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MY7300365A - Ohmic contacts for semiconductor devices - Google Patents

Ohmic contacts for semiconductor devices

Info

Publication number
MY7300365A
MY7300365A MY365/73A MY7300365A MY7300365A MY 7300365 A MY7300365 A MY 7300365A MY 365/73 A MY365/73 A MY 365/73A MY 7300365 A MY7300365 A MY 7300365A MY 7300365 A MY7300365 A MY 7300365A
Authority
MY
Malaysia
Prior art keywords
semiconductor devices
ohmic contacts
ohmic
contacts
semiconductor
Prior art date
Application number
MY365/73A
Other languages
English (en)
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of MY7300365A publication Critical patent/MY7300365A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
MY365/73A 1966-06-30 1973-12-30 Ohmic contacts for semiconductor devices MY7300365A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56184566A 1966-06-30 1966-06-30

Publications (1)

Publication Number Publication Date
MY7300365A true MY7300365A (en) 1973-12-31

Family

ID=24243716

Family Applications (1)

Application Number Title Priority Date Filing Date
MY365/73A MY7300365A (en) 1966-06-30 1973-12-30 Ohmic contacts for semiconductor devices

Country Status (4)

Country Link
US (1) US3616401A (xx)
DE (1) DE1690276C2 (xx)
GB (1) GB1193868A (xx)
MY (1) MY7300365A (xx)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770606A (en) * 1968-08-27 1973-11-06 Bell Telephone Labor Inc Schottky barrier diodes as impedance elements and method of making same
FR2077718A1 (xx) * 1970-02-09 1971-11-05 Comp Generale Electricite
US3856648A (en) * 1973-12-19 1974-12-24 Texas Instruments Inc Method of forming contact and interconnect geometries for semiconductor devices and integrated circuits
US3977955A (en) * 1974-05-10 1976-08-31 Bell Telephone Laboratories, Incorporated Method for cathodic sputtering including suppressing temperature rise
US3986944A (en) * 1975-06-27 1976-10-19 Honeywell Information Systems, Inc. Method for obtaining adhesion of multilayer thin films
GB8624637D0 (en) * 1986-10-14 1986-11-19 Emi Plc Thorn Electrical device
EP0267730B1 (en) * 1986-11-10 1992-03-18 AT&T Corp. Tungsten metallization
DE3638342A1 (de) * 1986-11-10 1988-05-19 Siemens Ag Elektrisches bauelement aus keramik mit mehrlagenmetallisierung und verfahren zu seiner herstellung
US5320984A (en) * 1990-12-21 1994-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere
US5200733A (en) * 1991-10-01 1993-04-06 Harris Semiconductor Corporation Resistor structure and method of fabrication
US5658438A (en) * 1995-12-19 1997-08-19 Micron Technology, Inc. Sputter deposition method for improved bottom and side wall coverage of high aspect ratio features
US5985103A (en) * 1995-12-19 1999-11-16 Micron Technology, Inc. Method for improved bottom and side wall coverage of high aspect ratio features
GB2349392B (en) * 1999-04-20 2003-10-22 Trikon Holdings Ltd A method of depositing a layer
US7250330B2 (en) * 2002-10-29 2007-07-31 International Business Machines Corporation Method of making an electronic package
DE102006026672A1 (de) 2006-06-02 2007-12-06 Würth Solar Gmbh & Co. Kg Sputterabscheidung von Molybdänschichten
US7875945B2 (en) * 2007-06-12 2011-01-25 Guardian Industries Corp. Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
DE102015117448A1 (de) * 2015-09-02 2017-03-02 Von Ardenne Gmbh Verfahren und Prozessieranordnung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA576861A (en) * 1952-04-04 1959-06-02 S. Preston John Production of transparent electrical conductive films
DE1000533B (de) * 1954-10-22 1957-01-10 Siemens Ag Verfahren zur Kontaktierung eines Halbleiterkoerpers
DE1143374B (de) * 1955-08-08 1963-02-07 Siemens Ag Verfahren zur Abtragung der Oberflaeche eines Halbleiterkristalls und anschliessenden Kontaktierung
GB830391A (en) * 1955-10-28 1960-03-16 Edwards High Vacuum Ltd Improvements in or relating to cathodic sputtering of metal and dielectric films
GB830392A (en) * 1956-05-17 1960-03-16 Edwards High Vacuum Ltd Improvements in or relating to cathodic sputtering

Also Published As

Publication number Publication date
DE1690276B1 (de) 1972-05-04
US3616401A (en) 1971-10-26
GB1193868A (en) 1970-06-03
DE1690276C2 (de) 1974-04-04

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