Nothing Special   »   [go: up one dir, main page]

Marro et al., 2017 - Google Patents

The impact of organic additives on copper trench microstructure

Marro et al., 2017

View PDF
Document ID
3678512461189925781
Author
Marro J
Okoro C
Obeng Y
Richardson K
Publication year
Publication venue
Journal of the Electrochemical Society

External Links

Snippet

Organic additives are typically used in the pulse electrodeposition of copper (Cu) to prevent void formation during the filling of high aspect ratio features. In this work, the role of bath chemistry as modified by organic additives was investigated for its effects on Cu trench …
Continue reading at iopscience.iop.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Similar Documents

Publication Publication Date Title
Marro et al. The impact of organic additives on copper trench microstructure
Wang et al. Bottom-up fill for submicrometer copper via holes of ULSIs by electroless plating
Lingk et al. Texture development of blanket electroplated copper films
Lingk et al. X-ray diffraction pole figure evidence for (111) sidewall texture of electroplated Cu in submicron damascene trenches
Chang et al. The effect of plating current densities on self-annealing behaviors of electroplated copper films
Zheng et al. Study of grain size effect of Cu metallization on interfacial microstructures of solder joints
Talin et al. Thermal stability of Ni–Mn electrodeposits
Huang Effects of impurity elements on isothermal grain growth of electroplated copper
Yang et al. Self-annealing behavior of electroplated Cu with different brightener concentrations
Chang et al. Integrated electrochemical deposition of copper metallization for ultralarge-scale integrated circuits
Lin et al. The ultrahigh-rate growth of nanotwinned copper induced by thiol organic additives
Lee et al. Development of nanotwins in electroplated copper and its effect on shear strength of tin/copper joint
Rasmussen et al. Microstructure in electrodeposited copper layers; the role of the substrate
Alshwawreh et al. Resistivity-microstructure correlation of self-annealed electrodeposited copper thin films
Lühn et al. Changing superfilling mode for copper electrodeposition in blind holes from differential inhibition to differential acceleration
Kelly et al. Electrolyte additive chemistry and feature size-dependent impurity incorporation for Cu interconnects
Huang et al. Effect of sodium thiazolinyl dithiopropane sulphonate (SH110) addition on electroplating nanotwinned copper films and their filling performance of fine-pitch redistributed layer (RDL)
Sung et al. Effects of organic additives on grain growth in electrodeposited Cu thin film during self-annealing
Hasegawa et al. Enhancement of the ductility of electrodeposited copper films by room-temperature recrystallization
Inoue et al. Perfect conformal deposition of electroless Cu for high aspect ratio through-Si vias
Guo et al. Electrodeposition of copper on oxidized ruthenium
Lühn et al. Monitoring the superfilling of blind holes with electrodeposited copper
Zhu et al. Communication—Electrodeposition of nano-twinned Cu in void-free filling for blind microvia of high density interconnect
Lee et al. High-speed Cu electrodeposition and reliability of Cu pillar bumps in high-temperature storage
Kang et al. Atomic force microscopy examination of Cu electrodeposition in trenches