Chen et al., 2023 - Google Patents
Direct laser patterning of organic semiconductors for high performance OFET-based gas sensorsChen et al., 2023
- Document ID
- 3972159125991113195
- Author
- Chen L
- Hu Y
- Huang H
- Liu C
- Wu D
- Xia J
- Publication year
- Publication venue
- Journal of Materials Chemistry C
External Links
Snippet
Effective patterning of organic semiconductor (OSC) films is an essential prerequisite for large-scale fabrication of organic functional electronics. Although photolithography is a reliable patterning method and is a mature technique, the preparation of microstructured …
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Jeong et al. | Solvent-assisted gel printing for micropatterning thin organic–inorganic hybrid perovskite films | |
Liu et al. | Nanopatterning technologies of 2D materials for integrated electronic and optoelectronic devices | |
Zhao et al. | Integrated graphene systems by laser irradiation for advanced devices | |
Wu et al. | Graphene‐assisted growth of patterned perovskite films for sensitive light detector and optical image sensor application | |
JP6206729B2 (en) | Thin film transfer method | |
KR101481000B1 (en) | Graphene quantum dot phtodetector and the Fabricating Method thereof | |
Bae et al. | Tailored single crystals of triisopropylsilylethynyl pentacene by selective contact evaporation printing | |
US20070215960A1 (en) | Methods for Fabrication of Positional and Compositionally Controlled Nanostructures on Substrate | |
Ding et al. | Flexible small-channel thin-film transistors by electrohydrodynamic lithography | |
CN1935632A (en) | Method of manufacturing a nanowire device | |
Chen et al. | Microfluidic solution-processed organic and perovskite nanowires fabricated for field-effect transistors and photodetectors | |
US20170125681A1 (en) | Organic single crystal field effect circuit and preparing method thereof | |
CN102473598A (en) | Method for disposing a microstructure | |
Chen et al. | Direct laser patterning of organic semiconductors for high performance OFET-based gas sensors | |
CN105576123A (en) | Full-graphene group flexible organic field-effect transistor and manufacturing method thereof | |
US10581003B2 (en) | Method for lithograghic patterning of sensitive materials | |
Zhang et al. | Multilayer Si shadow mask processing of wafer-scale MoS2 devices | |
Jin et al. | Ice-assisted electron-beam lithography for halide perovskite optoelectronic nanodevices | |
KR20140044763A (en) | Graphene field effect transistor with dielectrics and gate electrodes having stable behaviors despite high strains, and manufacturing method of the same | |
KR20190140329A (en) | Perovskite device and method of forming thereof | |
US9691849B2 (en) | Ultra-long silicon nanostructures, and methods of forming and transferring the same | |
CN111584682B (en) | Flexible optical detection device based on graphene and manufacturing method thereof | |
US12005445B2 (en) | Micro-pump fluidic strategy for fabricating perovskite microwire array-based devices on semiconductor platforms and method | |
CN115161760A (en) | Double perovskite transverse heterojunction prepared by two-step nanoimprint method, preparation method and application thereof | |
Herzer et al. | Fabrication of PEDOT–OTS-patterned ITO substrates |