Lee et al., 2013 - Google Patents
Effective color conversion of GaN-based LEDs via coated phosphor layersLee et al., 2013
- Document ID
- 3803432768166040227
- Author
- Lee H
- Lin Y
- Chen I
- Chao C
- Publication year
- Publication venue
- IEEE Photonics Technology Letters
External Links
Snippet
Gallium nitride (GaN)-based light-emitting diodes (LEDs) equipped with distributed Bragg reflectors (DBR) and covered with either red or green phosphor layers are fabricated to form quasi-monochromatic red or green light sources. Titanium oxide and silicon oxide layers are …
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus 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 [P] 0 title abstract description 32
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0079—Processes for devices with an active region comprising only III-V compounds wafer bonding or at least partial removal of the growth substrate
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- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H01L33/50—Wavelength conversion elements
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- H01L33/58—Optical field-shaping elements
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- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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