Chen et al., 2015 - Google Patents
Dark counts of superconducting nanowire single-photon detector under illuminationChen et al., 2015
View HTML- Document ID
- 3930921956303358812
- Author
- Chen S
- You L
- Zhang W
- Yang X
- Li H
- Zhang L
- Wang Z
- Xie X
- Publication year
- Publication venue
- Optics express
External Links
Snippet
An abnormal increase in the SDE was observed for superconducting nanowire single- photon detectors (SNSPDs) when the bias current (I_b) was close to the switching current (I_sw). By introducing the time-correlated single-photon counting technique, we investigated …
- 238000005286 illumination 0 title abstract description 47
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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