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MD2510G2 - Nanostructure and process for manufacture thereof - Google Patents

Nanostructure and process for manufacture thereof

Info

Publication number
MD2510G2
MD2510G2 MDA20030052A MD20030052A MD2510G2 MD 2510 G2 MD2510 G2 MD 2510G2 MD A20030052 A MDA20030052 A MD A20030052A MD 20030052 A MD20030052 A MD 20030052A MD 2510 G2 MD2510 G2 MD 2510G2
Authority
MD
Moldova
Prior art keywords
dielectric isolation
softening
melting
nanostructure
nanothread
Prior art date
Application number
MDA20030052A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD2510F1 (en
Inventor
Анатолий ЙОЙШЕР
Original Assignee
ИОЙШЕР Анатол
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ИОЙШЕР Анатол filed Critical ИОЙШЕР Анатол
Priority to MDA20030052A priority Critical patent/MD2510G2/en
Publication of MD2510F1 publication Critical patent/MD2510F1/en
Publication of MD2510G2 publication Critical patent/MD2510G2/en

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  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

The invention relates to the electronics, in particular to the technology of materials for electronics and instrument engineering, namely to the ordered compound nanostructures.The nanostructure includes current-conducting nanothreads in common dielectric isolation. Novelty consists in that the nanostructure is made filiform and contains nanothreads, closely packed in microbean, the nanothreads being made of metallic, magnetic, semimetallic, semiconducting and/or superconducting material in industrial dielectric isolation, at the same time the dimension of the cross-section of each nanothread is of 1…500 nm, and the thickness of its isolation is of 1…2000 nm.The current-conducting threads may be made of several groups of diverse materials.The nanothread space in dielectric isolation may be filled up with metallic, semimetallic, semiconducting, superconducting or dielectric material, the melting and softening temperature of which is lower than the nanothread maximum melting temperature.The process of nanostructure manufacture includes the formation of a blank, containing a theread-forming care, place into a glass tube, heating of the blank up to the melting of the thread-forming care and softening of the glass tube, extending of the microthread and subsequent cooling thereof. Novelty of the process consists in that the process consists in that the thread-forming core is made in the form of a closely packed beam of current-conducting microthreads in individual dielectric isolation, the common diameter of which is of 1…25 nm and is equal to the internal diameter of the glass tube, and the heating is carried out up to the melting and softening of each of the microthreads and softening of the dielectric isolation thereof.
MDA20030052A 2003-02-18 2003-02-18 Nanostructure and process for manufacture thereof MD2510G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20030052A MD2510G2 (en) 2003-02-18 2003-02-18 Nanostructure and process for manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20030052A MD2510G2 (en) 2003-02-18 2003-02-18 Nanostructure and process for manufacture thereof

Publications (2)

Publication Number Publication Date
MD2510F1 MD2510F1 (en) 2004-07-31
MD2510G2 true MD2510G2 (en) 2005-06-30

Family

ID=32768667

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20030052A MD2510G2 (en) 2003-02-18 2003-02-18 Nanostructure and process for manufacture thereof

Country Status (1)

Country Link
MD (1) MD2510G2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4046C2 (en) * 2009-12-23 2010-12-31 Акционерное Общество Научно-Исследовательский Институт "Eliri" Method of manufacturing the filamentary nanostructure
MD261Z (en) * 2010-01-19 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Process for the obtaining of nanowires
MD280Z (en) * 2009-12-22 2011-04-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for manufacture of Te microwire in glass insulation

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD3920C2 (en) * 2006-12-04 2009-12-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for increasing the efficiency of the thermoelectric cell
MD3691C2 (en) * 2007-05-10 2009-03-31 Акционерное Общество Научно-Исследовательский Институт "Eliri" Process for manufacturing a filiform nanostructure
MD4013G2 (en) * 2007-10-31 2010-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for obtaining an alloy with increased magnetic resistance for the manufacture of microwires
MD4052C1 (en) * 2008-10-16 2011-01-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for measuring the electrical conduction and thermoelectromotive force of semiconductor materials in the temperature range 300…1200K
MD323Z (en) * 2009-12-29 2011-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Thermoelectric microwire in glass insulation
WO2013048022A2 (en) * 2011-09-26 2013-04-04 포항공과대학교 산학협력단 Α-type zinc- phthalocyanine nanowires having enhanced water solubility and water dispersibility, composite of an α-type zinc- phthalocyanine nanowire/phenothiazine, and method for preparing same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU765888A1 (en) * 1978-01-03 1980-09-23 Кишиневский Научно-Исследовательский Институт Электроприборостроения Научно-Производственного Объединения "Микропровод" Method of manufacturing cast microwire
MD1546F2 (en) * 1997-05-12 2000-09-30 Lab Internat De Supraconductib Process for obtaining of a metallic microwire into the glass insulation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU765888A1 (en) * 1978-01-03 1980-09-23 Кишиневский Научно-Исследовательский Институт Электроприборостроения Научно-Производственного Объединения "Микропровод" Method of manufacturing cast microwire
MD1546F2 (en) * 1997-05-12 2000-09-30 Lab Internat De Supraconductib Process for obtaining of a metallic microwire into the glass insulation
MD1546G2 (en) * 1997-05-12 2001-06-30 Лабораторул Интернационал Де Супракондуктибилитате Ши Електроника Корпулуй Солид Process for obtaining a metallic microwire into the glass insulation

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Joseph P.Heremans, Christopher M.Thrush, Donald T.Morelli, Ming-Cheng Wu. Thermoelectric Power of Bismuth *
Joseph P.Heremans, Christopher M.Thrush, Donald T.Morelli, Ming-Cheng Wu. Thermoelectric Power of Bismuth Nanocomposites. Phys.Rev.Let., V. 88, № 21, 2002, p. 216801-1 – 216801-4 *
Y.-M. Lin, X.Sun, M.S. Dresselhaus. Phys.Rev. B, v. 62, № 7, 2000, p. 4610-4623 *
Y.-M.Lin, X.Sun, M.S. Dresselhaus, Phys.Rev. B, v. 62, № 7, 2000, p. 4610-4623. *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD280Z (en) * 2009-12-22 2011-04-30 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for manufacture of Te microwire in glass insulation
MD4046C2 (en) * 2009-12-23 2010-12-31 Акционерное Общество Научно-Исследовательский Институт "Eliri" Method of manufacturing the filamentary nanostructure
MD261Z (en) * 2010-01-19 2011-03-31 Институт Прикладной Физики Академии Наук Молдовы Process for the obtaining of nanowires

Also Published As

Publication number Publication date
MD2510F1 (en) 2004-07-31

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Legal Events

Date Code Title Description
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees