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Chumbes et al., 2001 - Google Patents

AlGaN/GaN high electron mobility transistors on Si (111) substrates

Chumbes et al., 2001

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Document ID
3442873724532105824
Author
Chumbes E
Schremer A
Smart J
Wang Y
MacDonald N
Hogue D
Komiak J
Lichwalla S
Leoni R
Shealy J
Publication year
Publication venue
IEEE Transactions on electron devices

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AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrates have for the first time been realized using organometallic vapor phase epitaxy (OMVPE). Using 1/spl Omega/- cm p-Si (111), these devices exhibited static output characteristics with low output …
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