MY7300365A - Ohmic contacts for semiconductor devices - Google Patents
Ohmic contacts for semiconductor devicesInfo
- Publication number
- MY7300365A MY7300365A MY365/73A MY7300365A MY7300365A MY 7300365 A MY7300365 A MY 7300365A MY 365/73 A MY365/73 A MY 365/73A MY 7300365 A MY7300365 A MY 7300365A MY 7300365 A MY7300365 A MY 7300365A
- Authority
- MY
- Malaysia
- Prior art keywords
- semiconductor devices
- ohmic contacts
- ohmic
- contacts
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US56184566A | 1966-06-30 | 1966-06-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
MY7300365A true MY7300365A (en) | 1973-12-31 |
Family
ID=24243716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MY365/73A MY7300365A (en) | 1966-06-30 | 1973-12-30 | Ohmic contacts for semiconductor devices |
Country Status (4)
Country | Link |
---|---|
US (1) | US3616401A (xx) |
DE (1) | DE1690276C2 (xx) |
GB (1) | GB1193868A (xx) |
MY (1) | MY7300365A (xx) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3770606A (en) * | 1968-08-27 | 1973-11-06 | Bell Telephone Labor Inc | Schottky barrier diodes as impedance elements and method of making same |
FR2077718A1 (xx) * | 1970-02-09 | 1971-11-05 | Comp Generale Electricite | |
US3856648A (en) * | 1973-12-19 | 1974-12-24 | Texas Instruments Inc | Method of forming contact and interconnect geometries for semiconductor devices and integrated circuits |
US3977955A (en) * | 1974-05-10 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Method for cathodic sputtering including suppressing temperature rise |
US3986944A (en) * | 1975-06-27 | 1976-10-19 | Honeywell Information Systems, Inc. | Method for obtaining adhesion of multilayer thin films |
GB8624637D0 (en) * | 1986-10-14 | 1986-11-19 | Emi Plc Thorn | Electrical device |
EP0267730B1 (en) * | 1986-11-10 | 1992-03-18 | AT&T Corp. | Tungsten metallization |
DE3638342A1 (de) * | 1986-11-10 | 1988-05-19 | Siemens Ag | Elektrisches bauelement aus keramik mit mehrlagenmetallisierung und verfahren zu seiner herstellung |
US5320984A (en) * | 1990-12-21 | 1994-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere |
US5200733A (en) * | 1991-10-01 | 1993-04-06 | Harris Semiconductor Corporation | Resistor structure and method of fabrication |
US5658438A (en) * | 1995-12-19 | 1997-08-19 | Micron Technology, Inc. | Sputter deposition method for improved bottom and side wall coverage of high aspect ratio features |
US5985103A (en) * | 1995-12-19 | 1999-11-16 | Micron Technology, Inc. | Method for improved bottom and side wall coverage of high aspect ratio features |
GB2349392B (en) * | 1999-04-20 | 2003-10-22 | Trikon Holdings Ltd | A method of depositing a layer |
US7250330B2 (en) * | 2002-10-29 | 2007-07-31 | International Business Machines Corporation | Method of making an electronic package |
DE102006026672A1 (de) | 2006-06-02 | 2007-12-06 | Würth Solar Gmbh & Co. Kg | Sputterabscheidung von Molybdänschichten |
US7875945B2 (en) * | 2007-06-12 | 2011-01-25 | Guardian Industries Corp. | Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same |
DE102015117448A1 (de) * | 2015-09-02 | 2017-03-02 | Von Ardenne Gmbh | Verfahren und Prozessieranordnung |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA576861A (en) * | 1952-04-04 | 1959-06-02 | S. Preston John | Production of transparent electrical conductive films |
DE1000533B (de) * | 1954-10-22 | 1957-01-10 | Siemens Ag | Verfahren zur Kontaktierung eines Halbleiterkoerpers |
DE1143374B (de) * | 1955-08-08 | 1963-02-07 | Siemens Ag | Verfahren zur Abtragung der Oberflaeche eines Halbleiterkristalls und anschliessenden Kontaktierung |
GB830391A (en) * | 1955-10-28 | 1960-03-16 | Edwards High Vacuum Ltd | Improvements in or relating to cathodic sputtering of metal and dielectric films |
GB830392A (en) * | 1956-05-17 | 1960-03-16 | Edwards High Vacuum Ltd | Improvements in or relating to cathodic sputtering |
-
1966
- 1966-06-30 US US561845A patent/US3616401A/en not_active Expired - Lifetime
-
1967
- 1967-06-28 GB GB29878/67A patent/GB1193868A/en not_active Expired
- 1967-06-29 DE DE1690276A patent/DE1690276C2/de not_active Expired
-
1973
- 1973-12-30 MY MY365/73A patent/MY7300365A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE1690276B1 (de) | 1972-05-04 |
US3616401A (en) | 1971-10-26 |
GB1193868A (en) | 1970-06-03 |
DE1690276C2 (de) | 1974-04-04 |
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