Nothing Special   »   [go: up one dir, main page]

Yazawa et al., 2013 - Google Patents

High-speed transient thermoreflectance imaging of microelectronic devices and circuits

Yazawa et al., 2013

Document ID
3259568024686865525
Author
Yazawa K
Kendig D
Hernandez D
Maize K
Alavi S
Shakouri A
Publication year
Publication venue
EDFA Technical Articles

External Links

Snippet

This article discusses the setup and use of thermoreflectance imaging, a thermal mapping technique with a spatial resolution in the submicron range and a time resolution down to tens of nanoseconds. It describes the basic physics of thermoreflectance measurements and …
Continue reading at dl.asminternational.org (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/32—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the structure or configuration of the cell or thermo-couple forming the device including details about, e.g., housing, insulation, geometry, module
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L35/00—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L35/28—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only
    • H01L35/30—Thermo-electric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermo-electric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof operating with Peltier or Seebeck effect only characterised by the heat-exchanging means at the junction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation; Temperature sensing arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means

Similar Documents

Publication Publication Date Title
Shin et al. Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs
Barako et al. Thermal cycling, mechanical degradation, and the effective figure of merit of a thermoelectric module
Barako et al. A reliability study with infrared imaging of thermoelectric modules under thermal cycling
CN102735707A (en) Test unit and measurement method thereof
Maize et al. Thermoreflectance CCD imaging of self-heating in power MOSFET arrays
Kendig et al. Thermal analysis of advanced microelectronic devices using thermoreflectance thermography
Yazawa et al. High-speed transient thermoreflectance imaging of microelectronic devices and circuits
Sattari et al. Transient thermal measurement on nano-metallic sintered die-attach joints using a thermal test chip
Kendig et al. Thermal imaging of encapsulated LEDs
Yazawa et al. Time-resolved thermoreflectance imaging for thermal testing and analysis
Yazawa et al. Ultrafast submicron thermoreflectance imaging
Yazawa et al. Challenges and opportunities for transient thermal imaging of microelectronic devices
Yazawa et al. Transient thermal characterization of HEMT devices
Sadeque et al. Transient Thermal Response of Hotspots in Graphene–Silver Nanowire Hybrid Transparent Conducting Electrodes
Shakouri et al. Ultrafast submicron thermal characterization of integrated circuits
Hernando et al. Thermal characterization of multichip power module
Moure et al. Influence of the design on the thermal response of press-fit diodes: An infrared thermographic study
Kendig et al. Thermal imaging based on Thermoreflectance addresses the challenges for thermal analysis of today's advanced complex devices
Annaniah et al. An investigation on die crack detection using Temperature Sensitive Parameter for high speed LED mass production
Górecki et al. An influence of the selected factors on the transient thermal impedance model of power MOSFET
Gleissner et al. Investigation of a Non-Linear Two-Phase Immersion Cooling of Power Semiconductors
Yazawa et al. Intrinsic transient thermal response of GaN HEMT
Gray et al. Ensuring Advanced Semiconductor Device Reliability using FA and Submicron Defect Detection
Kendig et al. Transient thermal measurement and behavior of integrated circuits
Dunn et al. Experimental three-dimensional thermal mapping of a GaN on RF-SOI chip