Gerischer et al., 1988 - Google Patents
On the etching of silicon by oxidants in ammonium fluoride solutions: A mechanistic studyGerischer et al., 1988
- Document ID
- 3338632421023029187
- Author
- Gerischer H
- Lübke M
- Publication year
- Publication venue
- Journal of the Electrochemical Society
External Links
Snippet
ABSTRACT A comparison is made between the mechanism of anodic photo-oxidation and the etching by oxidants of n-type silicon in fluoride solution under conditions where no oxide layer is formed on the surface. Both oxidation processes need holes for their initiation. In the …
- 229910052710 silicon 0 title abstract description 27
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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