T1 ATE384335 T1 AT E384335T1
Authority
AT
Austria
Prior art keywords
adhesive layer
carrier tape
die
singulated
cured
Prior art date
Application number
AT04740528T
Other languages
English (en)
Inventor
Adrian Boyle
David Gillen
Maria Farsari
Original Assignee
Xsil Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xsil Technology Ltd filed Critical Xsil Technology Ltd
Application granted granted Critical
Publication of ATE384335T1 publication Critical patent/ATE384335T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/274Manufacturing methods by blanket deposition of the material of the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83191Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
  • Laser Beam Processing (AREA)
  • Light Receiving Elements (AREA)
AT04740528T 2003-07-03 2004-07-01 Chipbefestigung ATE384335T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0315623A GB2404280B (en) 2003-07-03 2003-07-03 Die bonding

Publications (1)

Publication Number Publication Date
ATE384335T1 true ATE384335T1 (de) 2008-02-15

Family

ID=27741543

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04740528T ATE384335T1 (de) 2003-07-03 2004-07-01 Chipbefestigung

Country Status (11)

Country Link
US (1) US7989320B2 (de)
EP (1) EP1642332B1 (de)
JP (1) JP4625804B2 (de)
KR (1) KR101167894B1 (de)
CN (1) CN1816908B (de)
AT (1) ATE384335T1 (de)
DE (1) DE602004011343T2 (de)
GB (1) GB2404280B (de)
MY (1) MY141475A (de)
TW (1) TWI245376B (de)
WO (1) WO2005004226A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
US6676878B2 (en) 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
AU2003211581A1 (en) * 2002-03-12 2003-09-22 Hamamatsu Photonics K.K. Method of cutting processed object
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
CN100485901C (zh) 2002-03-12 2009-05-06 浜松光子学株式会社 基板的分割方法
TWI520269B (zh) 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
US8685838B2 (en) 2003-03-12 2014-04-01 Hamamatsu Photonics K.K. Laser beam machining method
JP4532358B2 (ja) * 2005-06-15 2010-08-25 株式会社ディスコ 半導体チップの製造方法
DE102005048153B4 (de) 2005-10-06 2010-08-05 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils mit Halbleiterchip und Klebstofffolie
DE102005048826B3 (de) * 2005-10-10 2007-04-12 Infineon Technologies Ag Halbleiterbauteil mit Halbleiterchip und Klebstofffolie und Verfahren zur Herstellung des Halbleiterchips und Halbleiterbauteils
DE102005050127B3 (de) * 2005-10-18 2007-05-16 Infineon Technologies Ag Verfahren zum Aufbringen einer Struktur aus Fügematerial auf die Rückseiten von Halbleiterchips
JP2008235398A (ja) * 2007-03-19 2008-10-02 Disco Abrasive Syst Ltd デバイスの製造方法
GB2458475B (en) * 2008-03-18 2011-10-26 Xsil Technology Ltd Processing of multilayer semiconductor wafers
JP2009231779A (ja) * 2008-03-25 2009-10-08 Lintec Corp 半導体装置の製造方法
US20100167471A1 (en) 2008-12-30 2010-07-01 Stmicroelectronics Asia Pacific Pte. Ltd. Reducing warpage for fan-out wafer level packaging
US20110156239A1 (en) * 2009-12-29 2011-06-30 Stmicroelectronics Asia Pacific Pte Ltd. Method for manufacturing a fan-out embedded panel level package
US8502367B2 (en) 2010-09-29 2013-08-06 Stmicroelectronics Pte Ltd. Wafer-level packaging method using composite material as a base
US20160133486A1 (en) 2014-11-07 2016-05-12 International Business Machines Corporation Double Layer Release Temporary Bond and Debond Processes and Systems
US10475764B2 (en) * 2014-12-26 2019-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Die bonder and methods of using the same
JP6726215B2 (ja) * 2015-04-28 2020-07-22 ネーデルランドセ・オルガニサティ・フォール・トゥーヘパスト−ナトゥールウェテンスハッペライク・オンデルズーク・テーエヌオー フラッシュランプおよびマスクを使用して複数のチップをはんだ付けするための装置および方法
KR102194727B1 (ko) * 2015-04-29 2020-12-23 삼성전기주식회사 인덕터
KR101797728B1 (ko) 2016-03-11 2017-11-16 삼성디스플레이 주식회사 디스플레이 장치
US10269756B2 (en) * 2017-04-21 2019-04-23 Invensas Bonding Technologies, Inc. Die processing
US10607861B2 (en) 2017-11-28 2020-03-31 Nxp B.V. Die separation using adhesive-layer laser scribing
US10727219B2 (en) 2018-02-15 2020-07-28 Invensas Bonding Technologies, Inc. Techniques for processing devices
US11742314B2 (en) 2020-03-31 2023-08-29 Adeia Semiconductor Bonding Technologies Inc. Reliable hybrid bonded apparatus
CN113784513A (zh) * 2021-08-10 2021-12-10 信维通信(江苏)有限公司 一种线路板成型方法

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3637377A (en) * 1966-11-03 1972-01-25 Teeg Research Inc Method for making a pattern on a support member by means of actinic radiation sensitive element
BE756807A (fr) * 1969-09-29 1971-03-29 Motorola Inc Procede pour la gravure non preferentielle du silicium par un melange gazeux, et melange gazeux pour cette gravure
US3811182A (en) * 1972-03-31 1974-05-21 Ibm Object handling fixture, system, and process
US3866398A (en) * 1973-12-20 1975-02-18 Texas Instruments Inc In-situ gas-phase reaction for removal of laser-scribe debris
US4331504A (en) * 1981-06-25 1982-05-25 International Business Machines Corporation Etching process with vibrationally excited SF6
US4617086A (en) * 1982-03-19 1986-10-14 International Business Machines Corporation Rapid etching method for silicon by SF6 gas
US4566935A (en) * 1984-07-31 1986-01-28 Texas Instruments Incorporated Spatial light modulator and method
US4639572A (en) * 1985-11-25 1987-01-27 Ibm Corporation Laser cutting of composite materials
US4731158A (en) * 1986-09-12 1988-03-15 International Business Machines Corporation High rate laser etching technique
JPH0715087B2 (ja) * 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
US5322988A (en) * 1990-03-29 1994-06-21 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
US5266532A (en) * 1990-03-29 1993-11-30 The United States Of America As Represented By The Secretary Of The Navy Method for laser-assisted silicon etching using halocarbon ambients
US5762744A (en) * 1991-12-27 1998-06-09 Rohm Co., Ltd. Method of producing a semiconductor device using an expand tape
JPH05291398A (ja) * 1992-04-08 1993-11-05 Sony Corp 素子基板及び液晶表示装置の製造方法
JPH07135441A (ja) * 1994-06-02 1995-05-23 Sanyo Electric Co Ltd 弾性表面波素子の製造方法
JP3028741B2 (ja) 1994-12-20 2000-04-04 日立電線株式会社 基板材料の切断方法及びその装置
US5597767A (en) * 1995-01-06 1997-01-28 Texas Instruments Incorporated Separation of wafer into die with wafer-level processing
JP3438369B2 (ja) * 1995-01-17 2003-08-18 ソニー株式会社 部材の製造方法
KR970008386A (ko) * 1995-07-07 1997-02-24 하라 세이지 기판의 할단(割斷)방법 및 그 할단장치
IL115931A0 (en) * 1995-11-09 1996-01-31 Oramir Semiconductor Ltd Laser stripping improvement by modified gas composition
AUPN736195A0 (en) 1995-12-29 1996-01-25 Pacific Solar Pty Limited Improved laser grooving method
JPH1140523A (ja) 1997-07-22 1999-02-12 Mitsubishi Electric Corp 基板切断装置および基板切断方法
KR100283415B1 (ko) * 1998-07-29 2001-06-01 구자홍 레이저를이용한투명매질의가공방법및장치
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6792326B1 (en) * 1999-05-24 2004-09-14 Potomac Photonics, Inc. Material delivery system for miniature structure fabrication
WO2000072224A1 (en) 1999-05-24 2000-11-30 Potomac Photonics, Inc. Material delivery system for miniature structure fabrication
US6472295B1 (en) * 1999-08-27 2002-10-29 Jmar Research, Inc. Method and apparatus for laser ablation of a target material
JP4409014B2 (ja) 1999-11-30 2010-02-03 リンテック株式会社 半導体装置の製造方法
US6319754B1 (en) * 2000-07-10 2001-11-20 Advanced Semiconductor Engineering, Inc. Wafer-dicing process
US6376797B1 (en) * 2000-07-26 2002-04-23 Ase Americas, Inc. Laser cutting of semiconductor materials
JP2002050670A (ja) * 2000-08-04 2002-02-15 Toshiba Corp ピックアップ装置及びピックアップ方法
US6676878B2 (en) * 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US6586707B2 (en) * 2000-10-26 2003-07-01 Xsil Technology Limited Control of laser machining
JP2002184720A (ja) * 2000-12-15 2002-06-28 Murata Mfg Co Ltd デバイスの製造方法
JP4678805B2 (ja) * 2001-02-14 2011-04-27 シャープ株式会社 半導体発光装置およびその製造方法
US6770544B2 (en) * 2001-02-21 2004-08-03 Nec Machinery Corporation Substrate cutting method
JP3544362B2 (ja) * 2001-03-21 2004-07-21 リンテック株式会社 半導体チップの製造方法
JP4886937B2 (ja) * 2001-05-17 2012-02-29 リンテック株式会社 ダイシングシート及びダイシング方法
TWI241674B (en) * 2001-11-30 2005-10-11 Disco Corp Manufacturing method of semiconductor chip
JP3612317B2 (ja) * 2001-11-30 2005-01-19 株式会社東芝 半導体装置の製造方法
JP2003173988A (ja) 2001-12-04 2003-06-20 Furukawa Electric Co Ltd:The 半導体ウェハのダイシング方法
KR101037142B1 (ko) * 2002-04-19 2011-05-26 일렉트로 사이언티픽 인더스트리즈, 아이엔씨 펄스 레이저를 이용한 기판의 프로그램 제어 다이싱
GB2399311B (en) * 2003-03-04 2005-06-15 Xsil Technology Ltd Laser machining using an active assist gas
JP2004273895A (ja) * 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
JP4231349B2 (ja) * 2003-07-02 2009-02-25 株式会社ディスコ レーザー加工方法およびレーザー加工装置

Also Published As

Publication number Publication date
TW200504948A (en) 2005-02-01
KR20060023196A (ko) 2006-03-13
GB0315623D0 (en) 2003-08-13
JP4625804B2 (ja) 2011-02-02
KR101167894B1 (ko) 2012-07-30
TWI245376B (en) 2005-12-11
EP1642332B1 (de) 2008-01-16
US7989320B2 (en) 2011-08-02
WO2005004226B1 (en) 2005-03-03
US20070224733A1 (en) 2007-09-27
GB2404280A (en) 2005-01-26
DE602004011343D1 (de) 2008-03-06
CN1816908B (zh) 2010-06-16
EP1642332A1 (de) 2006-04-05
DE602004011343T2 (de) 2008-12-24
MY141475A (en) 2010-04-30
CN1816908A (zh) 2006-08-09
WO2005004226A1 (en) 2005-01-13
JP2009514185A (ja) 2009-04-02
GB2404280B (en) 2006-09-27

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