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Das et al., 1984 - Google Patents

Formation of buried oxide layers by high dose implantation of oxygen ions in silicon

Das et al., 1984

Document ID
3578078202240219896
Author
Das K
Butcher J
Anand K
Publication year
Publication venue
Journal of electronic materials

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Snippet

Buried implanted oxide layers have been formed by high dose implantation of oxygen ions of the order of 1× l0 18− 2 in silicon. The effects of dose at a given energy, and energy for a given peak concentration, on the distribution profile of oxygen have been studied. An …
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
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    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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