Nothing Special   »   [go: up one dir, main page]

Bashara et al., 1964 - Google Patents

Electrical conduction in very thin polybutadiene films formed in a glow discharge

Bashara et al., 1964

Document ID
3518204594432983866
Author
Bashara N
Doty C
Publication year
Publication venue
Journal of Applied Physics

External Links

Snippet

Films in the thickness range 100 to 500 Å are studied. Ohmic contacts (gold electrodes) are formed only sporadically. In the best example of Ohmic contact, space‐charge‐limited current (SCLC) occurs at a field of 3× 104 V/cm. SCLC is obtained in this and other …
Continue reading at pubs.aip.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L49/00—Solid state devices not provided for in groups H01L27/00 - H01L47/00 and H01L51/00 and not provided for in any other subclass; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material
    • G01N27/04—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means by investigating the impedance of the material by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L47/00—Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00—Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof

Similar Documents

Publication Publication Date Title
Bashara et al. Electrical conduction in very thin polybutadiene films formed in a glow discharge
Osburn et al. Electrical conduction and dielectric breakdown in silicon dioxide films on silicon
Campbell et al. Transient and steady-state space-charge-limited currents in polyfluorene copolymer diode structures with ohmic hole injecting contacts
Oepts et al. Dielectric breakdown of ferromagnetic tunnel junctions
Mann Electrical properties of thin polymer films. Part I. Thickness 500–2500 Å
Christy Electrical properties of thin polymer films. Part II. Thickness 50–150 Å
US3447045A (en) Metal-insulator-metal tunneling device with exponential i-v characteristic only in the negative resistance range
Caserta et al. Space‐Charge‐Limited Current and Band Structure in Amorphous Organic Films
Mescher et al. Development of dry processing techniques for CdZnTe surface passivation
Inganäs et al. Electronic properties of metal/polypyrrole junctions
Tuğluoğlu 60Co γ-ray irradiation effects on the interface traps density of tin oxide films of different thicknesses on n-type Si (1 1 1) substrates
Gould et al. Current-voltage characteristics, dielectric breakdown and potential distribution measurements in Au-SiOx-Au thin film diodes and triodes
Altuntas et al. Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range
Gregor et al. Electrical conductivity of thin polymer films
Raby et al. Potential distribution and hot electron attenuation measurements in MIMIM thin film triodes
Lee et al. Conduction mechanisms in barium tantalates films and modification of interfacial barrier height
Bidadi et al. A study of the dc electrical properties of thin films of the co-evaporated dielectric system SiO/TiO
Hickmott Temperature dependence of voltage-controlled negative resistance and electroluminescence in Al–Al2O3–Au diodes
Hikita et al. Electrical breakdown of plasma-polymerized styrene thin films
Gustafsson et al. Rectifying metal/poly (3-hexylthiophene) contacts
Robertson et al. Electrical properties of rf sputtered PTFE
Khare et al. Electrical transport in ethyl cellulose-chloranil system
Hadri et al. Electrical conduction in a semicrystalline polyethylene terephthalate in high electric field
Werner et al. Dielectric relaxation and steady-state leakage in low-temperature sputtered (Ba, Sr) TiO 3 thin films
Bashara A Survey of Conducton Mechanisms in Very Thin Films