NL8020365A - - Google Patents
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- Publication number
- NL8020365A NL8020365A NL8020365A NL8020365A NL8020365A NL 8020365 A NL8020365 A NL 8020365A NL 8020365 A NL8020365 A NL 8020365A NL 8020365 A NL8020365 A NL 8020365A NL 8020365 A NL8020365 A NL 8020365A
- Authority
- NL
- Netherlands
- Prior art keywords
- voltage
- line
- digit
- circuit
- digit line
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 8
- 230000001133 acceleration Effects 0.000 claims description 5
- 230000003213 activating effect Effects 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 102100033213 Teneurin-1 Human genes 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 108010063973 teneurin-1 Proteins 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11929280 | 1980-02-06 | ||
| US06/119,292 US4291392A (en) | 1980-02-06 | 1980-02-06 | Timing of active pullup for dynamic semiconductor memory |
| US8000506 | 1980-05-05 | ||
| PCT/US1980/000506 WO1981002358A1 (en) | 1980-02-06 | 1980-05-05 | Timing of active pullup for dynamic semiconductor memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8020365A true NL8020365A (xx) | 1981-12-01 |
Family
ID=22383603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8020365A NL8020365A (xx) | 1980-02-06 | 1980-05-05 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4291392A (xx) |
| JP (1) | JPH0146951B2 (xx) |
| CA (1) | CA1143838A (xx) |
| DE (1) | DE3050253C2 (xx) |
| FR (1) | FR2475269B1 (xx) |
| GB (1) | GB2079557B (xx) |
| NL (1) | NL8020365A (xx) |
| WO (1) | WO1981002358A1 (xx) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730192A (en) * | 1980-07-29 | 1982-02-18 | Fujitsu Ltd | Sense amplifying circuit |
| US4451907A (en) * | 1981-10-26 | 1984-05-29 | Motorola, Inc. | Pull-up circuit for a memory |
| US4534017A (en) * | 1981-10-29 | 1985-08-06 | International Business Machines Corporation | FET Memory with drift reversal |
| US4542483A (en) * | 1983-12-02 | 1985-09-17 | At&T Bell Laboratories | Dual stage sense amplifier for dynamic random access memory |
| JPS62134894A (ja) * | 1985-12-06 | 1987-06-17 | Mitsubishi Electric Corp | 半導体記憶装置 |
| USRE34463E (en) * | 1985-12-06 | 1993-11-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device with active pull up |
| US4905265A (en) * | 1985-12-11 | 1990-02-27 | General Imaging Corporation | X-ray imaging system and solid state detector therefor |
| JPS62165787A (ja) * | 1986-01-17 | 1987-07-22 | Toshiba Corp | 半導体記憶装置 |
| US4901280A (en) * | 1986-07-11 | 1990-02-13 | Texas Instruments Incorporated | Pull-up circuit for high impedance word lines |
| JP2828630B2 (ja) * | 1987-08-06 | 1998-11-25 | 三菱電機株式会社 | 半導体装置 |
| US5113372A (en) * | 1990-06-06 | 1992-05-12 | Micron Technology, Inc. | Actively controlled transient reducing current supply and regulation circuits for random access memory integrated circuits |
| US5596200A (en) * | 1992-10-14 | 1997-01-21 | Primex | Low dose mammography system |
| US6034913A (en) * | 1997-09-19 | 2000-03-07 | Siemens Microelectronics, Inc. | Apparatus and method for high-speed wordline driving with low area overhead |
| KR100482766B1 (ko) * | 2002-07-16 | 2005-04-14 | 주식회사 하이닉스반도체 | 메모리 소자의 컬럼 선택 제어 신호 발생 회로 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3765002A (en) * | 1971-04-20 | 1973-10-09 | Siemens Ag | Accelerated bit-line discharge of a mosfet memory |
| US3806898A (en) * | 1973-06-29 | 1974-04-23 | Ibm | Regeneration of dynamic monolithic memories |
| US3969706A (en) * | 1974-10-08 | 1976-07-13 | Mostek Corporation | Dynamic random access memory misfet integrated circuit |
| US3965460A (en) * | 1975-01-02 | 1976-06-22 | Motorola, Inc. | MOS speed-up circuit |
| DE2634089C3 (de) * | 1975-08-11 | 1988-09-08 | Nippon Telegraph And Telephone Corp., Tokio/Tokyo | Schaltungsanordnung zum Erfassen schwacher Signale |
| US4168490A (en) * | 1978-06-26 | 1979-09-18 | Fairchild Camera And Instrument Corporation | Addressable word line pull-down circuit |
-
1980
- 1980-02-06 US US06/119,292 patent/US4291392A/en not_active Expired - Lifetime
- 1980-05-05 GB GB8127979A patent/GB2079557B/en not_active Expired
- 1980-05-05 JP JP55502293A patent/JPH0146951B2/ja not_active Expired
- 1980-05-05 DE DE19803050253 patent/DE3050253C2/de not_active Expired
- 1980-05-05 NL NL8020365A patent/NL8020365A/nl unknown
- 1980-05-05 WO PCT/US1980/000506 patent/WO1981002358A1/en active Application Filing
-
1981
- 1981-02-05 CA CA000370160A patent/CA1143838A/en not_active Expired
- 1981-02-05 FR FR818102243A patent/FR2475269B1/fr not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB2079557B (en) | 1983-06-15 |
| DE3050253T1 (xx) | 1982-04-15 |
| FR2475269A1 (fr) | 1981-08-07 |
| JPH0146951B2 (xx) | 1989-10-11 |
| WO1981002358A1 (en) | 1981-08-20 |
| US4291392A (en) | 1981-09-22 |
| GB2079557A (en) | 1982-01-20 |
| JPS57500177A (xx) | 1982-01-28 |
| DE3050253C2 (de) | 1987-02-12 |
| FR2475269B1 (fr) | 1990-02-09 |
| CA1143838A (en) | 1983-03-29 |
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